0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
R5F1036AASP#35

R5F1036AASP#35

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    LSSOP20

  • 描述:

    IC MCU 16BIT 16KB FLASH 20LSSOP

  • 数据手册
  • 价格&库存
R5F1036AASP#35 数据手册
Datasheet R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 RL78/G12 RENESAS MCU True low-power platform (63 μA/MHz) for the general-purpose applications, with 1.8-V to 5.5-V operation, 2- to 16-Kbyte code flash memory, and 31 DMIPS at 24 MHz 1. OUTLINE 1.1 Features Ultra-low power consumption technology  VDD = single power supply voltage of 1.8 to 5.5 V which can operate at a low voltage  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high speed (0.04167 s: @ 24 MHz operation with high-speed on-chip oscillator) to ultra-low speed (1 s: @ 1 MHz operation)  Address space: 1 MB  General-purpose registers: (8-bit register x 8) x 4 banks  On-chip RAM: 256 B to 2 KB Code flash memory  Code flash memory: 2 to 16 KB  Block size: 1 KB  Prohibition of block erase and rewriting (security function)  On-chip debug function  DMA (Direct Memory Access) controller Note  2 channels  Number of clocks during transfer between 8/16-bit SFR and internal RAM: 2 clocks Multiplier and divider/multiply-accumulator  16 bits x 16 bits = 32 bits (Unsigned or signed)  32 bits x 32 bits = 32 bits (Unsigned)  16 bits x 16 bits + 32 bits = 32 bits (Unsigned or signed) Serial interface  CSI  UART  Simplified I2C communication  I2C communication : 1 to 3 channels : 1 to 3 channels : 0 to 3 channels : 1 channel Timer  16-bit timer : 4 to 8 channels  12-bit interval timer : 1 channel  Watchdog timer : 1 channel (operable with the dedicated low-speed on-chip oscillator) Self-programming (with flash shield window function) Data flash memory Note  Data flash memory: 2 KB  Back ground operation (BGO): Instructions are executed from the program memory while rewriting the data flash memory.  Number of rewrites: 1,000,000 times (TYP.)  Voltage of rewrites: VDD = 1.8 to 5.5 V High-speed on-chip oscillator  Select from 24 MHz, 16 MHz, 12 MHz, 8 MHz, 6 MHz, 4 MHz, 3 MHz, 2 MHz, and 1 MHz  High accuracy: +/- 1.0 % (VDD = 1.8 to 5.5 V, TA = -20 to +85 °C) Operating ambient temperature  TA = -40 to +85 °C (A: Consumer applications, D: Industrial applications)  TA = -40 to +105 °C (G: Industrial applications) Note Power management and reset function  On-chip power-on-reset (POR) circuit  On-chip voltage detector (LVD) (Select interrupt and reset from 12 levels) A/D converter  8/10-bit resolution A/D converter (VDD = 1.8 to 5.5 V)  8 to 11 channels, internal reference voltage (1.45 V), and temperature sensor Note I/O port  I/O port: 18 to 26 (N-ch open drain I/O [withstand voltage of 6 V]: 2, N-ch open drain I/O [VDD withstand voltage]: 4 to 9)  Can be set to N-ch open drain, TTL input buffer, and on-chip pull-up resistor  Different potential interface: Can connect to a 1.8/2.5/3 V device  On-chip key interrupt function  On-chip clock output/buzzer output controller Others  On-chip BCD (binary-coded decimal) correction circuit Note Can be selected only in HS (high-speed main) mode. Remark The functions mounted depend on the product. See 1.7 Outline of Functions. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 1 of 108 RL78/G12 1. OUTLINE Օ ROM, RAM capacities Code flash Data flash RAM 20 pins 24 pins 30 pins 16 KB 2 KB 2 KB – – R5F102AA – 2 KB – 1.5 KB – 12 KB 2KB 1 KB – 8 KB 2 KB 768 B – 4 KB 2KB 512 B – 2 KB 2 KB – Notes 1. 256 B – R5F1026A Note 1 R5F1036A Note 1 R5F10269 Note 1 R5F10369 Note 1 R5F10268 Note 1 R5F10368 Note 1 R5F103AA R5F1027A Note 1 – R5F1037A Note 1 – R5F10279 Note 1 R5F102A9 R5F10379 Note 1 R5F103A9 R5F10278 Note 1 R5F102A8 R5F10378 Note 1 R5F103A8 R5F10267 R5F10277 R5F102A7 R5F10367 R5F10377 R5F103A7 R5F10266 Note 2 – – R5F10366 Note 2 – – This is 640 bytes when the self-programming function or data flash function is used. (For details, see CHAPTER 3 CPU ARCHITECTURE in the RL78/G12 User’s Manual.) 2. The self-programming function cannot be used for R5F10266 and R5F10366. Caution When the flash memory is rewritten via a user program, the code flash area and RAM area are used because each library is used. When using the library, refer to RL78 Family Flash Self Programming Library Type01 User's Manual and RL78 Family Data Flash Library Type04 User's Manual. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 2 of 108 RL78/G12 1. OUTLINE 1.2 List of Part Numbers Figure 1-1. Part Number, Memory Size, and Package of RL78/G12 Product name Ordering part number R 5 F 1 0 2 A A A x x x S P #V0 Packaging specifications: #U5, #05, #25: Tray (HWQFN) #V0, #10, #30: Tray (LSSOP30) #V5: Tube (LSSOP20) #15: Tray (TSSOP20) #35: Tray (TSSOP20), Tube (LSSOP20) #W5, #45: Embossed Tape (HWQFN) #X0, #50: Embossed Tape (LSSOP30) #X5: Embossed Tape (LSSOP20) #55: Embossed Tape (LSSOP20, TSSOP20) Package type: SM : TSSOP, 0.65-mm pitch SP : LSSOP, 0.65-mm pitch NA : HWQFN, 0.50-mm pitch ROM number (Omitted with blank products) Fields of application: A : Consumer applications, TA = -40°C to +85°C D : Industrial applications, TA = -40°C to +85°C G : Industrial applications, TA = -40°C to +105°C ROM capacity: 6 : 7: 8: 9 : A : 2 KB 4 KB 8 KB 12 KB 16 KB Pin count: 6 : 20-pin 7 : 24-pin A : 30-pin RL78/G12 group 102Note 1 103Notes 1, 2 Memory type: F : Flash memory Renesas MCU Renesas semiconductor product Notes 1. For details about the differences between the R5F102 products and the R5F103 products of RL78/G12, see 1.3 Differences between the R5F102 Products and the R5F103 Products. 2. Products only for “A: Consumer applications (TA = -40 to +85°C)” and “D: Industrial applications (TA = -40 to +85°C)” R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 3 of 108 RL78/G12 1. OUTLINE Table 1-1. List of Ordering Part Numbers Pin count Package Data flash Fields of Application Note 20 pins 24 pins 20-pin plastic LSSOP (4.4 × 6.5 mm, 0.65mm pitch) Mounted A R5F1026AASP, R5F10269ASP, R5F10268ASP, R5F10267ASP, R5F10266ASP D R5F1026ADSP, R5F10269DSP, R5F10268DSP, R5F10267DSP, R5F10266DSP G R5F1026AGSP, R5F10269GSP, R5F10268GSP, R5F10267GSP, R5F10266GSP Not A mounted R5F1036AASP, R5F10369ASP, R5F10368ASP, R5F10367ASP, R5F10366ASP D R5F1036ADSP, R5F10369DSP, R5F10368DSP, R5F10367DSP, R5F10366DSP #V5, #35, #X5, #55 PLSP0020JB-A #V5, #35, #X5, #55 PLSP0020JB-A #15, #35, #55 PTSP0020JI-A Mounted A Not A mounted R5F1036AASM, R5F10369ASM, R5F10368ASM, R5F10367ASM, R5F10366ASM 24-pin plastic HWQFN (4 × 4 mm, 0.5-mm pitch) Mounted A R5F1027AANA, R5F10279ANA, R5F10278ANA, R5F10277ANA #U5, #W5 PWQN0024KE-A R5F1027AANA, R5F10279ANA, R5F10278ANA, R5F10277ANA #05, #25, #45 PWQN0024KF-A D R5F1027ADNA, R5F10279DNA, R5F10278DNA, R5F10277DNA #U5, #W5 PWQN0024KE-A G R5F1027AGNA, R5F10279GNA, R5F10278GNA, R5F10277GNA R5F1027AGNA, R5F10279GNA, R5F10278GNA, R5F10277GNA #05, #25, #45 PWQN0024KF-A R5F1037AANA, R5F10379ANA, R5F10378ANA, R5F10377ANA #U5, #W5 PWQN0024KE-A R5F1037AANA, R5F10379ANA, R5F10378ANA, R5F10377ANA #05, #25, #45 PWQN0024KF-A D R5F1037ADNA, R5F10379DNA, R5F10378DNA, R5F10377DNA #U5, #W5 PWQN0024KE-A Mounted A R5F102AAASP, R5F102A9ASP, R5F102A8ASP, R5F102A7ASP #V0, #10, #30, #X0, #50 PLSP0030JB-B D R5F102AADSP, R5F102A9DSP, R5F102A8DSP, R5F102A7DSP G R5F102AAGSP, R5F102A9GSP, R5F102A8GSP, R5F102A7GSP #V0, #10, #30, #X0, #50 PLSP0030JB-B G 30-pin plastic LSSOP (7.62 mm (300), 0.65mm pitch) R5F1026AASM, R5F10269ASM, R5F10268ASM, R5F10267ASM, R5F10266ASM RENESAS Code Packaging Specifications 20-pin plastic TSSOP (4.4 x 6.5 mm, 0.65mm pitch) Not A mounted 30 pins Ordering Part Number Product Name R5F1026AGSM, R5F10269GSM, R5F10268GSM, R5F10267GSM, R5F10266GSM Not A mounted R5F103AAASP, R5F103A9ASP, R5F103A8ASP, R5F103A7ASP D R5F103AADSP, R5F103A9DSP, R5F103A8DSP, R5F103A7DSP Note For fields of application, see Figure 1-1 Part Number, Memory Size, and Package of RL78/G12. Caution The ordering part numbers represent the numbers at the time of publication. For the latest ordering part numbers, refer to the target product page of the Renesas Electronics website. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 4 of 108 RL78/G12 1. OUTLINE 1.3 Differences between the R5F102 Products and the R5F103 Products The following are differences between the R5F102 products and the R5F103 products. Օ Whether the data flash memory is mounted or not Օ High-speed on-chip oscillator oscillation frequency accuracy Օ Number of channels in serial interface Օ Whether the DMA function is mounted or not Օ Whether a part of the safety functions are mounted or not 1.3.1 Data Flash The data flash memory of 2 KB is mounted on the R5F102 products, but not on the R5F103 products. Product Data Flash R5F102 products 2 KB R5F1026A, R5F1027A, R5F102AA, R5F10269, R5F10279, R5F102A9, R5F10268, R5F10278, R5F102A8, R5F10267, R5F10277, R5F102A7, R5F10266 Note R5F103 products Not mounted R5F1036A, R5F1037A, R5F103AA, R5F10369, R5F10379, R5F103A9, R5F10368, R5F10378 R5F103A8, R5F10367, R5F10377, R5F103A7, R5F10366 Note The RAM in the R5F10266 has capacity as small as 256 bytes. Depending on the customer's program specification, the stack area to execute the data flash library may not be kept and data may not be written to or erased from the data flash memory. Caution When the flash memory is rewritten via a user program, the code flash area and RAM area are used because each library is used. When using the library, refer to RL78 Family Flash Self Programming Library Type01 User's Manual and RL78 Family Data Flash Library Type04 User's Manual. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 5 of 108 RL78/G12 1. OUTLINE 1.3.2 On-chip oscillator characteristics (1) High-speed on-chip oscillator oscillation frequency of the R5F102 products Oscillator Condition MIN MAX Unit High-speed on-chip TA = -20 to +85°C -1.0 +1.0 % oscillator oscillation TA = -40 to -20°C -1.5 +1.5 frequency accuracy TA = +85 to +105°C -2.0 +2.0 (2) High-speed on-chip oscillator oscillation frequency of the R5F103 products Oscillator Condition MIN MAX Unit High-speed on-chip TA = -40 to + 85°C -5.0 +5.0 % oscillator oscillation frequency accuracy 1.3.3 Peripheral Functions The following are differences in peripheral functions between the R5F102 products and the R5F103 products. R5F102 product RL78/G12 20, 24 pin 30 pin product product Serial interface R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 30 pin product product UART 1 channel 3 channels 1 channel CSI 2 channels 3 channels 1 channel Simplified I2C 2 channels 3 channels None DMA function Safety function R5F103 product 20, 24 pin 2 channels None CRC operation Yes None RAM guard Yes None SFR guard Yes None Page 6 of 108 RL78/G12 1. OUTLINE 1.4 Pin Configuration (Top View) 1.4.1 20-pin products ● 20-pin plastic LSSOP (4.4 × 6.5 mm, 0.65-mm pitch) ● 20-pin plastic TSSOP (4.4 × 6.5 mm, 0.65-mm pitch) 1 2 3 4 5 6 7 8 9 10 RL78/G12 (Top View) P20/ANI0/AV REFP P42/ANI21/SCK01Note/SCL01Note /TI03/TO03 P41/ANI22/SO01Note/SDA01Note/TI02/TO02/INTP1 P40/KR0/TOOL0 P125/KR1/SI01Note /RESET P137/INTP0 P122/KR2/X2/EXCLK/(TI02)/(INTP2) P121/KR3/X1/(TI03)/(INTP3) VSS VDD 20 19 18 17 16 15 14 13 12 11 P21/ANI1/AV REFM P22/ANI2 P23/ANI3 P10/ANI16/PCLBUZ0/SCK00/SCL00Note P11/ANI17/SI00/RxD0/SDA00 Note /TOOLRxD P12/ANI18/SO00/TxD0/TOOLTxD P13/ANI19/TI00/TO00/INTP2 P14/ANI20/TI01/TO01/INTP3 P61/KR5/SDAA0/(RxD0) P60/KR4/SCLA0/(TxD0) Note Provided only in the R5F102 products. Remarks 1. For pin identification, see 1.5 Pin Identification. 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the RL78/G12 User’s Manual. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 7 of 108 RL78/G12 1. OUTLINE 1.4.2 24-pin products P23/ANI3 Note P10/ANI16/PCLBUZ0/SCK00/SCL00 Note P11/ANI17/SI00/RxD0/SDA00 /TOOLRxD P12/ANI18/SO00/TxD0/TOOLTxD P13/ANI19/TO00/INTP2 P14/ANI20/TO01/INTP3 ● 24-pin plastic HWQFN (4 × 4 mm, 0.5-mm pitch) exposed die pad P22/ANI2 P21/ANI1/AVREFM P20/ANI0/AVREFP Note Note P42/ANI21/SCK01 /SCL01 /TI03/TO03 Note Note P41/ANI22/SO01 /SDA01 /TI02/TO02/INTP1 P40/KR0/TOOL0 18 17 16 15 14 13 12 19 20 11 21 RL78/G12 10 22 (Top View) 9 23 8 24 7 1 2 3 4 5 6 P61/KR5/SDAA0/(RxD0) P60/KR4/SCLA0/(TxD0) P03/KR9 Note Note P02/KR8/(SCK01) /(SCL01) Note Note P01/KR7/(SO01) /(SDA01) Note P00/KR6/(SI01) Note P125/KR1/SI01 /RESET P137/INTP0 P122/KR2/X2/EXCLK/(TI02)/(INTP2) P121/KR3/X1/(TI03)/(INTP3) VSS VDD INDEX MARK Note Provided only in the R5F102 products. Remarks 1. For pin identification, see 1.5 Pin Identification. 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the RL78/G12 User’s Manual. 3. It is recommended to connect an exposed die pad to Vss. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 8 of 108 RL78/G12 1. OUTLINE 1.4.3 30-pin products ● 30-pin plastic LSSOP (7.62 mm (300), 0.65-mm pitch) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RL78/G12 (Top View) P20/ANI0/AVREFP P01/ANI16/TO00/RxD1Note P00/ANI17/TI00/TxD1Note P120/ANI19 P40/TOOL0 RESET P137/INTP0 P122/X2/EXCLK P121/X1 REGC VSS VDD P60/SCLA0 P61/SDAA0 P31/TI03/TO03/INTP4/PCLBUZ0 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 P21/ANI1/AVREFM P22/ANI2 P23/ANI3 P147/ANI18 Note P10/SCK00/SCL00 /(TI07/TO07) Note P11/SI00/RxD0/TOOLRxD/SDA00 /(TI06/TO06) P12/SO00/TxD0/TOOLTxD/(TI05/TO05) P13/TxD2Note/SO20Note/(SDAA0)Note/(TI04/TO04) Note Note Note Note P14/RxD2 /SI20 /SDA20 /(SCLA0) /(TI03/TO03) Note Note P15/PCLBUZ1/SCK20 /SCL20 /(TI02/TO02) P16/TI01/TO01/INTP5/(RxD0) P17/TI02/TO02/(TxD0) P51/INTP2/SO11Note P50/INTP1/SI11Note/SDA11Note Note Note P30/INTP3/SCK11 /SCL11 Note Provided only in the R5F102 products. Caution Connect the REGC pin to VSS via capacitor (0.47 to 1 µF). Remarks 1. For pin identification, see 1.5 Pin Identification. 2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the RL78/G12 User’s Manual. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 9 of 108 RL78/G12 1. OUTLINE 1.5 Pin Identification REGC: Regulator Capacitance Analog input RESET: Reset AVREFM: Analog Reference Voltage Minus RxD0 to RxD2: Receive Data AVREFP: Analog reference voltage plus SCK00, SCK01, SCK11, EXCLK: External Clock Input SCK20: (Main System Clock) SCL00, SCL01, ANI0 to ANI3, ANI16 to ANI22: Serial Clock Input/Output INTP0 to INTP5 Interrupt Request From Peripheral SCL11, SCL20, SCLA0: KR0 to KR9: Key Return SDA00, SDA01, SDA11, Serial Clock Input/Output P00 to P03: Port 0 SDA20, SDAA0: Serial Data Input/Output P10 to P17: Port 1 SI00, SI01, SI11, SI20: Serial Data Input P20 to P23: Port 2 SO00, SO01, SO11, P30 to P31: Port 3 SO20: Serial Data Output P40 to P42: Port 4 TI00 to TI07: Timer Input P50, P51: Port 5 TO00 to TO07: Timer Output P60, P61: Port 6 TOOL0: Data Input/Output for Tool P120 to P122, P125: Port 12 TOOLRxD, TOOLTxD: Data Input/Output for External P137: Port 13 P147: Port 14 PCLBUZ0, PCLBUZ1: Device TxD0 to TxD2: Transmit Data Programmable Clock Output/ VDD: Power supply Buzzer Output VSS: Ground X1, X2: Crystal Oscillator (Main System Clock) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 10 of 108 RL78/G12 1. OUTLINE 1.6 Block Diagram 1.6.1 20-pin products TAU0 (4ch) TI00/TO00 ch00 TI01/TO01 ch01 TI02/TO02 ch02 TI03/TO03 ch03 PORT 1 5 P10 to P14 PORT 2 4 P20 to P23 PORT 4 3 P40 to P42 PORT 6 2 P60, P61 PORT 12 3 P121, P122, P125 SAU0 (2ch) RxD0 TxD0 UART0 Code flash: 16 KB Data flash: 2 KBNote SCK00 SI00 SO00 CSI00 SCK01 SI01 SO01 CSI01Note SCL00 SDA00 IIC00Note SCL01 SDA01 Note PORT 13 P137 Buzzer/clock output control PCLBUZ0 Interrupt control RL78 CPU core Key return 6ch 6 KR0 to KR5 Interrupt control 4ch 4 INTP0 to INTP3 Note DMA 2ch IIC01 RAM 1.5 KB CRCNote Window watchdog timer TOOL0 Multiplier & divider multiplyaccumulator SCLA0 SDAA0 12-bit interval timer On-chip debug BCD adjustment IICA0 Low Speed On-chip oscillator 15 kHz RESET Clock Generator + Reset Generator Main OSC 1 to 20 MHz X1 X2/EXCLK Power-on reset/voltage detector VDD 10-bit A/D converter 11ch 9 ANI2, ANI3, ANI16 to ANI22 ANI0/AVREFP ANI1/AVREFM High-Speed on-chip oscillator 1 to 24 MHz VSS TOOL TOOL TxD RxD Note Provided only in the R5F102 products. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 11 of 108 RL78/G12 1. OUTLINE 1.6.2 24-pin products TAU0 (4ch) TI00/TO00 ch00 TI01/TO01 ch01 TI02/TO02 ch02 TI03/TO03 ch03 Port 0 4 P00 to P03 Port 1 5 P10 to P14 Port 2 4 P20 to P23 Port 4 3 P40 to P42 Port 6 2 P60, P61 Port 12 3 P121, P122, 125 SAU0 (2ch) RxD0 TxD0 UART0 SCK00 SI00 SO00 CSI00 SCK01 SI01 SO01 Code flash: 16 KB Note Data flash: 2 KB P137 Port 13 Buzzer/clock output control CSI01 SCL00 SDA00 IIC00 SCL01 SDA01 IIC01 Note Note PCLBUZ0 Interrupt control RL78 CPU core Key return 10ch 10 Interrupt control 4ch 4 Note RAM 1.5 KB On-chip debug BCD adjustment IICA0 SCLA0 SDAA0 Multiplier & divider/ multiplyaccumulator RESET Clock Generator + Reset Generator Main OSC 1to 20 MHz X1 X2/EXCLK Low Speed On-chip oscillator 15 KHz 12-bit Interval timer 10-bit A/D converter 11ch 9 ANI2, ANI3, ANI16 to ANI22 ANI0/AVREFP ANI1/AVREFM High-Speed On-chip oscillator 1 to 24 MHz Poer-on reset/voltage detector IICA0 VDD INTP0 to INTP3 CRCNote Window watchdog timer TOOL0 KR0 to KR9 Note DMA 2ch VSS TOOL TOOL TxD RxD Note Provided only in the R5F102 products. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 12 of 108 RL78/G12 1. OUTLINE 1.6.3 30-pin products TAU (8ch) TI00 TO00 ch0 TI01/TO01 ch1 TI02/TO02 ch2 Port 0 2 P00, P01 TI03/TO03 ch3 Port 1 8 P10 to P17 (TI04/TO04) ch4 Port 2 4 P20 to P23 (TI05/TO05) ch5 Port 3 2 P30, P31 (TI06/TO06) ch6 (TI07/TO07) ch7 P40 Port 4 SAU0 (4ch) RxD0 TxD0 RxD1 TxD1 SCK00 SI00 SO00 SCK11 SI11 SO11 Code flash: 16 KB Data flash: 2 KBNote Port 5 2 P50, P51 Port 6 2 P60, P61 Port 12 2 UART0 P120 UART1Note CSI00 RL78 CPU core Port 13 P137 Port 14 P147 Note DMA 2ch Note CSI11 SCL00 SDA00 IIC00 SCL11 SDA11 IIC11 RAM 2 KB Note Buzzer/clock output control Interrupt control 6ch Note CRC SAU0 (2ch) RxD2 TxD2 UART2 SCK20 SI20 SO20 CSI20 SCL20 SDA20 IIC20 2 6 PCLBUZ0, PCLBUZ1 INTP0 to INTP5 Note RESET Note Clock Generator + Reset Generator Main OSC 1 to 20 MHz X1 X2/EXCLK Window watchdog timer Low Speed On-chip oscillator 15 KHz 12-bit Interval timer High-Speed On-chip oscillator 1 to 24 MHz Poer-on reset/voltage detector VDD TOOL0 P121, P122 Interrupt control VSS TOOL TOOL TxD RxD 10-bit A/D converter 8ch 6 ANI2, ANI3, ANI16 to ANI19 ANI0/AVREFP ANI1/AVREFM On-chip debug VOLTAGE REGULATOR REGC BCD adjustment Multiplier & divider/ multiplyaccumulator SCLA0 SDAA0 IICA0 Note Provided only in the R5F102 products. Remark Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the RL78/G12 User’s Manual. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 13 of 108 RL78/G12 1. OUTLINE 1.7 Outline of Functions This outline describes the function at the time when Peripheral I/O redirection register (PIOR) is set to 00H. (1/2) Item 20-pin R5F1026x Code flash memory Data flash memory RAM 24-pin R5F1036x R5F1027x 2 KB R5F102Ax R5F103Ax 4 to 16 KB – 2 KB – 2 KB 512 B to 1.5 KB Address space High-speed system clock R5F1037x 2 to 16 KB Note 1 256 B to 1.5 KB Main 30-pin – 512 B to 2KB 1 MB X1 (crystal/ceramic) oscillation, external main system clock input (EXCLK) system HS (High-speed main) mode : 1 to 20 MHz (VDD = 2.7 to 5.5 V), clock HS (High-speed main) mode : 1 to 16 MHz (VDD = 2.4 to 5.5 V), LS (Low-speed main) mode : 1 to 8 MHz (VDD = 1.8 to 5.5 V) High-speed on-chip oscillator clock HS (High-speed main) mode : 1 to 24 MHz (VDD = 2.7 to 5.5 V), HS (High-speed main) mode : 1 to 16 MHz (VDD = 2.4 to 5.5 V), LS (Low-speed main) mode : 1 to 8 MHz (VDD = 1.8 to 5.5 V) Low-speed on-chip oscillator clock 15 kHz (TYP) General-purpose register (8-bit register × 8) × 4 banks Minimum instruction execution time 0.04167 µs (High-speed on-chip oscillator clock: fIH = 24 MHz operation) 0.05 µs (High-speed system clock: fMX = 20 MHz operation) Instruction set ● Data transfer (8/16 bits) ● Adder and subtractor/logical operation (8/16 bits) ● Multiplication (8 bits × 8 bits) ● Rotate, barrel shift, and bit manipulation (set, reset, test, and Boolean operation), etc. I/O port Total CMOS I/O CMOS input 18 22 26 12 16 21 (N-ch O.D. I/O (N-ch O.D. I/O (N-ch O.D. I/O [VDD withstand voltage]: 4) [VDD withstand voltage]: 5) [VDD withstand voltage]: 9) 4 4 3 N-ch open-drain I/O 2 (6 V tolerance) Timer 16-bit timer 8 channels Watchdog timer 1 channel 12-bit Interval timer 1 channel Timer output Notes 1. 