CY25CAJ-8F-T13

CY25CAJ-8F Nch IGBT for Strobe Flash REJ03G1202-0200 Preliminary Rev.2.00 May 24, 2005 Features • • • • Ultra small surface mount package (VSON-8) VCES: 400 V ICM: 150 A Drive voltage: 4 V Outline PVSN0008JA-A (Package Name: VSON-8) 5 8 4 1 1 2 3 4 8 7 6 5 1, 2 : Emitter 3 : Emitter (for the gate drive) 4 : Gate 5, 6, 7, 8 : Collector Note: PIN 3 is for the Gate drive only. Note that current from the main circuit cannot flow into this section. (Please see page 3) Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 ±6 ±8 150 – 40 to +150 – 40 to +150 Unit V V V A °C °C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) Rev.2.00, May 25, 2005, page 1 of 4 CY25CAJ-8F Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min. 450 — — 0.5 — — Typ. — — — 0.7 4.0 3400 Max. — 10 ±10 1.5 6.0 — Unit V µA µA V V pF Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±8 V, VCS = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 4 V VCE = 25 V, VGE = 10 V, f = 1MHz Performance Curves Maximum Collector Current vs. Gate - Emitter Voltage Pulse Collector Current ICP (A) 200 150 TC = 70°C CM = 400 µF RG = 30 Ω 100 50 0 0 2 4 6 8 Gate - Emitter Voltage VGE (V) Rev.2.00, May 25, 2005, page 2 of 4 CY25CAJ-8F Application Example VCM Trigger Transformer Xe Tube CM + – 8 7 6 5 VGG Control Signal 1 2 3 4 RD5CYD08 RD5CYDT08 (IGBT Drive IC) VCM ICP CM VGE Recommended Operation Maximum Operation Conditions Conditions 330 V 350 V 130 A 300 µF 5V 150 A 400 µF 4V Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 30 Ω, it is satisfied. 3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor. (CM = 400 µF) Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V. Rev.2.00, May 25, 2005, page 3 of 4 CY25CAJ-8F Package Dimensions JEITA Package Code P-VSON8-3x4.4-0.65 RENESAS Code PVSN0008JA-A Package Name TNP-8DBV MASS[Typ.] 0.032g D 1.95 ± 0.1 L1 0.15MAX HE E Lp c Reference Symbol Dimension in Millimeters Min 2.90 4.30 Nom 3.00 4.40 Max 3.10 4.50 0.95 0.25 0.30 0.65 0.35 0.08 0.10 0.09 4.70 0.10 0.15 4.80 0.20 0.25 4.90 0.30 0.40 D E A b A e Lp x e b y x M c HE L1 y Order Code Lead form Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2)+3 Standard order code example CY25CAJ-8F-T13 Note : Please confirm the specification about the shipping in detail. Rev.2.00, May 25, 2005, page 4 of 4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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