H5N2519P-E

H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 250 ±30 65 195 65 22 30.2 150 0.833 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Rev.2.00 Nov. 19, 2004 page 1 of 6 H5N2519P Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 3.0 28 — — — — — — — — — — — — — — Typ — — — — 47 0.029 4900 700 75 65 310 220 220 120 28 52 1.10 200 1.6 Max — 1 ±0.1 4.5 — 0.035 — — — — — — — — — — 1.65 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 32.5 A, VDS = 10 V Note4 ID = 32.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 32.5 A VGS = 10 V RL = 3.9 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 65 A IF = 65 A, VGS = 0 Note4 IF = 65 A, VGS = 0 diF/dt = 100 A/µs Rev.2.00 Nov. 19, 2004 page 2 of 6 H5N2519P Main Characteristics Power vs. Temperature Derating 200 Pch (W) 1000 300 ID (A) Maximum Safe Operation Area 150 100 30 10 3 DC Op PW er at = 1m 10 m s( 1s 10 s 10 µ 0µ s s Channel Dissipation Drain Current 100 ion (T ho c= t) 25 50 Operation in 1 this area is limited by RDS(on) °C ) 0.3 0.1 0 50 100 150 Tc (°C) 200 1 Case Temperature Ta = 25°C 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 7V 6.5 V ID (A) Typical Output Characteristics 100 10 V Pulse Test 6V 80 VDS = 10 V Pulse Test ID (A) 80 60 5.5 V 40 5V VGS = 4.5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 60 Drain Current Drain Current 40 20 20 Tc = 75°C 25°C –25°C 8 10 VGS (V) 0 2 4 6 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test I D = 65 A 2 1.5 32.5 A 1 0.5 10 A 0 12 4 8 Gate to Source Voltage 16 20 VGS (V) Drain to Source on State Resistance RDS(on) (Ω) 2.5 Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V 0.1 0.05 0.02 0.01 1 2 5 10 20 50 Drain Current ID (A) 100 Rev.2.00 Nov. 19, 2004 page 3 of 6 H5N2519P Static Drain to Source on State Resistance vs. Temperature 0.100 Pulse Test 0.080 V GS = 10 V I D = 65 A Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) 100 50 20 10 5 75°C 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V Pulse Test 10 20 ID (A) 50 100 25°C Tc = –25°C 0.060 32.5 A 0.040 10 A 0.020 0 –40 0 40 80 120 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 160 Drain Current Typical Capacitance vs. Drain to Source Voltage 10000 5000 1000 Reverse Recovery Time trr (ns) Ciss 500 Capacitance C (pF) 2000 1000 500 200 100 50 200 100 50 Coss Crss 20 10 0.1 di / dt = 100 A / µs V GS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics VGS (V) VGS = 0 f = 1 MHz 10 0 20 40 60 80 100 Drain to Source Voltage VDS (V) 20 500 VDS (V) I D = 65 A V DS = 50 V 100 V 200 V VGS 20 10000 Switching Characteristics V GS = 10 V, V DD = 125 V PW = 5 µs, duty < 1 % R g =10 Ω tf t d(off) 400 16 Gate to Source Voltage Switching Time t (ns) Drain to Source Voltage 1000 tr 300 VDD 12 200 8 100 tf t d(on) 100 V DS = 200 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) 4 0 200 0 tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Rev.2.00 Nov. 19, 2004 page 4 of 6 H5N2519P Reverse Drain Current vs. Source to Drain Voltage 100 5 Gate to Source Cutoff Voltage vs. Case Temperature V DS = 10 V I D = 10 mA IDR (A) 80 Gate to Source Cutoff Voltage V GS(off) (V) 4 Reverse Drain Current 60 V GS = 0 V 40 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 3 1 mA 2 0.1 mA 20 1 0 -50 Source to Drain Voltage VSD (V) 0 50 100 150 Case Temperature Tc (°C) 200 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C PDM D= PW T 0.03 0.02 1 0.0 1s PW T h p ot uls e 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (s) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V V DD = 125 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.2.00 Nov. 19, 2004 page 5 of 6 H5N2519P Package Dimensions As of January, 2003 5.0 ± 0.3 15.6 ± 0.3 4.8 ± 0.2 1.5 Unit: mm 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 18.0 ± 0.5 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Ordering Information Part Name H5N2519P-E Quantity 30 pcs Plastic magazine Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Nov. 19, 2004 page 6 of 6 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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