4 channels 4 channels 8 channels (PWM outputs: 3 Note 3) (PWM outputs: 7 Notes 2, 3) The self-programming function cannot be used in the R5F10266 and R5F10366. 2. The maximum number of channels when PIOR0 is set to 1. 3. The number of PWM outputs varies depending on the setting of channels in use (the number of masters and slaves). (See 6.9.3 Operation as multiple PWM output function in the RL78/G12 User’s Manual.) Caution When the flash memory is rewritten via a user program, the code flash area and RAM area are used because each library is used. When using the library, refer to RL78 Family Flash Self Programming Library Type01 User's Manual and RL78 Family Data Flash Library Type04 User's Manual. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 14 of 108 RL78/G12 1. OUTLINE (2/2) Item 20-pin R5F1026x 24-pin R5F1036x Clock output/buzzer output R5F1027x 30-pin R5F1037x R5F102Ax 1 R5F103Ax 2 2.44 kHz to 10 MHz: (Peripheral hardware clock: fMAIN = 20 MHz operation) 8/10-bit resolution A/D converter Serial interface 11 channels 8 channels [R5F1026x (20-pin), R5F1027x (24-pin)] ● CSI: 2 channels/Simplified I2C: 2 channels/UART: 1 channel [R5F102Ax (30-pin)] ● CSI: 1 channel/Simplified I2C: 1 channel/UART: 1 channel ● CSI: 1 channel/Simplified I2C: 1 channel/UART: 1 channel ● CSI: 1 channel/Simplified I2C: 1 channel/UART: 1 channel [R5F1036x (20-pin), R5F1037x (24-pin)] ● CSI: 1 channel/Simplified I2C: 0 channel/UART: 1 channel [R5F103Ax (30-pin)] ● CSI: 1 channel/Simplified I2C: 0 channel/UART: 1 channel I2C bus 1 channel Multiplier and divider/multiply- ● 16 bits × 16 bits = 32 bits (unsigned or signed) accumulator ● 32 bits × 32 bits = 32 bits (unsigned) ● 16 bits × 16 bits + 32 bits = 32 bits (unsigned or signed) DMA controller Vectored interrupt Internal sources External 2 channels – 2 channels – 2 channels – 18 16 18 16 26 19 5 Key interrupt 6 6 10 – ● Reset by RESET pin Reset ● Internal reset by watchdog timer ● Internal reset by power-on-reset ● Internal reset by voltage detector ● Internal reset by illegal instruction execution Note ● Internal reset by RAM parity error ● Internal reset by illegal-memory access Power-on-reset circuit Voltage detector ● Power-on-reset: 1.51 V (TYP) ● Power-down-reset: 1.50 V (TYP) ● Rising edge : 1.88 to 4.06 V (12 stages) ● Falling edge : 1.84 to 3.98 V (12 stages) On-chip debug function Provided Power supply voltage VDD = 1.8 to 5.5 V Operating ambient temperature TA = –40 to +85°C (A: Consumer applications, D: Industrial applications), TA = –40 to +105°C (G: Industrial applications) Note The illegal instruction is generated when instruction code FFH is executed. Reset by the illegal instruction execution not issued by emulation with the in-circuit emulator or on-chip debug emulator. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 15 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) This chapter describes the following electrical specifications. Target products A: Consumer applications TA = -40 to +85°C R5F102xxAxx, R5F103xxAxx D: Industrial applications TA = -40 to +85°C R5F102xxDxx, R5F103xxDxx G: Industrial applications when TA = -40 to +105°C products is used in the range of TA = -40 to +85°C R5F102xxGxx Cautions 1. The RL78 microcontrollers have an on-chip debug function, which is provided for development and evaluation. Do not use the on-chip debug function in products designated for mass production, because the guaranteed number of rewritable times of the flash memory may be exceeded when this function is used, and product reliability therefore cannot be guaranteed. Renesas Electronics is not liable for problems occurring when the on-chip debug function is used. 2. The pins mounted depend on the product. Refer to 2.1 Port Functions to 2.2.1 Functions for each product in the RL78/G12 User’s Manual. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 16 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.1 Absolute Maximum Ratings Absolute Maximum Ratings (TA = 25°C) Parameter Supply Voltage Symbols Conditions VDD REGC terminal input voltageNote1 VIREGC REGC Ratings Unit –0.5 to + 6.5 V V –0.3 to +2 and –0.3 to VDD + 0.3 Note 2 Input Voltage VI1 Other than P60, P61 VI2 P60, P61 (N-ch open drain) Output Voltage VO Analog input voltage VAI IOH1 V –0.3 to 6.5 V –0.3 to VDD + 0.3 20-, 24-pin products: ANI0 to ANI3, ANI16 to ANI22 30-pin products: ANI0 to ANI3, ANI16 to ANI19 Output current, high –0.3 to VDD + 0.3Note 3 Note 3 –0.3 to VDD + 0.3 V V and –0.3 to AVREF(+)+0.3 Notes 3, 4 Per pin Other than P20 to P23 –40 mA Total of all pins All the terminals other than P20 to P23 –170 mA 20-, 24-pin products: P40 to P42 –70 mA 20-, 24-pin products: P00 to P03Note 5, P10 to P14 30-pin products: P10 to P17, P30, P31, P50, P51, P147 –100 mA P20 to P23 –0.5 mA 30-pin products: P00, P01, P40, P120 IOH2 Per pin Total of all pins Output current, low IOL1 IOL2 –2 mA Per pin Other than P20 to P23 40 mA Total of all pins All the terminals other than P20 to P23 170 mA 20-, 24-pin products: P40 to P42 30-pin products: P00, P01, P40, P120 70 mA 20-, 24-pin products: P00 to P03Note 5, P10 to P14, P60, P61 30-pin products: P10 to P17, P30, P31, P50, P51, P60, P61, P147 100 mA 1 mA Per pin Total of all pins P20 to P23 5 mA Operating ambient temperature TA –40 to +85 °C Storage temperature Tstg –65 to +150 °C Notes 1. 2. 3. 4. 5. 30-pin product only. Connect the REGC pin to VSS via a capacitor (0.47 to 1 µF). This value determines the absolute maximum rating of the REGC pin. Do not use it with voltage applied. Must be 6.5 V or lower. Do not exceed AVREF (+) + 0.3 V in case of A/D conversion target pin. 24-pin products only. Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Remarks 1. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. 2. AVREF(+) : + side reference voltage of the A/D converter. 3. VSS : Reference voltage R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 17 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.2 Oscillator Characteristics 2.2.1 X1 oscillator characteristics (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Resonator Conditions MIN. TYP. MAX. X1 clock oscillation Ceramic resonator / 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 frequency (fX)Note crystal oscillator 1.8 V ≤ VDD < 2.7 V 1.0 8.0 Note Unit MHz Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution time. Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the oscillator characteristics. Caution Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the X1 clock oscillation stabilization time using the oscillation stabilization time counter status register (OSTC) by the user. Determine the oscillation stabilization time of the OSTC register and the oscillation stabilization time select register (OSTS) after sufficiently evaluating the oscillation stabilization time with the resonator to be used. Remark When using the X1 oscillator, refer to 5.4 System Clock Oscillator in the RL78/G12 User’s Manual. 2.2.2 On-chip oscillator characteristics (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Oscillators High-speed on-chip oscillator Parameters Conditions MIN. fIH TYP. MAX. Unit 1 24 MHz -1.0 +1.0 % -1.5 +1.5 % +5.0 % clock frequency Notes 1, 2 High-speed on-chip oscillator R5F102 products clock frequency accuracy TA = –40 to –20°C R5F103 products Low-speed on-chip oscillator TA = –20 to +85°C -5.0 fIL 15 kHz clock frequency Low-speed on-chip oscillator -15 +15 % clock frequency accuracy Notes 1. High-speed on-chip oscillator frequency is selected by bits 0 to 3 of option byte (000C2H) and bits 0 to 2 of HOCODIV register. 2. This only indicates the oscillator characteristics. Refer to AC Characteristics for instruction execution time. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 18 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.3 DC Characteristics 2.3.1 Pin characteristics (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Output current, highNote 1 IOH1 (1/4) Conditions MIN. 20-, 24-pin products: Per pin for P00 to P03Note 4, TYP. MAX. Unit –10.0 mA Note 2 P10 to P14, P40 to P42 30-pin products: Per pin for P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V –30.0 mA Total of P40 to P42 2.7 V ≤ VDD < 4.0 V –6.0 mA 30-pin products: 1.8 V ≤ VDD < 2.7 V –4.5 mA 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V –80.0 mA Total of P00 to P03Note 4, P10 to P14 2.7 V ≤ VDD < 4.0 V –18.0 mA 30-pin products: 1.8 V ≤ VDD < 2.7 V –10.0 mA Total of all pins (When duty ≤ 70%Note 3) –100 mA Per pin for P20 to P23 –0.1 mA Total of all pins –0.4 mA Total of P00, P01, P40, P120 (When duty ≤ 70% Note 3) Total of P10 to P17, P30, P31, P50, P51, P147 (When duty ≤ 70% Note 3) IOH2 Notes 1. value of current at which the device operation is guaranteed even if the current flows from the VDD pin to an output pin. 2. 3. However, do not exceed the total current value. The output current value under conditions where the duty factor ≤ 70%. If duty factor > 70%: The output current value can be calculated with the following expression (where n represents the duty factor as a percentage). ● Total output current of pins = (IOH × 0.7)/(n × 0.01) Where n = 80% and IOH = –10.0 mA Total output current of pins = (–10.0 × 0.7)/(80 × 0.01)  –8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. 4. 24-pin products only. Caution P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41 for 24-pin products, and P00, P10 to P15, P17, and P50 for 30-pin products do not output high level in N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 19 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Output current, lowNote 1 Symbol IOL1 (2/4) Conditions MIN. TYP. MAX. Unit 20-, 24-pin products: 20.0 mA Per pin for P00 to P03Note 4, Note 2 P10 to P14, P40 to P42 30-pin products: Per pin for P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 15.0 Per pin for P60, P61 mA Note 2 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V 60.0 mA Total of P40 to P42 2.7 V ≤ VDD < 4.0 V 9.0 mA 30-pin products: 1.8 V ≤ VDD < 2.7 V 1.8 mA 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V 80.0 mA Total of P00 to P03Note 4, 2.7 V ≤ VDD < 4.0 V 27.0 mA 1.8 V ≤ VDD < 2.7 V 5.4 mA Total of all pins (When duty ≤ 70%Note 3) 140 mA Per pin for P20 to P23 0.4 mA Total of all pins 1.6 mA Total of P00, P01, P40, P120 (When duty ≤ 70% Note 3) P10 to P14, P60, P61 30-pin products: Total of P10 to P17, P30, P31, P50, P51, P60, P61, P147 (When duty ≤ 70% Note 3) IOL2 Notes 1. Value of current at which the device operation is guaranteed even if the current flows from an output pin to the VSS pin. 2. However, do not exceed the total current value. 3. The output current value under conditions where the duty factor ≤ 70%. If duty factor > 70%: The output current value can be calculated with the following expression (where n represents the duty factor as a percentage). ● Total output current of pins = (IOL × 0.7)/(n × 0.01) Where n = 80% and IOL = 10.0 mA Total output current of pins = (10.0 × 0.7)/(80 × 0.01)  8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. 4. Remark 24-pin products only. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 20 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Input voltage, high Symbol VIH1 (3/4) Conditions MIN. Normal input buffer 20-, 24-pin products: P00 to P03 TYP. MAX. Unit 0.8VDD VDD V Note 2 , P10 to P14, P40 to P42 30-pin products: P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 VIH2 4.0 V ≤ VDD ≤ 5.5 V 2.2 VDD V 20-, 24-pin products: P10, P11 3.3 V ≤ VDD < 4.0 V 2.0 VDD V 30-pin products: P01, P10, 1.5 VDD V 0.7VDD VDD V 0.7VDD 6.0 V 0.8VDD VDD V 0 0.2VDD V 4.0 V ≤ VDD ≤ 5.5 V 0 0.8 V 20-, 24-pin products: P10, P11 3.3 V ≤ VDD < 4.0 V 0 0.5 V 30-pin products: P01, P10, 0 0.32 V 0 0.3VDD V 0 0.3VDD V 0 0.2VDD V TTL input buffer 1.8 V ≤ VDD < 3.3 V P11, P13 to P17 Input voltage, low VIH3 P20 to P23 VIH4 P60, P61 Note 1 VIH5 P121, P122, P125 VIL1 Normal input buffer , P137, EXCLK, RESET 20-, 24-pin products: P00 to P03 Note 2 , P10 to P14, P40 to P42 30-pin products: P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 VIL2 TTL input buffer 1.8 V ≤ VDD < 3.3 V P11, P13 to P17 VIL3 P20 to P23 VIL4 P60, P61 VIL5 Output voltage, high VOH1 P121, P122, P125 Note 1 , P137, EXCLK, RESET 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V, P00 to P03Note 2, P10 to P14, IOH1 = –10.0 mA P40 to P42 4.0 V ≤ VDD ≤ 5.5 V, 30-pin products: IOH1 = –3.0 mA P00, P01, P10 to P17, P30, 2.7 V ≤ VDD ≤ 5.5 V, P31, P40, P50, P51, P120, P147 VDD–1.5 V VDD–0.7 V VDD–0.6 V VDD–0.5 V VDD–0.5 V IOH1 = –2.0 mA 1.8 V ≤ VDD ≤ 5.5 V, IOH1 = –1.5 mA VOH2 Notes 1. 2. P20 to P23 IOH2 = –100 µA 20, 24-pin products only. 24-pin products only. Caution The maximum value of VIH of pins P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41 for 24-pin products, and P00, P10 to P15, P17, and P50 for 30-pin products is VDD even in N-ch opendrain mode. High level is not output in the N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 21 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Output voltage, low Symbol VOL1 (4/4) Conditions MAX. Unit 1.3 V 0.7 V 0.6 V 0.4 V 0.4 V IOL2 = 400 µA 0.4 V 4.0 V ≤ VDD ≤ 5.5 V, 2.0 V 0.4 V 0.4 V 0.4 V VI = VDD 1 µA VI = VDD Input port or external clock input 1 µA 10 µA –1 µA –1 µA –10 µA 100 kΩ 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V, P00 to P03Note, P10 to P14, IOL1 = 20.0 mA P40 to P42 4.0 V ≤ VDD ≤ 5.5 V, 30-pin products: P00, P01, IOL1 = 8.5 mA P10 to P17, P30, P31, P40, 2.7 V ≤ VDD ≤ 5.5 V, P50, P51, P120, P147 MIN. TYP. IOL1 = 3.0 mA 2.7 V ≤ VDD ≤ 5.5 V, IOL1 = 1.5 mA 1.8 V ≤ VDD ≤ 5.5 V, IOL1 = 0.6 mA VOL2 P20 to P23 VOL3 P60, P61 IOL1 = 15.0 mA 4.0 V ≤ VDD ≤ 5.5 V, IOL1 = 5.0 mA 2.7 V ≤ VDD ≤ 5.5 V, IOL1 = 3.0 mA 1.8 V ≤ VDD ≤ 5.5 V, IOL1 = 2.0 mA Input leakage current, ILIH1 high Other than P121, P122 ILIH2 P121, P122 (X1, X2/EXCLK) When resonator connected Input leakage current, ILIL1 Other than P121, VI = VSS P122 low ILIL2 P121, P122 VI = VSS Input port or external (X1, X2/EXCLK) clock input When resonator connected On-chip pull-up RU 20-, 24-pin products: VI = VSS, input port 10 20 P00 to P03Note, P10 to P14, resistance P40 to P42, P125, RESET 30-pin products: P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 Note 24-pin products only. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 22 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.3.2 Supply current characteristics (1) 20-, 24-pin products (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol IDD1 Supply currentNote 1 (1/2) Conditions MIN. Note 3 Operating HS(High-speed fIH = 24 MHz mode Basic main) modeNote 4 VDD = 5.0 V 1.5 operation VDD = 3.0 V 1.5 Normal 3.3 5.0 3.3 5.0 fIH = 8 MHzNote 3 VDD = 5.0 V 2.5 3.7 VDD = 3.0 V 2.5 3.7 VDD = 3.0 V 1.2 1.8 main) modeNote 4 VDD = 2.0 V 1.2 1.8 HS(High-speed fMX = 20 MHzNote 2, Square wave input 2.8 4.4 main) modeNote4 VDD = 5.0 V Resonator connection 3.0 4.6 Square wave input 2.8 4.4 Resonator connection 3.0 4.6 Square wave input 1.8 2.6 Resonator connection 1.8 2.6 Square wave input 1.8 2.6 Resonator connection 1.8 2.6 Square wave input 1.1 1.7 Resonator connection 1.1 1.7 Square wave input 1.1 1.7 Resonator connection 1.1 1.7 Note 2 fMX = 20 MHz , VDD = 3.0 V Note 2 fMX = 10 MHz , VDD = 5.0 V Note 2 fMX = 10 MHz , VDD = 3.0 V LS(Low-speed Note 2 fMX = 8 MHz , main) modeNote 4 VDD = 3.0 V Note 2 fMX = 8 MHz , VDD = 2.0 V Unit mA VDD = 5.0 V fIH = 16 MHz Notes 1. MAX. operation VDD = 3.0 V Note 3 LS(Low-speed TYP. mA mA mA mA mA mA mA mA mA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. When high-speed on-chip oscillator clock is stopped. 3. When high-speed system clock is stopped 4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Temperature condition of the TYP. value is TA = 25°C. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 23 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (1) 20-, 24-pin products (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions Note 2 DD2 Supply (2/2) I current Note 1 HALT HS (High-speed mode main) modeNote 6 LS (Low-speed MIN. fIH = 24 MHz Note 4 fIH = 16 MHz Note 4 fIH = 8 MHz Note 4 main) modeNote 6 VDD = 5.0 V 440 1210 µA VDD = 3.0 V 440 1210 VDD = 5.0 V 400 950 VDD = 3.0 V 400 950 VDD = 3.0 V 270 542 VDD = 2.0 V 270 542 fMX = 20 MHzNote 3, Square wave input 280 1000 VDD = 5.0 V Resonator connection 450 1170 fMX = 20 MHzNote 3, Square wave input 280 1000 VDD = 3.0 V Resonator connection 450 1170 Square wave input 190 590 Resonator connection 260 660 Square wave input 190 590 Resonator connection 260 660 Square wave input 110 360 Resonator connection 150 416 Square wave input 110 360 Resonator connection 150 416 fMX = 10 MHz Note 3 , Note 3 , VDD = 3.0 V LS (Low-speed fMX = 8 MHz main) modeNote 6 VDD = 3.0 V fMX = 8 MHz Note 3 Note 3 , , VDD = 2.0 V Notes 1. Unit main) modeNote 6 VDD = 5.0 V I MAX. HS (High-speed fMX = 10 MHz Note 5 DD3 TYP. STOP TA = –40°C 0.19 0.50 mode TA = +25°C 0.24 0.50 TA = +50°C 0.32 0.80 TA = +70°C 0.48 1.20 TA = +85°C 0.74 2.20 µA µA µA µA µA µA µA µA µA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. During HALT instruction execution by flash memory. 3. When high-speed on-chip oscillator clock is stopped. 4. When high-speed system clock is stopped. 5. Not including the current flowing into the 12-bit interval timer and watchdog timer. 6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Except temperature condition of the TYP. value is TA = 25°C, other than STOP mode R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 24 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (2) 30-pin products (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Supply Symbol (1/2) Conditions Operating HS (High-speed IDD1 currentNote 1 mode MIN. Note 3 Basic fIH = 24 MHz main) modeNote 4 1.5 Normal VDD = 5.0 V operation VDD = 3.0 V 3.7 5.5 3.7 5.5 VDD = 5.0 V 2.7 4.0 VDD = 3.0 V 2.7 4.0 VDD = 3.0 V 1.2 1.8 VDD = 2.0 V 1.2 1.8 fIH = 16 MHz fIH = 8 MHzNote 3 main) mode Note 4 1.5 fMX = 20 MHzNote 2, Square wave input 3.0 4.6 main) mode Note 4 VDD = 5.0 V Resonator connection 3.2 4.8 Square wave input 3.0 4.6 Resonator connection 3.2 4.8 Square wave input 1.9 2.7 Resonator connection 1.9 2.7 Square wave input 1.9 2.7 Resonator connection 1.9 2.7 Square wave input 1.1 1.7 Resonator connection 1.1 1.7 Square wave input 1.1 1.7 Resonator connection 1.1 1.7 fMX = 20 MHz , VDD = 3.0 V Note 2 fMX = 10 MHz , VDD = 5.0 V Note 2 fMX = 10 MHz , VDD = 3.0 V Note 2 LS (Low-speed fMX = 8 MHz main) mode Note 4 VDD = 3.0 V , Note 2 fMX = 8 MHz , VDD = 2.0 V Unit mA HS (High-speed Note 2 Notes 1. MAX. VDD = 5.0 V operation VDD = 3.0 V Note 3 LS (Low-speed TYP. mA mA mA mA mA mA mA mA mA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. When high-speed on-chip oscillator clock is stopped. 3. When high-speed system clock is stopped 4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Temperature condition of the TYP. value is TA = 25°C. