2SK3160

2SK3160 Silicon N Channel MOS FET High Speed Power Switching REJ03G1085-0300 (Previous: ADE-208-751A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 23 S Rev.3.00 Sep 07, 2005 page 1 of 7 2SK3160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 200 ±20 10 40 10 10 6.6 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 ±20 — — 1.0 — — 8 — — — — — — — — — Typ — — — — — 130 150 13 1100 300 150 15 75 280 110 0.85 100 Max — — ±10 10 2.5 170 190 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 VNote4 ID = 5 A, VGS = 4 V Note4 ID = 5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 diF/ dt = 50 A/µs Rev.3.00 Sep 07, 2005 page 2 of 7 2SK3160 Main Characteristics Power vs. Temperature Derating 40 100 30 10 µ 0µ s 1m s =1 DC 0m s Op s( era 1s tio ho n( t) T PW Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 30 10 3 1 10 20 10 =2 5° Operation in C) 0.3 this area is 0.1 limited by RDS(on) c 0.03 0 0.01 50 100 150 200 1 Ta = 25°C 2 5 10 20 50 100 200 500 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 5V 20 4V 3.5 V Pulse Test Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 12 Drain Current ID (A) 16 16 3V 12 8 8 Tc = 75°C –25°C 25°C 4 VGS =2.5 V 4 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 5 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 4 Static Drain to Source on State Resistance RDS (on) (mΩ) 200 100 50 VGS = 4 V 3 10 V 2 ID = 10 A 5A 2A 1 20 10 1 2 5 10 20 50 100 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.3.00 Sep 07, 2005 page 3 of 7 2SK3160 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 500 Pulse Test 400 10 A 10 A 2, 5 A 100 0 –40 10 V 0 40 80 120 160 2, 5 A 50 25°C 20 10 5 2 1 0.5 0.1 VDS = 10 V Pulse Test Static Drain to Source on State Resistance RDS (on) (mΩ) Forward Transfer Admittance vs. Drain Current Tc = –25°C 75°C 300 VGS = 4 V 200 0.3 1 3 10 30 100 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1000 10000 di / dt = 50 A / µs VGS = 0, Ta = 25°C 5000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 2000 1000 500 200 100 50 20 10 VGS = 0 f = 1 MHz Ciss 200 100 50 Coss Crss 20 10 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 200 VGS Switching Characteristics 20 500 300 160 120 VDD = 150 V 100 V 50 V VDS 16 Switching Time t (ns) td(off) 100 30 10 tf tr 12 80 ID = 10 A VDD = 150 V 100 V 50 V 8 td(on) 40 4 0 100 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0 20 40 60 80 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current ID (A) Rev.3.00 Sep 07, 2005 page 4 of 7 2SK3160 Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating (A) 20 Repetitive Avalanche Energy EAR (mJ) 10 IAP = 10 A VDD = 50 V duty < 0.1 % Rg > 50 Ω Reverse Drain Current IDR 16 10 V 12 8 6 8 VGS = 0, –5 V 4 4 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 2 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17°C/W, Tc = 25°C PDM D= PW T 0.03 0.02 1 0.0 PW T 0.01 10 µ 1s t ho pu lse 100 µ 1m 10 m 100 m 1 10 Pulse Width Avalanche Test Circuit VDS Monitor L IAP Monitor PW (S) Avalanche Waveform EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP Rg D. U. T VDD VDS ID Vin 15 V 50 Ω 0 VDD Rev.3.00 Sep 07, 2005 page 5 of 7 2SK3160 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω VDD = 30 V Vout 10% 10% 10% Vout Monitor Switching Time Waveforms 90% 90% td(on) tr 90% td(off) tf Rev.3.00 Sep 07, 2005 page 6 of 7 2SK3160 Package Dimensions JEITA Package Code SC-67 RENESAS Code PRSS0003AD-A Package Name TO-220FM / TO-220FMV MASS[Typ.] 1.8g Unit: mm 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK3160-E Quantity 500 pcs Box (Sack) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 7 of 7 14.0 ± 1.0 17.0 ± 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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