BCR16CM

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16CM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dimensions in mm 4.5 4 1.3 16 MAX ∗ 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 4.5 7.0 φ3.6±0.2 0.5 2.6 123 24 1 2 33 4 ∗ Measurement point of case temperature • IT (RMS) ...................................................................... 16A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc=100°C ✽3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 16 170 121 5.0 0.5 10 2 –40 ~ +125 –40 ~ +125 2.0 Unit A A A2s W W V A °C °C g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage ✽5 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage ✽2 @ # ! Gate trigger current ✽2 @ # Tj=125°C, VD=1/2VDRM Junction to case ✽3 ✽4 Tj=125°C Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM=25A, Instantaneous measurement Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Min. — — — — — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 — 1.4 — Unit mA V V V V mA mA mA V °C/ W V/µs Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 0.2 — 10 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=–8.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 ON-STATE CURRENT (A) SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 7 5 3 2 Tj = 125°C Tj = 25°C 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 IGM = 2A 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IFGT I, IRGT I IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 101 102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 40 30 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 CASE TEMPERATURE (°C) 35 140 120 100 80 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 60 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (°C) 100 80 60 40 20 0 0 2 4 6 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED NATURAL CONVECTION 120 120 120 t2.3 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 102 7 5 4 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) TYPICAL EXAMPLE HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120140 JUNCTION TEMPERATURE (°C) LACHING CURRENT (mA) DISTRIBUTION T2 , G  TYPICAL  – T2 , G–  EXAMPLE + + 0 40 80 120 160 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) T2 , G TYPICAL EXAMPLE + – Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/ µs ) BREAKOVER VOLTAGE (dv/dt = 1V/ µs ) 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT III QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS 7 SUPPLY TYPICAL TIME VOLTAGE 5 EXAMPLE (di/dt)c MAIN CURRENT TIME 3 Tj = 125°C MAIN VOLTAGE TIME 2 IT = 4A VD (dv/dt)c τ = 500µs VD = 200V 101 f = 3Hz III QUADRANT 7 5 MINIMUM CHARAC3 TERISTICS 2 VALUE 100 70 10 I QUADRANT 23 5 7 101 23 5 7 102 23 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16CM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dimensions in mm 4.5 4 1.3 16 MAX ∗ 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 4.5 7.0 φ3.6±0.2 0.5 2.6 123 24 1 2 33 4 ∗ Measurement point of case temperature • IT (RMS) ...................................................................... 16A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc=125°C ✽3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 16 170 121 5.0 0.5 10 2 –40 ~ +150 –40 ~ +150 2.0 Unit A A A2s W W V A °C °C g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage ✽5 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage ✽2 @ # ! Gate trigger current ✽2 @ # Test conditions Tj=150°C, VDRM applied Tc=25°C, ITM=25A, Instantaneous measurement Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Min. — — — — — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 — 1.4 — Unit mA V V V V mA mA mA V °C/ W V/µs Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Tj=125°C/150°C, VD=1/2VDRM Junction to case ✽3 ✽4 Tj=125°C/150°C — — 0.2/0.1 — 10/1 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c=–8.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 ON-STATE CURRENT (A) SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.5 1.0 Tj = 150°C Tj = 25°C 1.5 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 3 2 VGM = 10V GATE VOLTAGE (V) PG(AV) = 0.5W PGM = 5W GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 IGM = 2A IRGT III IFGT I, IRGT I 10–1 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (°C) 40 35 30 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 140 CURVES APPLY 120 REGARDLESS OF CONDUCTION ANGLE 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (°C) 100 80 60 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 NATURAL CONVECTION 120 120 120 t2.3 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) CURVES APPLY 40 REGARDLESS OF CONDUCTION 20 ANGLE RESISTIVE, INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 5 3 TYPICAL EXAMPLE 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140160 JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 102 7 5 4 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) LACHING CURRENT (mA) DISTRIBUTION + T2 , G+  TYPICAL  – T2 , G–  EXAMPLE 0 40 80 120 160 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) + T2 , G – TYPICAL EXAMPLE Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) 160 140 TYPICAL EXAMPLE Tj = 150°C BREAKOVER VOLTAGE (dv/dt = xV/ µs ) BREAKOVER VOLTAGE (dv/dt = 1V/ µs ) 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/ µs ) BREAKOVER VOLTAGE (dv/dt = 1V/ µs ) 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT III QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 102 7 5 3 2 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS (Tj = 125°C) SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD COMMUTATION CHARACTERISTICS (Tj = 150°C) 102 TYPICAL 7 EXAMPLE 5 Tj = 150°C 3 IT = 4A 2 τ = 500µs VD = 200V 101 f = 3Hz 7 5 3 2 100 7 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD 101 7 MINIMUM 5 CHARACTERISTICS 3 VALUE 2 100 7 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz III QUADRANT III QUADRANT I QUADRANT MINIMUM CHARACTERISTICS VALUE 3 5 7 101 23 5 7 102 23 I QUADRANT 3 5 7 101 23 5 7 102 23 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) GATE CURRENT PULSE WIDTH (µs) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC LOAD 6V V A RG 6V V A RG C1 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar. 2002