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 25 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (2) 30-pin products (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions Note 2 DD2 Supply (2/2) I currentNote 1 HALT HS (High-speed mode main) mode Note 6 LS (Low-speed MIN. fIH = 24 MHz Note 4 fIH = 16 MHz Note 4 fIH = 8 MHz Note 4 main) modeNote 6 VDD = 5.0 V 440 1280 µA VDD = 3.0 V 440 1280 VDD = 5.0 V 400 1000 VDD = 3.0 V 400 1000 VDD = 3.0 V 260 530 VDD = 2.0 V 260 530 fMX = 20 MHzNote 3, Square wave input 280 1000 VDD = 5.0 V Resonator connection 450 1170 fMX = 20 MHzNote 3, Square wave input 280 1000 VDD = 3.0 V Resonator connection 450 1170 Square wave input 190 600 Resonator connection 260 670 Square wave input 190 600 Resonator connection 260 670 Square wave input 95 330 Resonator connection 145 380 Square wave input 95 330 Resonator connection 145 380 fMX = 10 MHz Note 3 , Note 3 , VDD = 3.0 V LS (Low-speed fMX = 8 MHz main) modeNote 6 VDD = 3.0 V fMX = 8 MHz Note 3 , Note 3 , VDD = 2.0 V Notes 1. Unit main) modeNote 6 VDD = 5.0 V I MAX. HS (High-speed fMX = 10 MHz Note 5 DD3 TYP. STOP TA = –40°C 0.18 0.50 mode TA = +25°C 0.23 0.50 TA = +50°C 0.30 1.10 TA = +70°C 0.46 1.90 TA = +85°C 0.75 3.30 µA µA µA µA µA µA µA µA µA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. During HALT instruction execution by flash memory. 3. When high-speed on-chip oscillator clock is stopped. 4. When high-speed system clock is stopped. 5. Not including the current flowing into the 12-bit interval timer and watchdog timer. 6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Except STOP mode, temperature condition of the TYP. value is TA = 25°C. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 26 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (3) Peripheral functions (Common to all products) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Low-speed Symbol IFIL Conditions MIN. Note 1 TYP. MAX. Unit 0.20 µA 0.02 µA 0.22 µA onchip oscillator operating current 12-bit interval ITMKA timer operating Notes 1, 2, 3 current Watchdog timer IWDT operating current Notes 1, 2, 4 A/D converter operating current IADCNotes 1, 5 fIL = 15 kHz When conversion at maximum speed Normal mode, AVREFP = VDD = 5.0 V 1.30 1.70 mA Low voltage mode, AVREFP = VDD = 3.0 V 0.50 0.70 mA A/D converter IADREF Note 1 reference voltage operating current 75.0 µA Temperature sensor operating current ITMPS Note 1 75.0 µA LVD operating ILVD Notes 1, 6 0.08 µA IFSP Notes 1, 8 2.00 12.20 mA IBGO Notes 1, 7 2.00 12.20 mA The mode is performed Note 9 0.50 0.60 mA The A/D conversion operations are 1.20 1.44 mA 0.70 0.84 mA current Selfprogramming operating current BGO operating current ISNOZ Note 1 SNOOZE ADC operation operating current performed, Low voltage mode, AVREFP = VDD = 3.0 V CSI/UART operation Notes 1. Current flowing to the VDD. 2. When high speed on-chip oscillator and high-speed system clock are stopped. 3. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3, and IFIL and ITMKA when the 12-bit interval timer operates. 4. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer operates. 5. Current flowing only to the A/D converter. The current value of the RL78 microcontrollers is the sum of IDD1 or IDD2 and IADC when the A/D converter operates in an operation mode or the HALT mode. 6. Current flowing only to the LVD circuit. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and ILVD when the LVD circuit operates. 7. Current flowing only during data flash rewrite. 8. Current flowing only during self programming. 9. For shift time to the SNOOZE mode, see 17.3.3 SNOOZE mode in the RL78/G12 User’s Manual. Remarks 1. fIL: Low-speed on-chip oscillator clock frequency 2. Temperature condition of the TYP. value is TA = 25°C R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 27 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.4 AC Characteristics (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Items Instruction cycle (minimum Symbol TCY instruction execution time) Conditions MIN. TYP. MAX. Unit Main system HS (High- 2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs clock (fMAIN) speed main) 2.4 V ≤ VDD < 2.7 V 0.0625 1 µs operation mode 1.8 V ≤ VDD ≤ 5.5 V 0.125 1 µs LS (Lowspeed main) mode During self HS (High- 2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs programming speed main) 2.4 V ≤ VDD < 2.7 V 0.0625 1 µs 1.8 V ≤ VDD ≤ 5.5 V 0.125 1 µs 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz 2.4 V ≤ VDD < 2.7 V 1.0 16.0 MHz 1.8 V ≤ VDD < 2.4 V 1.0 8.0 MHz 2.7 V ≤ VDD ≤ 5.5 V 24 ns 2.4 V ≤ VDD < 2.7 V 30 ns 1.8 V ≤ VDD < 2.4 V 60 ns 1/fMCK + ns mode LS (Lowspeed main) mode External main system clock fEX frequency External main system clock tEXH, tEXL input high-level width, lowlevel width TI00 to TI07 input high-level tTIH, tTIL width, low-level width TO00 to TO07 output 10 fTO frequency PCLBUZ0, or PCLBUZ1 fPCL output frequency INTP0 to INTP5 input high- 4.0 V ≤ VDD ≤ 5.5 V 12 MHz 2.7 V ≤ VDD < 4.0 V 8 MHz 1.8 V ≤ VDD < 2.7 V 4 MHz 4.0 V ≤ VDD ≤ 5.5 V 16 MHz 2.7 V ≤ VDD < 4.0 V 8 MHz 1.8 V ≤ VDD < 2.7 V 4 MHz tINTH, tINTL 1 µs tKR 250 ns tRSL 10 µs level width, low-level width KR0 to KR9 input available width RESET low-level width Remark fMCK: Timer array unit operation clock frequency (Operation clock to be set by the timer clock select register 0 (TPS0) and the CKS0n bit of timer mode register 0n (TMR0n). n: Channel number (n = 0 to 7)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 28 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) Minimum Instruction Execution Time during Main System Clock Operation TCY vs VDD (HS (high-speed main) mode) 10 Cycle time TCY [µs] 1.0 When the high-speed on-chip oscillator clock is selected During self programming When high-speed system clock is selected 0.1 0.0625 0.04167 0.01 0 1.0 2.0 3.0 2.4 2.7 4.0 5.0 6.0 5.5 Supply voltage VDD [V] TCY vs VDD (LS (low-speed main) mode) Cycle time TCY [µs] 10 1.0 When the high-speed on-chip oscillator clock is selected During self programming When high-speed system clock is selected 0.125 0.1 0.01 0 1.0 2.0 1.8 3.0 4.0 5.0 5.5 6.0 Supply voltage VDD [V] R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 29 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) AC Timing Test Point VIH/VOH VIL/VOL VIH/VOH Test points VIL/VOL External Main System Clock Timing 1/fEX tEXL tEXH EXCLK TI/TO Timing tTIH tTIL TI00 to TI07 1/fTO TO00 to TO07 Interrupt Request Input Timing tINTH tINTL INTP0 to INTP5 Key Interrupt Input Timing tKR KR0 to KR9 RESET Input Timing tRSL RESET R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 30 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.5 Peripheral Functions Characteristics AC Timing Test Point VIH/VOH VIH/VOH Test points VIL/VOL VIL/VOL 2.5.1 Serial array unit (1) During communication at same potential (UART mode) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed LS (low-speed main) Mode main) Mode MIN. Transfer rate Note 1 Theoretical value of the maximum transfer rate fCLK = fMCK Notes 1. 2. MAX. MIN. Unit MAX. fMCK/6 fMCK/6 bps 4.0 1.3 Mbps Note 2 Transfer rate in the SNOOZE mode is 4800 bps only. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) LS (low-speed main) mode: 8 MHz (1.8 V ≤ VDD ≤ 5.5 V) Caution Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). UART mode connection diagram (during communication at same potential) TxDq Rx RL78 microcontroller User's device RxDq Tx UART mode bit width (during communication at same potential) (reference) 1/Transfer rate High-/Low-bit width Baud rate error tolerance TxDq RxDq Remarks 1. 2. q: UART number (q = 0 to 2), g: PIM, POM number (g = 0, 1) fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 31 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (2) During communication at same potential (CSI mode) (master mode, SCK00... internal clock output, corresponding CSI00 only) (TA = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) LS (low-speed main) Mode Mode MIN. tKCY1 tKCY1 ≥ 2/fCLK SCK00 high-/low- tKH1, level width tKL1 SI00 setup time tSIK1 SCK00 cycle time (to SCK00↑) Note 1 MIN. MAX. 83.3 250 ns 4.0 V ≤ VDD ≤ 5.5 V tKCY1/2–7 tKCY1/2–50 ns 2.7 V ≤ VDD ≤ 5.5 V tKCY1/2–10 tKCY1/2–50 ns 4.0 V ≤ VDD ≤ 5.5 V 23 110 ns 2.7 V ≤ VDD ≤ 5.5 V 33 110 ns 10 10 ns tKSI1 SI00 hold time MAX. Unit (from SCK00↑) Note 2 tKSO1 Delay time from C = 20 pF Note 4 10 10 ns SCK00↓ to SO00 output Note 3 Notes 1. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1. The SI00 setup time becomes “to SCK00↓” when DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0. 2. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1. The SI00 hold time becomes “from SCK00↓” when DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0. 3. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1. The delay time to SO00 output becomes 4. C is the load capacitance of the SCK00 and SO00 output lines. “from SCK00↑” when DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0. Caution Select the normal input buffer for the SI00 pin and the normal output mode for the SO00 and SCK00 pins by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). Remarks 1. This specification is valid only when CSI00’s peripheral I/O redirect function is not used. 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register 0 (SPS0) and the CKS00 bit of serial mode register 00 (SMR00).) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 32 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (3) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed LS (low-speed main) Mode main) Mode MIN. SCKp cycle time tKCY1 SCKp high-/low-level width SIp setup time (to SCKp↑) MIN. MAX. 2.7 V ≤ VDD ≤ 5.5 V 167 500 ns 2.4 V ≤ VDD ≤ 5.5 V 250 500 ns 1.8 V ≤ VDD ≤ 5.5 V – 500 ns tKH1, 4.0 V ≤ VDD ≤ 5.5 V tKCY1/2–12 tKCY1/2–50 ns tKL1 2.7 V ≤ VDD ≤ 5.5 V tKCY1/2–18 tKCY1/2–50 ns 2.4 V ≤ VDD ≤ 5.5 V tKCY1/2–38 tKCY1/2–50 ns 1.8 V ≤ VDD ≤ 5.5 V – tKCY1/2–50 ns 4.0 V ≤ VDD ≤ 5.5 V 44 110 ns 2.7 V ≤ VDD ≤ 5.5 V 44 110 ns 2.4 V ≤ VDD ≤ 5.5 V 75 110 ns 1.8 V ≤ VDD ≤ 5.5 V – 110 ns 19 19 ns tSIK1 Note 1 SIp hold time tKCY1 ≥ 4/fCLK MAX. Unit tKSI1 (from SCKp↑) Note 2 Delay time from SCKp↓ to SOp output tKSO1 C = 30 pF Note 4 25 25 ns Note 3 Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output 4. C is the load capacitance of the SCKp and SOp output lines. becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Caution Select the normal input buffer for the SIp pin and the normal output mode for the SOp and SCKp pins by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1, POM4). Remarks 1. p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: “1, 3” is only for the R5F102 products) 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: “1, 3” is only for the R5F102 products.)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 33 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (4) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed LS (low-speed main) main) Mode Mode MIN. SCKp cycle time Note 5 tKCY2 4.0 V ≤ VDD ≤ 5.5 V 2.7 V ≤ VDD ≤ 5.5 V 20 MHz < fMCK MAX. MIN. Unit MAX. 8/fMCK – ns fMCK ≤ 20 MHz 6/fMCK 6/fMCK ns 16 MHz < fMCK 8/fMCK – ns fMCK ≤ 16 MHz 6/fMCK 6/fMCK ns 6/fMCK 6/fMCK ns and 500 and 500 – 6/fMCK 2.4 V ≤ VDD ≤ 5.5 V 1.8 V ≤ VDD ≤ 5.5 V ns and 750 SCKp high-/low-level tKH2, 4.0 V ≤ VDD ≤ 5.5 V tKCY2/2–7 tKCY2/2–7 ns width tKL2 2.7 V ≤ VDD ≤ 5.5 V tKCY2/2–8 tKCY2/2–8 ns 2.4 V ≤ VDD ≤ 5.5 V tKCY2/2–18 tKCY2/2–18 ns 1.8 V ≤ VDD ≤ 5.5 V – tKCY2/2–18 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 20 1/fMCK + 30 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 30 1/fMCK + 30 ns 1.8 V ≤ VDD ≤ 5.5 V – 1/fMCK + 30 ns 1/fMCK + 31 1/fMCK + 31 ns tSIK2 SIp setup time (to SCKp↑) Note 1 tKSI2 SIp hold time (from SCKp↑) Note 2 Delay time from tKSO2 C = 30 pF Note 4 2.7 V ≤ VDD ≤ 5.5 V SCKp↓ to SOp output Note 3 2.4 V ≤ VDD ≤ 5.5 V 1.8 V ≤ VDD ≤ 5.5 V 2/fMCK + 2/fMCK + 44 110 2/fMCK + 2/fMCK + 75 110 – 2/fMCK + ns ns ns 110 Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output 4. C is the load capacitance of the SOp output lines. 5. Transfer rate in the SNOOZE mode: MAX. 1 Mbps. becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Caution Select the normal input buffer for the SIp and SCKp pins and the normal output mode for the SOp pin by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1, POM4). R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 34 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) CSI mode connection diagram (during communication at same potential) SCKp RL78 microcontroller SCK SIp SO User's device SOp SI CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) t KCY1, 2 t KL1, 2 t KH1, 2 SCKp t SIK1, 2 SIp t KSI1, 2 Input data t KSO1, 2 SOp Output data CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY1, 2 tKH1, 2 tKL 1, 2 SCKp tSIK1, 2 SIp tKSI1, 2 Input data tKSO1, 2 SOp Output data (Remarks are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 35 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) Remarks 1. p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: “1, 3” is only for the R5F102 products.) 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: “1, 3” is only for the R5F102 products.)) (5) During communication at same potential (simplified I2C mode) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode Unit LS (low-speed main) Mode MIN. SCLr clock frequency fSCL 1.8 V ≤ VDD ≤ 5.5 V, MAX. 400 Note 1 kHz 300 Note 1 kHz Cb = 100 pF, Rb = 3 kΩ 1.8 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Hold time when SCLr = “L” tLOW 1.8 V ≤ VDD ≤ 5.5 V, 1150 ns 1550 ns 1150 ns 1550 ns 1/fMCK + 145 Note 2 ns 1/fMCK + 230 Note 2 ns Cb = 100 pF, Rb = 3 kΩ 1.8 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Hold time when SCLr = “H” tHIGH 1.8 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 1.8 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Data setup time (reception) tSU:DAT 1.8 V ≤ VDD ≤ 5.5 V, Cb = 100 pF, Rb = 3 kΩ 1.8 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Data hold time (transmission) tHD:DAT 1.8 V ≤ VDD ≤ 5.5 V, 0 355 ns 0 405 ns Cb = 100 pF, Rb = 3 kΩ 1.8 V ≤ VDD < 2.7 V, Cb = 100 pF, Rb = 5 kΩ Notes 1. 2. The value must be equal to or less than fMCK/4. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”. Caution Select the N-ch open drain output (VDD tolerance) mode for SDAr by using port output mode register h (POMh). (Remarks are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 36 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) Simplified I2C mode connection diagram (during communication at same potential) VDD Rb SDAr SDA RL78 microcontroller User's device SCLr SCL Simplified I2C mode serial transfer timing (during communication at same potential) 1/fSCL tLOW tHIGH SCLr SDAr tHD:DAT Remarks 1. tSU:DAT Rb [Ω]:Communication line (SDAr) pull-up resistance Cb [F]: Communication line (SCLr, SDAr) load capacitance 2. r: IIC number (r = 00, 01, 11, 20), h: = POM number (h = 0, 1, 4, 5) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (0, 1, 3)) 4. Simplified I2C mode is supported only by the R5F102 products. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 37 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Transfer rate Note4 Conditions Reception HS (high-speed main) Mode LS (low-speed main) Mode MIN. MIN. MAX. Unit MAX. 4.0 V ≤ VDD ≤ 5.5 V, fMCK/6 fMCK/6 2.7 V ≤ Vb ≤ 4.0 V Note1 Note1 4.0 1.3 Mbps 2.7 V ≤ VDD < 4.0 V, fMCK/6 fMCK/6 bps 2.3 V ≤ Vb ≤ 2.7 V Note1 Note1 4.0 1.3 Mbps bps Theoretical value of the maximum transfer rate fMCK = fCLKNote3 Theoretical value of the maximum transfer rate bps fMCK = fCLKNote3 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V fMCK/6 fMCK/6 Notes1, 2 Notes1, 2 4.0 1.3 Mbps Note4 Note4 bps Mbps Theoretical value of the maximum transfer rate fMCK = fCLKNote3 Transmission 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V Theoretical value of the maximum transfer rate Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V 2.7 V ≤ VDD < 4.0 V, 2.8 2.8 Note5 Note5 Note6 Note6 bps Mbps 2.3 V ≤ Vb ≤ 2.7 V, Theoretical value of the maximum transfer rate Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V 1.2 1.2 Note7 Note7 Notes 2, 8 Notes 2, 8 bps 0.43 0.43 Mbps Note9 Note9 Theoretical value of the maximum transfer rate Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V Notes 1. Transfer rate in the SNOOZE mode is 4800 bps only. 2. Use it with VDD ≥ Vb. 3. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) LS (low-speed main) mode: 4. 8 MHz (1.8 V ≤ VDD ≤ 5.5 V) The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V 1 Maximum transfer rate = 2.2 {–Cb × Rb × ln (1 – Vb )} × 3 [bps] 1 2.2 Transfer rate × 2 – {–Cb × Rb × ln (1 – Vb )} Baud rate error (theoretical value) = 1 ( Transfer rate ) × Number of transferred bits × 100 [%] * This value is the theoretical value of the relative difference between the transmission and reception sides. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 38 of 108 RL78/G12 5. 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 4 above to calculate the maximum transfer rate under conditions of the customer. 6. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 2.7 V ≤ VDD < 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V 1 Maximum transfer rate = 2.0 {–Cb × Rb × ln (1 – Vb )} × 3 [bps] 2.0 1 Transfer rate × 2 – {–Cb × Rb × ln (1 – Vb )} Baud rate error (theoretical value) = 1 ( Transfer rate ) × Number of transferred bits × 100 [%] * This value is the theoretical value of the relative difference between the transmission and reception sides. 7. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 6 above to calculate the maximum transfer rate under conditions of the customer. 8. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V 1 Maximum transfer rate = 1.5 {–Cb × Rb × ln (1 – Vb )} × 3 [bps] 1.5 1 Transfer rate × 2 – {–Cb × Rb × ln (1 – Vb )} Baud rate error (theoretical value) = 1 ( Transfer rate ) × Number of transferred bits × 100 [%] * This value is the theoretical value of the relative difference between the transmission and reception sides. 9. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 8 above to calculate the maximum transfer rate under conditions of the customer. Caution Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 39 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) UART mode connection diagram (during communication at different potential) Vb Rb TxDq Rx RL78 microcontroller User's device RxDq Tx UART mode bit width (during communication at different potential) (reference) 1/Transfer rate Low-bit width High-bit width Baud rate error tolerance TxDq 1/Transfer rate High-/Low-bit width Baud rate error tolerance RxDq Remarks 1. Rb[Ω]: Communication line (TxDq) pull-up resistance, Cb[F]: Communication line (TxDq) load capacitance, Vb[V]: Communication line voltage 2. q: UART number (q = 0 to 2), g: PIM and POM number (g = 0, 1) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) 4. UART0 of the 20- and 24-pin products supports communication at different potential only when the peripheral I/O redirection function is not used. