HN27C256HG Series
32768-word × 8-bit CMOS UV Erasable and Programmable ROM
Maintenance only
Description
The Hitachi HN27C256HG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring
sub-100-ns access times. The HN27C256HG realizes access time of 70 ns and 85 ns, employing the
advanced fine process and high speed circuitry technique. The timing conditions such as access time or
output hold time are designed as same as our byte-wide SRAMs’, allowing to use with SRAMs on the same
memory board by the same read timings. So its board design in 16-bit microprocessor systems is easy. Also,
the HN27C256HG realizes faster programming time than our conventional 256-kbit EPROM by Hitachi’s
Fast High-Reliability Programming Algorithm. Pin arrangement, pin configuration and programming voltage
are compatible with our 256-kbit EPROM series, therefore existing programmers can be used with the
HN27C256HG.
Features
• High speed: Access time 70/85 ns (max)
• Low power dissipation
Active mode: 30 mW (typ) (f = 1 MHz)
• High reliability and fast programming
Programming voltage: +12.5 V DC
Fast High-Reliability Programming Algorithm available
• Device identifier mode
Manufacturer code and device code
Ordering Information
Type No.
Access Time
Package
HN27C256HG-70
HN27C256HG-85
70 ns
85 ns
600-mil 28-pin cerdip (DG-28)
Note: This device is not available for new application.
HN27C256HG Series
Pin Arrangement
VPP
1
28
VCC
A12
2
27
A14
A7
3
26
A13
A6
4
25
A8
A5
5
24
A9
A4
6
23
A11
A3
7
22
OE
A2
8
21
A10
A1
9
20
CE
A0
10
19
I/O7
I/O0
11
18
I/O6
I/O1
12
17
I/O5
I/O2
13
16
I/O4
VSS
14
15
I/O3
(Top View)
Pin Description
Pin Name
Function
A0 – A14
Address
I/O0 – I/O7
Input/output
CE
Chip enable
OE
Output enable
VCC
Power supply
VPP
Programming power supply
VSS
Ground
2
HN27C256HG Series
X-Decoder
Block Diagram
A4 – A9
A12 – A14
512 × 512
Memory Matrix
Address
Input Data
Control
I/O0
I/O7
Y-Gating
Y-Decoder
CE
A0 – A3
A10, A11
OE
VCC
VPP
H
H
: High Threshold Inverter
VSS
3
HN27C256HG Series
Mode Selection
Mode
CE
(20)
OE
(22)
A9
(24)
VPP
(1)
VCC
(28)
I/O
(11 – 13, 15 – 19)
Read
VIL
VIL
X
VCC
VCC
Dout
Output disable
VIL
VIH
X
VCC
VCC
High-Z
Standby
VIH
X
X
VCC
VCC
High-Z
Program
VIL
VIH
X
VPP
VCC
Din
Program verify
VIH
VIL
X
VPP
VCC
Dout
Optional verify
VIL
VIL
X
VPP
VCC
Dout
Program inhibit
VIH
VIH
X
VPP
VCC
High-Z
VCC
VCC
Code
Identifier
VIL
VIL
VH
*2
Notes: 1. X : Don’t care.
2. VH : 12.0 V ± 0.5 V.
Absolute Maximum Ratings
Parameter
Symbol
All input and output voltage
A9 input voltage
*1
Value
Vin, Vout
*1
Unit
*2
V
*2
–0.6 to +7.0
VID
–0.6 to +13.5
V
VPP voltage
*1
VPP
–0.6 to +13.5
V
VCC voltage
*1
VCC
–0.6 to +7.0
V
Operating temperature range
Topr
0 to +70
°C
Storage temperature range
Tstg
–65 to +125
°C
Storage temperature range under bias
Tbias
–10 to +80
°C
Notes: 1. Relative to VSS .
