HN58X25128FPIAG#S0

Preliminary Datasheet R1EX25032ASA00I/R1EX25032ATA00I R1EX25064ASA00I/R1EX25064ATA00I Serial Peripheral Interface 32k EEPROM (4-kword × 8-bit) 64k EEPROM (8-kword × 8-bit) R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Description R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte page programming function to make it’s write operation faster. Features • Single supply: 1.8 V to 5.5 V • Serial Peripheral Interface compatible (SPI bus) ⎯ SPI mode 0 (0,0), 3 (1,1) • Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V) • Power dissipation: ⎯ Standby: 2.0 μA (max) ⎯ Active (Read): 3.0 mA (max) ⎯ Active (Write): 3.5 mA (max) • Automatic page write: 32-byte/page • Write cycle time: 5 ms • Endurance: 1,000k or more Cycles @25°C • Data retention: 100 or more Years @25°C • Small size packages: SOP-8pin, TSSOP-8pin • Shipping tape and reel ⎯ TSSOP-8pin : 3,000 IC/reel ⎯ SOP-8pin : 2,500 IC/reel • Temperature range: −40 to +85°C • Lead free product. (#U0, #S0) • Halogen free products. (#U0) Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Renesas Electronics’ Sales Dept. regarding specifications. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 1 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Ordering Information Orderable Part Numbers R1EX25032ASA00I#S0 R1EX25064ASA00I#U0 R1EX25064ASA00I#S0 R1EX25032ATA00I#S0 R1EX25064ATA00I#U0 R1EX25064ATA00I#S0 Internal organization 32k bit (4096 × 8-bit) 64k bit (8192 × 8-bit) 32k bit (4096 × 8-bit) 64k bit (8192 × 8-bit) Package 150 mil 8-pin plastic SOP PRSP0008DF-B (FP-8DBV) Lead free 8-pin plastic TSSOP PTSP0008JC-B (TTP-8DAV) Lead free Halogen free —  — —  — Shipping tape and reel 2,500 IC/reel 3,000 IC/reel Pin Arrangement 8-pin SOP/TSSOP S 1 8 VCC Q 2 7 HOLD W 3 6 C VSS 4 5 D (Top view) Pin Description Pin name C D Q S W HOLD VCC VSS Function Serial clock Serial data input Serial data output Chip select Write protect Hold Supply voltage Ground Block Diagram Voltage detector VCC HOLD D Q R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Y decoder C Address generator W Control logic S X decoder High voltage generator VSS Memory array Y-select & Sense amp. Serial-parallel converter Page 2 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Absolute Maximum Ratings Parameter Supply voltage relative to VSS Input voltage relative to VSS Operating temperature range*1 Storage temperature range Symbol VCC Vin Topr Tstg Value −0.6 to + 7.0 −0.5*2 to +7.0 −40 to +85 −55 to +125 Unit V V °C °C Notes: 1. Including electrical characteristics and data retention. 2. Vin (min): −3.0 V for pulse width ≤ 50 ns. DC Operating Conditions Parameter Supply voltage Input voltage Operating temperature range Note: Symbol VCC VSS VIH VIL Topr Min 1.8 0 VCC × 0.7 −0.3*1 −40 Typ ⎯ 0 ⎯ ⎯ ⎯ Max 5.5 0 VCC + 0.5 VCC × 0.3 +85 Unit V V V V °C 1. VIL (min): −1.0 V for pulse width ≤ 50 ns. Capacitance (Ta = +25°C, f = 1 MHz) Parameter Input capacitance (D,C, S, W ,HOLD) Output capacitance (Q) Note: Symbo l Cin*1 CI/O*1 Min Typ Max Unit ⎯ ⎯ ⎯ ⎯ 6.0 8.0 pF pF Test conditions Vin = 0 V Vout = 0 V 1.Not 100% tested. Memory cell characteristics (VCC = 1.8 V to 5.5 V) Endurance Data retention Note: Ta=25°C 1,000k Cycles min. 100 Years min. Ta=85°C 100k Cycles min 10 Years min. Notes 1 1 1. Not 100% tested. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 3 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I DC Characteristics Parameter Input leakage current Symbol ILI Min ⎯ Typ ⎯ Max 2.0 Unit μA Output leakage current ILO ⎯ ⎯ 2.0 μA Standby ISB Active ICC1 ⎯ ⎯ ⎯ 0.5 1.0 0.8 ⎯ 2.0 2.0 μA μA mA ⎯ ⎯ 3.0 mA VCC = 5.5 V, Read at 5 MHz VIN = VCC × 0.1/VCC × 0.9 Q = OPEN ⎯ 1.5 2.0 mA VCC = 3.6 V, Write at 5 MHz VIN = VCC × 0.1/VCC × 0.9 ⎯ ⎯ 3.5 mA VOL1 VOL2 ⎯ ⎯ ⎯ ⎯ 0.4 0.4 V V VCC = 5.5 V, Write at 5 MHz VIN = VCC × 0.1/VCC × 0.9 VCC = 5.5 V, IOL = 2 mA VCC = 2.5 V, IOL = 1.5 mA VOH1 VCC × 0.8 ⎯ ⎯ V VCC = 5.5 V, IOH = −2 mA VOH2 VCC × 0.8 ⎯ ⎯ V VCC = 2.5 V, IOH = −0.4 mA VCC current ICC2 Output voltage R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Test