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 40 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (7) Communication at different potential (2.5 V, 3 V) (CSI mode) (master mode, SCK00... internal clock output, corresponding CSI00 only) (TA = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed LS (low-speed main) Mode main) Mode MIN. SCK00 cycle time tKCY1 tKCY1 ≥ 2/fCLK 4.0 V ≤ VDD ≤ 5.5 V, MAX. MIN. Unit MAX. 200 1150 ns 300 1150 ns tKCY1/2 – tKCY1/2 – ns 50 50 tKCY1/2 – tKCY1/2 – 120 120 tKCY1/2 – tKCY1/2 – 7 50 tKCY1/2 – tKCY1/2 – Cb = 20 pF, Rb = 2.7 kΩ 10 50 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 58 479 ns 121 479 ns 10 10 ns 10 10 ns 2.7 V ≤ Vb ≤ 4.0 V, Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ SCK00 high-level width tKH1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ SCK00 low-level width tKL1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, SI00 setup time tSIK1 (to SCK00↑) Note 1 ns ns ns Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ SI00 hold time tKSI1 (from SCK00↑) Note 1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ Delay time from SCK00↓ tKSO1 to SO00 output Note 1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 60 60 ns 130 130 ns Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ SI00 setup time tSIK1 (to SCK00↓) Note 2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 23 110 ns 33 110 ns 10 10 ns 10 10 ns Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ SI00 hold time tKSI1 (from SCK00↓) Note 2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ Delay time from SCK00↑ tKSO1 to SO00 output Note 2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 10 10 ns 10 10 ns Cb = 20 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 20 pF, Rb = 2.7 kΩ (Notes, Caution, and Remarks are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 41 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) Notes 1. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1 2. When DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0. Caution Select the TTL input buffer for the SI00 pin and the N-ch open drain output (VDD tolerance) mode for the SO00 pin and SCK00 pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. Remarks 1. Rb [Ω]:Communication line (SCK00, SO00) pull-up resistance, Cb [F]: Communication line (SCK00, SO00) load capacitance, Vb [V]: Communication line voltage 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register 0 (SPS0) and the CKS00 bit of serial mode register 00 (SMR00).) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 42 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (1/3) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) LS (low-speed main) Mode Mode MIN. SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK 4.0 V ≤ VDD ≤ 5.5 V, MAX. MIN. Unit MAX. 300 1150 ns 500 1150 ns 1150 1150 ns tKCY1/2 –75 tKCY1/2–75 ns tKCY1/2 –170 tKCY1/2–170 ns tKCY1/2 –458 tKCY1/2–458 ns tKCY1/2 –12 tKCY1/2–50 ns tKCY1/2 –18 tKCY1/2–50 ns tKCY1/2 –50 tKCY1/2–50 ns 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note , Cb = 30 pF, Rb = 5.5 kΩ SCKp high-level width tKH1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note, Cb = 30 pF, Rb = 5.5 kΩ SCKp low-level width tKL1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note, Cb = 30 pF, Rb = 5.5 kΩ Note Use it with VDD ≥ Vb. Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. CSI01 and CSI11 cannot communicate at different potential. Remarks 1. Rb [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp) load capacitance, Vb [V]: Communication line voltage 2. p: CSI number (p = 00, 20) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 43 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (2/3) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed LS (low-speed main) Mode main) Mode MIN. tSIK1 SIp setup time (to SCKp↑) Note 1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, MAX. MIN. Unit MAX. 81 479 ns 177 479 ns 479 479 ns 19 19 ns 19 19 ns 19 19 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 30 pF, Rb = 5.5 kΩ tKSI1 SIp hold time (from SCKp↑) Note 1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 30 pF, Rb = 5.5 kΩ tKSO1 Delay time from 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 100 100 ns 195 195 ns 483 483 ns Cb = 30 pF, Rb = 1.4 kΩ SCKp↓ to SOp output Note 1 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 30 pF, Rb = 5.5 kΩ Notes 1. 2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. Use it with VDD ≥ Vb. (Cautions and Remarks are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 44 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (3/3) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed LS (low-speed main) Mode main) Mode MIN. 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, tSIK1 SIp setup time (to SCKp↓) Note 1 MAX. MIN. Unit MAX. 44 110 ns 44 110 ns 110 110 ns 19 19 ns 19 19 ns 19 19 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 30 pF, Rb = 5.5 kΩ 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, tKSI1 SIp hold time (from SCKp↓) Note 1 Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 30 pF, Rb = 5.5 kΩ 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, tKSO1 Delay time from 25 25 ns 25 25 ns 25 25 ns Cb = 30 pF, Rb = 1.4 kΩ SCKp↑ to SOp output Note 1 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 30 pF, Rb = 5.5 kΩ Notes 1. 2. When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Use it with VDD ≥ Vb. Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. Remarks 1. CSI01 and CSI11 cannot communicate at different potential. Rb [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp) load capacitance, Vb [V]: Communication line voltage 2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0) CSI mode connection diagram (during communication at different potential) Vb Vb Rb SCKp RL78 microcontroller R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Rb SCK SIp SO SOp SI User's device Page 45 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1) t KCY1 t KL1 t KH1 SCKp t SIK1 SIp t KSI1 Input data t KSO1 SOp Output data CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) t KCY1 t KL1 t KH1 SCKp t SIK1 SIp t KSI1 Input data t KSO1 SOp R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Output data Page 46 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (9) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) LS (low-speed main) Mode Mode MIN. SCKp cycle time Note 1 tKCY2 20 MHz < fMCK ≤ 24 MHz 12/fMCK 8 MHz < fMCK ≤ 20 MHz 10/fMCK – ns 4 MHz < fMCK ≤ 8 MHz 8/fMCK 16/fMCK ns fMCK ≤ 4 MHz 6/fMCK 10/fMCK ns 2.7 V ≤ VDD < 4.0 V, 20 MHz < fMCK ≤ 24 MHz 16/fMCK – ns 2.3 V ≤ Vb ≤ 2.7 V 16 MHz < fMCK ≤ 20 MHz 14/fMCK – ns 8 MHz < fMCK ≤ 16 MHz 12/fMCK – ns 4 MHz < fMCK ≤ 8 MHz 8/fMCK 16/fMCK ns fMCK ≤ 4 MHz 6/fMCK 10/fMCK ns 1.8 V ≤ VDD < 3.3 V, 20 MHz < fMCK ≤ 24 MHz 36/fMCK – ns 1.6 V ≤ Vb ≤ 2.0 V 16 MHz < fMCK ≤ 20 MHz 32/fMCK – ns 8 MHz < fMCK ≤ 16 MHz 26/fMCK – ns 4 MHz < fMCK ≤ 8 MHz 16/fMCK 16/fMCK ns fMCK ≤ 4 MHz 10/fMCK 10/fMCK ns tKCY2/2 – 12 tKCY2/2 – 50 ns tKCY2/2 – 18 tKCY2/2 – 50 ns tKCY2/2 – 50 tKCY2/2 – 50 ns tKH2, 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V width tKL2 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V tSIK2 SIp hold time MAX. 4.0 V ≤ VDD ≤ 5.5 V, SCKp high-/low-level (to SCKp↑) Note 3 MIN. 2.7 V ≤ Vb ≤ 4.0 V Note 2 SIp setup time MAX. Unit Note 2 – ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ VDD ≤ 4.0 V 1/fMCK + 20 1/fMCK + 30 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V 1/fMCK + 20 1/fMCK + 30 ns 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ VDD ≤ 2.0 V Note 2 1/fMCK + 30 1/fMCK + 30 ns 1/fMCK + 31 1/fMCK + 31 ns tKSI2 (from SCKp↑) Note 4 Delay time from tKSO2 SCKp↓ to SOp 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ output Note 5 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2, Cb = 30 pF, Rb = 5.5 kΩ Notes 1. 2/fMCK + 2/fMCK + 120 573 2/fMCK + 2/fMCK + 214 573 2/fMCK + 2/fMCK + 573 573 ns ns ns Transfer rate in the SNOOZE mode: MAX. 1 Mbps 2. Use it with VDD ≥ Vb. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 5. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Cautions 1. Select the TTL input buffer for the SIp and SCKp pins and the N-ch open drain output (VDD tolerance) mode for the SOp pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. CSI01 and CSI11 cannot communicate at different potential. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 47 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) CSI mode connection diagram (during communication at different potential) Vb Rb SCKp RL78 microcontroller SCK SIp SO SOp SI User's device Remarks 1. Rb [Ω]: Communication line (SOp) pull-up resistance, Cb [F]: Communication line (SOp) load capacitance, Vb [V]: Communication line voltage 2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 10)) CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) t KCY2 t KL2 t KH2 SCKp t SIK2 t KSI2 Input data SIp t KSO2 SOp R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Output data Page 48 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) t KCY2 t KL2 t KH2 SCKp t SIK2 t KSI2 Input data SIp t KSO2 SOp Remark Output data p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 49 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (10) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed LS (low-speed main) Mode main) Mode MIN. SCLr clock frequency fSCL 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, MAX. MIN. Unit MAX. Note1 300Note1 kHz 400Note1 300Note1 kHz 300Note1 300Note1 kHz 400 Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2 Cb = 100 pF, Rb = 5.5 kΩ Hold time when SCLr = “L” tLOW 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 1150 1550 ns 1150 1550 ns 1550 1550 ns 675 610 ns 600 610 ns 610 610 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 1/fMCK 1/fMCK ns Cb = 100 pF, Rb = 2.8 kΩ + 190 + 190 Note3 Note3 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, 1/fMCK 1/fMCK Cb = 100 pF, Rb = 2.7 kΩ + 190 + 190 Note3 Note3 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2 1/fMCK 1/fMCK Cb = 100 pF, Rb = 5.5 kΩ + 190 + 190 Note3 Note3 Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2 Cb = 100 pF, Rb = 5.5 kΩ Hold time when SCLr = “H” tHIGH 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2 Cb = 100 pF, Rb = 5.5 kΩ Data setup time (reception) Data hold time tSU:DAT tHD:DAT 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, ns ns 0 355 0 355 ns 0 355 0 355 ns 0 405 0 405 ns Cb = 100 pF, Rb = 2.8 kΩ (transmission) 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2 Cb = 100 pF, Rb = 5.5 kΩ Notes 1. The value must be equal to or less than fMCK/4. 2. Use it with VDD ≥ Vb. 3. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”. Cautions 1. Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and the N-ch open drain output (VDD tolerance) mode for the SCLr pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. IIC01 and IIC11 cannot communicate at different potential. (Remarks are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 50 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) Simplified I2C mode connection diagram (during communication at different potential) Vb Vb Rb Rb SDAr SDA RL78 microcontroller User's device SCLr SCL Simplified I2C mode serial transfer timing (during communication at different potential) 1/fSCL t LOW t HIGH SCLr SDAr t HD : DAT Remarks 1. t SU : DAT Rb [Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb [F]: Communication line (SDAr, SCLr) load capacitance, Vb [V]: Communication line voltage 2. r: IIC Number (r = 00, 20) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0,1), n: Channel number (n = 0)) 4. Simplified I2C mode is supported only by the R5F102 products. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 51 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.5.2 Serial interface IICA (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) mode Unit LS (low-speed main) mode Standard Mode MIN. SCLA0 clock frequency fSCL MAX. Fast mode: fCLK ≥ 3.5 MHz Normal mode: fCLK ≥ 1 MHz 0 Fast Mode MIN. MAX. 0 400 100 kHz kHz Setup time of restart condition tSU:STA 4.7 0.6 µs Hold timeNote 1 tHD:STA 4.0 0.6 µs Hold time when SCLA0 = “L” tLOW 4.7 1.3 µs Hold time when SCLA0 = “H” tHIGH 4.0 0.6 µs tSU:DAT 250 100 ns tHD:DAT 0 Setup time of stop condition tSU:STO 4.0 0.6 µs Bus-free time tBUF 4.7 1.3 µs Data setup time (reception) Data hold time (transmission) Notes 1. 2. Note 2 3.45 0 0.9 µs The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. Caution Only in the 30-pin products, the values in the above table are applied even when bit 2 (PIOR2) in the peripheral I/O redirection register (PIOR) is 1. At this time, the pin characteristics (IOH1, IOL1, VOH1, VOL1) must satisfy the values in the redirect destination. Remark The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Normal mode: Fast mode: Cb = 400 pF, Rb = 2.7 kΩ Cb = 320 pF, Rb = 1.1 kΩ IICA serial transfer timing t LOW tR SCLA0 tHD:DAT tHD:STA t HIGH tF tSU:STA tHD:STA tSU:STO tSU:DAT SDAA0 t BUF Stop condition Start condition R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Restart condition Stop condition Page 52 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.6 Analog Characteristics 2.6.1 A/D converter characteristics Classification of A/D converter characteristics Input channel Reference Voltage Reference voltage (+) = AVREFP Reference voltage (+) = VDD Reference voltage (+) = VBGR Reference voltage (–) = AVREFM Reference voltage (–) = VSS Reference voltage (–) = AVREFM ANI0 to ANI3 Refer to 2.6.1 (1). Refer to 2.6.1 (3). Refer to 2.6.1 (4). ANI16 to ANI22 Refer to 2.6.1 (2). Internal reference voltage Refer to 2.6.1 (1). – Temperature sensor output voltage (1) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1 (ADREFM = 1), target pin: ANI2, ANI3, internal reference voltage, and temperature sensor output voltage (TA = –40 to +85°C, 1.8 V ≤ AVREFP ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) = AVREFM = 0 V) Parameter Symbol Resolution RES Overall errorNote 1 AINL Conversion time tCONV Conditions Full-scale errorNotes 1, 2 Integral linearity errorNote 1 Differential linearity error EZS EFS ILE DLE Note 1 Analog input voltage VAIN TYP. MAX. 10 bit 1.2 ±3.5 LSB 1.2 ±7.0 Note 4 LSB 39 µs 8 10-bit resolution AVREFP = VDD Note 3 10-bit resolution Target pin: ANI2, ANI3 10-bit resolution Target pin: Internal reference voltage, and temperature sensor output voltage (HS (high-speed main) mode) Zero-scale errorNotes 1, 2 MIN. Unit 3.6 V ≤ VDD ≤ 5.5 V 2.125 2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs 1.8 V ≤ VDD ≤ 5.5 V 17 39 µs 57 95 µs 3.6 V ≤ VDD ≤ 5.5 V 2.375 39 µs 2.7 V ≤ VDD ≤ 5.5 V 3.5625 39 µs 2.4 V ≤ VDD ≤ 5.5 V 17 39 µs ±0.25 %FSR 10-bit resolution AVREFP = VDD Note 3 ±0.50 10-bit resolution AVREFP = VDD Note 3 ±0.25 ±2.5 ±5.0 10-bit resolution AVREFP = VDD Note 3 Internal reference voltage (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) Temperature sensor output voltage (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) %FSR %FSR ±0.50 Note 4 %FSR 10-bit resolution AVREFP = VDD Note 3 ANI2, ANI3 Note 4 Note 4 ±1.5 ±2.0 0 Note 4 AVREFP VBGR Note 5 VTMPS25 Note 5 LSB LSB LSB LSB V V V (Notes are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 53 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. When AVREFP < VDD, the MAX. values are as follows. Overall error: Add ±1.0 LSB to the MAX. value when AVREFP = VDD. Zero-scale error/Full-scale error: Add ±0.05%FSR to the MAX. value when AVREFP = VDD. Integral linearity error/ Differential linearity error: Add ±0.5 LSB to the MAX. value when AVREFP = VDD. 4. Values when the conversion time is set to 57 µs (min.) and 95 µs (max.). 5. Refer to 2.6.2 Temperature sensor/internal reference voltage characteristics. (2) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1 (ADREFM = 1), target pin: ANI16 to ANI22 (TA = –40 to +85°C, 1.8 V ≤ AVREFP ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) = AVREFM = 0 V) Parameter Resolution Symbol Conditions RES Overall error Note 1 AINL MIN. TYP. 8 1.2 10-bit resolution AVREFP = VDD Note 3 Conversion time tCONV 1.2 Zero-scale error EZS Full-scale error EFS DLE error Note 1 VAIN LSB ±8.5 Note 4 LSB µs 3.1875 39 µs 17 39 µs 57 95 µs ±0.35 %FSR 10-bit resolution ±0.60 ±0.60 10-bit resolution 10-bit resolution ANI16 to ANI22 Note 4 ±0.35 10-bit resolution AVREFP = VDD Note 3 Analog input voltage ±5.0 Target ANI pin: ANI16 to ANI22 2.7 V ≤ VDD ≤ 5.5 V AVREFP = VDD Note 3 Differential linearity bit 39 AVREFP = VDD Note 3 Integral linearity error Note 1 ILE 10 2.125 AVREFP = VDD Note 3 Notes 1, 2 Unit 3.6 V ≤ VDD ≤ 5.5 V 10-bit resolution 1.8 V ≤ VDD ≤ 5.5 V Notes 1, 2 MAX. %FSR %FSR ±3.5 LSB ±6.0 Note 4 LSB ±2.0 LSB ±2.5 0 Note 4 %FSR Note 4 AVREFP LSB V and VDD Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. When AVREFP ≤ VDD, the MAX. values are as follows. Overall error: Add ±4.0 LSB to the MAX. value when AVREFP = VDD. Zero-scale error/Full-scale error: Add ±0.20%FSR to the MAX. value when AVREFP = VDD. Integral linearity error/ Differential linearity error: Add ±2.0 LSB to the MAX. value when AVREFP = VDD. 4. When the conversion time is set to 57 µs (min.) and 95 µs (max.). R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 54 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (3) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (–) = VSS (ADREFM = 0), target pin: ANI0 to ANI3, ANI16 to ANI22, internal reference voltage, and temperature sensor output voltage (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (–) = VSS) Parameter Symbol Resolution Conditions RES Note 1 Overall error AINL MIN. TYP. 8 10-bit resolution 1.2 1.2 Conversion time tCONV tCONV Unit 10 bit ±7.0 LSB ±10.5 Note 3 LSB 10-bit resolution 3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs Target pin: ANI0 to ANI3, 2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs 1.8 V ≤ VDD ≤ 5.5 V 17 39 µs 57 95 µs 3.6 V ≤ VDD ≤ 5.5 V 2.375 39 µs Target pin: internal reference 2.7 V ≤ VDD ≤ 5.5 V voltage, and temperature 2.4 V ≤ VDD ≤ 5.5 V sensor output voltage (HS 3.5625 39 µs 17 39 µs ±0.60 %FSR ±0.85 %FSR ANI16 to ANI22 Conversion time MAX. 10-bit resolution (high-speed main) mode) Zero-scale errorNotes 1, 2 EZS 10-bit resolution Note 3 Full-scale errorNotes 1, 2 EFS 10-bit resolution ±0.60 %FSR ±0.85 %FSR Note 3 Integral linearity errorNote 1 ILE 10-bit resolution ±4.0 ±6.5 Differential linearity error Note 1 DLE 10-bit resolution ±2.0 ±2.5 Analog input voltage VAIN ANI0 to ANI3, ANI16 to ANI22 Note 3 0 Internal reference voltage Note 3 VDD VBGR Note 4 LSB LSB LSB LSB V V (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) Temperature sensor output voltage VTMPS25 Note 4 V (2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode) Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. When the conversion time is set to 57 µs (min.) and 95 µs (max.). 4. Refer to 2.6.2 Temperature sensor/internal reference voltage characteristics. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 55 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) (4) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (–) = AVREFM (ADREFM = 1), target pin: ANI0, ANI2, ANI3, and ANI16 to ANI22 (TA = –40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VBGR Note 3, Reference voltage (–) = AVREFM Note 4= 0 V, HS (high-speed main) mode) Parameter Resolution Symbol Conditions MIN. RES Conversion time 8-bit resolution Zero-scale error EZS Integral linearity errorNote 1 ILE Differential linearity error Note 1 DLE Analog input voltage MAX. 8 tCONV Notes 1, 2 TYP. Unit bit 39 µs 8-bit resolution ±0.60 %FSR 8-bit resolution ±2.0 LSB 8-bit resolution ±1.0 LSB VAIN 17 0 VBGR Note 3 V Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. Refer to 2.6.2 Temperature sensor/internal reference voltage characteristics. 4. When reference voltage (–) = VSS, the MAX. values are as follows. Zero-scale error: Add ±0.35%FSR to the MAX. value when reference voltage (–) = AVREFM. Integral linearity error: Add ±0.5 LSB to the MAX. value when reference voltage (–) = AVREFM. Differential linearity error: Add ±0.2 LSB to the MAX. value when reference voltage (–) = AVREFM. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 56 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.6.2 Temperature sensor/internal reference voltage characteristics (TA = –40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, HS (high-speed main) mode Parameter Symbol Temperature sensor output voltage VTMPS25 Conditions MIN. TYP. MAX. 1.05 Setting ADS register = 80H, Unit V TA = +25°C Internal reference voltage VBGR Setting ADS register = 81H Temperature coefficient FVTMPS Temperature sensor output 1.38 1.45 1.50 V –3.6 mV/°C voltage that depends on the temperature Operation stabilization wait time tAMP 5 µs 2.6.3 POR circuit characteristics (TA = –40 to +85°C, VSS = 0 V) Parameter Symbol Detection voltage VPOR Conditions The power supply voltage is MIN. TYP. MAX. Unit 1.47 1.51 1.55 V 1.46 1.50 1.54 V rising. VPDR The power supply voltage is falling. Minimum pulse width Note Note TPW 300 µs Minimum time required for a POR reset when VDD exceeds below VPDR. This is also the minimum time required for a POR reset from when VDD exceeds below 0.7 V to when VDD exceeds VPOR while STOP mode is entered or the main system clock is stopped through setting bit 0 (HIOSTOP) and bit 7 (MSTOP) in the clock operation status control register (CSC). TPW Supply voltage (VDD) VPOR VPDR or 0.7 V R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 57 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.6.4 LVD circuit characteristics LVD Detection Voltage of Reset Mode and Interrupt Mode (TA = –40 to +85°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Detection supply voltage Symbol VLVD0 VLVD1 VLVD2 VLVD3 VLVD4 VLVD5 VLVD6 VLVD7 VLVD8 VLVD9 VLVD10 VLVD11 Minimum pulse width Detection delay time R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 tLW Conditions MIN. TYP. MAX. Unit The power supply voltage is rising. 3.98 4.06 4.14 V The power supply voltage is falling. 3.90 3.98 4.06 V The power supply voltage is rising. 3.68 3.75 3.82 V The power supply voltage is falling. 3.60 3.67 3.74 V The power supply voltage is rising. 3.07 3.13 3.19 V The power supply voltage is falling. 3.00 3.06 3.12 V The power supply voltage is rising. 2.96 3.02 3.08 V The power supply voltage is falling. 2.90 2.96 3.02 V The power supply voltage is rising. 2.86 2.92 2.97 V The power supply voltage is falling. 2.80 2.86 2.91 V The power supply voltage is rising. 2.76 2.81 2.87 V The power supply voltage is falling. 2.70 2.75 2.81 V The power supply voltage is rising. 2.66 2.71 2.76 V The power supply voltage is falling. 2.60 2.65 2.70 V The power supply voltage is rising. 2.56 2.61 2.66 V The power supply voltage is falling. 2.50 2.55 2.60 V The power supply voltage is rising. 2.45 2.50 2.55 V The power supply voltage is falling. 2.40 2.45 2.50 V The power supply voltage is rising. 2.05 2.09 2.13 V The power supply voltage is falling. 2.00 2.04 2.08 V The power supply voltage is rising. 1.94 1.98 2.02 V The power supply voltage is falling. 1.90 1.94 1.98 V The power supply voltage is rising. 1.84 1.88 1.91 V The power supply voltage is falling. 1.80 1.84 1.87 V 300 µs 300 µs Page 58 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) LVD detection voltage of interrupt & reset mode (TA = –40 to +85°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Interrupt and reset VLVDB0 mode VLVDB1 Conditions MIN. TYP. MAX. Unit 1.80 1.84 1.87 V Rising reset release voltage 1.94 1.98 2.02 V Falling interrupt voltage 1.90 1.94 1.98 V 2.05 2.09 2.13 V VPOC2, VPOC1, VPOC0 = 0, 0, 1, falling reset voltage LVIS1, LVIS0 = 1, 0 VLVDB2 LVIS1, LVIS0 = 0, 1 Rising reset release voltage Falling interrupt voltage 2.00 2.04 2.08 V VLVDB3 LVIS1, LVIS0 = 0, 0 Rising reset release voltage 3.07 3.13 3.19 V Falling interrupt voltage 3.00 3.06 3.12 V 2.40 2.45 2.50 V Rising reset release voltage 2.56 2.61 2.66 V Falling interrupt voltage 2.50 2.55 2.60 V Rising reset release voltage 2.66 2.71 2.76 V Falling interrupt voltage 2.60 2.65 2.70 V Rising reset release voltage 3.68 3.75 3.82 V Falling interrupt voltage 3.60 3.67 3.74 V 2.70 2.75 2.81 V Rising reset release voltage 2.86 2.92 2.97 V Falling interrupt voltage 2.80 2.86 2.91 V Rising reset release voltage 2.96 3.02 3.08 V Falling interrupt voltage 2.90 2.96 3.02 V Rising reset release voltage 3.98 4.06 4.14 V Falling interrupt voltage 3.90 3.98 4.06 V VLVDC0 VPOC2, VPOC1, VPOC0 = 0, 1, 0, falling reset voltage LVIS1, LVIS0 = 1, 0 VLVDC1 LVIS1, LVIS0 = 0, 1 VLVDC2 LVIS1, LVIS0 = 0, 0 VLVDC3 VLVDD0 VPOC2, VPOC1, VPOC1 = 0, 1, 1, falling reset voltage VLVDD1 VLVDD2 VLVDD3 LVIS1, LVIS0 = 1, 0 LVIS1, LVIS0 = 0, 1 LVIS1, LVIS0 = 0, 0 2.6.5 Power supply voltage rising slope characteristics (TA = –40 to +85°C, VSS = 0 V) Parameter Power supply voltage rising slope Caution Symbol Conditions SVDD MIN. TYP. MAX. Unit 54 V/ms Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the operating voltage range shown in 2.4 AC Characteristics. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 59 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.7 RAM Data Retention Characteristics (TA = –40 to +85°C, VSS = 0 V) Parameter Data retention supply voltage Symbol Conditions VDDDR MIN. 1.46 TYP. Note MAX. Unit 5.5 V Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated. Operation mode STOP mode RAM data retention VDD VDDDR STOP instruction execution Standby release signal (interrupt request) 2.8 Flash Memory Programming Characteristics (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol System clock frequency fCLK Code flash memory rewritable times Cerwr Notes 1, 2, 3 Conditions MIN. TYP. 1 Retained for 20 years 1,000 MAX. Unit 24 MHz Times TA = 85°C Data flash memory rewritable times Notes 1, 2, 3 1,000,000 Retained for 1 year TA = 25°C Retained for 5 years 100,000 TA = 85°C Retained for 20 years 10,000 TA = 85°C Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. 2. When using flash memory programmer and Renesas Electronics self programming library 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 60 of 108 RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) 2.9 Dedicated Flash Memory Programmer Communication (UART) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Transfer rate Conditions MIN. During serial programming TYP. 115,200 MAX. Unit 1,000,000 bps 2.10 Timing of Entry to Flash Memory Programming Modes (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Time to complete the communication for the initial Conditions MIN. TYP. POR and LVD reset are tSUINIT MAX. Unit 100 ms released before external setting after the external reset is released reset release Time to release the external reset after the TOOL0 tSU POR and LVD reset are pin is set to the low level released before external 10 µs 1 ms reset release Time to hold the TOOL0 pin at the low level after POR and LVD reset are tHD the external reset is released released before external (excluding the processing time of the firmware to reset release control the flash memory) RESET tHD + software processing time 1-byte data for setting mode TOOL0 tSU tSUINIT The low level is input to the TOOL0 pin. The external reset is released (POR and LVD reset must be released before the external reset is released.). The TOOL0 pin is set to the high level. Setting of the flash memory programming mode by UART reception and complete the baud rate setting. Remark tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released during this period. tSU: Time to release the external reset after the TOOL0 pin is set to the low level tHD: Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing time of the firmware to control the flash memory) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 61 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) This chapter describes the following electrical specifications. Target products G: Industrial applications TA = -40 to +105°C R5F102xxGxx Cautions 1. The RL78 microcontrollers have an on-chip debug function, which is provided for development and evaluation. Do not use the on-chip debug function in products designated for mass production, because the guaranteed number of rewritable times of the flash memory may be exceeded when this function is used, and product reliability therefore cannot be guaranteed. Renesas Electronics is not liable for problems occurring when the on-chip debug function is used. 2. The pins mounted depend on the product. Refer to 2.1 Port Functions to 2.2.1 Functions for each product in the RL78/G12 User’s Manual. 3. Please contact Renesas Electronics sales office for derating of operation under TA = +85°C to +105°C. Derating is the systematic reduction of load for the sake of improved reliability. Remark When the RL78 microcontroller is used in the range of TA = -40 to +85°C, see 2. ELECTRICAL SPECIFICATIONS (TA = -40 to +85°C). There are following differences between the products “G: Industrial applications (TA = -40 to +105°C)” and the products “A: Consumer applications, and D: Industrial applications”. Parameter Application A: Consumer applications, G: Industrial applications D: Industrial applications Operating ambient temperature TA = -40 to +85°C TA = -40 to +105°C Operating mode HS (high-speed main) mode: HS (high-speed main) mode only: Operating voltage range 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz 2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz 2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz 2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz LS (low-speed main) mode: 1.8 V ≤ VDD ≤ 5.5 V@1 MHz to 8 MHz High-speed on-chip oscillator R5F102 products, 1.8 V ≤ VDD ≤ 5.5 V: R5F102 products, 2.4 V ≤ VDD ≤ 5.5 V: clock accuracy ±1.0%@ TA = -20 to +85°C ±2.0%@ TA = +85 to +105°C ±1.5%@ TA = -40 to -20°C ±1.0%@ TA = -20 to +85°C R5F103 products, 1.8 V ≤ VDD ≤ 5.5 V: ±1.5%@ TA = -40 to -20°C ±5.0%@ TA = -40 to +85°C Serial array unit UART UART CSI: fCLK/2 (supporting 12 Mbps), fCLK/4 2 Voltage detector CSI: fCLK/4 Simplified I C communication Simplified I2C communication Rise detection voltage: 1.88 V to 4.06 V (12 levels) Rise detection voltage: 2.61 V to 4.06 V Fall detection voltage: 1.84 V to 3.98 V (12 levels) (8 levels) Fall detection voltage: 2.55 V to 3.98 V (8 levels) Remark The electrical characteristics of the products G: Industrial applications (TA = -40 to +105°C) are different from those of the products “A: Consumer applications, and D: Industrial applications”. For details, refer to 3.1 to 3.10. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 62 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.1 Absolute Maximum Ratings Absolute Maximum Ratings (TA = 25°C) Parameter Symbols Supply Voltage VDD REGC terminal input voltageNote1 VIREGC Conditions REGC Ratings Unit –0.5 to + 6.5 V –0.3 to +2.8 V and –0.3 to VDD + 0.3 Note 2 Input Voltage VI1 Other than P60, P61 VI2 P60, P61 (N-ch open drain) Output Voltage VO Analog input voltage VAI 20, 24-pin products: ANI0 to ANI3, ANI16 to ANI22 30-pin products: ANI0 to ANI3, ANI16 to ANI19 Output current, high IOH1 –0.3 to VDD + 0.3Note 3 V –0.3 to 6.5 V –0.3 to VDD + 0.3Note 3 V –0.3 to VDD + 0.3 V and –0.3 to AVREF(+)+0.3 Notes 3, 4 Per pin Other than P20 to P23 –40 mA Total of all pins All the terminals other than P20 to P23 –170 mA 20-, 24-pin products: P40 to P42 –70 mA 20-, 24-pin products: P00 to P03Note 5, P10 to P14 30-pin products: P10 to P17, P30, P31, P50, P51, P147 –100 mA P20 to P23 –0.5 mA –2 mA mA 30-pin products: P00, P01, P40, P120 IOH2 Per pin Total of all pins Output current, low IOL1 IOL2 Per pin Other than P20 to P23 40 Total of all pins All the terminals other than P20 to P23 170 mA 20-, 24-pin products: P40 to P42 30-pin products: P00, P01, P40, P120 70 mA 20-, 24-pin products: P00 to P03 Note 5, P10 to P14, P60, P61 30-pin products: P10 to P17, P30, P31, P50, P51, P60, P61, P147 100 mA 1 mA 5 mA Per pin Total of all pins P20 to P23 Operating ambient temperature TA –40 to +105 °C Storage temperature Tstg –65 to +150 °C Notes 1. 2. 3. 4. 5. 30-pin product only. Connect the REGC pin to VSS via a capacitor (0.47 to 1 µF). This value determines the absolute maximum rating of the REGC pin. Do not use it with voltage applied. Must be 6.5 V or lower. Do not exceed AVREF (+) + 0.3 V in case of A/D conversion target pin. 24-pin products only. Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Remarks 1. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. 2. AVREF(+) : + side reference voltage of the A/D converter. 3. VSS : Reference voltage R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 63 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.2 Oscillator Characteristics 3.2.1 X1 oscillator characteristics (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Resonator Conditions MIN. TYP. MAX. X1 clock oscillation Ceramic resonator / 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 frequency (fX)Note crystal oscillator 2.4 V ≤ VDD < 2.7 V 1.0 8.0 Unit MHz Note Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution time. Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the oscillator characteristics. Caution Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the X1 clock oscillation stabilization time using the oscillation stabilization time counter status register (OSTC) by the user. Determine the oscillation stabilization time of the OSTC register and the oscillation stabilization time select register (OSTS) after sufficiently evaluating the oscillation stabilization time with the resonator to be used. Remark When using the X1 oscillator, refer to 5.4 System Clock Oscillator in the RL78/G12 User’s Manual. 3.2.2 On-chip oscillator characteristics (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Oscillators High-speed on-chip oscillator Parameters Conditions MAX. Unit 1 24 MHz TA = –20 to +85°C -1.0 +1.0 % TA = –40 to –20°C -1.5 +1.5 % TA = +85 to +105°C -2.0 +2.0 % fIH MIN. TYP. clock frequency Notes 1, 2 High-speed on-chip oscillator R5F102 products clock frequency accuracy Low-speed on-chip oscillator fIL 15 kHz clock frequency Low-speed on-chip oscillator -15 +15 % clock frequency accuracy Notes 1. High-speed on-chip oscillator frequency is selected by bits 0 to 3 of option byte (000C2H) and bits 0 to 2 of HOCODIV register. 2. This only indicates the oscillator characteristics. Refer to AC Characteristics for instruction execution time. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 64 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.3 DC Characteristics 3.3.1 Pin characteristics (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Output current, high Note 1 IOH1 (1/4) Conditions MIN. TYP. MAX. Unit 20-, 24-pin products: –3.0 mA Per pin for P00 to P03Note 4, Note 2 P10 to P14, P40 to P42 30-pin products: Per pin for P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V Total of P40 to P42 30-pin products: –9.0 mA 2.7 V ≤ VDD < 4.0 V –6.0 mA 2.4 V ≤ VDD < 2.7 V –4.5 mA 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V –27.0 mA Total of P00 to P03Note 4, P10 to P14 2.7 V ≤ VDD < 4.0 V –18.0 mA 30-pin products: 2.4 V ≤ VDD < 2.7 V –10.0 mA Total of all pins (When duty ≤ 70%Note 3) –36.0 mA Per pin for P20 to P23 –0.1 mA Total of all pins –0.4 mA Total of P00, P01, P40, P120 (When duty ≤ 70% Note 3) Total of P10 to P17, P30, P31, P50, P51, P147 (When duty ≤ 70% Note 3) IOH2 Notes 1. value of current at which the device operation is guaranteed even if the current flows from the VDD pin to an output pin. 2. 3. However, do not exceed the total current value. The output current value under conditions where the duty factor ≤ 70%. If duty factor > 70%: The output current value can be calculated with the following expression (where n represents the duty factor as a percentage). ● Total output current of pins = (IOH × 0.7)/(n × 0.01) Where n = 80% and IOH = –10.0 mA Total output current of pins = (–10.0 × 0.7)/(80 × 0.01)  –8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. 4. 24-pin products only. Caution P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41 for 24-pin products, and P00, P10 to P15, P17, and P50 for 30-pin products do not output high level in N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 65 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Note 1 Output current, low IOL1 (2/4) Conditions MIN. 20-, 24-pin products: Per pin for P00 to P03Note 4, TYP. MAX. Unit 8.5 mA Note 2 P10 to P14, P40 to P42 30-pin products: Per pin for P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 Per pin for P60, P61 15.0 mA Note 2 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V 25.5 mA Total of P40 to P42 2.7 V ≤ VDD < 4.0 V 9.0 mA 30-pin products: 2.4 V ≤ VDD < 2.7 V 1.8 mA 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V 40.0 mA Total of P00 to P03Note 4, 2.7 V ≤ VDD < 4.0 V 27.0 mA 2.4 V ≤ VDD < 2.7 V 5.4 mA Total of all pins (When duty ≤ 70%Note 3) 65.5 mA Per pin for P20 to P23 0.4 mA Total of all pins 1.6 mA Total of P00, P01, P40, P120 (When duty ≤ 70% Note 3) P10 to P14, P60, P61 30-pin products: Total of P10 to P17, P30, P31, P50, P51, P60, P61, P147 (When duty ≤ 70% Note 3) IOL2 Notes 1. Value of current at which the device operation is guaranteed even if the current flows from an output pin to the VSS pin. 2. However, do not exceed the total current value. 3. The output current value under conditions where the duty factor ≤ 70%. If duty factor > 70%: The output current value can be calculated with the following expression (where n represents the duty factor as a percentage). ● Total output current of pins = (IOL × 0.7)/(n × 0.01) Where n = 80% and IOL = 10.0 mA Total output current of pins = (10.0 × 0.7)/(80 × 0.01)  8.7 mA However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A current higher than the absolute maximum rating must not flow into one pin. 4. Remark 24-pin products only. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 66 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Input voltage, high Symbol VIH1 (3/4) Conditions MIN. MAX. Unit 0.8VDD VDD V 4.0 V ≤ VDD ≤ 5.5 V 2.2 VDD V 20-, 24-pin products: P10, P11 3.3 V ≤ VDD < 4.0 V 2.0 VDD V 2.4 V ≤ VDD < 3.3 V 1.5 VDD V 0.7VDD VDD V 0.7VDD 6.0 V 0.8VDD VDD V 0 0.2VDD V 4.0 V ≤ VDD ≤ 5.5 V 0 0.8 V 20-, 24-pin products: P10, P11 3.3 V ≤ VDD < 4.0 V 0 0.5 V 2.4 V ≤ VDD < 3.3 V 0 0.32 V 0 0.3VDD V 0 0.3VDD V 0 0.2VDD V Normal input buffer 20-, 24-pin products: P00 to P03 TYP. Note 2 , P10 to P14, P40 to P42 30-pin products: P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 VIH2 TTL input buffer 30-pin products: P01, P10, P11, P13 to P17 VIH3 Normal input buffer P20 to P23 VIH4 Input voltage, low P60, P61 Note 1 VIH5 P121, P122, P125 VIL1 Normal input buffer , P137, EXCLK, RESET 20-, 24-pin products: P00 to P03 Note 2 , P10 to P14, P40 to P42 30-pin products: P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 VIL2 TTL input buffer 30-pin products: P01, P10, P11, P13 to P17 Output voltage, high VIL3 P20 to P23 VIL4 P60, P61 Note 1 VIL5 P121, P122, P125 VOH1 20-, 24-pin products: , P137, EXCLK, RESET 4.0 V ≤ VDD ≤ 5.5 V, P00 to P03Note 2, P10 to P14, IOH1 = –3.0 mA P40 to P42 2.7 V ≤ VDD ≤ 5.5 V, 30-pin products: IOH1 = –2.0 mA P00, P01, P10 to P17, P30, 2.4 V ≤ VDD ≤ 5.5 V, P31, P40, P50, P51, P120, VDD–0.7 V VDD–0.6 V VDD–0.5 V VDD–0.5 V IOH1 = –1.5 mA P147 VOH2 Notes 1. 2. P20 to P23 IOH2 = –100 µA 20, 24-pin products only. 24-pin products only. Caution The maximum value of VIH of pins P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41 for 24-pin products, and P00, P10 to P15, P17, and P50 for 30-pin products is VDD even in N-ch opendrain mode. High level is not output in the N-ch open-drain mode. