2SD667, 2SD667A
Silicon NPN Epitaxial
REJ03G0769-0200 (Previous ADE-208-1137) Rev.2.00 Aug.10.2005
Application
• Low frequency power amplifier • Complementary pair with 2SB647/A
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 –55 to +150 2SD667A 120 100 5 1 2 0.9 150 –50 to +150 Unit V V V A A W °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD667, 2SD667A
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT Min 120 80 5 — 60 30 — — — 2SD667 Typ Max — — — — — — — — — 140 — — 10 320 — 1 1.5 — 2SD667A Min Typ Max 120 — — 100 5 — 60 30 — — — — — — — — — — 140 12 — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, 2 IC = 150 mA* VCE = 5 V, 2 IC = 500 mA* IC = 500 mA, 2 IB = 50 mA* VCE = 5 V, 2 IC = 150 mA* VCE = 5 V, 2 IC = 150 mA* VCB = 10 V, IE = 0, f = 1 MHz
Cob — 12 — — Collector output capacitance Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows. 2. Pulse test B C D 2SD667 60 to 120 100 to 200 160 to 320 2SD667A 60 to 120 100 to 200
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD667, 2SD667A
Main Characteristics
Maximum Collector Dissipation Curve Typical Output Characteristics
1.0 35 30 25 20 15 10 5 0.4
Collector Power Dissipation PC (W)
1.2
Collector Current IC (A)
0.8
0.8
0.6
0.4
P
2
C
=0
.9
0.2
W
1 0.5mA IB = 0
0
50
100
150
0
2
4
6
8
10
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
300
Typical Transfer Characteristics
500 200
DC Current Transfer Ratio hFE
VCE = 5 V
VCE = 5 V 250 200 150 100 50 0
Collector Current IC (mA)
°C Ta = 75
25 –25
Ta = 7
20 10 5 2 1 0 0.2 0.4
25 –25
0.6 0.8
50
5°C
100
1.0
1
3
10
30
100
300
1,000
Base to Emitter Voltage VBE (V) Saturation Voltage vs. Collector Current
Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current
Collector to Emitter Saturation Voltage VCE(sat) (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
Gain Bandwidth Product fT (MHz)
0.6 0.5 0.4 0.3 0.2 0.1 0
1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 VCE(sat) IC = 10 IB Pulse VBE(sat)
240 VCE = 5 V 200 160 120 80 40 0 10
Ta
°C = –25
25 75
75 5 2 C 25 ° =– Ta
30
100
300
1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD667, 2SD667A
Collector Output Capacitance vs. Collector to Base Voltage
Collector Output Capacitance Cob (pF)
200 100 50 20 10 5 2 1 2 5 10 20 50 100 f = 1 MHz IE = 0
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD667, 2SD667A
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name TO-92 Mod / TO-92 ModV
MASS[Typ.] 0.35g
Unit: mm
4.8 ± 0.4
3.8 ± 0.4
0.65 ± 0.1 0.75 Max 0.55 Max 0.60 Max
2.3 Max 0.7
10.1 Min
8.0 ± 0.5
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SD667BTZ-E 2SD667CTZ-E 2SD667DTZ-E 2SD667ABTZ-E 2SD667ACTZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
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