conditions VCC = 5.5 V, VIN = 0 to 5.5 V (S, D, C, HOLD, W) VCC = 5.5 V, VOUT = 0 to 5.5 V (Q) VIN = VSS or VCC, VCC = 3.6 V VIN = VSS or VCC, VCC = 5.5 V VCC = 3.6 V, Read at 5 MHz VIN = VCC × 0.1/VCC × 0.9 Q = OPEN Page 4 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I AC Characteristics Test Conditions • Input pules levels: ⎯ VIL = VCC × 0.2 ⎯ VIH = VCC × 0.8 • Input rise and fall time: ≤ 10 ns • Input and output timing reference levels: VCC × 0.3, VCC × 0.7 • Output reference levels: VCC × 0.5 • Output load: 100 pF (Ta = −40 to +85°C, VCC = 2.5 V to 5.5 V) Parameter Clock frequency S active setup time S not active setup time S deselect time S active hold time S not active hold time Clock high time Clock low time Symbol fC tSLCH tSHCH tSHSL tCHSH tCHSL tCH tCL Alt fSCK tCSS1 tCSS2 tCS tCSH ⎯ tCLH tCLL Min ⎯ 90 90 90 90 90 90 90 Max 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit MHz ns ns ns ns ns ns ns Notes Clock rise time Clock fall time Data in setup time Data in hold time Clock low hold time after HOLD not active Clock low hold time after HOLD active Clock high setup time before HOLD active tCLCH tCHCL tDVCH tCHDX tHHCH tHLCH tCHHL tCHHH ⎯ ⎯ 20 30 70 40 60 60 1 1 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ μs μs ns ns ns ns ns ns 2 2 Clock high setup time before HOLD not active Output disable time Clock low to output valid Output hold time Output rise time Output fall time HOLD high to output low-Z HOLD low to output high-Z Write time tRC tFC tDSU tDH ⎯ ⎯ ⎯ ⎯ tSHQZ tCLQV tCLQX tQLQH tQHQL tHHQX tHLQZ tW tDIS tV tHO tRO tFO tLZ tHZ tWC ⎯ ⎯ 0 ⎯ ⎯ ⎯ ⎯ ⎯ 100 70 ⎯ 50 50 50 100 5 ns ns ns ns ns ns ns ms 2 1 1 2 2 2 2 Notes: 1. tCH + tCL ≥ 1/fC 2. Not 100% tested. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 5 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I (Ta = −40 to +85°C, VCC = 1.8 V to 5.5 V) Parameter Clock frequency S active setup time S not active setup time S deselect time S active hold time S not active hold time Clock high time Clock low time Clock rise time Clock fall time Data in setup time Data in hold time Clock low hold time after HOLD not active Clock low hold time after HOLD active Clock high setup time before HOLD active Symbol fC tSLCH tSHCH tSHSL tCHSH tCHSL tCH tCL tCLCH tCHCL tDVCH tCHDX tHHCH tHLCH tCHHL Clock high setup time before HOLD not active Output disable time tCHHH Alt fSCK tCSS1 tCSS2 tCS tCSH ⎯ tCLH tCLL tRC tFC tDSU tDH ⎯ ⎯ ⎯ ⎯ tSHQZ tDIS ⎯ 200 ns Clock low to output valid Output hold time Output rise time Output fall time HOLD high to output low-Z HOLD low to output high-Z Write time tCLQV tCLQX tQLQH tQHQL tHHQX tHLQZ tW tV ⎯ 0 ⎯ ⎯ ⎯ ⎯ ⎯ 120 ⎯ 100 100 100 100 5 ns ns ns ns ns ns ms tHO tRO tFO tLZ tHZ tWC Min ⎯ 100 100 150 100 100 150 150 ⎯ ⎯ 30 50 140 90 120 120 Max 3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 1 — ⎯ ⎯ ⎯ ⎯ ⎯ Unit MHz ns ns ns ns ns ns ns μs μs ns ns ns ns ns ns Notes 2 1 1 2 2 2 2 2 2 Notes: 1. tCH + tCL ≥ 1/fC 2. Not 100% tested. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 6 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Timing Waveforms Serial Input Timing tSHSL S tCHSL tCHSH tSHCH tSLCH C tDVCH D tCHCL tCLCH tCHDX MSB IN LSB IN High Impedance Q Hold Timing S tHHCH tHLCH tCHHL C tCHHH D tHLQZ tHHQX Q HOLD Output Timing S tSHQZ tCH C tCL D ADDR LSB IN tCLQV tCLQX Q tCLQX tCLQV LSB OUT tQLQH tQHQL R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 7 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Pin Function Serial data output (Q) This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of serial clock (C). Serial data input (D) This input signal is used to transfer data serially into the device. It receives instructions, addresses, and the data to be written. Values are latched on the rising edge of serial clock (C). Serial clock (C) This input signal provides the timing of the serial interface. Instructions, addresses, or data present at serial data input (D) are latched on the rising edge of serial clock (C). Data on serial data output (Q) changes