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 67 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Output voltage, low Symbol VOL1 (4/4) Conditions 20-, 24-pin products: 4.0 V ≤ VDD ≤ 5.5 V, P00 to P03Note, P10 to P14, IOL1 = 8.5 mA P40 to P42 2.7 V ≤ VDD ≤ 5.5 V, 30-pin products: P00, P01, IOL1 = 3.0 mA P10 to P17, P30, P31, P40, 2.7 V ≤ VDD ≤ 5.5 V, P50, P51, P120, P147 MIN. TYP. MAX. Unit 0.7 V 0.6 V 0.4 V 0.4 V IOL1 = 1.5 mA 2.4 V ≤ VDD ≤ 5.5 V, IOL1 = 0.6 mA VOL2 P20 to P23 IOL2 = 400 µA 0.4 V VOL3 P60, P61 4.0 V ≤ VDD ≤ 5.5 V, 2.0 V 0.4 V 0.4 V 0.4 V 1 µA 1 µA 10 µA –1 µA –1 µA –10 µA 100 kΩ IOL1 = 15.0 mA 4.0 V ≤ VDD ≤ 5.5 V, IOL1 = 5.0 mA 2.7 V ≤ VDD ≤ 5.5 V, IOL1 = 3.0 mA 2.4 V ≤ VDD ≤ 5.5 V, IOL1 = 2.0 mA Input leakage current, ILIH1 Other than P121, VI = VDD P122 high ILIH2 P121, P122 VI = VDD Input port or external (X1, X2/EXCLK) clock input When resonator connected Input leakage current, ILIL1 Other than P121, VI = VSS P122 low ILIL2 P121, P122 VI = VSS Input port or external (X1, X2/EXCLK) clock input When resonator connected On-chip pull-up RU 20-, 24-pin products: VI = VSS, input port 10 20 P00 to P03Note, P10 to P14, resistance P40 to P42, P125, RESET 30-pin products: P00, P01, P10 to P17, P30, P31, P40, P50, P51, P120, P147 Note 24-pin products only. Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port pins. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 68 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.3.2 Supply current characteristics (1) 20-, 24-pin products (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol IDD1 Supply currentNote 1 (1/2) Conditions Operating HS (High-speed mode MIN. fIH = 24 MHzNote 3 main) mode Note 4 Basic VDD = 5.0 V 1.5 VDD = 3.0 V 1.5 Normal VDD = 5.0 V 3.3 5.3 operation VDD = 3.0 V 3.3 5.3 VDD = 5.0 V 2.5 3.9 VDD = 3.0 V 2.5 3.9 Square wave input 2.8 4.7 Resonator connection 3.0 4.8 Square wave input 2.8 4.7 Resonator connection 3.0 4.8 Square wave input 1.8 2.8 Resonator connection 1.8 2.8 Square wave input 1.8 2.8 Resonator connection 1.8 2.8 fIH = 16 MHz Note 2 , VDD = 5.0 V Note 2 fMX = 20 MHz , VDD = 3.0 V Note 2 fMX = 10 MHz , VDD = 5.0 V Note 2 fMX = 10 MHz , VDD = 3.0 V Notes 1. MAX. operation Note 3 fMX = 20 MHz TYP. Unit mA mA mA mA mA mA mA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. When high-speed on-chip oscillator clock is stopped. 3. When high-speed system clock is stopped 4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Temperature condition of the TYP. value is TA = 25°C. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 69 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (1) 20-, 24-pin products (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol IDD2 Note 2 HALT Supply currentNote 1 (2/2) Conditions mode HS (High-speed MIN. fIH = 24 MHzNote 4 main) mode Note 6 fIH = 16 MHz Note 4 fMX = 20 MHz Note 3 , VDD = 5.0 V Note 3 VDD = 5.0 V 440 2230 µA VDD = 3.0 V 440 2230 VDD = 5.0 V 400 1650 VDD = 3.0 V 400 1650 Square wave input 280 1900 Resonator connection 450 2000 280 1900 Square wave input Resonator connection 450 2000 fMX = 10 MHzNote 3, Square wave input 190 1010 VDD = 5.0 V Resonator connection 260 1090 Square wave input 190 1010 Resonator connection 260 1090 Note 3 , VDD = 3.0 V Notes 1. Unit , fMX = 10 MHz IDD3 MAX. VDD = 3.0 V fMX = 20 MHz Note 5 TYP. STOP TA = –40°C 0.19 0.50 mode TA = +25°C 0.24 0.50 TA = +50°C 0.32 0.80 TA = +70°C 0.48 1.20 TA = +85°C 0.74 2.20 TA = +105°C 1.50 10.20 µA µA µA µA µA µA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. During HALT instruction execution by flash memory. 3. When high-speed on-chip oscillator clock is stopped. 4. When high-speed system clock is stopped. 5. Not including the current flowing into the 12-bit interval timer and watchdog timer. 6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Except temperature condition of the TYP. value is TA = 25°C, other than STOP mode R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 70 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (2) 30-pin products (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol IDD1 Supply currentNote 1 (1/2) Conditions MIN. Operating HS (High-speed fIH = 24 MHzNote 3 Basic VDD = 5.0 V 1.5 mode main) mode Note 4 operation VDD = 3.0 V 1.5 Normal 3.7 5.8 3.7 5.8 VDD = 5.0 V 2.7 4.2 VDD = 3.0 V 2.7 4.2 Note 2 , Square wave input 3.0 4.9 VDD = 5.0 V Resonator connection 3.2 5.0 fMX = 20 MHzNote 2, Square wave input 3.0 4.9 VDD = 3.0 V Resonator connection 3.2 5.0 Square wave input 1.9 2.9 Resonator connection 1.9 2.9 Square wave input 1.9 2.9 Resonator connection 1.9 2.9 Note 2 fMX = 10 MHz , VDD = 5.0 V Note 2 fMX = 10 MHz , VDD = 3.0 V Unit mA VDD = 5.0 V fIH = 16 MHz fMX = 20 MHz MAX. operation VDD = 3.0 V Note 3 Notes 1. TYP. mA mA mA mA mA mA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. When high-speed on-chip oscillator clock is stopped. 3. When high-speed system clock is stopped 4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Temperature condition of the TYP. value is TA = 25°C. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 71 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (2) 30-pin products (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Supply Symbol (2/2) Conditions IDD2 Note 2 HALT HS (High-speed mode main) mode Note 6 current Note 1 MIN. fIH = 24 MHzNote 4 fIH = 16 MHz Note 4 fMX = 20 MHz Note 3 , VDD = 5.0 V Note 3 VDD = 5.0 V 440 2300 µA VDD = 3.0 V 440 2300 VDD = 5.0 V 400 1700 VDD = 3.0 V 400 1700 Square wave input 280 1900 Resonator connection 450 2000 280 1900 Square wave input Resonator connection 450 2000 fMX = 10 MHzNote 3, Square wave input 190 1020 VDD = 5.0 V Resonator connection 260 1100 Square wave input 190 1020 Resonator connection 260 1100 Note 3 , VDD = 3.0 V Notes 1. Unit , fMX = 10 MHz IDD3 MAX. VDD = 3.0 V fMX = 20 MHz Note 5 TYP. STOP TA = –40°C 0.18 0.50 mode TA = +25°C 0.23 0.50 TA = +50°C 0.30 1.10 TA = +70°C 0.46 1.90 TA = +85°C 0.75 3.30 TA = +105°C 2.94 15.30 µA µA µA µA µA µA Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However, not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down resistors and the current flowing during data flash rewrite. 2. During HALT instruction execution by flash memory. 3. When high-speed on-chip oscillator clock is stopped. 4. When high-speed system clock is stopped. 5. Not including the current flowing into the 12-bit interval timer and watchdog timer. 6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as follows. HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz Remarks 1. fMX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock frequency) 2. fIH: high-speed on-chip oscillator clock frequency 3. Except STOP mode, temperature condition of the TYP. value is TA = 25°C. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 72 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (3) Peripheral functions (Common to all products) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Low-speed onchip Symbol IFIL Conditions MIN. Note 1 TYP. MAX. Unit 0.20 µA 0.02 µA 0.22 µA oscillator operating current 12-bit interval timer ITMKA operating current Notes 1, 2, 3 Watchdog timer IWDT operating current Notes 1, 2, 4 A/D converter operating current A/D converter reference voltage operating current Temperature sensor operating current LVD operating current IADC Notes 1, 5 fIL = 15 kHz When conversion at maximum speed Normal mode, AVREFP = VDD = 5.0 V 1.30 1.70 mA Low voltage mode, AVREFP = VDD = 3.0 V 0.50 0.70 mA IADREF 75.0 µA 75.0 µA 0.08 µA Note 1 ITMPS Note 1 ILVD Notes 1, 6 Self-programming IFSP operating current Notes 1, 8 BGO operating IBGO current Notes 1, 7 SNOOZE operating ISNOZ current Note 1 ADC operation 2.00 12.20 mA 2.00 12.20 mA The mode is performed Note 9 0.50 1.10 mA The A/D conversion operations are 1.20 2.04 mA 0.70 1.54 mA performed, Low voltage mode, AVREFP = VDD = 3.0 V CSI/UART operation Notes 1. Current flowing to the VDD. 2. When high speed on-chip oscillator and high-speed system clock are stopped. 3. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3, and IFIL and ITMKA when the 12-bit interval timer operates. 4. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer operates. 5. Current flowing only to the A/D converter. The current value of the RL78 microcontrollers is the sum of IDD1 or IDD2 and IADC when the A/D converter operates in an operation mode or the HALT mode. 6. Current flowing only to the LVD circuit. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and ILVD when the LVD circuit operates. 7. Current flowing only during data flash rewrite. 8. Current flowing only during self programming. 9. For shift time to the SNOOZE mode, see 17.3.3 SNOOZE mode in the RL78/G12 User’s Manual. Remarks 1. fIL: Low-speed on-chip oscillator clock frequency 2. Temperature condition of the TYP. value is TA = 25°C R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 73 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.4 AC Characteristics (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Items Instruction cycle (minimum Symbol TCY instruction execution time) Conditions MIN. TYP. MAX. Unit Main system HS (High- 2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs clock (fMAIN) speed main) 2.4 V ≤ VDD < 2.7 V 0.0625 1 µs operation mode During self HS (High- 2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs programming speed main) 2.4 V ≤ VDD < 2.7 V 0.0625 1 µs 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz 2.4 V ≤ VDD < 2.7 V 1.0 16.0 MHz 2.7 V ≤ VDD ≤ 5.5 V 24 ns 2.4 V ≤ VDD < 2.7 V 30 ns 1/fMCK + ns mode External main system clock fEX frequency External main system clock tEXH, tEXL input high-level width, lowlevel width TI00 to TI07 input high-level tTIH, tTIL width, low-level width TO00 to TO07 output 10 fTO frequency PCLBUZ0, or PCLBUZ1 fPCL output frequency INTP0 to INTP5 input high- 4.0 V ≤ VDD ≤ 5.5 V 12 MHz 2.7 V ≤ VDD < 4.0 V 8 MHz 2.4 V ≤ VDD < 2.7 V 4 MHz 4.0 V ≤ VDD ≤ 5.5 V 16 MHz 2.7 V ≤ VDD < 4.0 V 8 MHz 2.4 V ≤ VDD < 2.7 V 4 MHz tINTH, tINTL 1 µs tKR 250 ns tRSL 10 µs level width, low-level width KR0 to KR9 input available width RESET low-level width Remark fMCK: Timer array unit operation clock frequency (Operation clock to be set by the timer clock select register 0 (TPS0) and the CKS0n bit of timer mode register 0n (TMR0n). n: Channel number (n = 0 to 7)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 74 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) Minimum Instruction Execution Time during Main System Clock Operation TCY vs VDD (HS (high-speed main) mode) Cycle time TCY [µs] 10 1.0 When the high-speed on-chip oscillator clock is selected During self programming When high-speed system clock is selected 0.1 0.0625 0.04167 0.01 0 1.0 2.0 3.0 2.4 2.7 4.0 5.0 6.0 5.5 Supply voltage VDD [V] AC Timing Test Point VIH/VOH VIL/VOL Test points VIH/VOH VIL/VOL External Main System Clock Timing 1/fEX tEXL tEXH EXCLK R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 75 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) TI/TO Timing tTIH tTIL TI00 to TI07 1/fTO TO00 to TO07 Interrupt Request Input Timing tINTH tINTL INTP0 to INTP5 Key Interrupt Input Timing tKR KR0 to KR9 RESET Input Timing tRSL RESET R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 76 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.5 Peripheral Functions Characteristics AC Timing Test Point VIH/VOH VIH/VOH Test points VIL/VOL VIL/VOL 3.5.1 Serial array unit (1) During communication at same potential (UART mode) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. Transfer rate Note 1 Unit MAX. fMCK/12 bps 2.0 Mbps Theoretical value of the maximum transfer rate fCLK = fMCKNote 2 Notes 1. 2. Transfer rate in the SNOOZE mode is 4800 bps only. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) Caution Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). UART mode connection diagram (during communication at same potential) TxDq Rx RL78 microcontroller User's device RxDq Tx UART mode bit width (during communication at same potential) (reference) 1/Transfer rate High-/Low-bit width Baud rate error tolerance TxDq RxDq Remarks 1. 2. q: UART number (q = 0 to 2), g: PIM, POM number (g = 0, 1) fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 77 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (2) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SCKp cycle time tKCY1 SCKp high-/low-level width SIp setup time (to SCKp↑) Note 1 SIp hold time (from SCKp↑) Note 2 Delay time from SCKp↓ to tKCY1 ≥ 4/fCLK Unit MAX. 2.7 V ≤ VDD ≤ 5.5 V 334 ns 2.4 V ≤ VDD ≤ 5.5 V 500 ns tKH1, 4.0 V ≤ VDD ≤ 5.5 V tKCY1/2–24 ns tKL1 2.7 V ≤ VDD ≤ 5.5 V tKCY1/2–36 ns 2.4 V ≤ VDD ≤ 5.5 V tKCY1/2–76 ns 4.0 V ≤ VDD ≤ 5.5 V 66 ns 2.7 V ≤ VDD ≤ 5.5 V 66 ns 2.4 V ≤ VDD ≤ 5.5 V 113 ns 38 ns tSIK1 tKSI1 tKSO1 C = 30 pF Note 4 50 ns SOp output Note 3 Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 4. C is the load capacitance of the SCKp and SOp output lines. Caution Select the normal input buffer for the SIp pin and the normal output mode for the SOp and SCKp pins by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1, POM4). Remarks 1. p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3) 2. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 78 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SCKp cycle time Note 5 tKCY2 4.0 V ≤ VDD ≤ 5.5 V 2.7 V ≤ VDD ≤ 5.5 V Unit MAX. 20 MHz < fMCK 16/fMCK ns fMCK ≤ 20 MHz 12/fMCK ns 16 MHz < fMCK 16/fMCK ns fMCK ≤ 16 MHz 12/fMCK ns 12/fMCK ns 2.4 V ≤ VDD ≤ 5.5 V and 1000 SCKp high-/low-level width SIp setup time (to SCKp↑) tKH2, 4.0 V ≤ VDD ≤ 5.5 V tKCY2/2–14 ns tKL2 2.7 V ≤ VDD ≤ 5.5 V tKCY2/2–16 ns tSIK2 Note 1 2.4 V ≤ VDD ≤ 5.5 V tKCY2/2–36 ns 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 40 ns 2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 60 ns 1/fMCK + 62 ns tKSI2 SIp hold time (from SCKp↑) Note 2 Delay time from SCKp↓ to SOp output tKSO2 C = 30 pF Note 4 Note 3 Notes 1. 2.7 V ≤ VDD ≤ 5.5 V 2/fMCK + 66 ns 2.4 V ≤ VDD ≤ 5.5 V 2/fMCK + 113 ns When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 4. C is the load capacitance of the SOp output lines. 5. Transfer rate in the SNOOZE mode: MAX. 1 Mbps. Caution Select the normal input buffer for the SIp and SCKp pins and the normal output mode for the SOp pin by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1, POM4). CSI mode connection diagram (during communication at same potential) SCKp RL78 microcontroller SIp SOp R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 SCK SO User's device SI Page 79 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) t KCY1, 2 t KL1, 2 t KH1, 2 SCKp t SIK1, 2 SIp t KSI1, 2 Input data t KSO1, 2 Output data SOp CSI mode serial transfer timing (during communication at same potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) tKCY1, 2 tKH1, 2 tKL 1, 2 SCKp tSIK1, 2 SIp tKSI1, 2 Input data tKSO1, 2 SOp Remarks 1. 2. Output data p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3) fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0,1), n: Channel number (n = 0, 1, 3)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 80 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (4) During communication at same potential (simplified I2C mode) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. fSCL Cb = 100 pF, Rb = 3 kΩ Hold time when SCLr = “L” tLOW Cb = 100 pF, Rb = 3 kΩ 4600 Hold time when SCLr = “H” tHIGH Cb = 100 pF, Rb = 3 kΩ 4600 tSU:DAT Cb = 100 pF, Rb = 3 kΩ Data hold time (transmission) tHD:DAT Cb = 100 pF, Rb = 3 kΩ Notes 1. 2. MAX. 100 Note 1 SCLr clock frequency Data setup time (reception) Unit 1/fMCK + 580 kHz ns ns Note 2 ns 0 1420 ns The value must be equal to or less than fMCK/4. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”. Caution Select the N-ch open drain output (VDD tolerance) mode for SDAr by using port output mode register h (POMh). Simplified I2C mode connection diagram (during communication at same potential) VDD Rb SDAr SDA RL78 microcontroller User's device SCLr SCL Simplified I2C mode serial transfer timing (during communication at same potential) 1/fSCL tLOW tHIGH SCLr SDAr tHD:DAT Remarks 1. tSU:DAT Rb [Ω]:Communication line (SDAr) pull-up resistance Cb [F]: Communication line (SCLr, SDAr) load capacitance 2. 3. r: IIC number (r = 00, 01, 11, 20), h: = POM number (h = 0, 1, 4, 5) fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (0, 1, 3)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 81 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol HS (high-speed main) Conditions Unit Mode MIN. Reception Transfer rate Note4 4.0 V ≤ VDD ≤ 5.5 V, MAX. fMCK/12 bps Note 1 2.7 V ≤ Vb ≤ 4.0 V 2.0 Mbps fMCK/12 bps Theoretical value of the maximum transfer rate fMCK = fCLKNote 2 2.7 V ≤ VDD < 4.0 V, Note 1 2.3 V ≤ Vb ≤ 2.7 V 2.0 Mbps fMCK/12 bps Theoretical value of the maximum transfer rate fMCK = fCLKNote 2 2.4 V ≤ VDD < 3.3 V, Note 1 1.6 V ≤ Vb ≤ 2.0 V 2.0 Mbps Note 3 bps 2.0 Mbps Theoretical value of the maximum transfer rate fMCK = fCLKNote 2 Transmission 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V Theoretical value of the maximum Note 4 transfer rate Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V 2.7 V ≤ VDD < 4.0 V, Note 5 bps 1.2 Mbps 2.3 V ≤ Vb ≤ 2.7 V, Theoretical value of the maximum Note 6 transfer rate Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V Notes 2.4 V ≤ VDD < 3.3 V, bps 2, 7 1.6 V ≤ Vb ≤ 2.0 V Theoretical value of the maximum 0.43 Mbps Note 8 transfer rate Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V Notes 1. 2. Transfer rate in the SNOOZE mode is 4800 bps only. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are: HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V) 16 MHz (2.4 V ≤ VDD ≤ 5.5 V) 3. The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V 1 Maximum transfer rate = R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 2.2 {–Cb × Rb × ln (1 – Vb )} × 3 [bps] Page 82 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 1 2.2 Transfer rate × 2 – {–Cb × Rb × ln (1 – Vb )} Baud rate error (theoretical value) = 1 ( Transfer rate ) × Number of transferred bits × 100 [%] * This value is the theoretical value of the relative difference between the transmission and reception sides. 4. This value as an example is calculated when the conditions described in the “Conditions” column are met. 5. The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid Refer to Note 3 above to calculate the maximum transfer rate under conditions of the customer. maximum transfer rate. Expression for calculating the transfer rate when 2.7 V ≤ VDD < 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V 1 Maximum transfer rate = 2.0 {–Cb × Rb × ln (1 – Vb )} × 3 [bps] 2.0 1 Transfer rate × 2 – {–Cb × Rb × ln (1 – Vb )} Baud rate error (theoretical value) = 1 ( Transfer rate ) × Number of transferred bits × 100 [%] * This value is the theoretical value of the relative difference between the transmission and reception sides. 6. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 5 above to calculate the maximum transfer rate under conditions of the customer. 7. The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid maximum transfer rate. Expression for calculating the transfer rate when 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V 1 Maximum transfer rate = 1.5 {–Cb × Rb × ln (1 – Vb )} × 3 [bps] 1.5 1 Transfer rate × 2 – {–Cb × Rb × ln (1 – Vb )} Baud rate error (theoretical value) = 1 ( Transfer rate ) × Number of transferred bits × 100 [%] * This value is the theoretical value of the relative difference between the transmission and reception sides. 