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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03ELE, NP80N03KLE
NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N03ELE-E1-AY
Note1, 2
NP80N03ELE-E2-AY
Note1, 2
NP80N03KLE-E1-AY
Note1
NP80N03KLE-E2-AY
Note1
NP80N03CLE-S12-AZ
Note1, 2
NP80N03DLE-S12-AY
Note1, 2
NP80N03MLE-S18-AY
Note1
NP80N03NLE-S18-AY
Note1
LEAD PLATING
PACKING
Pure Sn (Tin)
Tape 800 p/reel
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
Pure Sn (Tin)
TO-220 (MP-25) typ. 1.9 g
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel Temperature 175 degree rated
• Super Low on-state Resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
(TO-262)
• Low input capacitance
Ciss = 2600 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14032EJ5V0DS00 (5th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2000, 2007
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:"
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±80
A
ID(pulse)
±320
A
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse)
Note1
Note2
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Total Power Dissipation (TC = 25°C)
PT
120
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Single Avalanche Current
Note3
IAS
50/40/9
A
Single Avalanche Energy
Note3
EAS
2.5/160/400
mJ
Storage Temperature
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
2
Data Sheet D14032EJ5V0DS
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 40 A
20
41
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
5.3
7.0
mΩ
RDS(on)2
VGS = 5 V, ID = 40 A
6.8
9.0
mΩ
RDS(on)3
VGS = 4.5 V, ID = 40 A
7.5
11
mΩ
Input Capacitance
Ciss
VDS = 25 V,
2600
3900
pF
Output Capacitance
Coss
VGS = 0 V,
590
890
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
270
490
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 40 A,
20
44
ns
Rise Time
tr
VGS = 10 V,
12
31
ns
Turn-off Delay Time
td(off)
RG = 1 Ω
60
120
ns
Fall Time
tf
14
35
ns
Total Gate Charge
QG1
VDD = 24 V, VGS = 10 V, ID = 80 A
48
72
nC
QG2
VDD = 24 V,
28
42
nC
Gate to Source Charge
QGS
VGS = 5 V,
10
nC
Gate to Drain Charge
QGD
ID = 80 A
14
nC
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V,
34
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
22
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
S
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
IAS
90%
VDS
VGS
0
BVDSS
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
Data Sheet D14032EJ5V0DS
3
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
140
100
80
60
40
20
0
0
25
50
75
120
100
80
60
40
20
0
100 125 150 175 200
0
25
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
75
100 125 150 175 200
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
450
ID(pulse)
d
ite
im )
)L 0V
1
(on
S
RDVGS =
(
100
PW
=1
0μ
10
s
0μ
ID(DC)
EAS - Single Avalanche Energy - mJ
1000
ID - Drain Current - A
50
TC - Case Temperature - °C
s
1m
DC
Po
Lim wer
ite Dis
sip
d
s
ati
on
10
1
TC = 25°C
Single pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
400 mJ
400
350
300
IAS = 9 A
40 A
50 A
250
200
160 mJ
150
100
50
2.5 mJ
0
25
100
50
75
100
125
150
175
Starting Tch - Starting Channel Temperature - °C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
100
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 1.25°C/W
1
0.1
Single pulse
0.01
10 μ
100μ
1m
10 m
100 m
1
PW - Pulse Width - s
4
Data Sheet D14032EJ5V0DS
10
100
1000
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
350
100
TA = −50°C
25°C
75°C
150°C
175°C
10
1
VGS = 10 V
300
250
5V
200
150
100
4.5 V
50
0
0.1
| yfs | - Forward Transfer Admittance - S
VGS
5
3
4
- Gate to Source Voltage - V
6
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = 175°C
75°C
25°C
−50°C
1
0.1
0.01
0.01
0.1
10
1
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
30
20
VGS = 4.5 V
5V
10 V
10
0
1
10
100
2.0
1.0
0
4.0
3.0
VDS - Drain to Source Voltage - V
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
2
VGS(th) - Gate to Source Threshold Voltage - V
1
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10
0
ID = 40 A
0
2
4
6
8
10
12
14
16
18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
Data Sheet D14032EJ5V0DS
5
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 4.5 V
5V
10 V
8
6
4
2
Pulsed
100 VGS = 10 V
10
0V
1
ID = 40 A
0
−50
50
0
100
0.1
0
150
VF(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
VGS = 0 V
f = 1 MHz
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
Ciss
1000
Coss
Crss
100
10
0.1
1
10
100
tf
100
td(off)
td(on)
10
tr
VDD = 15 V
VGS = 10 V
RG = 1 Ω
1
0.1
trr - Reverse Recovery Time - ns
100
di/dt = 100 A/μs
VGS = 0 V
100
10
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
40
VDS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
14
35
VGS
30
VDD = 24 V
15 V
6V
25
20
12
10
8
6
15
4
10
VDS
5
2
ID = 80 A
1
0.1
0
1
10
100
0
10
20
30
40
50
60
QG - Gate Charge - nC
IF - Diode Forward Current - A
6
10
1
ID - Drain Current - A
VDS - Drain to Source Voltage - V
1000
1.5
1.0
0.5
Tch - Channel Temperature - °C
Data Sheet D14032EJ5V0DS
70
80
0
VGS - Gate to Source Voltage - V
10
1000
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
Pulsed
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
PACKAGE DRAWINGS (Unit: mm)