2. Vin, Vout, V ID min = –1.0 V for pulse width ≤ 50 ns.
Capacitance (Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
Cin
—
4
8
pF
Vin = 0 V
Output capacitance
Cout
—
8
12
pF
Vout = 0 V
4
HN27C256HG Series
Read Operation
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VPP = VCC )
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input leakage current
I LI
—
—
2
µA
Vin = 0 V to VCC
Output leakage current
I LO
—
—
2
µA
Vout = 0 V to VCC
VPP current
I PP1
—
1
100
µA
VPP = 5.5 V
Standby V CC current
I SB
—
—
15
mA
CE = VIH
Operating VCC current
I CC1
—
—
30
mA
CE = VIL, Iout = 0 mA
I CC2
—
—
50
mA
f = 15 MHz, Iout = 0 mA
I CC3
—
5
15
mA
f = 1 MHz, Iout = 0 mA
—
0.8
Input low voltage
*3
*3
VIL
–0.3
*1
V
*2
Input high voltage
VIH
2.2
—
VCC + 1.0
V
Output low voltage
VOL
—
—
0.45
V
I OL = 2.1 mA
Output high voltage
VOH1
2.4
—
—
V
I OH = –1.0 mA
VOH2
VCC – 0.7
—
—
V
I OH = –100 µA
Notes: 1. VIL min = –1.0 V for pulse width ≤ 50 ns.
2. VIH max = VCC + 1.5 V for pulse width ≤ 20 ns.
If V IH is over the specified maximum value, read operation cannot be guaranteed.
3. Only defined for DC function test. V IL max = 0.45 V, VIH min = 2.4 V for AC function test.
5
HN27C256HG Series
AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VPP = VCC)
Test Conditions
•
•
•
•
Input pulse levels: 0.45 V to 2.4 V
Input rise and fall time: ≤ 10 ns
Output load: 1TTL gate + 100 pF
Reference levels for measuring timing: Inputs; 1.5 V
Outputs; 1.5 V
HN27C256HG
-70
-85
Parameter
Symbol Min
Max
Min
Max
Unit
Test Conditions
Address to output delay
t ACC
—
70
—
85
ns
CE = OE = VIL
CE to output delay
t CE
—
70
—
85
ns
OE = VIL
OE to output delay
t OE
—
40
—
45
ns
CE = VIL
OE high to output float
t DF
0
30
0
30
ns
CE = VIL
Address to output hold
t OH
5
—
5
—
ns
CE = OE = VIL
Note: t DF is defined as the time at which the output achieves the open circuit condition and data is no longer
driven.
Read Timing Waveform
Address
CE
Standby Mode
Active Mode
Standby Mode
tCE
OE
tOE
tACC
Data Out
6
tDF
tOH
Data Out Valid
HN27C256HG Series
Fast High-Reliability Programming
This device can be applied the Fast High-Reliability Programming Algorithm shown in following flowchart.
This algorithm offers both faster programming time and high reliability data retension. A theoretical
programming time (except brank checking and verifying time) is one-tenth of conventional high performance
programming algorithm’s. Regarding the model and software version of the programmers available this
algorithm, please contact programmer maker.
START
SET PROG./VERIFY MODE
VPP = 12.5 ± 0.5 V, VCC = 6.0 ± 0.25 V
Address = 0
n=0
n+1
n
Program tPW = 0.2 ms ± 5%
Address + 1
VERIFY
Address
NOGO
GO
Program tOPW = 0.2n ms
n = 25
NO
YES
NO
LAST
Address?
YES
SET READ MODE
VCC = 5.0 V ± 0.5 V, VPP = VCC
READ
All Address
NOGO
GO
END
FAIL
7
HN27C256HG Series
DC Characteristics (Ta = 25°C ± 5°C, VCC = 6 V ± 0.25 V, VPP = 12.5 V ± 0.5 V)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input leakage current
I LI
—
—
2
µA
Vin = 0 V to VCC
VPP supply current
I PP
—
—
30
mA
CE = VIL
Operating VCC current
I CC
—
—
30
mA
—
0.8
Input low level
VIL
–0.1
*5
V
*6
Input high level
VIH
2.2
—
VCC + 0.5
V
Output low voltage during verify
VOL
—
—
0.45
V
I OL = 2.1 mA
Output high voltage during verify
VOH
2.4
—
—
V
I OH = –400 µA
Notes: 1. VCC must be applied simultaneously or before VPP and removed simultaneously or after V PP .
2. VPP must not exceed 13.5 V including overshoot.
3. An influence may be had upon device reliability if the device is installed or removed while VPP = 12.
5V.