8. This value as an example is calculated when the conditions described in the “Conditions” column are met. Refer to Note 7 above to calculate the maximum transfer rate under conditions of the customer. Caution Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg). For VIH and VIL, see the DC characteristics with TTL input buffer selected. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 83 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) UART mode connection diagram (during communication at different potential) Vb Rb TxDq Rx RL78 microcontroller User's device RxDq Tx UART mode bit width (during communication at different potential) (reference) 1/Transfer rate Low-bit width High-bit width Baud rate error tolerance TxDq 1/Transfer rate High-/Low-bit width Baud rate error tolerance RxDq Remarks 1. Rb[Ω]: Communication line (TxDq) pull-up resistance, Cb[F]: Communication line (TxDq) load capacitance, Vb[V]: Communication line voltage 2. q: UART number (q = 0 to 2), g: PIM and POM number (g = 0, 1) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number, n: Channel number (mn = 00 to 03, 10, 11)) 4. UART0 of the 20- and 24-pin products supports communication at different potential only when the peripheral I/O redirection function is not used. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 84 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (1/3) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK 4.0 V ≤ VDD ≤ 5.5 V, Unit MAX. 600 ns 1000 ns 2300 ns tKCY1/2 –150 ns tKCY1/2 –340 ns tKCY1/2 –916 ns tKCY1/2 –24 ns tKCY1/2 –36 ns tKCY1/2 –100 ns 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ SCKp high-level width tKH1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ SCKp low-level width tKL1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. Remarks 1. CSI01 and CSI11 cannot communicate at different potential. Rb [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp) load capacitance, Vb [V]: Communication line voltage 2. p: CSI number (p = 00, 20) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 85 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (2/3) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SIp setup time (to SCKp↑) tSIK1 Note 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Unit MAX. 162 ns 354 ns 958 ns 38 ns 38 ns 38 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ SIp hold time tKSI1 (from SCKp↑) Note 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Delay time from SCKp↓ to tKSO1 SOp output Note 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 200 ns 390 ns 966 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Note When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. (Cautions and Remarks are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 86 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock output) (3/3) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Mode MIN. SIp setup time (to SCKp↓) 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, tSIK1 Note Unit MAX. 88 ns 88 ns 220 ns 38 ns 38 ns 38 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, tKSI1 SIp hold time (from SCKp↓) Note Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Delay time from SCKp↑ to 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, tKSO1 SOp output Note 50 ns 50 ns 50 ns Cb = 30 pF, Rb = 1.4 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 30 pF, Rb = 5.5 kΩ Note When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. Remarks 1. CSI01 and CSI11 cannot communicate at different potential. Rb [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp) load capacitance, Vb [V]: Communication line voltage 2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0) CSI mode connection diagram (during communication at different potential) Vb Vb Rb SCKp RL78 microcontroller R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Rb SCK SIp SO SOp SI User's device Page 87 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1) t KCY1 t KL1 t KH1 SCKp t SIK1 SIp t KSI1 Input data t KSO1 SOp Output data CSI mode serial transfer timing (master mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) t KCY1 t KL1 t KH1 SCKp t SIK1 SIp t KSI1 Input data t KSO1 Output data SOp Remark p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 88 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (7) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Unit Mode MIN. SCKp cycle time Note 1 tKCY2 MAX. 4.0 V ≤ VDD ≤ 5.5 V, 20 MHz < fMCK ≤ 24 MHz 24/fMCK ns 2.7 V ≤ Vb ≤ 4.0 V 8 MHz < fMCK ≤ 20 MHz 20/fMCK ns 4 MHz < fMCK ≤ 8 MHz 16/fMCK ns fMCK ≤ 4 MHz 12/fMCK ns 2.7 V ≤ VDD < 4.0 V, 20 MHz < fMCK ≤ 24 MHz 32/fMCK ns 2.3 V ≤ Vb ≤ 2.7 V 16 MHz < fMCK ≤ 20 MHz 28/fMCK ns 8 MHz < fMCK ≤ 16 MHz 24/fMCK ns 4 MHz < fMCK ≤ 8 MHz 16/fMCK ns fMCK ≤ 4 MHz 12/fMCK ns 2.4 V ≤ VDD < 3.3 V, 20 MHz < fMCK ≤ 24 MHz 72/fMCK ns 1.6 V ≤ Vb ≤ 2.0 V 16 MHz < fMCK ≤ 20 MHz 64/fMCK ns 8 MHz < fMCK ≤ 16 MHz 52/fMCK ns 4 MHz < fMCK ≤ 8 MHz 32/fMCK ns fMCK ≤ 4 MHz 20/fMCK ns SCKp high-/low-level tKH2, 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V tKCY2/2 – 24 ns width tKL2 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V tKCY2/2 – 36 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V tKCY2/2 – 100 ns 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ VDD ≤ 4.0 V 1/fMCK + 40 ns 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V 1/fMCK + 40 ns 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ VDD ≤ 2.0 V 1/fMCK + 60 ns 1/fMCK + 62 ns tSIK2 SIp setup time (to SCKp↑) Note 2 tKSI2 SIp hold time (from SCKp↑) Note 3 Delay time from SCKp↓ to tKSO2 SOp output Note 4 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 2/fMCK + 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, 2/fMCK + 2/fMCK + Cb = 30 pF, Rb = 5.5 kΩ Notes 1. 2. ns 428 Cb = 30 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, ns 240 Cb = 30 pF, Rb = 1.4 kΩ ns 1146 Transfer rate in the SNOOZE mode: MAX. 1 Mbps When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. 4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0. Cautions 1. Select the TTL input buffer for the SIp and SCKp pins and the N-ch open drain output (VDD tolerance) mode for the SOp pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. CSI01 and CSI11 cannot communicate at different potential. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 89 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) CSI mode connection diagram (during communication at different potential) Vb Rb SCKp RL78 microcontroller SCK SIp SO SOp SI User's device CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.) t KCY2 t KL2 t KH2 SCKp t SIK2 t KSI2 Input data SIp t KSO2 SOp Output data Remarks 1. Rb [Ω]: Communication line (SOp) pull-up resistance, Cb [F]: Communication line (SOp) load capacitance, Vb [V]: Communication line voltage 2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 90 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) CSI mode serial transfer timing (slave mode) (during communication at different potential) (When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.) t KCY2 t KL2 t KH2 SCKp t SIK2 t KSI2 Input data SIp t KSO2 SOp Remark Output data p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 91 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) Unit Mode MIN. SCLr clock frequency fSCL 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, MAX. 100Note1 kHz 100Note1 kHz 100Note1 kHz Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 100 pF, Rb = 5.5 kΩ Hold time when SCLr = “L” tLOW 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 4600 ns 4600 ns 4650 ns 2700 ns 2400 ns 1830 ns 1/fMCK ns Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 100 pF, Rb = 5.5 kΩ Hold time when SCLr = “H” tHIGH 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 100 pF, Rb = 5.5 kΩ Data setup time (reception) tSU:DAT 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 100 pF, Rb = 5.5 kΩ Data hold time (transmission) tHD:DAT + 760 Note2 1/fMCK ns + 760 Note2 1/fMCK ns + 570 Note2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V, 0 1420 ns 0 1420 ns 0 1215 ns Cb = 100 pF, Rb = 2.8 kΩ 2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V, Cb = 100 pF, Rb = 2.7 kΩ 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V, Cb = 100 pF, Rb = 5.5 kΩ Notes 1. 2. The value must be equal to or less than fMCK/4. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”. Cautions 1. Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin and the N-ch open drain output (VDD tolerance) mode for the SCLr pin by using port input mode register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected. 2. IIC01 and IIC11 cannot communicate at different potential. (Remarks are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 92 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) Simplified I2C mode connection diagram (during communication at different potential) Vb Vb Rb Rb SDAr SDA RL78 microcontroller User's device SCLr SCL Simplified I2C mode serial transfer timing (during communication at different potential) 1/fSCL t LOW t HIGH SCLr SDAr t HD : DAT Remarks 1. t SU : DAT Rb [Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb [F]: Communication line (SDAr, SCLr) load capacitance, Vb [V]: Communication line voltage 2. r: IIC Number (r = 00, 20) 3. fMCK: Serial array unit operation clock frequency (Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode register mn (SMRmn). m: Unit number (m = 0,1), n: Channel number (n = 0)) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 93 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.5.2 Serial interface IICA (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions HS (high-speed main) mode Standard Mode MIN. MAX. Fast mode: fCLK ≥ 3.5 MHz Unit Fast Mode MIN. MAX. 0 400 SCLA0 clock frequency fSCL Setup time of restart condition tSU:STA 4.7 0.6 µs Hold timeNote 1 tHD:STA 4.0 0.6 µs Hold time when SCLA0 = “L” tLOW 4.7 1.3 µs Hold time when SCLA0 = “H” tHIGH 4.0 0.6 µs tSU:DAT 250 100 ns tHD:DAT 0 Setup time of stop condition tSU:STO 4.0 0.6 µs Bus-free time tBUF 4.7 1.3 µs Normal mode: fCLK ≥ 1 MHz Data setup time (reception) Data hold time (transmission) Notes 1. 2. Note 2 0 100 3.45 kHz kHz 0 0.9 µs The first clock pulse is generated after this period when the start/restart condition is detected. The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK (acknowledge) timing. Caution Only in the 30-pin products, the values in the above table are applied even when bit 2 (PIOR2) in the peripheral I/O redirection register (PIOR) is 1. At this time, the pin characteristics (IOH1, IOL1, VOH1, VOL1) must satisfy the values in the redirect destination. Remark The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up resistor) at that time in each mode are as follows. Normal mode: Fast mode: Cb = 400 pF, Rb = 2.7 kΩ Cb = 320 pF, Rb = 1.1 kΩ IICA serial transfer timing t LOW tR SCLA0 tHD:DAT tHD:STA t HIGH tF tSU:STA tHD:STA tSU:STO tSU:DAT SDAA0 t BUF Stop condition Start condition R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Restart condition Stop condition Page 94 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.6 Analog Characteristics 3.6.1 A/D converter characteristics Classification of A/D converter characteristics Input channel Reference Voltage Reference voltage (+) = AVREFP Reference voltage (+) = VDD Reference voltage (+) = VBGR Reference voltage (–) = AVREFM Reference voltage (–) = VSS Reference voltage (–) = AVREFM ANI0 to ANI3 Refer to 3.6.1 (1). Refer to 3.6.1 (3). Refer to 3.6.1 (4). ANI16 to ANI22 Refer to 3.6.1 (2). Internal reference voltage Refer to 3.6.1 (1). – Temperature sensor output voltage (1) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1 (ADREFM = 1), target pin: ANI2, ANI3, internal reference voltage, and temperature sensor output voltage (TA = –40 to +105°C, 2.4 V ≤ AVREFP ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) = AVREFM = 0 V) Parameter Resolution Symbol Conditions RES Note 1 MIN. TYP. 8 Overall error AINL 10-bit resolution AVREFP = VDD Note 3 Conversion time tCONV 10-bit resolution Target pin: ANI2, ANI3 10-bit resolution Target pin: Internal reference voltage, and temperature sensor output voltage (HS (high-speed main) mode) 1.2 MAX. Unit 10 bit ±3.5 LSB 3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs 2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs 2.4 V ≤ VDD ≤ 5.5 V 17 39 µs 3.6 V ≤ VDD ≤ 5.5 V 2.375 39 µs 2.7 V ≤ VDD ≤ 5.5 V 3.5625 39 µs 2.4 V ≤ VDD ≤ 5.5 V 17 39 µs Zero-scale errorNotes 1, 2 EZS 10-bit resolution AVREFP = VDD Note 3 ±0.25 %FSR Full-scale errorNotes 1, 2 EFS 10-bit resolution AVREFP = VDD Note 3 ±0.25 %FSR Integral linearity errorNote 1 ILE 10-bit resolution AVREFP = VDD Note 3 ±2.5 LSB Differential linearity error DLE 10-bit resolution AVREFP = VDD Note 3 ±1.5 LSB Note 1 Analog input voltage VAIN ANI2, ANI3 Internal reference voltage (HS (high-speed main) mode) Temperature sensor output voltage (HS (high-speed main) mode) 0 AVREFP V VBGR Note 4 V VTMPS25 Note 4 V (Notes are listed on the next page.) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 95 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. When AVREFP < VDD, the MAX. values are as follows. Overall error: Add ±1.0 LSB to the MAX. value when AVREFP = VDD. Zero-scale error/Full-scale error: Add ±0.05%FSR to the MAX. value when AVREFP = VDD. Integral linearity error/ Differential linearity error: Add ±0.5 LSB to the MAX. value when AVREFP = VDD. 4. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics. (2) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1 (ADREFM = 1), target pin: ANI16 to ANI22 (TA = –40 to +105°C, 2.4 V ≤ AVREFP ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) = AVREFM = 0 V) Parameter Resolution Symbol Conditions RES Overall error Note 1 AINL MIN. TYP. 8 10-bit resolution 1.2 MAX. Unit 10 bit ±5.0 LSB AVREFP = VDD Note 3 Conversion time tCONV 3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs Target ANI pin: ANI16 to ANI22 2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs 17 39 µs ±0.35 %FSR ±0.35 %FSR ±3.5 LSB ±2.0 LSB AVREFP V 10-bit resolution 2.4 V ≤ VDD ≤ 5.5 V Zero-scale error Notes 1, 2 EZS 10-bit resolution AVREFP = VDD Note 3 Full-scale error Notes 1, 2 EFS 10-bit resolution AVREFP = VDD Note 3 Integral linearity error Note 1 ILE 10-bit resolution AVREFP = VDD Note 3 Differential linearity DLE error Note 1 10-bit resolution AVREFP = VDD Note 3 Analog input voltage VAIN ANI16 to ANI22 0 and VDD Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. When AVREFP ≤ VDD, the MAX. values are as follows. Overall error: Add ±4.0 LSB to the MAX. value when AVREFP = VDD. Zero-scale error/Full-scale error: Add ±0.20%FSR to the MAX. value when AVREFP = VDD. Integral linearity error/ Differential linearity error: Add ±2.0 LSB to the MAX. value when AVREFP = VDD. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 96 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (3) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (–) = VSS (ADREFM = 0), target pin: ANI0 to ANI3, ANI16 to ANI22, internal reference voltage, and temperature sensor output voltage (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (–) = VSS) Parameter Symbol Resolution Conditions RES Note 1 MIN. TYP. 8 Unit 10 bit ±7.0 LSB 39 µs Overall error AINL 10-bit resolution Conversion time tCONV 10-bit resolution 3.6 V ≤ VDD ≤ 5.5 V 2.125 Target pin: ANI0 to ANI3, 2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs 2.4 V ≤ VDD ≤ 5.5 V 17 39 µs 2.375 39 µs 3.5625 39 µs 17 39 µs ANI16 to ANI22 Conversion time tCONV 1.2 MAX. 3.6 V ≤ VDD ≤ 5.5 V Target pin: internal reference 2.7 V ≤ VDD ≤ 5.5 V voltage, and temperature 2.4 V ≤ VDD ≤ 5.5 V sensor output voltage (HS 10-bit resolution (high-speed main) mode) Notes 1, 2 Zero-scale error Notes 1, 2 Full-scale error Integral linearity error Note 1 Differential linearity error Analog input voltage Note 1 EZS 10-bit resolution ±0.60 %FSR EFS 10-bit resolution ±0.60 %FSR ILE 10-bit resolution ±4.0 LSB DLE 10-bit resolution ±2.0 LSB VAIN ANI0 to ANI3, ANI16 to ANI22 VDD V 0 Internal reference voltage VBGR Note 3 V (HS (high-speed main) mode) Temperature sensor output voltage VTMPS25 Note 3 V (HS (high-speed main) mode) Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 97 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) (4) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (–) = AVREFM (ADREFM = 1), target pin: ANI0, ANI2, ANI3, and ANI16 to ANI22 (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VBGR Note 3, Reference voltage (–) = AVREFM Note 4 = 0 V, HS (high-speed main) mode) Parameter Symbol Resolution Conditions MIN. RES Conversion time Notes 1, 2 Zero-scale error Integral linearity error Note 1 Differential linearity error Note 1 Analog input voltage TYP. MAX. 8 tCONV 8-bit resolution EZS Unit bit 39 µs 8-bit resolution ±0.60 %FSR ILE 8-bit resolution ±2.0 LSB DLE 8-bit resolution ±1.0 LSB VAIN 17 0 VBGR Note 3 V Notes 1. Excludes quantization error (±1/2 LSB). 2. This value is indicated as a ratio (%FSR) to the full-scale value. 3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics. 4. When reference voltage (–) = VSS, the MAX. values are as follows. Zero-scale error: Add ±0.35%FSR to the MAX. value when reference voltage (–) = AVREFM. Integral linearity error: Add ±0.5 LSB to the MAX. value when reference voltage (–) = AVREFM. Differential linearity error: Add ±0.2 LSB to the MAX. value when reference voltage (–) = AVREFM. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 98 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.6.2 Temperature sensor/internal reference voltage characteristics (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, HS (high-speed main) mode Parameter Symbol Temperature sensor output voltage VTMPS25 Conditions MIN. Setting ADS register = 80H, TYP. MAX. 1.05 Unit V TA = +25°C Internal reference voltage VBGR Temperature coefficient FVTMPS Setting ADS register = 81H 1.38 Temperature sensor output 1.45 1.50 –3.6 V mV/°C voltage that depends on the temperature Operation stabilization wait time tAMP 5 µs 3.6.3 POR circuit characteristics (TA = –40 to +105°C, VSS = 0 V) Parameter Symbol Detection voltage VPOR Conditions The power supply voltage is MIN. TYP. MAX. Unit 1.45 1.51 1.57 V 1.44 1.50 1.56 V rising. VPDR The power supply voltage is falling. Minimum pulse width Note Note TPW 300 µs Minimum time required for a POR reset when VDD exceeds below VPDR. This is also the minimum time required for a POR reset from when VDD exceeds below 0.7 V to when VDD exceeds VPOR while STOP mode is entered or the main system clock is stopped through setting bit 0 (HIOSTOP) and bit 7 (MSTOP) in the clock operation status control register (CSC). TPW Supply voltage (VDD) VPOR VPDR or 0.7 V R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 99 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.6.4 LVD circuit characteristics LVD Detection Voltage of Reset Mode and Interrupt Mode (TA = –40 to +105°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Detection supply voltage Symbol VLVD0 VLVD1 VLVD2 VLVD3 VLVD4 VLVD5 VLVD6 VLVD7 Minimum pulse width Detection delay time R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 tLW Conditions MIN. TYP. MAX. Unit The power supply voltage is rising. 3.90 4.06 4.22 V The power supply voltage is falling. 3.83 3.98 4.13 V The power supply voltage is rising. 3.60 3.75 3.90 V The power supply voltage is falling. 3.53 3.67 3.81 V The power supply voltage is rising. 