2SC2547

2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial REJ03G0699-0300 (Previous ADE-208-1067A) Rev.3.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2545 60 60 5 100 –100 400 150 –55 to +150 2SC2546 90 90 5 100 –100 400 150 –55 to +150 2SC2547 120 120 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 5 2SC2545, 2SC2546, 2SC2547 Electrical Characteristics (Ta = 25°C) 2SC2545 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise voltage referred input Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 60 60 5 — — 250 — — — — — Typ — — — — — — — 0.6 90 3.0 0.5 Max — — — 0.1 0.1 90 90 5 — — 2SC2546 Min Typ — — — — — — — 0.6 90 3.0 0.5 Max — — — 0.1 0.1 120 120 5 — — 2SC2547 Min Typ — — — — — — — 0.6 90 3.0 0.5 Max — — — 0.1 0.1 800 0.2 — — — — V V MHz pF nV/ √Hz Unit V V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 m A VCE = 12 V, IC = 2 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6V, IC = 10 mA, f = 1 kHz, Rg = 0, ∆f = 1Hz µA µA hFE*1 VCE(sat) VBE fT Cob en 1200 600 0.2 — — — — — — — — — 1200 250 0.2 — — — — — — — — — Note: 1. The 2SC2545 and 2SC2547 are grouped by hFE as follows. D E F 2SC2545 — 400 to 800 600 to 1200 2SC2547 250 to 500 400 to 800 — Rev.3.00 Aug 10, 2005 page 2 of 5 2SC2545, 2SC2546, 2SC2547 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 50 Typical Output Characteristics 70 60 50 30 40 30 20 10 10 µA IB = 0 P C Collector Current IC (mA) 40 400 =0 .4 W 20 200 0 50 100 150 0 4 8 12 16 20 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Output Characteristics 20 25 10 Typical Transfer Characteristics VCE = 12 V Collector Current IC (mA) Collector Current IC (mA) 16 5 20 15 10 5 µA IB = 0 2 1.0 0.5 12 8 4 0.2 0.1 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 5,000 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1 2 5 10 20 50 100 IC = 10 IB 2,000 1,000 500 200 100 50 0.1 0.2 VCE = 12 V Pulse 0.5 1.0 2 5 10 20 50 100 Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio hFE Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 2SC2545, 2SC2546, 2SC2547 Base to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product fT (MHz) 10 5 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 100 IC = 10 IB 2,000 1,000 500 200 100 50 VCE = 12 V Base to Emitter Saturation Voltage VBE(sat) (V) Gain Bandwidth Product vs. Collector Current 20 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Current IC (mA) Contours of Constant Noise Figure Signal Source Resistance Rg (kΩ) 100 30 V = 6 V CE f = 1 kHz 10 3 1.0 0.3 0.1 0.03 NF = 0.5 dB 1 2 4 6 10 Collector Output Capacitance Cob (pF) 100 50 20 10 5 2 1 0.5 IE = 0 f = 1 MHz 1.0 2 5 10 20 50 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 100 Collector to Base Voltage VCB (V) Collector Current IC (mA) Contours of Constant Noise Figure Signal Source Resistance Rg (kΩ) VCE = 6 V f = 120 Hz Contours of Constant Noise Figure Signal Source Resistance Rg (kΩ) 100 30 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 100 NF = 0.5 dB 1 2 4 6 10 100 30 10 3 1.0 NF = 0.5 dB 0.3 0.1 0.03 1 2 4 6 10 VCE = 6 V f = 10 Hz 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 100 Collector Current IC (mA) Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 5 2SC2545, 2SC2546, 2SC2547 Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003DA-A Package Name TO-92(1) / TO-92(1)V MASS[Typ.] 0.25g Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.55 Max 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC2545ETZ-E 2SC2545FTZ-E 2SC2546FTZ-E 2SC2547ETZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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