after the falling edge of serial clock (C). Chip select (S) When this input signal is high, the device is deselected and serial data output (Q) is at high impedance. Unless an internal write cycle is in progress, the device will be in the standby mode. Driving chip select (S) low enables the device, placing it in the active power mode. After power-up, a falling edge on chip select (S) is required prior to the start of any instruction. Hold (HOLD) The hold (HOLD) signal is used to pause any serial communications with the device without deselecting the device. During the hold condition, the serial data output (Q) is high impedance, and serial data input (D) and serial clock (C) are don’t care. To start the hold condition, the device must be selected, with chip select (S) driven low. Write protect (W) The main purpose of this input signal is to freeze the size of the area of memory that is protected against write instructions (as specified by the values in the BP1 and BP0 bits of the status register). This pin must be driven either high or low, and must be stable during all write operations. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 8 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Functional Description Status Register The following figure shows the Status Register Format. The Status Register contains a number of status and control bits that can be read or set (as appropriate) by specific instructions. Status Register Format b7 SRWD b0 0 0 0 BP1 BP0 WEL WIP Status Register Write Disable Block Protect Bits Write Enable Latch Bits Write In Progress Bits WIP bit: The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write Status Register cycle. WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. BP1, BP0 bits: The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be software protected against Write instructions. SRWD bit: The Status Register Write Disable (SRWD) bit is operated in conjunction with the write protect (W) signal. The Status Register Write Disable (SRWD) bit and write protect (W) signal allow the device to be put in the Hardware Protected mode. In this mode, the non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits. Instructions Each instruction starts with a single-byte code, as summarized in the following table. If an invalid instruction is sent (one not contained in the following table), the device automatically deselects itself. Instruction Set Instruction Description WREN WRDI RDSR WRSR READ Write Enable Write Disable Read Status Register Write Status Register Read from Memory Array WRITE Write to Memory Array R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Instruction Format 0000 0110 0000 0100 0000 0101 0000 0001 0000 0011 0000 0010 Page 9 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Write Enable (WREN): The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction. The only way to do this is to send a Write Enable instruction to the device. As shown in the following figure, to send this instruction to the device, chip select (S) is driven low, and the bits of the instruction byte are shifted in, on serial data input (D). The device then enters a wait state. It waits for the device to be deselected, by chip select (S) being driven high. Write Enable (WREN) Sequence S W VIH VIL VIH VIL 0 C 1 2 3 4 5 6 7 VIH VIL Instruction VIH D Q R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 VIL High-Z Page 10 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Write Disable (WRDI): One way of resetting the Write Enable Latch (WEL) bit is to send a Write Disable instruction to the device. As shown in the following figure, to send this instruction to the device, chip select (S) is driven low, and the bits of the instruction byte are shifted in, on serial data input (D). The device then enters a wait state. It waits for the device to be deselected, by chip select (S) being driven high. The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events: ⎯ ⎯ ⎯ ⎯ Power-up WRDI instruction execution WRSR instruction completion WRITE instruction completion