2SK3634-Z-E1-AZ

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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3634 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3634 TO-251 (MP-3) 2SK3634-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • TO-251/TO-252 package (TO-251) • Avalanche capability rated ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 200 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A ID(pulse) ±18 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (Pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 6.0 A Single Avalanche Energy Note2 EAS 3.6 mJ IAR 6.0 A EAR 2.0 mJ Repetitive Avalanche Current Note3 Repetitive Pulse Avalanche Energy Note3 (TO-252) Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch ≤ 125°C , RG = 25 Ω, VDD = 100 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15936EJ3V0DS00 (3rd edition) Date Published August 2006 NS CP(K) Printed in Japan The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2001 2SK3634 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 μA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 4.5 V | yfs | VDS = 10 V, ID = 3.0 A 2 4 RDS(on) VGS = 10 V, ID = 3.0 A 0.47 Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Ω 0.60 Input Capacitance Ciss VDS = 10 V 270 pF Output Capacitance Coss VGS = 0 V 75 pF Reverse Transfer Capacitance Crss f = 1 MHz 33 pF Turn-on Delay Time td(on) VDD = 100 V, ID = 3.0 A 4 ns VGS = 10 V 8 ns RG = 0 Ω 14 ns 6 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 160 V 9 nC Gate to Source Charge QGS VGS = 10 V 1.5 nC Gate to Drain Charge QGD ID = 6.0 A 4.5 nC VF(S-D) IF = 16 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 6 A, VGS = 0 V 100 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 320 nC Body Diode Forward Voltage TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D15936EJ3V0DS td(on) tr ton td(off) tf toff 2SK3634 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 25 100 80 60 40 20 20 15 10 5 0 0 0 25 50 75 100 125 150 0 175 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 P W = 100 μs 1 ms 10 m s I D(D C) = 6 A R D S (on) Lim ited (V G S = 10 V ) 1 0.1 P ower D issipation Lim ited 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 10 R th( j-A) = 125°C/W 100 10 R th( j-C) = 6.25°C/W 1 0.1 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15936EJ3V0DS 3 2SK3634 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 30 P ulse d V D S = 10 V Pulsed V GS = 10 V 10 ID - Drain Current - A ID - Drain Current - A 25 20 15 10 5 T ch = 1 25 °C 75 °C 25 °C −25 °C 0 .1 0 .0 1 0.0 0 1 0 0 .00 0 1 0 5 10 15 20 25 30 0 5 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 | yfs | - Forward Transfer Admittance - S 4.5 4 3.5 3 2.5 2 -50 -25 0 25 50 75 100 125 150 10 1 0.1 0.01 0.01 0.1 1.5 1 0.5 10 100 RDS(on) - Drain to Source On-state Resistance - Ω Pulsed V G S = 10 V 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2 0.1 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.01 Pulsed V DS = 10 V T A = −25°C 25°C 75°C 125°C Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω 15 VGS - Gate to Source Voltage - V V SD = 10 V ID = 1 mA ID - Drain Current - A 4 10 VDS - Drain to Source Voltage - V 5 VGS(off) - Gate Cut-off Voltage - V 1 1 Pulsed 0.9 0.8 ID = 6.0 A 3.0 A 1.5 A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 VGS - Gate to Source Voltage - V Data Sheet D15936EJ3V0DS 18 20 2SK3634 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 1.6 Pulsed V GS = 10 V 1.4 1.2 ID = 6 A 3A 1 0.8 0.6 0.4 0.2 C oss 100 C rss 10 0 1 -25 0 25 50 75 100 125 150 0.1 1 SWITCHING CHARACTERISTICS 100 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 240 V D D = 100 V V G S = 10 V RG = 0 Ω t d(off) tr 10 12 I D = 6.0 A 220 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V tf t d(on) 200 10 V DD = 160 V 100 V 40 V 180 160 8 140 V GS 120 6 100 80 4 60 40 2 V DS 20 0 1 0.1 1 10 0 0 100 ID - Drain Current - A 1 2 3 4 5 6 7 8 9 10 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 1000 VGS = 0 V di/dt = 100 A /μ s trr - Reverse Recovery Time - ns Pulsed VGS = 0 V 10 1 0.1 100 10 1 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF – Diode Forward Current - A Data Sheet D15936EJ3V0DS 5 VGS - Gate to Drain Voltage - V -50 Tch - Channel Temperature - °C IF – Diode Forward Current - A V GS = 0 V f = 1 MHz C iss Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK3634 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 VDD = 100 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 10 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 6.0 A EAS = 3.6 mJ 1 0.1 0.01 0.1 1 10 V DD = 100 V R G = 25 Ω V GS = 20 → 0 V IAS ≤ 6.0 A 80 60 40 20 0 25 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 50 Data Sheet D15936EJ3V0DS 2SK3634 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 2.3 ±0.2 1.1 ±0.2 1 2 3 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 +0.2 0.5 −0.1 +0.2 0.5 −0.1 2.3 2.3 0.75 Note 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 5.5 ±0.2 13.7 MIN. 7.0 MIN. 3 5.5 ±0.2 1.6 ±0.2 2 4 5.6 ±0.3 4.4 ±0.2 1.5 −0.1 5.0 ±0.2 0.5 ±0.1 4 1 +0.2 6.5 ±0.2 9.5 ±0.5 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 1) TO-251 (MP-3) 2.3 ±0.3 0.15 ±0.15 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) Note The depth of notch at the top of the fin is from 0 to 0.2 mm. EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15936EJ3V0DS 7 2SK3634 • The information in this document is current as of August, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1