BIC703M

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. BIC703M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-984D (Z) 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) • Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.8 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions. • Provide mini mold package; MPAK-4 (SOT-143Rmod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “CZ–”. BIC703M is individual type number of HITACHI BICMIC. BIC703M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 30 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — 0.8 12 24 Typ — — — — 1.1 15 29 Max — — — +100 1.5 18 34 Unit V V V nA V mA mS Test Conditions I D = 200µA VG2S = 0,VG1 = open I G1 = +1mA, VG2S = VDS = 0 I G2 = +10 µA, VG1S = VDS = 0 VG2S = +5V, V G1S = VDS = 0 VDS = 5V, ID = 100µA VG1 = open VDS = 5V , VG2S = 4V VG1 = open VDS = 5V, ID = 15mA VG2S =4V, f = 1kHz Input capacitance Output capacitance c iss c oss 1.6 0.6 — 23 — 17 — 2.0 1.0 0.022 28 1.0 22 1.8 2.4 1.4 0.05 — 1.8 — 2.4 pF pF pF dB dB dB dB VDS = 5V, VG2S =4V VG1 = open f = 1MHz VDS = 5V, VG2S =4V VG1 = open f = 200MHz VDS = 5V, VG2S =4V VG1 = open f = 900MHz Gate2 to source cutoff current I G2SS Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance I D(op) |yfs| Reverse transfer capacitance c rss Power gain Noise figure Power gain Noise figure PG1 NF1 PG2 NF2 2 BIC703M Test Circuits • DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) VG1 VG2 Gate 2 Gate 1 Open A ID Drain Source • 200 MHz Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50Ω) 1000p 36p L1 1000p 47k BICMIC L2 1000p 47k Output(50Ω) 10p max 1000p 1SV70 RFC 1SV70 1000p VD Unit : Resistance (Ω) Capacitance (F) L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BIC703M • 900 MHz Power Gain, Noise Figure Test Circuit VG2 C4 VD C5 R1 C3 G2 Input L1 L2 G1 R2 D L3 S RFC Output L4 C1 C2 C1, C2 C3 C4, C5 R1 R2 : : : : : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 47 kΩ 4.7 kΩ L1: 10 10 8 L2: 26 3 3 (φ1mm Copper wire) Unit : mm 21 L3: 7 L4: 29 10 7 18 10 RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm 4 BIC703M Maximum Channel Power Dissipation Curve Typical Output Characteristics VG1 = open I D (mA) 150 16 VG2S = 4 V 12 3V 8 2V Channel Power Dissipation Pch (mW) 200 20 100 50 Drain Current 4 1V 0 50 100 150 Ta (°C) 200 0 1 2 3 4 V DS (V) 5 Ambient Temperature Drain to Source Voltage Forward Transfer Admittance | yfs | (mS) Forward Transfer Admittance vs. Gate1 Voltage 50 40 30 25 Power Gain PG (dB) 20 15 10 5 0 1 Power Gain vs. Gate2 to Source Voltage 30 20 VG1S = 4 V 3V 10 1V 0 1.0 Gate1 Voltage V G1 2.0 (V) 2V V DS = 5 V V G1 = open f = 200 MHz 4 2 3 Gate2 to Source Voltage V G2S (V) 5 BIC703M Noise Figure vs. Gate2 to Source Voltage 5 V DS = 5 V V G1 = open f = 200 MHz 30 25 Power Gain PG (dB) 20 15 10 5 0 1 V DS = 5 V V G1 = open f = 900 MHz 4 2 3 Gate2 to Source Voltage V G2S (V) Power Gain vs. Gate2 to Source Voltage Noise Figure NF (dB) 4 3 2 1 0 1 4 2 3 Gate2 to Source Voltage V G2S (V) Noise Figure vs. Gate2 to Source Voltage 5 Input Capacitance Ciss (pF) V DS = 5 V V G1 = open f = 900 MHz 4 