Note
1.3 ± 0.2
10.0 ± 0.3
No plating
7.88 MIN.
4
2
3
1.4 ± 0.2
0.7 ± 0.2
2.54 TYP.
9.15 ± 0.3
8.0 TYP.
8.5 ± 0.2
1
5.7 ± 0.4
1.0 ± 0.5
4
4.45 ± 0.2
0.025 to
0.25
P.
.5R
0
TY
R
0.8
2.54 TYP.
P.
TY
0.5 ± 0.2
0.75 ± 0.2
0.5 ±
2.8 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
1.Gate
2.Drain
2.5
3.Source
15.5 MAX.
5.9 MIN.
4
1
0.75 ± 0.1
2.54 TYP.
1.3 ± 0.2
12.7 MIN.
6.0 MAX.
1 2 3
0.5 ± 0.2
2.8 ± 0.2
0.75 ± 0.3
2.54 TYP.
2
3
1.0 ± 0.5
10 TYP.
Note
4.8 MAX.
1.3 ± 0.2
8.5 ± 0.2
1.3 ± 0.2
4.Fin (Drain)
12.7 MIN.
4.8 MAX.
φ 3.6 ± 0.2
10.0 TYP.
1.3 ± 0.2
3
4)TO-262 (MP-25 Fin Cut)
4
8ο
0.25
Note
10.6 MAX.
0.2
0 to
2.54
3)TO-220 (MP-25)
1.3 ± 0.2
2.54 ± 0.25
4.8 MAX.
10 TYP.
1.35 ± 0.3
2)TO-263 (MP-25ZK)
15.25 ± 0.5
1)TO-263 (MP-25ZJ)
3.0 ± 0.3
0.5 ± 0.2
2.8 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
Data Sheet D14032EJ5V0DS
7
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
1 2 3
0.8 ± 0.1
0.5 ± 0.2
2.5 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.3 ± 0.2
1.27 ± 0.2
3.1 ± 0.3
4
4.45 ± 0.2
10.1 ± 0.3
15.9 MAX.
1.27 ± 0.2
2.54 TYP.
10.0 ± 0.2
13.7 ± 0.3
3
13.7 ± 0.3
1 2
4.45 ± 0.2
1.3 ± 0.2
3.1 ± 0.2
4
φ 3.8 ± 0.2
6.3 ± 0.3
2.8 ± 0.3
10.0 ± 0.2
8.9 ± 0.2 1.2 ± 0.3
6)TO-262 (MP-25SK)
5)TO-220 (MP-25K)
0.8 ± 0.1
0.5 ± 0.2
2.54 TYP.
2.5 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Remark
Body
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14032EJ5V0DS
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
80N03
LE
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
MP-25ZJ, MP-25ZK
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Recommended
Condition Symbol
IR60-00-3
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
MP-25, MP-25K, MP-25SK,
Time: 10 seconds or less
MP-25 Fin Cut
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
MP-25ZJ, MP-25ZK,
Time (per side of the device): 3 seconds or less
MP-25K, MP-25SK
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 300°C or below
MP-25, MP-25 Fin Cut
Time (per side of the device): 3 seconds or less
THDWS
P350
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D14032EJ5V0DS
9
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
• The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
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