HA17904FPK

HA17904 Series Dual Operational Amplifier REJ03D0688-0100 (Previous: ADE-204-046) Rev.1.00 Jun 15, 2005 Description HA17904 is dual operational amplifier which, provide internal phase compensation and high gain, and mono power source operation is possible. It can be widely applied to control equipment and to general use. Features • Wide range of operating supply voltage and mono power source operation is possible. • Wide range of common mode input voltage possible to operate with an input around 0V, and output around 0V is available. • Frequency characteristics and input bias currrent are temperature compensated. Ordering Information Type No. HA17904PSJ HA17904FPJ HA17904FPK Application Car use Package Code (Previous Code) PRDP0008AF-A (DP-8B) PRSP0008DE-B (FP-8DGV) PRSP0008DE-B (FP-8DGV) Rev.1.00 Jun 15, 2005 page 1 of 7 HA17904 Series Pin Arrangement Vout1 1 1 –+ 2 +– 8 VCC Vout2 Vin(–)1 2 7 Vin(+)1 3 6 Vin(–)2 GND 4 5 Vin(+)2 (Top View) Circuit Schematic (1/2) Q5 Vin(–) Q1 Q2 Q3 Q4 Q6 C Q7 R1 Vin(+) Q11 Q10 Q8 Q9 Q12 Q13 Vout Rev.1.00 Jun 15, 2005 page 2 of 7 HA17904 Series Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Output sink current Common-mode input voltage Common-mode differential voltage Power dissipation Operating temperature range Symbol VCC IO sink VCM V IN(diff) PT Topr Ratings HA17904PSJ 32 50 –0.3 to VCC ±VCC 570* –40 to +85 1 HA17904FPJ 32 50 –0.3 to VCC ±VCC 385* –40 to +85 2 HA17904FPK 32 50 –0.3 to VCC ±VCC 385* –40 to +125 2 Unit V mA V V mW °C °C Storage temperature range Tstg –55 to +125 –55 to +125 –55 to +150 Notes: 1. These are the allowable values up to Ta = 55 °C. Derate by 8.3mW/°C above that temperature. 2. These are the allowable values up to Ta = 45 °C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/°C above that temeperature. Electrical Characteristics 1 (VCC = +15V, Ta = 25°C) Item Input offset voltage Input offset current Input bias current Power source rejection ratio Voltage gain Common mode rejection ratio Common mode input voltage range Peak-to-peak output voltage Output source current Output sink current Output sink current Supply current Slew rate Channel separation Symbol VIO IIO IIB PSRR AVD CMR VCM (+) VCM (–) Vop-p Iosource Iosink Iosink ICC SR CS Min — — — — 75 — 13.5 — — 20 10 15 — — — Typ 3 5 30 93 90 80 — — 13.6 40 20 50 0.8 0.2 120 Max 7 50 250 — — — — –0.3 — — — — 2 — — Unit mV nA nA dB dB dB V V V mA mA µA mA V/µs dB Test Conditions VCM = 7.5V, RS = 50Ω, Rf = 50kΩ VCM = 7.5V, IIO = | II (+) – II (–) | VCM = 7.5V RS = 1kΩ, Rf = 100kΩ RL = ∞, RS = 1kΩ, Rf = 100kΩ RS = 50Ω, Rf = 5kΩ RS = 1kΩ, Rf = 100kΩ RS = 1kΩ, Rf = 100kΩ f = 100Hz, RL = 20kΩ, RS = 1kΩ, Rf = 100kΩ VIN = 1V, VIN = 0V, VOH = 10V – + VIN = 1V, VIN = 0V, VOL = 2.5V VIN = 1V, VIN = 0V, Vout = 200mV VIN = GND, RL = ∞ RL = ∞, VCM = 7.5V, f = 1.5kHz f = 1kHz – + + – Electrical Characteristics 2 (VCC = +15V, Ta =–40 to +125°C) Item Input offset voltage Input offset current Input bias current Common mode input voltage range Supply current Symbol VIO IIO IIB VCM ICC Min — — — 0 — Typ — — — — — Max 7 200 500 13.0 4 