EL5410CS-T7

EL5210, EL5410 ® Data Sheet July 5, 2007 30MHz Rail-to-Rail Input-Output Op Amps Features The EL5210 and EL5410 are low power, high voltage rail-torail input-output amplifiers. The EL5210 contains two amplifiers in one package and the EL5410 contains four amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 2.5mA per amplifier, the EL5410 and EL5210 have a bandwidth of 30MHz (-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these amplifiers to offer maximum dynamic range at any supply voltage. • 30MHz -3dB bandwidth The EL5410 and EL5210 also feature fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5410 is available in a space-saving 14 Ld TSSOP package, as well as the industry-standard 14 Ld SOIC. The EL5210 is available in the 8 Ld MSOP and 8 Ld SOIC packages. Both feature a standard operational amplifier pin out. These amplifiers operate over a temperature range of -40°C to +85°C. FN7185.3 • Supply voltage = 4.5V to 16.5V • Low supply current (per amplifier) = 2.5mA • High slew rate = 33V/µs • Unity-gain stable • Beyond the rails input capability • Rail-to-rail output swing • Available in both standard and space-saving fine pitch packages • Pb-free plus anneal available (RoHS compliant) Applications • Driver for A-to-D Converters • Data Acquisition • Video Processing • Audio Processing • Active Filters • Test Equipment • Battery Powered Applications • Portable Equipment Pinouts EL5410 (14 LD TSSOP, SOIC) TOP VIEW VOUTA 1 14 VOUTD VINA- 2 VINA+ 3 13 VIND- - + + EL5210 (8 LD MSOP, SOIC) TOP VIEW VOUTA 1 VINA- 2 8 VS+ - 7 VOUTB + 12 VIND+ VINA+ 3 - 6 VINB- + VS+ 4 11 VS- VINB+ 5 VINB- 6 VOUTB 7 1 VS- 4 5 VINB+ 10 VINC+ + + - - 9 VINC8 VOUTC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2003-2005, 2007. All Rights Reserved All other trademarks mentioned are the property of their respective owners. EL5210, EL5410 Ordering Information PART NUMBER PART MARKING PACKAGE PKG. DWG. # EL5210CS 5210CS 8 Ld SOIC MDP0027 EL5210CS-T7* 5210CS 8 Ld SOIC MDP0027 EL5210CS-T13* 5210CS 8 Ld SOIC MDP0027 EL5210CSZ (Note) 5210CSZ 8 Ld SOIC (Pb-free) MDP0027 EL5210CSZ-T7* (Note) 5210CSZ 8 Ld SOIC (Pb-free) MDP0027 EL5210CSZ-T13* (Note) 5210CSZ 8 Ld SOIC (Pb-free) MDP0027 EL5210CY J 8 Ld MSOP MDP0043 EL5210CY-T7* J 8 Ld MSOP MDP0043 EL5210CY-T13* J 8 Ld MSOP MDP0043 EL5210CYZ (Note) BATAA 8 Ld MSOP (Pb-free) MDP0043 EL5210CYZ-T7* (Note) BATAA 8 Ld MSOP (Pb-free) MDP0043 EL5210CYZ-T13* (Note) BATAA 8 Ld MSOP (Pb-free) MDP0043 EL5410CS 5410CS 14 Ld SOIC MDP0027 EL5410CS-T7* 5410CS 14 Ld SOIC MDP0027 EL5410CS-T13* 5410CS 14 Ld SOIC MDP0027 EL5410CSZ (Note) 5410CSZ 14 Ld SOIC (Pb-free) MDP0027 EL5410CSZ-T7* (Note) 5410CSZ 14 Ld SOIC (Pb-free) MDP0027 EL5410CSZ-T13* (Note) 5410CSZ 14 Ld SOIC (Pb-free) MDP0027 EL5410CR 5410CR 14 Ld TSSOP MDP0044 EL5410CR-T7* 5410CR 14 Ld TSSOP MDP0044 EL5410CR-T13* 5410CR 14 Ld TSSOP MDP0044 EL5410CRZ (Note) 5410CRZ 14 Ld TSSOP (Pb-free) M14.173 EL5410CRZ-T7* (Note) 5410CRZ 14 Ld TSSOP (Pb-free) M14.173 EL5410CRZ-T13* (Note) 5410CRZ 14 Ld TSSOP (Pb-free) M14.173 *“-T7” or “-T13” suffix is