3.01 3.13 3.25 V The power supply voltage is falling. 2.94 3.06 3.18 V The power supply voltage is rising. 2.90 3.02 3.14 V The power supply voltage is falling. 2.85 2.96 3.07 V The power supply voltage is rising. 2.81 2.92 3.03 V The power supply voltage is falling. 2.75 2.86 2.97 V The power supply voltage is rising. 2.70 2.81 2.92 V The power supply voltage is falling. 2.64 2.75 2.86 V The power supply voltage is rising. 2.61 2.71 2.81 V The power supply voltage is falling. 2.55 2.65 2.75 V The power supply voltage is rising. 2.51 2.61 2.71 V The power supply voltage is falling. 2.45 2.55 2.65 300 V µs 300 µs Page 100 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) LVD detection voltage of interrupt & reset mode (TA = –40 to +105°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Interrupt and reset VLVDD0 mode VLVDD1 Conditions MIN. TYP. MAX. Unit 2.64 2.75 2.86 V Rising reset release voltage 2.81 2.92 3.03 V Falling interrupt voltage 2.75 2.86 2.97 V Rising reset release voltage 2.90 3.02 3.14 V Falling interrupt voltage 2.85 2.96 3.07 V Rising reset release voltage 3.90 4.06 4.22 V Falling interrupt voltage 3.83 3.98 4.13 V VPOC2, VPOC1, VPOC1 = 0, 1, 1, falling reset voltage VLVDD2 VLVDD3 LVIS1, LVIS0 = 1, 0 LVIS1, LVIS0 = 0, 1 LVIS1, LVIS0 = 0, 0 3.6.5 Power supply voltage rising slope characteristics (TA = –40 to +105°C, VSS = 0 V) Parameter Power supply voltage rising slope Caution Symbol Conditions SVDD MIN. TYP. MAX. Unit 54 V/ms Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the operating voltage range shown in 3.4 AC Characteristics. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 101 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.7 RAM Data Retention Characteristics (TA = –40 to +105°C, VSS = 0 V) Parameter Data retention supply voltage Note Symbol Conditions MIN. TYP. MAX. Unit 5.5 V 1.44 Note VDDDR This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated. Operation mode STOP mode RAM data retention VDD VDDDR STOP instruction execution Standby release signal (interrupt request) 3.8 Flash Memory Programming Characteristics (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol System clock frequency fCLK Code flash memory rewritable times Cerwr Conditions MIN. TYP. 1 Retained for 20 years Notes 1, 2, 3 TA = 85°C Data flash memory rewritable times Retained for 1 year Notes 1, 2, 3 TA = 25°C Unit 24 MHz Times Note 4 Retained for 5 years TA = 85°C 1,000 MAX. 1,000,000 100,000 Note 4 Retained for 20 years 10,000 TA = 85°C Note 4 Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. 2. When using flash memory programmer and Renesas Electronics self programming library 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. 4. This temperature is the average value at which data are retained. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 102 of 108 RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) 3.9 Dedicated Flash Memory Programmer Communication (UART) (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Transfer rate Conditions MIN. During serial programming TYP. 115,200 MAX. Unit 1,000,000 bps 3.10 Timing of Entry to Flash Memory Programming Modes (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Time to complete the communication for the initial tSUINIT setting after the external reset is released Conditions MIN. POR and LVD reset are released TYP. MAX. Unit 100 ms before external release Time to release the external reset after the TOOL0 POR and LVD reset are released tSU 10 µs 1 ms before external release pin is set to the low level Time to hold the TOOL0 pin at the low level after the tHD POR and LVD reset are released external reset is released before external release (excluding the processing time of the firmware to control the flash memory) RESET tHD + software processing time 1-byte data for setting mode TOOL0 tSU tSUINIT The low level is input to the TOOL0 pin. The external reset is released (POR and LVD reset must be released before the external reset is released.). The TOOL0 pin is set to the high level. Setting of the flash memory programming mode by UART reception and complete the baud rate setting. Remark tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released during this period. tSU: Time to release the external reset after the TOOL0 pin is set to the low level tHD: Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing time of the firmware to control the flash memory) R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 103 of 108 RL78/G12 4. PACKAGE DRAWINGS 4. PACKAGE DRAWINGS 4.1 20-pin package JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g] P-LSSOP20-4.4x6.5-0.65 PLSP0020JB-A P20MA-65-NAA-1 0.1 2 D detail of lead end 11 20 E 1 c 10 1 L 3 bp A A2 A1 HE e y (UNIT:mm) NOTE 1.Dimensions “ 2.Dimension “ 1” and “ 2” ” does not include tr ITEM DIMENSIONS D E 6.50 0.10 4.40 0.10 HE 6.40 0.20 A 1.45 MAX. A1 0.10 0.10 A2 1.15 e bp c L y 0.65 0.12 0.22 0.10 0.05 0.15 0.05 0.02 0.50 0.20 0.10 0 to 10 2012 Renesas Electronics Corporation. All rights reserved. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 104 of 108 RL78/G12 R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 4. PACKAGE DRAWINGS Page 105 of 108 RL78/G12 4. PACKAGE DRAWINGS 4.2 24-pin package JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g] P-HWQFN24-4x4-0.50 PWQN0024KE-A P24K8-50-CAB-1 0.04 D DETAIL OF A PART E S A A S y S (UNIT:mm) ITEM D2 A EXPOSED DIE PAD 1 6 D 4.00 0.05 E 4.00 0.05 A 0.75 0.05 b 0.25 0.05 0.07 e 7 24 Lp B DIMENSIONS 0.50 0.40 0.10 x 0.05 y 0.05 E2 ITEM 19 12 18 EXPOSED DIE PAD VARIATIONS 13 D2 E2 MIN NOM MAX MIN NOM MAX A 2.45 2.50 2.55 2.45 2.50 2.55 e Lp b x M S AB 2012 Renesas Electronics Corporation. All rights reserved. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 106 of 108 RL78/G12 4. PACKAGE DRAWINGS JEITA Package code RENESAS code MASS(TYP.)[g] P-HWQFN024-4x4-0.50 PWQN0024KF-A 0.04 2X aaa C 18 13 19 12 D INDEX AREA (D/2 X E/2) 24 2X 7 aaa C 6 1 A E B ccc C C SEATING PLANE A (A3) A1 b(24X) e 24X bbb ddd eee C E2 fff 1 fff C A B 24 7 EXPOSED DIE PAD D2 19 12 18 13 L(24X) Reference Symbol Dimension in Millimeters Min. Nom. A – – 0.80 A1 0.00 0.02 0.05 A3 6 C A B R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 C A B C K(24X) b Max. 0.203 REF. 0.18 D 0.25 0.30 4.00 BSC E 4.00 BSC e 0.50 BSC L 0.35 0.40 0.45 K 0.20 – – D2 2.55 2.60 2.65 E2 2.55 2.60 2.65 aaa 0.15 bbb 0.10 ccc 0.10 ddd 0.05 eee 0.08 fff 0.10 Page 107 of 108 RL78/G12 4. PACKAGE DRAWINGS 4.3 30-pin package JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g] P-LSSOP30-0300-0.65 PLSP0030JB-B S30MC-65-5A4-3 0.18 30 16 detail of lead end F G T P 1 L 15 U E A H I J S C D N M S B M K ITEM A MILLIMETERS 9.85 0.15 B 0.45 MAX. C 0.65 (T.P.) NOTE D 0.24 0.08 0.07 Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. E 0.1 0.05 F 1.3 0.1 G 1.2 H 8.1 0.2 I 6.1 0.2 J 1.0 0.2 K 0.17 0.03 L 0.5 M 0.13 N 0.10 P 3 T 0.25 U 0.6 0.15 5 3 2012 Renesas Electronics Corporation. All rights reserved. R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 Page 108 of 108 Revision History Rev. 1.00 2.00 RL78/G12 Datasheet Date Dec 10, 2012 Sep 06, 2013 Description Summary Page 1 3 4 7 to 9 14 17 First Edition issued Modification of 1.1 Features Modification of 1.2 List of Part Numbers Modification of Table 1-1. List of Ordering Part Numbers, Note, and Caution Modification of package name in 1.4.1 to 1.4.3 Modification of tables in 1.7 Outline of Functions Modification of description of table in 2.1 Absolute Maximum Ratings (TA = 25°C) 18 18 19 20 23 Modification of table, Note, and Caution in 2.2.1 X1 oscillator characteristics Modification of table in 2.2.2 On-chip oscillator characteristics Modification of Note 3 in 2.3.1 Pin characteristics (1/4) Modification of Note 3 in 2.3.1 Pin characteristics (2/4) Modification of Notes 1 and 2 in (1) 20-, 24-pin products (1/2) Modification of Notes 1 and 3 in (1) 20-, 24-pin products (2/2) Modification of Notes 1 and 2 in (2) 30-pin products (1/2) Modification of Notes 1 and 3 in (2) 30-pin products (2/2) Modification of (3) Peripheral functions (Common to all products) Modification of table in 2.4 AC Characteristics Addition of Minimum Instruction Execution Time during Main System Clock Operation 24 25 26 27 28 29 30 Modification of figures of AC Timing Test Point and External Main System Clock Timing 31 Modification of figure of AC Timing Test Point Modification of description and Note 2 in (1) During communication at same potential (UART mode) 31 32 Modification of description in (2) During communication at same potential (CSI mode) 33 Modification of description in (3) During communication at same potential (CSI mode) 34 Modification of description in (4) During communication at same potential (CSI mode) 36 Modification of table and Note 2 in (5) During communication at same potential (simplified I2C mode) 38, 39 Modification of table and Notes 1 to 9 in (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) 40 Modification of Remarks 1 to 3 in (6) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode) 41 Modification of table in (7) Communication at different potential (2.5 V, 3 V) (CSI mode) 42 Modification of Caution in (7) Communication at different potential (2.5 V, 3 V) (CSI mode) 43 Modification of table in (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (1/3) 44 Modification of table and Notes 1 and 2 in (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (2/3) 45 Modification of table, Note 1, and Caution 1 in (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (3/3) 47 Modification of table in (9) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) 50 Modification of table, Note 1, and Caution 1 in (10) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode) C-1 Rev. 2.00 Page Date Sep 06, 2013 52 53 53 54 54 55 56 57 57 58 59 59 2.10 Mar 25, 2016 2.20 Oct 31, 2018 2.21 Jan 31, 2020 2.22 Apr 28, 2020 Description Summary Modification of Remark in 2.5.2 Serial interface IICA Addition of table to 2.6.1 A/D converter characteristics Modification of description in 2.6.1 (1) Modification of Notes 3 to 5 in 2.6.1 (1) Modification of description and Notes 2 to 4 in 2.6.1 (2) Modification of description and Notes 3 and 4 in 2.6.1 (3) Modification of description and Notes 3 and 4 in 2.6.1 (4) Modification of table in 2.6.2 Temperature sensor/internal reference voltage characteristics Modification of table and Note in 2.6.3 POR circuit characteristics Modification of table in 2.6.4 LVD circuit characteristics Modification of table of LVD detection voltage of interrupt & reset mode Modification of number and title to 2.6.5 Power supply voltage rising slope characteristics 61 Modification of table, figure, and Remark in 2.10 Timing of Entry to Flash Memory Programming Modes 62 to 103 104 to 106 Addition of products of industrial applications (G: TA = -40 to +105°C) Addition of products of industrial applications (G: TA = -40 to +105°C) 6 Modification of Figure 1-1 Part Number, Memory Size, and Package of RL78/G12 7 8 Modification of Table 1-1 List of Ordering Part Numbers Addition of product name (RL78/G12) and description (Top View) in 1.4.1 20pin products 9 Addition of product name (RL78/G12) and description (Top View) in 1.4.2 24pin products 10 Addition of product name (RL78/G12) and description (Top View) in 1.4.3 30pin products 15 16 52 60 Modification of description in 1.7 Outline of Functions Modification of description, and addition of target products Modification of note 2 in 2.5.2 Serial interface IICA Modification of title and note, and addition of caution in 2.7 RAM Data Retention Characteristics 60 62 94 102 Modification of conditions in 2.8 Flash Memory Programming Characteristics Modification of description, and addition of target products and remark Modification of note 2 in 3.5.2 Serial interface IICA Modification of title and note in 3.7 RAM Data Retention Characteristics 102 104 to 106 Modification of conditions in 3.8 Flash Memory Programming Characteristics Addition of package name 4 7 3 Modification of Table 1-1 List of Ordering Part Numbers Modification of pin configuration diagram in 1.4.1 20-pin products Addition of packaging specifications in Figure 1-1 Part Number, Memory Size, and Package of RL78/G12 4, 5 Addition of part numbers and RENESAS codes in Table 1-1 List of Ordering Part Numbers 105, 106, 108 Modification of the titles of the subchapters and deletion of product names in Chapter 4 107 3 Addition of figure in 4.2 24-pin package Addition of packaging specifications and package type in Figure 1-1 Part Number, Memory Size, and Package of RL78/G12 4 Addition of packaging specifications in Table 1-1 List of Ordering Part Numbers 9 107 Addition of packaging specifications in 1.4.1 20-pin products Addition of figure in 4.1 20-pin package C-2 Rev. 2.30 Page Date Jun 19, 2020 Description Summary 3 Modification of Figure 1-1 Part Number, Memory Size, and Package of RL78/G12 4 Modification of Table 1-1 List of Ordering Part Numbers All trademarks and registered trademarks are the property of their respective owners. SuperFlash is a registered trademark of Silicon Storage Technology, Inc. in several countries including the United States and Japan. Caution: This product uses SuperFlash® technology licensed from Silicon Storage Technology, Inc. C-3 General Precautions in the Handling of Microprocessing Unit and Microcontroller Unit Products The following usage notes are applicable to all Microprocessing unit and Microcontroller unit products from Renesas. For detailed usage notes on the products covered by this document, refer to the relevant sections of the document as well as any technical updates that have been issued for the products. 1. Precaution against Electrostatic Discharge (ESD) A strong electrical field, when exposed to a CMOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop the generation of static electricity as much as possible, and quickly dissipate it when it occurs. Environmental control must be adequate. When it is dry, a humidifier should be used. This is recommended to avoid using insulators that can easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors must be grounded. The operator must also be grounded using a wrist strap. Semiconductor 2. devices must not be touched with bare hands. Similar precautions must be taken for printed circuit boards with mounted semiconductor devices. Processing at power-on The state of the product is undefined at the time when power is supplied. The states of internal circuits in the LSI are indeterminate and the states of register settings and pins are undefined at the time when power is supplied. In a finished product where the reset signal is applied to the external reset pin, the states of pins are not guaranteed from the time when power is supplied until the reset process is completed. In a similar way, the states of pins in a product that is reset by an on-chip power-on reset function are not guaranteed from the time when power is supplied until the power reaches the 3. level at which resetting is specified. Input of signal during power-off state Do not input signals or an I/O pull-up power supply while the device is powered off. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal 4. elements. Follow the guideline for input signal during power-off state as described in your product documentation. Handling of unused pins Handle unused pins in accordance with the directions given under handling of unused pins in the manual. The input pins of CMOS products are generally in the high-impedance state. In operation with an unused pin in the open-circuit state, extra electromagnetic noise is induced in the vicinity of the LSI, an associated shoot-through current flows internally, and malfunctions occur due to the false recognition of the pin state as an input signal 5. become possible. Clock signals After applying a reset, only release the reset line after the operating clock signal becomes stable. When switching the clock signal during program execution, wait until the target clock signal is stabilized. When the clock signal is generated with an external resonator or from an external oscillator during a reset, ensure that the reset line is only released after full stabilization of the clock signal. Additionally, when switching to a clock signal 6. produced with an external resonator or by an external oscillator while program execution is in progress, wait until the target clock signal is stable. Voltage application waveform at input pin Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (Max.) and VIH (Min.) due to noise, for example, the device may malfunction. Take care to prevent chattering noise from entering the device when the 7. input level is fixed, and also in the transition period when the input level passes through the area between VIL (Max.) and VIH (Min.). Prohibition of access to reserved addresses Access to reserved addresses is prohibited. The reserved addresses are provided for possible future expansion of functions. Do not access these 8. addresses as the correct operation of the LSI is not guaranteed. Differences between products Before changing from one product to another, for example to a product with a different part number, confirm that the change will not lead to problems. The characteristics of a microprocessing unit or microcontroller unit products in the same group but having a different part number might differ in terms of internal memory capacity, layout pattern, and other factors, which can affect the ranges of electrical characteristics, such as characteristic values, operating margins, immunity to noise, and amount of radiated noise. When changing to a product with a different part number, implement a systemevaluation test for the given product. Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by 5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for each Renesas Electronics product depends on the you or third parties arising from such alteration, modification, copying or reverse engineering. product’s quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document. 6. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application notes, “General Notes for Handling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document. 11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. (Rev.4.0-1 November 2017) http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics Corporation TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan Renesas Electronics America Inc. Milpitas Campus 1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A. Tel: +1-408-432-8888, Fax: +1-408-434-5351 Renesas Electronics America Inc. San Jose Campus 6024 Silver Creek Valley Road, San Jose, CA 95138, USA Tel: +1-408-284-8200, Fax: +1-408-284-2775 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 101-T01, Floor 1, Building 7, Yard No. 7, 8th Street, Shangdi, Haidian District, Beijing 100085, China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai 200333, China Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, #06-02 Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit No 3A-1 Level 3A Tower 8 UOA Business Park, No 1 Jalan Pengaturcara U1/51A, Seksyen U1, 40150 Shah Alam, Selangor, Malaysia Tel: +60-3-5022-1288, Fax: +60-3-5022-1290 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India Tel: +91-80-67208700 Renesas Electronics Korea Co., Ltd. 17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea Tel: +82-2-558-3737, Fax: +82-2-558-5338 © 2020 Renesas Electronics Corporation. All rights reserved. Colophon 9.0
R5F1036AASP#35 价格&库存

很抱歉,暂时无法提供与“R5F1036AASP#35”相匹配的价格&库存,您可以联系我们找货

免费人工找货