NP80N055MDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055MDG, NP80N055NDG, NP80N055PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055MDG-S18-AY NP80N055NDG-S18-AY NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY Note Note Note Note LEAD PLATING PACKING Tube 50 p/tube PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g Pure Sn (Tin) Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current rating ID(DC) = ±80 A • Low input capacitance Ciss = 4600 pF TYP. • Designed for automotive application and AEC-Q101 qualified (TO-220) (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19796EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 NP80N055MDG, NP80N055NDG, NP80N055PDG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 55 ±20 ±80 ±200 115 1.8 175 −55 to +175 33 111 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy Note2 Note2 IAR EAR Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.30 83.3 °C/W °C/W 2 Data Sheet D19796EJ1V0DS NP80N055MDG, NP80N055NDG, NP80N055PDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 TEST CONDITIONS VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 5 V, ID = 35 A VGS = 10 V, ID = 40 A NP80N055MDG, NP80N055NDG VGS = 10 V, ID = 40 A NP80N055PDG MIN. TYP. MAX. 1 ±100 UNIT μA nA V S 1.4 25 64 5.4 2.5 Drain to Source On-state Resistance 6.9 mΩ mΩ mΩ mΩ 4.8 6.6 RDS(on)2 VGS = 4.5 V, ID = 35 A NP80N055MDG, NP80N055NDG VGS = 4.5 V, ID = 35 A NP80N055PDG 6.3 11.2 5.9 10.9 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 28 V, ID = 40 A, VGS = 10 V, RG = 0 Ω 4600 390 240 17 13 77 7 6900 590 430 37 33 154 18 135 pF pF pF ns ns ns ns nC nC nC VDD = 44 V, VGS = 10 V, ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V, di/dt = 100 A/μs 90 13 26 0.95 38 45 1.5 V ns nC Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D19796EJ1V0DS 3 NP80N055MDG, NP80N055NDG, NP80N055PDG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 dT - Percentage of Rated Power - % 125 PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 75 50 25 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C 1000 d it e Li m V ) ID(pulse) PW ID - Drain Current - A 100 ) on S( 1i 0 R D GS = = 1i 0 0 (V ID(DC) DC μs 1i m i s w Po ar y nd co Se 1i 0 10 ms D er i ss ip io at i Br o ed ak d it e im nL 1 TC = 25°C Single Pulse wn d it e Lim 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 1.30°C/W 1 0.1 Single Pulse 0.01 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 4 Data Sheet D19796EJ1V0DS NP80N055MDG, NP80N055NDG, NP80N055PDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 10 V 200 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A VGS = 4.5 V 100 ID - Drain Current - A 150 150 10 V VGS = 4.5 V 100 50 Pulsed NP80N055MDG, NP80N055NDG 0 0 0.5 1 1.5 2 2.5 50 Pulsed NP80N055PDG 0 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 1000 100 ID - Drain Current - A 3 10 1 0.1 0.01 0.001 0.0001 0 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C VDS = 10 V Pulsed 1 2 3 4 2 1 VDS = VGS ID = 250 μA -75 -25 25 75 125 175 225 0 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 Tch = −55°C −25°C 25°C 75°C 125°C 10 150°C 175°C VDS = 5 V Pulsed 1 0.1 1 10 100 ID - Drain Current - A Data Sheet D19796EJ1V0DS 5 NP80N055MDG, NP80N055NDG, NP80N055PDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 12 10 8 VGS = 4.5 V 6 4 2 0 1 10 100 1000 10 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 12 10 8 6 4 2 0 1 10 100 1000 VGS = 4.5 V 10 V Pulsed NP80N055PDG Pulsed NP80N055MDG, NP80N055NDG ID - Drain Current - A ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 20 16 12 8 4 NP80N055MDG, NP80N055NDG 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V ID = 4 0 A Pulsed 20 16 12 8 4 NP80N055PDG 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V ID = 4 0 A Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ 16 14 12 10 8 6 4 2 0 -75 -25 25 75 125 175 225 Pulsed NP80N055MDG, NP80N055NDG VGS = 4.5 V, ID = 35 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ 16 14 12 10 8 6 4 2 0 -75 -25 25 75 125 175 225 Pulsed NP80N055PDG VGS = 4.5 V, ID = 35 A 10 V, 40 A 10 V, 40 A Tch - Channel Temperature - °C Tch - Channel Temperature - °C 6 Data Sheet D19796EJ1V0DS NP80N055MDG, NP80N055NDG, NP80N055PDG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 1000 10000 Ciss 100 td(off) td(on) 10 VDD = 28 V VGS = 10 V RG = 0 Ω 0.1 1 tr tf 1000 VGS = 0 V f = 1 MHz 100 0.01 0.1 1 Coss Crss 1 10 100 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 60 12 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 VDS - Drain to Source Voltage - V IF - Diode Forward Current - A 50 40 30 20 10 0 0 VDD = 44 V 28 V 11 V 10 8 6 VGS 4 2 ID = 80 A 0 100 VDS - Drain to Source Voltage - V 100 10 1 0.1 10 V 4.5 V VGS = 0 V VDS Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 20 40 60 80 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 trr - Reverse Recovery Time - ns di/dt = 100 A/μs VGS = 0 V 10 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D19796EJ1V0DS 7 NP80N055MDG, NP80N055NDG, NP80N055PDG PACKAGE DRAWINGS (Unit: mm) TO-220 (MP-25K) 10.0±0.2 2.8±0.3 TO-262 (MP-25SK) φ 3.8±0.2 1.2±0.3 4.45±0.2 1.3±0.2 10.0±0.2 4.45±0.2 1.3±0.2 10.1±0.3 15.9 MAX. 6.3±0.3 4 1 3.1±0.2 13.7±0.3 4 1 13.7±0.3 2 3 1.27±0.2 0.8±0.1 1.27±0.2 0.8±0.1 3.1±0.3 2 3 8.9±0.2 0.5±0.2 2.54 TYP. 2.54 TYP. 2.5±0.2 0.5±0.2 2.54 TYP. 2.54 TYP. 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) TO-263 (MP-25ZP) 1.35 ±0.3 EQUIVALENT CIRCUIT Drain 4.45 ±0.2 1.3 ±0.2 No plating 10.0 ±0.3 7.88 MIN. 4 8.0 TYP. Gate 9.15 ±0.3 15.25 ±0.5 0.025 to 0.25 Body Diode 0.5 Source 0.6 ±0 2.54 12 3 2.5 1. Gate 2. Drain 3. Source 4. Fin (Drain) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 8 Data Sheet D19796EJ1V0DS 2.54 ±0.25 0.75 ±0.2 .2 0 to 8 ˚ 0.25 NP80N055MDG, NP80N055NDG, NP80N055PDG TAPE INFORMATION (NP80N055PDG) There are two types (-E1B, -E2B) of taping depending on the direction of the device. Draw-out side Reel side −E1B TYPE −E2B TYPE MARKING INFORMATION NEC 80N055 DG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow NP80N055PDG Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Recommended Condition Symbol IR60-00-3 Wave soldering NP80N055MDG, NP80N055NDG Partial heating NP80N055MDG, NP80N055NDG, NP80N055PDG Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less THDWS P350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet D19796EJ1V0DS 9 NP80N055MDG, NP80N055NDG, NP80N055PDG • T he information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E