for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 2 FN7185.3 July 5, 2007 EL5210, EL5410 Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS + 0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 1kΩ and CL = 12pF to 0V, TA = +25°C unless otherwise specified. DESCRIPTION CONDITION MIN (Note 4) TYP MAX (Note 4) UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 1) IB Input Bias Current RIN Input Impedance 1 GW CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -5.5V to 5.5V 50 70 dB AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ 4.5V 65 80 dB VCM = 0V 7 VCM = 0V 2 -5.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT -4.9 4.8 -4.8 V 4.9 V Short Circuit Current ±120 mA Output Current ±30 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V IS Supply Current (Per Amplifier) No Load 2.5 60 3.75 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) -4.0V ≤ VOUT ≤ 4.0V, 20% to 80% 33 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns BW -3dB Bandwidth 30 MHz GBWP Gain-Bandwidth Product 20 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.12 % dP Differential Phase (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.17 ° 3 FN7185.3 July 5, 2007 EL5210, EL5410 Electrical Specifications PARAMETER VS+ = 5V, VS- = 0V, RL = 1kΩ and CL = 12pF to 2.5V, TA = +25°C unless otherwise specified. DESCRIPTION CONDITION MIN (Note 4) TYP MAX (Note 4) UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 1) IB Input Bias Current RIN Input Impedance 1 GW CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 5.5V 45 66 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 4.5V 65 80 dB VCM = 2.5V 7 VCM = 2.5V 2 -0.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 100 4.8 200 mV 4.9 V Short Circuit Current ±120 mA Output Current ±30 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No Load 2.5 60 3.75 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) 1V ≤ VOUT ≤ 4V, 20% to 80% 33 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns BW -3dB Bandwidth 30 MHz GBWP Gain-Bandwidth Product 20 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.30 % dP Differential Phase (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.66 ° 4 FN7185.3 July 5, 2007 EL5210, EL5410 Electrical Specifications PARAMETER VS+ = 15V, VS- = 0V, RL = 1kΩ and CL = 12pF to 7.5V, TA = +25°C unless otherwise specified. DESCRIPTION CONDITION MIN (Note 4) TYP MAX (Note 4) UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 1) IB Input Bias Current RIN Input Impedance 1 GW CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 15.5V 53 72 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 14.5V 65 80 dB VCM = 7.5V 7 VCM = 7.5V 2 -0.5 µV/°C 60 +15.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -7.5mA VOH Output Swing High IL = 7.5mA ISC IOUT 170 14.65 350 mV 14.83 V Short Circuit Current ±120 mA Output Current ±30 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No Load 2.5 60 3.75 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) 1V ≤ VOUT ≤ 14V, 20% to 80% 33 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns BW -3dB Bandwidth 30 MHz GBWP Gain-Bandwidth Product 20 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.10 % dP Differential Phase (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.11 ° NOTES: 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used 4. Parts are 100% tested at +25°C. Over temperature limits established by characterization and are not production tested. 