HAT2268C

HAT2268C Silicon N Channel MOS FET Power Switching REJ03G1354-0200 Rev.2.00 Feb 28, 2006 Features • Low on-resistance RDS(on) = 27 mΩ typ. (at VGS = 10 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2345 DD DD 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Ratings 30 +20 / –10 4 16 4 900 150 –55 to +150 Unit V V A A A W °C °C Rev.2.00 Feb 28, 2006 page 1 of 6 HAT2268C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 30 +20 –10 — — 1.0 — — 5.5 — — — — — — — — — — — Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 IG = ±10 µA, VDS = 0 VGS = +16 / -8 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 2 A, VGS = 10 VNote3 ID = 2 A, VGS = 4.5 VNote3 ID = 2 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 2 A, VGS = 10 V, VDD = 10 V, RL = 5 Ω , Rg = 4.7 Ω VDD = 10 V, VGS = 10 V ID = 4 A IF = 4 A, VGS = 0 Note3 — — — 27 37 8.5 440 110 45 15 50 45 7 8 1.5 1.3 0.85 ±10 1 2.0 34 54 — — — — — — — — — — — 1.15 µA µA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V Rev.2.00 Feb 28, 2006 page 2 of 6 HAT2268C Main Characteristics Power vs. Temperature Derating 1.6 Maximum Safe Operation Area 100 Ta = 25°C, 1shot pulse When using the FR4 board. PW Pch (W) Drain Current ID (A) Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), Ta = 25°C 10 µs 10 1.2 10 1 m 0µ = s s Channel Dissipation 1 DC 10 op m 0.8 er s at ion 0.1 0.4 0.01 Operation in this area is limited by RDS(on) 0 50 100 150 200 0.001 0.01 0.1 1 10 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 20 4.0 V Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 3.5 V 12 3.3 V 8 3.0 V 4 VGS = 2.7 V Pulse Test 0 2 4 6 8 10 Drain Current ID (A) 16 5.0 V 4.3 V 3.7 V 16 12 8 Tc = 75°C 25°C 0 1 2 –25°C 3 4 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Voltage VDS(on) (mV) Drain to Source On State Resistance RDS(on) (mΩ) 400 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 100 4.5 V VGS = 10 V 10 300 200 4A 100 ID = 1 A 0 2A Pulse Test 1 0.1 1 10 100 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Feb 28, 2006 page 3 of 6 HAT2268C Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance |yfs| (S) 100 80 100 Tc = –25°C 30 10 3 1 0.3 0.1 0.1 25°C 60 4.5 V 40 1, 2, 4 A 75°C ID = 1, 2, 4 A 20 0 –25 VGS = 10 V Pulse Test 0 25 50 75 100 125 150 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current ID (A) Dynamic Input Characteristics Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) ID = 4 A 60 VDD = 30 V 20 V 10 V Gate to Source Voltage VGS (V) 80 16 1000 Ciss 12 Capacitance C (pF) 300 40 VDD 20 VGS 8 100 Coss Crss 30 VGS = 0 f = 1 MHz 10 0 5 10 15 20 25 30 4 VDD = 30 V 20 V 10 V 0 2 4 6 8 0 10 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 20 1000 Switching Characteristics tr Reverse Drain Current IDR (A) 16 Switching Time t (ns) 100 tf 10 tr td(off) td(on) tf VGS = 10 V, VDD = 10 V RG = 4.5 Ω, RL = 5 Ω 0.3 1 3 10 30 100 12 4.5 V 8 10 V 4 Pulse Test VGS = 0 V 0 0.4 0.8 1.2 1.6 2.0 1 0.1 Source to Drain Voltage VSD (V) Drain Current ID (A) Rev.2.00 Feb 28, 2006 page 4 of 6 HAT2268C Switching Time Test Circuit Waveform Vin Monitor D.U.T. RL 4.7 Ω Vin 10 V Vout Monitor Vin Vout VDD = 10 V 10% 10% 90% 10% 90% td(on) tr 90% td(off) tf Rev.2.00 Feb 28, 2006 page 5 of 6 HAT2268C Package Dimensions Package Name CMFPAK-6 JEITA Package Code  RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D e A c LP E HE A xM A SA b L Reference Symbol Dimension in Millimeters e A2 A yS A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas c A-A Section A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 1.65 Ordering Information Part Name HAT2268C-EL-E Quantity 3000 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Feb 28, 2006 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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