Input Capacitance vs. Gate2 to Source Voltage Noise Figure NF (dB) 4 3 3 2 V DS = 4 V V G1 = open f = 1 MHz 2 1 1 0 1 4 2 3 Gate2 to Source Voltage V G2S (V) 0 1 2 3 4 Gate2 to Source Voltage V G2S (V) 6 BIC703M Gain Reduction vs. Gate2 to Source Voltage 0 Gain Reduction GR (dB) Gain Reduction GR (dB) Gain Reduction vs. Gate2 to Source Voltage 0 10 10 20 20 30 40 V DS = 5 V V G1 = open V G2S = 4 V f = 200 MHz 30 40 V DS = 5 V V G1 = open V G2S = 4 V f = 900 MHz 50 4 2 3 1 0 Gate2 to Source Voltage V G2S (V) 50 4 2 3 1 0 Gate2 to Source Voltage V G2S (V) 7 BIC703M S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 - .2 -5 -4 -3 - .4 - .6 - .8 - 1.5 -2 - 120° -1 - 90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 1 / div. 60° - 150° - 30° - 60° Test Condition: VDS = 5 V , VG1 = open VG2S = 4 V , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) Test Condition: VDS = 5 V , VG1 = open VG2S = 4 V , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.004/ div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 - .2 - 150° - 30° - .4 - 120° - 60° - 90° - .6 - .8 - 1.5 -2 -1 -5 -4 -3 Test Condition: VDS = 5 V , VG1 = open VG2S = 4 V , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) Test Condition: VDS = 5 V , VG1 = open VG2S = 4 V , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) 8 BIC703M Sparameter (VDS = 5 V, VG2S = 4 V, VG1 = open, Zo = 50 Ω) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1.000 0.993 0.991 0.984 0.978 0.970 0.958 0.954 0.945 0.932 0.920 0.910 0.900 0.887 0.870 0.863 0.853 0.839 0.827 0.819 ANG -3.3 -7.2 -10.9 -15.0 -19.0 -22.8 -26.7 -30.3 -33.8 -37.5 -40.6 -44.3 -47.5 -50.9 -54.4 -57.6 -60.9 -63.6 -66.5 -70.1 S21 MAG 2.80 2.78 2.77 2.74 2.72 2.68 2.64 2.60 2.56 2.50 2.46 2.41 2.37 2.31 2.27 2.22 2.18 2.12 2.07 2.04 ANG 175.9 170.9 166.1 161.2 156.5 151.8 147.2 142.7 138.6 134.1 129.8 125.7 121.6 117.8 113.6 110.0 105.8 102.2 98.6 94.9 S12 MAG 0.00106 0.00171 0.00253 0.00356 0.00442 0.00485 0.00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.00716 0.00667 ANG 58.8 75.7 75.1 77.4 78.2 80.0 74.7 71.7 73.3 71.8 70.7 69.9 69.1 67.8 70.8 73.3 75.2 75.8 88.1 92.7 S22 MAG 0.990 0.992 0.991 0.987 0.985 0.982 0.978 0.973 0.968 0.963 0.958 0.952 0.947 0.942 0.936 0.929 0.924 0.917 0.912 0.906 ANG -2.4 -4.7 -7.2 -9.6 -12.2 -14.7 -17.1 -19.6 -22.0 -24.2 -26.7 -28.9 -31.3 -33.4 -35.8 -37.9 -40.3 -42.5 -44.5 -46.7 9 BIC703M Package Dimensions As of January, 2001 Unit: mm 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.4 – 0.05 + 0.1 0.1 0.4 + 0.05 – 0.65 0.16 – 0.06 + 0.1 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.85 1.8 ± 0.2 0.3 1.1 – 0.1 + 0.2 0.65 0.4 – 0.05 + 0.1 0.1 0.6 + 0.05 – 2.8 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK-4 — Conforms 0.013 g 10 BIC703M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : -538-6533/538-8577 Fax : -538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : -(2)-2718-3666 Fax : -(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : -(2)-735-9218 Fax : -(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 585160 Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 11