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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N055VDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N055VDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP90N055VDG-E1-AY NP90N055VDG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
PACKAGE TO-252 (MP-3ZP) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Logic level • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current rating ID(DC) = ±90 A • Low input capacitance Ciss = 4600 pF TYP. • Designed for automotive application and AEC-Q101 qualified
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
55 ±20 ±90 ±200 105 1.2 175 −55 to +175 33 111
V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy
Note2 Note2
IAR EAR
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.43 125 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D19792EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan
2009
NP90N055VDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 5 V, ID = 45 A VGS = 10 V, ID = 45 A VGS = 4.5 V, ID = 35 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 28 V, ID = 45 A, VGS = 10 V, RG = 0 Ω
MIN.
TYP.
MAX. 1 ±100
UNIT
μA
nA V S
1.4 30 66 4.8 6.0 4600 390 240 17 13 76 7
2.5
Drain to Source On-state Resistance
6.0 10.5 6900 590 440 34 33 152 18 135
mΩ mΩ pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 44 V, VGS = 10 V, ID = 90 A IF = 90 A, VGS = 0 V IF = 90 A, VGS = 0 V, di/dt = 100 A/μs
90 13 26 0.9 38 45
1.5
V ns nC
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 τ τ = 1 μs Duty Cycle ≤ 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
2
Data Sheet D19792EJ1V0DS
NP90N055VDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
125
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175
PT - Total Power Dissipation - W
100 75 50 25 0 0 25 50 75 100 125 150 175
TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - °C
1000
d it e Lim V ) i0 =1
ID(pulse)
PW
ID - Drain Current - A
100
R
(o DS
n)
=
1i 0
(V
GS
0
ID(DC)
μs
DC
y ar nd co Se
1i ms
i
1i 0
10
w Po D er ip iss io at
m
i
s
Br o ed ak
1
TC = 25°C Single Pulse
d it e im nL
wn d it e Lim
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
100
Rth(ch-A) = 125°C/W
10 Rth(ch-C) = 1.43°C/W 1
0.1 Single Pulse 0.01 100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19792EJ1V0DS
3
NP90N055VDG
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
250 200 1000 100
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
ID - Drain Current - A
10 V 150 100 50 Pulsed 0 0 0.5 1 1.5 2 2.5 3 VGS = 4.5 V
10 1 0.1 0.01 0.001 0.0001 0
Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C VDS = 10 V Pulsed 1 2 3 4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S
3 100
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
2
10
Tch = −55°C −25°C 25°C 75°C
125°C 175°C
1 VDS = VGS ID = 250 μA 0 -75 -25 25 75 125 175 225
VDS = 5 V Pulsed 1 0.1 1 10 100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ
12 10 8 6 4 2 0 0 4 8 12 16 20 ID = 4 5 A Pulsed
12 10 8 6 4 2 Pulsed 0 1 10 100 1000 ID - Drain Current - A VGS = 4.5 V
10 V
VGS - Gate to Source Voltage - V
4
Data Sheet D19792EJ1V0DS
NP90N055VDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - mΩ
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
16
Ciss, Coss, Crss - Capacitance - pF
100000
14 12 10 8 6 4 2 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - °C
VGS = 4.5 V
10000
Ciss
Coss 1000 VGS = 0 V f = 1 MHz 100 0.01 0.1 1 Crss
10 V ID = 4 5 A Pulsed
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10 VDD = 44 V 28 V 11 V 8 6 VGS 4 2 ID = 9 0 A 60 80 0 100
td(on), tr, td(off), tf - Switching Time - ns
VDS - Drain to Source Voltage - V
40 30 20 10 0
100 tf
td(off)
td(on) 10 VDD = 28 V VGS = 10 V RG = 0 Ω 0.1 1 10 100 tr
VDS
1
0
20
40
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 Pulsed 1.2 1.4 10 V VGS = 0 V
di/dt = 100 A/μs VGS = 0 V 10 0.1 1 10 100 IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D19792EJ1V0DS
5
VGS - Gate to Source Voltage - V
NP90N055VDG
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZP)
1.0 TYP.
6.5±0.2 5.1 TYP. 4.3 MIN. 4 2.3±0.1 0.5±0.1 No Plating
6.1±0.2 10.4 MAX. (9.8 TYP.)
4.0 MIN.
1.13 1 2 3
0.8
No Plating 0 to 0.25 0.5±0.1 1.0
1.14 MAX. 2.3 2.3
0.76±0.12
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D19792EJ1V0DS
0.51 MIN.
NP90N055VDG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
90N055 DG
Abbreviation of part number Pb-free plating marking Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP90N055VDG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Infrared reflow
Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Recommended Condition Symbol IR60-00-3
Partial heating
Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19792EJ1V0DS
7
NP90N055VDG
• T he information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E0904E