Unit mV nA nA V mA Test Conditions VCM = 7.5V, RS = 50Ω, RL = 50kΩ VCM = 7.5V, IIO = | II (+) – II (–) | VCM = 7.5V RS = 1kΩ, Rf = 100kΩ VIN = GND, RL = ∞ Note: As for the characteristic curve, refer to HA17904FPK. Rev.1.00 Jun 15, 2005 page 3 of 7 HA17904 Series Characteristic Curves Input Bias Current vs. Power-Supply Voltage Characteristics 100 Ta = 25°C Vin = 7.5 V 75 90 80 Input Bias Current vs. Ambient Temperature Characteristics Input Bias Current IIB (nA) Input Bias Current IIB (nA) 30 70 60 50 40 30 20 10 50 25 0 10 20 0 –55 –35 –15 5 25 45 65 85 105 125 Power-Supply Voltage VCC (V) Ambient Temperature Ta (°C) Output Sink Current vs. Ambient Temperature Characteristics 90 90 Output Source Current vs. Ambient Temperature Characteristics Output Sink Current Io sink (mA) 80 70 60 50 40 30 20 10 0 –55 –35 –15 5 25 45 65 Output Sink Current Io source (mA) VCC = 15 V VOH = 1 V 80 70 60 50 40 30 20 10 0 –55 –35 –15 5 25 45 65 VCC = 15 V VOH = 10 V 85 105 125 85 105 125 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Rev.1.00 Jun 15, 2005 page 4 of 7 HA17904 Series Voltage Gain vs. Frequency Characteristics 160 140 VCC = 15 V Ta = 25°C 160 140 Ta = 25°C Voltage Gain vs. Power-Supply Voltage Characteristics Voltage Gain AVD (dB) 120 100 80 60 40 20 0 1 10 100 1k 10 k 100 k 1M Voltage Gain AVD (dB) 120 100 80 60 40 20 0 10 20 30 Frequency f (Hz) Power-Supply Voltage VCC (V) Maximum Output Voltage Amplitude vs. Frequency Characteristics 20 4 Supply Current vs. Power-Supply Voltage Characteristics Ta = 25°C Vin = GND Maximum Output Voltage Amplitude VOP-P (VP-P) Supply Current ICC (mA) 15 3 10 2 5 1 0 1k 0 10 k 100 k 1M 10 20 30 Frequency f (Hz) Power-Supply Voltage VCC (V) Rev.1.00 Jun 15, 2005 page 5 of 7 HA17904 Series Slew Rate vs. Power-Supply Voltage Characteristics 0.8 V1 = V2 = 1/2 VCC f = 1.5 kHz 120 Common-Mode Rejection Ratio vs. Frequency Characteristics Slew Rate SR (V/µs) 0.6 Common-Mode Rejection Ratio CMR (dB) 100 80 60 40 20 0 100 VCC = 15 V Ta = 25°C RS = 50 Ω 0.4 0.2 0 10 20 30 1k 10 k 100 k 1M Power-Supply Voltage VCC (V) Frequency f (Hz) Rev.1.00 Jun 15, 2005 page 6 of 7 HA17904 Series Package Dimensions JEITA Package Code P-DIP8-6.3x9.6-2.54 RENESAS Code PRDP0008AF-A Previous Code DP-8B MASS[Typ.] 0.51g D 8 5 1 0.89 b3 4 Z Dimension in Millimeters Min Nom 7.62 9.6 6.3 10.6 7.4 5.06 0.5 0.38 0.48 1.3 0.20 0° 2.29 2.54 0.25 0.35 15° 2.79 1.27 2.54 0.58 Max E Reference Symbol e1 A A1 D E A L A1 bp b3 e bp θ e1 c c θ e Z L JEITA Package Code P-SOP8-4.4x4.85-1.27 RENESAS Code PRSP0008DE-B Previous Code FP-8DGV MASS[Typ.] 0.1g *1 D 5 F NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 8 bp *2 HE E c Reference Symbol Dimension in Millimeters Min Nom 4.85 4.4 Max 5.25 Index mark Terminal cross section ( Ni/Pd/Au plating ) 1 Z e 4 *3 D E A2 bp A1 x M L1 A bp b1 c c1 0.00 0.1 0.20 2.03 0.35 0.4 0.45 0.15 0.20 0.25 θ HE 0° 6.35 6.5 1.27 8° 6.75 A θ A1 L e x y 0.12 0.15 0.75 0.42 1 y Detail F Z L L 0.60 1.05 0.85 Rev.1.00 Jun 15, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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