2SC1472

2SC1472(K) Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SC1472(K) Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO ICBO IEBO hFE1*1 hFE2*1 hFE3*1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob ton Min 30 — — 2000 3000 3000 — — 50 — — Typ — — — — — — — — — — 60 Max — 100 100 100000 — — 1.5 2.0 — 10 — V V MHz pF ns Unit V nA nA Test conditions IC = 1 mA, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V (Pulse Test) IC = 400 mA, VCE = 5 V (Pulse Test) IC = 100 mA, IB = 0.1 mA IC = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V IC = 100 IB1 = 100 mA IB2 = –IB1 Turn off time Storage time Note: hFE1 hFE2 hFE3 toff tstg — — 800 350 — — ns ns 1. The 2SC1472(K) is grouped by hFE as follows. A B 2000 to 100000 5000 to 100000 3000 min 10000 min 3000 min 10000 min Switching Time Test Circuit D.U.T. 6k 50 –6 V 6k 0.002 –+ 50 100 0.002 –+ 50 11 V Unit R : Ω C : µF 13 V Input 0 Output 0 CRT Response Waveform 90% 10% 90% 10% td ton tstg toff 90% 10% P.G. tr, tf ≤ 15 ns PW 10 µs duty ratio ≤ 10% Rev.2.00 Aug 10, 2005 page 2 of 5 2SC1472(K) Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 500 Typical Output Characteristics 35 30 25 Collector Current IC (mA) 20 8 16 14 1 400 12 10 400 300 8 6 200 4 100 2 µA 2.0 4.0 200 PC = 50 0 mW IB = 0 0 50 100 150 0 6.0 8.0 10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Collector Cutoff Current vs. Collector to Emitter Voltage Collector Cutoff Current ICEO (nA) 10,000 1,000 75 100 10 1.0 0.1 0.01 0 TC = 25°C 100 RBE = ∞ Typical Output Characteristics 200 0 5. 5 4. 0 4. Collector Current IC (mA) 160 Pulse 3.5 120 3.0 80 2.5 50 2.0 40 1.5 1.0 0.5 µA PC = 500 mW IB = 0 0 10 20 30 40 50 10 20 30 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE (sat) (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1 2 5 10 20 50 100 200 500 Pulse IC = 1,000 IB Ta = –5 –25 0 25 50 75 100 0°C DC Current Transfer Ratio hFE (×103) 80 70 60 =1 00 ° 5075 C VCE = 5 V Pulse 50 40 30 20 10 0 2.0 Ta 25 0 –25 –50 5.0 10 20 50 100 200 500 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SC1472(K) Collector to Emitter Saturation Voltage vs. Base Current Base to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) 2.4 2.0 1.6 1.2 0.8 0.4 0 1 3 10 30 100 300 1,000 20 50 100 200 IC = 500 mA Ta = 25°C Pulse 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1 2 5 10 20 50 100 200 500 IC = 1,000 IB Pulse Ta = –50° –25 0 25 50 75 100 C Base Current IB (mA) Collector Current IC (mA) Collector Output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF) Input and Output Capacitance vs. Voltage 10 Switching Time vs. Collector Current 30 IC = 100 IB1 = –100 IB2 VCC = 10.5 V 8 Switching Time t (µs) f = 1 MHz 10 3 1.0 toff 6 C (I = 0) ib C 4 Cob(IE = 0) tstg 0.3 0.1 0.03 0.3 td ton 2 0 0.1 0.3 1.0 3 10 30 1.0 3 10 30 100 300 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) Base Current IC (mA) Response Waveform Switching Time Test Circuit D.U.T. CRT 13 V Input 0 P.G. tr, tf ≤ 15 ns PW ³ 10 µs duty ratio ≤ 10% 50 –6 V 0.002 –+ 50 0.002 –+ 50 Unit R : Ω C : µF 10.5 V Output 0 td ton 10% 90% 10% tstg toff 90% 10% 90% Rev.2.00 Aug 10, 2005 page 4 of 5 2SC1472(K) Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003DA-A Package Name TO-92(1) / TO-92(1)V MASS[Typ.] 0.25g Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.55 Max 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC1472KATZ-E 2SC1472KBTZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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