4. Do not alter VPP either V IL to 12.5 V or 12.5 V to VIL when CE = Low.
5. VIL min = –0.6 V for pulse width ≤ 20 ns.
6. If V IH is over the specified maximum value, programming operation cannot be guaranteed.
8
HN27C256HG Series
AC Characteristics (Ta = 25°C ± 5°C, VCC = 6 V ± 0.25 V, VPP = 12.5 V ± 0.5 V)
Test Conditions
• Input pulse levels: 0.45 V to 2.4 V
• Input rise and fall time: ≤ 20 ns
• Reference levels for measuring timing: Inputs; 0.8 V and 2.0 V
Outputs; 0.8 V and 2.0 V
Parameter
Symbol
Min
Typ
Max
Unit
Address setup time
t AS
2
—
—
µs
OE setup time
t OES
2
—
—
µs
Data setup time
t DS
2
—
—
µs
Address hold time
t AH
0
—
—
µs
Data hold time
t DH
2
—
—
µs
VPP setup time
t VPS
2
—
—
µs
VCC setup time
t VCS
2
—
—
µs
0.19
0.20
0.21
ms
0.19
—
5.25
ms
0
—
150
ns
—
—
130
ns
CE initial programming pulse width t PW
CE over programming pulse width
t OPW
Data valid from OE
t OE
OE to output float delay
t DF
*2
*1
Test Conditions
Notes: 1. Refer to the Fast High-Reliability Programming Flowchart for tOPW.
2. t DF is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
9
HN27C256HG Series
Fast High-Reliability Programming Timing Waveform
Program
Program Verify
Address
tAH
tAS
Data In Stable
Data
tDH
tDS
VPP
VCC
Data Out Valid
tDF
VPP
VCC
tVPS
VCC + 1
VCC
tVCS
CE
tPW
OE
10
tOES
tOE
HN27C256HG Series
High Performance Programming
This device can be applied the high performance programming algorithm shown in following flowchart. This
algorithm is as same as our 256-kbit EPROM series, so existing programmers can be used with this device.
This algorithm allows to obtain faster programming time without any voltage stress to the device nor
deterioration in reliability of programmed data.
START
SET PROG./VERIFY MODE
VPP = 12.5 ± 0.5 V, VCC = 6.0 ± 0.25 V
Address = 0
n=0
n+1
n
Program tPW = 1.0 ms ± 5%
Address + 1
VERIFY
Address
NOGO
GO
Program tOPW = 3n ms
n = 25
NO
YES
NO
LAST
Address?
YES
SET READ MODE
VCC = 5.0 V ± 0.5 V, VPP = VCC
READ
All Address
NOGO
GO
END
FAIL
11
HN27C256HG Series
DC Characteristics (Ta = 25°C ± 5°C, VCC = 6 V ± 0.25 V, VPP = 12.5 V ± 0.5 V)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input leakage current
I LI
—
—
2
µA
Vin = 0 V to VCC
VPP supply current
I PP
—
—
30
mA
CE = VIL
Operating VCC current
I CC
—
—
30
mA
—
0.8
Input low level
VIL
–0.1
*5
V
*6
Input high level
VIH
2.2
—
VCC + 0.5
V
Output low voltage during verify
VOL
—
—
0.45
V
I OL = 2.1 mA
Output high voltage during verify
VOH
2.4
—
—
V
I OH = –400 µA
Notes: 1. VCC must be applied simultaneously or before VPP and removed simultaneously or after V PP .
2. VPP must not exceed 13.5 V including overshoot.
3. An influence may be had upon device reliability if the device is installed or removed while VPP = 12.
5V.
4. Do not alter VPP either V IL to 12.5 V or 12.5 V to VIL when CE = Low.
5. VIL min = –0.6 V for pulse width ≤ 20 ns.
6. If V IH is over the specified maximum value, programming operation cannot be guaranteed.
12
HN27C256HG Series
AC Characteristics (Ta = 25°C ± 5°C, VCC = 6 V ± 0.25 V, VPP = 12.5 V ± 0.5 V)
Test Conditions
• Input pulse levels: 0.45 V to 2.4 V
• Input rise and fall time: ≤ 20 ns
• Reference levels for measuring timing: Inputs; 1.5 V
Outputs; 1.5 V
Parameter
Symbol
Min
Typ
Max
Unit
Address setup time
t AS
2
—
—
µs
OE setup time
t OES
2
—
—
µs
Data setup time
t DS
2
—
—
µs
Address hold time
t AH
0
—
—
µs
Data hold time
t DH
2
—
—
µs
VPP setup time
t VPS
2
—
—
µs
VCC setup time
t VCS
2
—
—
µs
0.95
1.0
1.05
ms
2.85
—
78.75
ms
0
—
150
ns
—
—
130
ns
CE initial programming pulse width t PW
CE over programming pulse width
t OPW
Data valid from OE
t OE
OE to output float delay
t DF
*2
*1
Test Conditions
Notes: 1. Refer to the high performance programming flowchart for t OPW.
