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Cautions
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2SC2979
Silicon NPN Triple Diffused
ADE-208-890 (Z) 1st. Edition September 2000 Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
23
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg
1
Ratings 900 800 7 3 6 1.5 40 150 –55 to +150
Unit V V V A A A W °C °C
2SC2979
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 800 800 Typ — — Max — — Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 3 A, IB1 = 0.9 A, IB2 = –0.6 A, VBE = –5.0 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 750 V, IE = 0 VCE = 650 V, RBE = ∞ VCE = 5 V, IC = 0.3 A*1 VCE = 5 V, IC = 1.5 A*1 V V µs µs µs I C = 1.5 A, IB1 = 0.3 A, I B2 = –0.75 A, VCC ≅ 250 V I C = 0.75 A, IB = 0.15 A*1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO I CBO I CEO
7 — — 15 7 — — — — —
— — — — — — — — — —
— 100 100 — — 1.0 1.5 1.0 3.0 1.0
V µA µA
DC current transfer ratio
hFE1 hFE2
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
VCE(sat) VBE(sat) t on t stg tf
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 10 3 Collector current IC (A) 1.0 0.3 0.1 0.03 40 iC(peak)
Area of Safe Operation
µs 25 µs 50 0 µs s 25 s m 0m 1 =1 on ati PW er Op 5°C DC = 2 TC
ICmax(Continuous)
20
0.01 Ta = 25°C, 1 Shot 0.003
0
50 100 Case temperature TC (°C)
150
0.001
1
3 10 30 100 300 1,000 Collector to emitter voltage VCE (V)
2
2SC2979
Transient Thermal Resistance Collector Current Derating Rate Collector current derating rate (%) Thermal resistance θj-c (°C/W) 100 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0 50 100 Case temperature TC (°C) 150 0.01 TC = 25°C 0.1 0.1 Time t 1.0 1.0 10 (s) 10 (ms)
10 0m s
80
IS
10 ms–10
s
/B
Lim
it A
60
re
a
–1 µs
40
20
Reverse Bias Area of Safe Operation 10 Collector to emitter voltage V(BR)CER (V) 1,000
Collector to Emitter Voltage vs. Base to Emitter Resistance IC = 1 mA
Collector current IC (A)
8 600 V, 6 A
900
6 4
800 V, 3 A 2 IB2 = –0.6 A 850 V, 1.0 A
800
0
400 600 800 1,000 200 Collector to emitter voltage VCE (V)
700 100
1k 10 k 100 k 1M Base to emitter resistance RBE (Ω)
3
2SC2979
Typical Output Characteristics 2.5
0. 7
Typical Transfer Characteristics 2.5 TC = 25°C VCE = 5 V
0.6
Collector current IC (A)
0.3
1.5 1.0
0.2
Collector current IC (A) TC = 25°C
2.0
0.5 0.4
2.0
1.5
0.1
0.05 A
1.0
0.5 IB = 0 0
0.5
3 4 5 1 2 Collector to emitter voltage VCE (V)
0
1.2 1.6 2.0 0.4 0.8 Base to emitter voltage VBE (V)
DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) 100 DC current transfer ratio hFE 10 3 1.0 0.3 0.1 0.03
Collector to Emitter Saturation Voltage vs. Base Current
30
75°C
25°C
IC = 0.75 A
1.5 A
3A
10
TC = –
25°C
3 VCE = 5 V 1 1.0 3 0.01 0.03 0.1 0.3 Collector current IC (A) 10
TC = 25°C 0.1 0.3 1.0 Base current IB (A) 3 10
0.01 0.01 0.03
4
2SC2979
Saturation Voltage vs. Collector Current 10 3 1.0 0.3 VCE(sat) 0.1 0.03 0.01 0.005 0.01 TC = 25°C IC = 5 IB 0.03 0.1 0.3 1.0 Collector current IC (A) 35 Switching time t (µs) VBE(sat) 10 tstg 3 1.0 tf 0.3 ton 0.1 0.03 0.01 0.005 0.01 IC = 5 IB1 = –2 IB2 VCC = 250 V 0.03 0.1 0.3 1.0 Collector current IC (A) 35
Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V)
Switching Time vs. Collector Current
Switching Time vs. Case Temperature 5 3 Switching time t (µs) tstg
1.0 tf 0.3 ton
0.1 0.05 0
IC = 1.5 A IB1 = 0.3 A,IB2 = –0.75 A VCC = 250 V 25 50 75 100 Case temperature TC (°C) 125
5
2SC2979
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
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