ISL6615AIRZ

DATASHEET ISL6615A FN6608 Rev 2.00 April 13, 2012 High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features The ISL6615A is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator. The ISL6615A drives both upper and lower gates over a range of 4.5V to 13.2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. Features • Dual MOSFET Drives for Synchronous Rectified Bridge • Advanced Adaptive Zero Shoot-Through Protection - Body Diode Detection - LGATE Detection - Auto-zero of rDS(ON) Conduction Offset Effect • Adjustable Gate Voltage for Optimal Efficiency • 36V Internal Bootstrap Schottky Diode The ISL6615A features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. • Bootstrap Capacitor Overcharging Prevention An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead-time. The ISL6615A includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted. • Support 5V PWM Input Logic The ISL6615A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. • Supports High Switching Frequency (up to 1MHz) - 6A LGATE Sinking Current Capability - Fast Rise/Fall Times and Low Propagation Delays • Tri-State PWM Input for Safe Output Stage Shutdown • Tri-State PWM Input Hysteresis for Applications with Power Sequencing Requirement • Pre-POR Overvoltage Protection • VCC Undervoltage Protection • Expandable Bottom Copper PAD for Better Heat Spreading • Dual Flat No-Lead (DFN) Package - Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile • Pb-free (RoHS compliant) Applications • Optimized for POL DC/DC Converters for IBA Systems • Core Regulators for Intel® and AMD® Microprocessors • High Current Low-Profile DC/DC Converters • High Frequency and High Efficiency VRM and VRD • Synchronous Rectification for Isolated Power Supplies Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” • Technical Brief TB389 “PCB Land Pattern Design and Surface Mount Guidelines for QFN Packages” FN6608 Rev 2.00 April 13, 2012 Page 1 of 13 ISL6615A Block Diagram ISL6615A (UVCC) BOOT VCC UGATE PRE-POR OVP FEATURES +5V 10k POR/ PWM PHASE SHOOTTHROUGH PROTECTION (LVCC) PVCC UVCC = PVCC CONTROL LOGIC 8k LGATE GND SUBSTRATE RESISTANCE FOR DFN DEVICES, THE PAD ON THE BOTTOM SIDE OF THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. PAD Typical Application - 2 Channel Converter VIN +7V TO +13.2V +5V +5V FB COMP VCC VCC VSEN PWM1 UGATE PWM ISL6615A PWM2 PGOOD BOOT PVCC PWM CONTROL (ISL63xx OR ISL65xx) PHASE LGATE GND ISEN1 VID (OPTIONAL) ISEN2 +VCORE +7V TO +13.2V PVCC VIN BOOT FS/EN GND VCC UGATE PWM ISL6615A PHASE LGATE GND THE ISL6615A CAN SUPPORT 5V PWM INPUT FN6608 Rev 2.00 April 13, 2012 Page 2 of 13 ISL6615A Ordering Information PART NUMBER (Notes 1, 2, 3) PART MARKING TEMP. RANGE (°C) PACKAGE (Pb-free) PKG. DWG. # ISL6615ACBZ 6615A CBZ 0 to +70 8 Ld SOIC M8.15 ISL6615ACRZ 615A 0 to +70 10 Ld 3x3 DFN L10.3x3 ISL6615AIBZ 6615A IBZ -40 to +85 8 Ld SOIC M8.15 ISL6615AIRZ 15AI -40 to +85 10 Ld 3x3 DFN L10.3x3 ISL6615AFRZ 15AF -40 to +125 10 Ld 3x3 DFN L10.3x3 NOTES: 1. Add “-T*” suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pbfree products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6615A. For more information on MSL please see techbrief TB363. Pin Configurations ISL6615A (10 LD 3x3 DFN) TOP VIEW ISL6615A (8 LD SOIC) TOP VIEW UGATE 1 8 PHASE BOOT 2 7 PVCC PWM 3 6 VCC GND 4 5 LGATE UGATE 1 BOOT 2 10 PHASE 9 PVCC GND N/C 3 PWM 4 7 VCC GND 5 6 LGATE 8 N/C *RECOMMEND TO CONNECT PIN 3 TO GND AND PIN 8 TO PVCC Functional Pin Descriptions PACKAGE PIN # SOIC DFN PIN SYMBOL 1 1 UGATE Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET. 2 2 BOOT Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the Internal Bootstrap Device “TIMING DIAGRAM” on page 6 under Description for guidance in choosing the capacitor value. - 3, 8 N/C No Connection. Recommend to connect pin 3 to GND and pin 8 to PVCC. 3 4 PWM The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, see the “TIMING DIAGRAM” on page 6 section under Description for further details. Connect this pin to the PWM output of the controller. 4 5 GND Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver. 5 6 LGATE 6 7 VCC Its operating range is +6.8V to 13.2V. Place a high quality low ESR ceramic capacitor from this pin to GND. 7 9 PVCC This pin supplies power to both upper and lower gate drives. Its operating range is +4.5V to 13.2V. Place a high quality low ESR ceramic capacitor from this pin to GND. 8 10 PHASE Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides a return path for the upper gate drive. 9 11 PAD FN6608 Rev 2.00 April 13, 2012 FUNCTION Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET. Connect this pad to the power ground plane (GND) via thermally enhanced connection. Page 3 of 13 ISL6615A Absolute Maximum Ratings Thermal Information Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V BOOT Voltage (VBOOT-GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V UGATE. . . . . . . . . . . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V . . . . . . . . . . . .VPHASE - 3.5V (