CR6CM-12B

Preliminary Datasheet CR6CM-12B Thyristor Medium Power Use Features  IT (AV) : 6 A  VDRM : 600 V  IGT : 10 mA  Non-Insulated Type  Planar Passivation Type R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. Cathode Anode Gate Anode 3 1 12 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Page 1 of 6 CR6CM-12B Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Ratings 9.4 6 90 41 5 0.5 6 10 2 – 40 to +150 – 40 to +150 2.0 Unit A A A A2s W W V V A °C °C g Conditions Preliminary Commercial frequency, sine half wave Note1 180° conduction, Tc = 121°C 50Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Min. — — — — 0.2/0.1 — — — Typ. — — — — — — 15 — Max. 2.0/5.0 2.0/5.0 1.7 1.0 — 10 — 2.5 Unit mA mA V V V mA mA °C/W Test conditions Tj = 125°C/150°C, VRRM applied Tj = 125°C/150°C, VDRM applied Tc = 25°C, ITM = 20 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case. 2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Page 2 of 6 CR6CM-12B Preliminary Performance Curves Maximum On-State Characteristics 103 Tc = 125°C 100 Rated Surge On-State Current Surge On-State Current (A) 1 2 3 4 5 On-State Current (A) 80 102 60 40 101 20 0 100 100 0 101 102 On-State Voltage (V) Conduction Time (Cycles at 50Hz) 102 × 100 (%) Gate Characteristics Gate Trigger Current vs. Junction Temperature 103 Typical Example 101 VFGM = 6V PGM = 5W PG(AV) = 0.5W Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 102 VGT = 1V 100 IGT = 10mA VGD = 0.1V 10-1 101 102 101 IFGM = 2A 103 100 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature Transient Thermal Impedance (°C/W) 103 Typical Example Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 101 102 100 101 –40 0 40 80 120 160 10–1 –3 10 10–2 10–1 100 101 Junction Temperature (°C) Time (s) R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Page 3 of 6 CR6CM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 16 Average Power Dissipation (W) 12 10 8 6 4 2 0 0 2 4 6 θ = 30° 180° Case Temperature (°C) 14 140 120 100 80 60 40 20 0 0 180° 120° 90° 60° θ = 30° 2 4 6 8 θ 360° Resistive, inductive loads 120° 90° 60° θ 360° Resistive, inductive loads 8 10 12 10 12 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 140 Maximum Average Power Dissipation (Single-Phase Full Wave) 16 Average Power Dissipation (W) 12 10 8 6 4 2 0 0 2 θ = 30° 180° 120° Case Temperature (°C) 14 θ θ 120 100 80 60 40 20 θ = 30° 2 4 60° 6 8 360° Resistive loads 90° 60° θ θ 180° 120° 90° 360° Resistive loads 4 6 8 10 12 0 0 10 12 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 160 140 Maximum Average Power Dissipation (Rectangular Wave) 16 Average Power Dissipation (W) 14 12 10 8 6 4 2 0 0 2 4 6 θ 360° Resistive, inductive loads 8 10 12 θ = 30° Case Temperature (°C) 90° 60° DC 270° 180° 120° 120 100 80 60 40 20 0 0 180° 270° 60° DC 90° 120° θ = 30° 2 4 6 8 10 12 Resistive, inductive loads θ 360° Average On-State Current (A) Average On-State Current (A) R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Page 4 of 6 CR6CM-12B Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) Preliminary Breakover Voltage vs. Junction Temperature Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 –40 × 100 (%) 160 140 120 100 80 60 40 20 Typical Example Typical Example Breakover Voltage (Tj = 25°C) Breakover Voltage (Tj = t°C) 0 –40 0 40 80 120 160 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) × 100 (%) 160 140 120 100 80 60 40 20 × 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage Typical Example Tj = 125°C Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 01 10 102 103 104 Typical Example Tj = 150°C Breakover Voltage (dv/dt = 1V/μs) 01 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = vV/μs) Rate of Rise of Off-State Voltage (V/μs) Turn-Off Time vs. Junction Temperature 80 70 Holding Current vs. Junction Temperature × 100 (%) 103 Typical Example Typical Example Turn-Off Time (μs) Holding Current (Tj = t°C) Holding Current (Tj = 25°C) 60 50 40 30 102 Distribution 20 10 101 –40 0 40 80 120 160 0 IT = 6A, –di/dt = 5A/μs, VD = 300V, dv/dt = 20V/μs VR = 50V 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Page 5 of 6 CR6CM-12B Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 Preliminary Typical Example 102 101 -1 10 100 101 102 Gate Current Pulse Width (μs) Package Dimensions Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code T220AB MASS[Typ.] 2.0g Unit: mm 10.5Max 4.5 1.3 3.2 16Max 3.8Max 1.0 12.5Min 0.8 7.0 φ3.6 2.54 2.54 0.5 2.6 Ordering Information Orderable Part Number CR6CM-12B#B00 CR6CM-12B-A8#B00 Note: Packing Bag Tube Quantity 100 pcs. 50 pcs. Remark Straight type A8 Lead form Please confirm the specification about the shipping in detail. R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 4.5Max Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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