2SC4050

2SC4050 Silicon NPN Epitaxial REJ03G0715-0200 (Previous ADE-208-1095) Rev.2.00 Aug.10.2005 Application Low frequency amplifier, switching Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 120 120 5 100 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SC4050 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) Notes: 1. The 2SC4050 is grouped by hFE as follows. 2. Pulse test Grade D E Mark KID KIE hFE 250 to 500 400 to 800 Min 120 120 5 — — 250 — — Typ — — — — — — — — Max — — — 0.1 0.1 800 0.1 1.1 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA*2 IC = 10 mA, IB = 1 mA*2 IC = 10 mA, IB = 1 mA*2 Rev.2.00 Aug 10, 2005 page 2 of 5 2SC4050 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 10 18 Typical Output Characteristics Collector Current IC (mA) 8 16 14 100 6 12 10 4 8 6 4 2 µA IB = 0 50 2 0 50 100 150 0 4 8 12 16 20 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 1,000 Typical Transfer Characteristics 100 VCE = 6 V DC Current Transfer Ratio hFE Collector Current IC (mA) Ta = 75°C 300 –25 25 Ta = 75°C 10 25 –25 1.0 100 30 VCE = 12 V Pulse 0.1 0 0.2 0.4 0.6 0.8 1.0 10 1 3 10 30 100 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Pulse IC = 10 IB 0.3 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 1,000 500 VCE = 6 V Pulse 1.0 200 100 50 0.1 Ta = 75°C 0.03 –25 25 20 10 0.5 0.01 1 3 10 30 100 1.0 2 5 10 20 50 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SC4050 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 IE = 0 f = 1 MHz 30 10 3 0 3 10 30 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SC4050 Package Dimensions JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g D e A Q c E HE L A A xM S A b L1 A3 e LP Reference Symbol Dimension in Millimeters A2 A A1 S b b1 c b2 A-A Section e1 c1 I1 Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 1.95 0.3 Ordering Information Part Name 2SC4050KIDTR 2SC4050KIETR 3000 Quantity Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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