Write Disable (WRDI) Sequence S W VIH VIL VIH VIL 0 C 1 2 3 4 5 6 7 VIH VIL Instruction VIH D Q R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 VIL High-Z Page 11 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Read Status Register (RDSR): The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register may be read at any time, even while a Write or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register continuously, as shown in the following figure. Read Status Register (RDSR) Sequence S W VIH VIL VIH VIL 0 C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VIH VIL VIH D VIL Status Register Out Q High-Z 7 6 5 4 3 2 1 0 7 The status and control bits of the Status Register are as follows: WIP bit: The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write Status Register cycle. When set to 1, such a cycle is in progress. When reset to 0, no such cycles are in progress. WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1, the internal Write Enable Latch is set. When set to 0, the internal Write Enable Latch is reset and no Write or Write Status Register instructions are accepted. BP1, BP0 bits: The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be software protected against Write instructions. These bits are written with the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits are set to 1, the relevant memory area (as defined in the Status Register Format table) becomes protected against Write (WRITE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. SRWD bit: The Status Register Write Disable (SRWD) bit is operated in conjunction with the write protect (W) signal. The Status Register Write Disable (SRWD) bit and write protect (W) signal allows the device to be put in the Hardware Protected mode (When the Status Register Write Disable (SRWD) bit is set to 1, and write protect (W) signal is driven low). In this mode, the non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the Write Status Register (WRSR) instruction is no longer accepted for execution. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 12 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Write Status Register (WRSR): The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write Enable Latch(WEL). The instruction sequence is shown in the following figure. The Write Status Register (WRSR) instruction has no effect on b6, b5, b4, b1 and b0 of the Status Register. b6, b5 and b4 are always read as 0. Chip select (S) must be driven high after the rising edge of serial clock (C) that latches in the eighth bit of the data byte, and before the next rising edge of serial clock (C). Otherwise, the Write Status Register (WRSR) instruction is not executed. As soon as chip select (S) is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, Write Enable Latch (WEL) is reset. The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect (BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in the Status Register Format table. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the write protect (W) signal. The Status Register Write Disable (SRWD) bit and write protect (W) signal allows the device to be put in the Hardware Protected Mode (HPM). The Write Status Register (WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is entered. The contents of the Status Register Write Disable (SRWD) and Block Protect (BP1, BP0) bits are frozen at their current values just before the start of the execution of the Write Status Register (WRSR) instruction. The new, updated values take effect at the moment of completion of the execution of Write Status Register (WRSR) instruction. Write Status Register (WRSR) Sequence S W VIH VIL VIH VIL 0 C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VIH VIL Status Register In VIH D VIL Q R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 7 6 5 4 3 2 1 0 MSB High-Z Page 13 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Read from Memory Array (READ): As shown in the following figure, to send this instruction to the device, chip select (S) is first driven