5 FN7185.3 July 5, 2007 EL5210, EL5410 Typical Performance Curves EL5410 Input Offset Voltage Drift EL5410 Input Offset Voltage Distribution 25 15 21 19 17 13 11 Input Offset Voltage Drift, TCVOS (µV/°C) Input Bias Current vs Temperature Input Offset Voltage vs Temperature 0.008 4 0.004 Input Bias Current (µA) 5 3 2 1 VS=±5V 0 -0.004 -0.008 0 -50 -10 30 70 110 -0.012 -50 150 -10 Temperature (°C) 70 110 150 110 150 Output Low Voltage vs Temperature -4.85 4.96 -4.87 Output Low Voltage (V) 4.95 VS=±5V IOUT=5mA 4.94 4.93 VS=±5V IOUT=5mA -4.89 -4.91 -4.93 4.92 4.91 -50 30 Temperature (°C) Output High Voltage vs Temperature Output High Voltage (V) 9 1 12 8 10 6 4 2 -0 -2 -4 0 -6 0 -8 5 -10 100 7 10 5 Quantity (Amplifiers) 200 -12 Quantity (Amplifiers) 300 Input Offset Voltage (mV) Input Offset Voltage (mV) Typical Production Distortion 20 3 VS=±5V TA=25°C 400 VS=±5V Typical Production Distortion 15 500 -10 30 70 Temperature (°C) 6 110 150 -4.95 -50 -10 30 70 Temperature (°C) FN7185.3 July 5, 2007 EL5210, EL5410 Typical Performance Curves (Continued) Open-Loop Gain vs Temperature Slew Rate vs Temperature 33.85 90 Slew Rate (V/µS) Open-Loop Gain (dB) 33.80 VS=±5V RL=1kΩ 85 80 VS=±5V 33.75 33.70 33.65 75 33.60 70 -50 -10 30 70 110 33.55 -40 150 0 2.9 TA=25°C 160 VS=±5V 2.65 2.5 Supply Current (mA) Supply Current (mA) 120 2.7 2.7 2.3 2.1 1.9 2.6 2.55 2.5 2.45 1.7 2.4 -50 1.5 4 8 12 16 20 -10 Supply Voltage (V) 30 70 110 150 8 10 Temperature (°C) Differential Gain and Phase Harmonic Distortion vs VOP-P -30 0.25 VS=±5V AV=2 RL=1kΩ 0.15 VS=±5V AV=1 RL=1k FIN = 1MHz -40 0.05 -0.05 0 100 200 0.20 0.10 Distortion (dB) Diff Gain (%) 80 EL5410 Supply Current per Amplifier vs Temperature EL5410 Supply Current per Amplifier vs Supply Voltage Diff Phase (°) 40 Temperature (°C) Temperature (°C) HD3 -50 HD2 -60 -70 0 -0.10 -80 0 100 IRE 7 200 0 2 4 6 VOP-P (V) FN7185.3 July 5, 2007 EL5210, EL5410 Typical Performance Curves (Continued) Open Loop Gain and Phase vs Frequency Frequency Response for Various RL 140 250 5 150 3 Phase 20 -50 Gain VS=±5V TA=25°C RL=1kΩ to GND CL=12pF to GND -20 -150 Magnitude (Normalized) (dB) 50 60 10kΩ Phase (°) Gain (dB) 100 -250 -60 10 100 10k 1k 100k 1M 10M 1kΩ 1 560Ω 0 -1 AV=1 VS=±5V CL=12pF -3 150Ω -5 100M 1M 100k Closed Loop Output Impedance vs Frequency Frequency Response for Various CL 20 200 AV=1 VS=±5V TA=25°C 1000pF 10 160 47pF 0 Output Impedance (Ω) Magnitude (Normalized) (dB) 100pF 10pF -10 RL=1kΩ AV=1 VS=±5V -20 -30 100k 120 80 40 1M 10M 0 10k 100M 100k Maximum Output Swing vs Frequency 8 70 6 60 0 10k CMRR (dB) 80 2 10M 30M CMRR vs Frequency 10 4 1M Frequency (Hz) Frequency (Hz) Maximum Output Swing (VP-P) 100M 10M Frequency (Hz) Frequency (Hz) VS=±5V TA=25°C AV=1 RL=1kΩ CL=12pF Distortion