To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
FS40SM-6
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ................................................................................ 300V ¡rDS (ON) (MAX) ............................................................ 0.114Ω ¡ID .......................................................................................... 40A
TO-3P
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 300 ±30 40 120 275 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A W °C °C g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 20A, VGS = 10V ID = 20A, VGS = 10V ID = 20A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 300 ±30 — — 2 — — 12.0 — — — — — — — — — Typ. — — — — 3 0.088 1.76 18.0 2850 580 110 45 125 310 140 1.5 — Max. — — ±10 1 4 0.114 2.28 — — — — — — — — 2.0 0.45
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ID = 20A, VGS = 10V, RGEN = RGS = 50Ω
IS = 20A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 300 MAXIMUM SAFE OPERATING AREA 3 2
POWER DISSIPATION PD (W)
DRAIN CURRENT ID (A)
250 200 150 100 50 0
102 7 5 3 2 101 7 5 3 2 100 7 5 3 TC = 25°C Single Pulse
tw=10µs 100µs 1ms
10ms 100ms DC
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 50 10V TC = 25°C 7V Pulse Test PD = 40 275W 6V 30
OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 20 10V PD = 275W 6V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
16 TC = 25°C Pulse Test
5V
12
20
5V
8
4.5V
10 4V 0 0 10 20 30 40 50
4
4V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.10 0.08 0.06 0.04 0.02 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) TC = 25°C Pulse Test VGS = 10V
TC = 25°C Pulse Test 8 ID = 60A
20V
6
4
40A 20A
2
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
32
24
3 2 101 7 5 3 2 100 0 10 23 5 7 101
TC = 25°C 75°C 125°C
16
8
0
0
4
8
12
16
20
23
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2
CAPACITANCE Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5
SWITCHING TIME (ns)
Ciss
td(off)
103 7 5 3 2 102 7 5
Coss
3 2 tf 102 7 5 3 2 101 100 23 tr td(on) Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 23 5 7 102
Crss
3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20
GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 VGS = 0V Pulse Test 25°C 30 75°C
Tch = 25°C ID = 40A 16 VDS = 50V 100V 200V 8
TC=125°C 40
12
20
4
10
0
0
40
80
120
160
200
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
VGS = 10V ID = 1/2ID Pulse Test
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 10–1 7 0.1 5 3 2
1.0
0.8
PDM
tw T
0.6
0.4
–50
0
50
100
150
0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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