low. The bits of the instruction byte and the address bytes are then shifted in, on serial data input (D). The addresses are loaded into an internal address register, and the byte of data at that address is shifted out, on serial data output (Q). If chip select (S) continues to be driven low, the internal address register is automatically incremented, and the byte of data at the new address is shifted out. When the highest address is reached, the address counter rolls over to zero, allowing the Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a single READ instruction. The Read cycle is terminated by driving chip select (S) high. The rising edge of the chip select (S) signal can occur at any time during the cycle. The addressed first byte can be any byte within any page. The instruction is not accepted, and is not executed, if a Write cycle is currently in progress. Read from Memory Array (READ) Sequence S W C VIH VIL VIH VIL 0 VIH 1 2 3 4 5 6 8 7 20 21 22 23 24 25 26 27 28 29 30 31 VIL Instruction 16-Bit Address VIH D 9 10 A15 A14 A13 A3 A2 A1 A0 VIL Data Out 1 Q Note: Data Out 2 High-Z 7 6 5 4 3 2 1 0 7 1. Depending on the memory size, as shown in the following table, the most significant address bits are don’t care. Address Range Bits Device Address bits R1EX25064A A12 to A0 R1EX25032A A11 to A0 Notes: 1. b15-b13 are don’t care on the R1EX25064A 2. b15-b12 are don’t care on the R1EX25032A R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 14 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Write to Memory Array (WRITE): As shown in the following figure, to send this instruction to the device, chip select (S) is first driven low. The bits of the instruction byte, address byte, and at least one data byte are then shifted in, on serial data input (D). The instruction is terminated by driving chip select (S) high at a byte boundary of the input data. In the case of the following figure, this occurs after the eighth bit of the data byte has been latched in, indicating that the instruction is being used to write a single byte. The self-timed Write cycle starts, and continues for a period tWC (as specified in AC Characteristics). At the end of the cycle, the Write In Progress (WIP) bit is reset to 0. If, though, chip select (S) continues to be driven low, as shown in the following figure, the next byte of the input data is shifted in, so that more than a single byte, starting from the given address towards the end of the same page, can be written in a single internal Write cycle. Each time a new data byte is shifted in, the least significant bits of the internal address counter are incremented. If the number of data bytes sent to the device exceeds the page boundary, the internal address counter rolls over to the beginning of the page, and the previous data there are overwritten with the incoming data. (The page size of these device is 32 bytes). The instruction is not accepted, and is not executed, under the following conditions: ⎯ If the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable instruction just before) ⎯ If a Write cycle is already in progress ⎯ If the addressed page is in the region protected by the Block Protect (BP1 and BP0) bits. Byte Write (WRITE) Sequence (1 Byte) S W C VIH VIL VIH VIL VIH 0 1 2 3 4 VIH 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31 16-Bit Address 15 14 13 3 2 Data Byte 1 1 0 7 6 5 4 3 2 1 0 VIL Q Note: 6 VIL Instruction D 5 High-Z 1. Depending on the memory size, as shown in Address Range Bits table, the most significant address bits are don’t care. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 15 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Byte Write (WRITE) Sequence (Page) S W C VIH VIL VIH VIL 0 VIH 1 2 3 4 5 6 7 8 9 16-Bit Address VIH 15 14 13 W C 1 0 7 6 5 4 3 2 1 1 0 0 VIH VIL VIH VIL VIH 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 VIL 7 6 Q Note: 2 High-Z Data Byte 2 D 3 Data Byte 1 VIL Q S 20 21 22 23 24 25 26 27 28 29 30 31 VIL Instruction D 10 5 4 3 2 Data Byte 3 1 0 7 6 5 4 3 2 Data Byte N 1 0 6 5 4 3 2 High-Z 1. Depending on the memory size, as shown in Address Range Bits table, the most significant address bits are don’t care. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 16 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Data Protect The protection features of the device are summarized in the following table. When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial delivery state), it is possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless weather write protect (W) is driven high or low. When the Status Register Write Disable (SRWD) bit of the Status Register is set to 1, two cases need to be considered, depending on the state of write protect (W): ⎯ If write protect (W) is driven high, it is possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction. ⎯ If write protect (W) is driven low, it is not possible to write to the Status Register even if the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction. (Attempts to write to the Status Register are rejected, and are not accepted for execution). As a consequence, all the data bytes in the memory area that are software protected (SPM) by the Block Protect (BP1, BP0) bits of the Status Register, are also hardware protected against data modification. Regardless of the order of the two events, the Hardware Protected Mode (HPM) can be entered: ⎯ By setting the Status Register Write Disable (SRWD) bit after driving write protect (W) low. ⎯ By driving write protect (W) low after setting the Status Register Write Disable (SRWD) bit. The only way to exit the Hardware Protected Mode (HPM) once entered is to pull write protect (W) high. If write protect (W) is permanently tied high, the Hardware Protected Mode (HPM) can never be activated, and only the Software Protected Mode (SPM), using the Block Protect (BP1, BP0) bits of the Status Register, can be used. Write Protected Block Size 0 0 1 1 Status register bits BP1 BP0 0 1 0 1 Protected blocks None Upper quarter Upper half Whole memory Array addresses protected R1EX25064A R1EX25032A None None 1800h − 1FFFh 0C00h − 0FFFh 1000h − 1FFFh 0800h − 0FFFh 0000h − 1FFFh 0000h − 0FFFh Protection Modes W signal SRWD bit 1 0 0 0 1 1 0 1 Note: Mode Write protection of the status register Memory protect 1 Protected area* 1 Unprotected area* Software protected (SPM) Status register is writable (if the WREN) instruction has set the WEL bit). The values in the BP1 and BP0 bits can be changed. Write protected Ready to accept Write instructions Hardware protected (HPM) Status register is hardware write protected. The values in the BP1 and BP0 bits cannot be changed. Write protected Ready to accept Write instructions 1. As defined by the values in the Block Protected (BP1, BP0) bits of the Status Register, as shown in the Write Protected Block Size table. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 17 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Hold Condition The hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. During the hold condition, the serial data output (Q) is high impedance, and serial data input (D) and serial clock (C) are don’t care. To enter the hold condition, the device must be selected, with chip select (S) low. Normally, the device is kept selected, for the whole duration of the hold condition. Deselecting the device while it is in the hold condition, has the effect of resetting the state of the device, and this mechanism can be used if it is required to reset any processes that had been in progress. The hold condition starts when the hold (HOLD) signal is driven low at the same time as serial clock (C) already being low (as shown in the following figure). The hold condition ends when the hold (HOLD) signal is driven high at the same time as serial clock (C) already being low. The following figure also shows what happens if the rising and falling edges are not timed to coincide with serial clock (C) being low. Hold Condition Activation HOLD status HOLD status C HOLD Notes Data Protection at VCC On/Off When VCC is turned on or off, noise