2. t DF is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
13
HN27C256HG Series
High Performance Programming Timing Waveform
Program
Program Verify
Address
tAH
tAS
Data In Stable
Data
Data Out Valid
tDH
tDS
tDF
VPP
VCC
VPP
tVPS
VCC + 1
VCC
VCC
tVCS
CE
tPW
tOES
tOE
OE
Erase
Erasure of HN27C256HG is performed by exposure to ultraviolet light of 2537 Å and all the output data are
changed to “1” after this erasure procedure. The minimum integrated dose (i.e. UV intensity × exposure time)
for erasure is 15 W · sec/cm2.
Mode Description
Device Identifier Mode
Programming condition of EPROM is various according to EPROM manufacturers and device types. It may
cause miss operation. To countermeasure it, some EPROMs provide maker identifier code. Users can write
EPROM by reading out write condition coded before shipped. Some commercial programmers can set write
condition by recognizing this code. This function enables effective program. Regarding commercial
programmers that can recognize this device’s identifier code, please contact programmer maker.
14
HN27C256HG Series
HN27C256HG Series Identifier Code
Identifier
A0
(10)
I/O7
(19)
I/O6
(18)
I/O5
(17)
I/O4
(16)
I/O3
(15)
I/O2
(13)
I/O1
(12)
I/O0
(11)
Hex Data
Manufacturer code
VIL
0
0
0
0
0
1
1
1
07
Device code
VIH
0
0
1
1
0
0
0
1
31
Notes: 1. A9 = 12.0 V ± 0.5 V.
2. A1 – A8, A10 – A14, CE, OE = VIL.
Electric Characteristics Curves
Supply Current ICC2 (Normalized)
Supply Current vs. Supply Voltage
Ta = 25°C
f = 15 MHz
2.0
1.5
1.0
0.5
0
4
5
6
Supply Voltage VCC (V)
15
HN27C256HG Series
Supply Current ICC2 (Normalized)
Supply Current vs. Ambient Temperatrure
VCC = 5 V
f = 15 MHz
2.0
1.5
1.0
0.5
Supply Current ICC2 (Normalized)
0
16
20
60
0
40
80
Ambient Temperature Ta (°C)
Supply Current – Frequency
2.0
Ta = 25°C
VCC = 5 V
1.5
1.0
0.5
0
10
5
Frequency f (MHz)
15
HN27C256HG Series
Access Time tOE (Normalized)
Access Time – Supply Voltage
2.0
1.5
1.0
0.5
0
4
5
6
Supply Voltage VCC (V)
Access Time tACC (Normalized)
Access Time – Supply Voltage
Ta = 25°C
2.0
1.5
1.0
0.5
0
4
5
6
Supply Voltage VCC (V)
17
HN27C256HG Series
Access Time tACC (Normalized)
Access Time – Ambient Temperature
VCC = 5 V
2.0
1.5
1.0
0.5
0
20
60
0
40
80
Ambient Temperature Ta (°C)
Output Voltage VOL (Normalized)
Output Voltage vs. Ooutput Current
2.0
1.5
1.0
0.5
0
18
Ta = 25°C
VCC = 5 V
0
1
3
2
4
Output Current IOH (mA)
HN27C256HG Series
Output Voltage VOH (Normalized)
Output Voltage vs. Output Current
Ta = 25°C
VCC = 5 V
2.0
1.5
1.0
0.5
0
0
–0.5
–1.0 –1.5 –2.0
Output Current IOH (mA)
Standby Current ISB (Normalized)
Standby Current vs. Supply Voltage
Ta = 25°C
2.0
1.5
1.0
0.5
0
4
5
6
Supply Voltage VCC (V)
19
HN27C256HG Series
Standby Current ISB (Normalized)
Standby Current vs. Ambient Temperature
VCC = 5 V
2.0
1.5
1.0
0.5
0
0
20
40
60
80
Ambient Temperature Ta (°C)
20
HN27C256HG Series
Package Dimensions
HN27C256HG Series (DG-28)
Unit: mm
36.83
38.10 Max
28
14.66
15.51 Max
15
.89
φ8
1
1.32
14
15.24
2.54 ± 0.25
0.48 ± 0.10
2.54 Min 5.89 Max
0.38 Min
2.54 Max
+ 0.11
0.25 – 0.05
0 – 15°
21
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