on S inputs generated by external circuits (CPU, etc) may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this EEPROM have a power on reset function. Be careful of the notices described below in order for the power on reset function to operate correctly. • S should be fixed to VCC during VCC on/off. Low to high or high to low transition during VCC on/off may cause the trigger for the unintentional programming. • VCC should be turned on/off after the EEPROM is placed in a standby state. • VCC should be turned on from the ground level (VSS) in order for the EEPROM not to enter the unintentional programming mode. • VCC turn on rate should be slower than 2 μs/V. • When WRSR or WRITE instruction is executed before VCC turns off, VCC should be turned off after waiting write cycle time (tW). Power Source Noise Countermeasures In order to suppress power-source-noise which causes malfunction of the device, it is recommended to put 0.1μF bypass-capacitor (such as a monolithic ceramic capacitor which has good high-frequency characteristics) between VCC and VSS, and shorten the wiring length between the capacitor and VCC/VSS terminals as much as possible. Data of shipped sample All bits of EEPROM are logical "1" (FF Hex). Status register (SRWD) & Block Protect bits (BP1, BP0) are "0" status at Shipment. R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 Page 18 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I Package Dimensions R1EX25032ASA00I/R1EX25064ASA00I (PRSP0008DF-B / Previous Code: FP-8DBV) JEITA Package Code P-SOP8-3.9x4.89-1.27 RENESAS Code PRSP0008DF-B *1 Previous Code FP-8DBV D 8 MASS[Typ.] 0.08g NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. F 5 *2 c E HE bp Reference Symbol Index mark Terminal cross section ( Ni/Pd/Au plating ) Dimension in Millimeters Min Nom Max D 4.89 5.15 E 3.90 A2 1 Z 4 e *3 A1 bp x 0.14 L1 0.35 0.40 0.45 0.15 0.20 0.25 6.02 6.20 b1 c A c A1 θ L y Detail F 0.254 1.73 bp 1 θ 0° HE 5.84 8° 1.27 e x 0.25 y 0.10 0.69 Z 0.406 L L R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 0.102 A M 1 0.60 0.889 1.06 Page 19 of 20 R1EX25032ASA00I/R1EX25032ATA00I/R1EX25064ASA00I/R1EX25064ATA00I R1EX25032ATA00I/R1EX25064ATA00I (PTSP0008JC-B / Previous Code: TTP-8DAV) JEITA Package Code P-TSSOP8-4.4x3-0.65 RENESAS Code PTSP0008JC-B *1 D 8 MASS[Typ.] 0.034g Previous Code TTP-8DAV F 5 NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. c HE *2 E bp Reference Symbol Terminal cross section ( Ni/Pd/Au plating ) Dimension in Millimeters Min Nom Max D 3.00 3.30 E 4.40 A2 Index mark A1 0.03 0.07 0.15 0.20 L1 0.10 0.25 0.10 0.15 0.20 6.40 6.60 1.10 A bp b1 1 4 e c *3 bp x c M θ A1 A Z L Detail F y θ 0° HE 6.20 8° 0.65 e x 0.13 y 0.10 0.805 Z 0.40 L L R10DS0224EJ0100 Rev.1.00 Nov 13, 2013 1 1 0.50 0.60 1.00 Page 20 of 20 Revision History R1EX25032ASA00I/R1EX25032ATA00I/ R1EX25064ASA00I/R1EX25064ATA00I Data Sheet Description Rev. 0.01 0.02 Date Feb 21, 2008 Jan 09, 2009 Page — 1 3 4 5, 6 1.00 Nov 13, 2013 — 2 3 4 18 Summary Initial issue Features 6 Endurance cycles change 10 cycles to 1,000k cycles @25°C. Data retentions years change 10 years to 100years@25°C. Capacitance new is described. Memory cell characteristics new is described. DC characteristics Output voltage VOH1, VOH2 test conditions changed IOL to IOH. AC characteristics Erase/Write endurance is deleted. Notes1. change Not 100% tested. Notes3. deleted. Delete Preliminary, Apply New Renesas format. Change Ordering Information Change Type No. to Orderable P/N. Addition Halogen free. Addition Voltage detector in Block Diagram. Absolute Maximum Ratings: Delete Notes 3. DC Operating Conditions: Delete Notes 2. Addition DC characteristics ISB =0.5μA(Typ)@3.3V, ICC1=0.8mA(Typ)@3.3V, ICC2=1.5mA(Typ)@3.3V Change Note VCC turn on speed should be longer than 10 μs/V. to VCC turn on rate should be slower than 2 μs/V. Addition these items for Notes (Power Source Noise Countermeasures) , (Data of shipped sample) All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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