RJH60F7ADPK-00-T0

Preliminary Datasheet RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Colloector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-c Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Page 1 of 6 RJH60F7ADPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 trr Min   4            Typ    1.35 1.6 4700 198 83 48 30 110 95 1.6 140 Max 100 ±1 8 1.75         2.1  Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note3 IC = 90 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5  IF = 20 A Note3 C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test IF = 20 A diF/dt = 100 A/s REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Page 2 of 6 RJH60F7ADPK Preliminary Main Characteristics Maximum Safe Operation Area 1000 160 Typical Output Characteristics Pulse Test Ta = 25°C 10 V 120 15 V 8.8 V 80 8.6 V 8.4 V 40 8.2 V VGE = 8 V 9.4 V 9.6 V 9.8 V 9.2 V 9V Collector Current IC (A) 100 PW = 10 μs 10 1 Tc = 25°C Single pulse 10 100 1000 0.1 1 Collector Current IC (A) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) 10 0μ s 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 7 6 5 4 3 2 1 0 6 8 10 12 14 16 18 20 IC = 20 A 50 A 90 A Pulse Test Ta = 25°C 160 Collector Current IC (A) Pulse TestV VCE = 10 Ta = 25°C Pulse Test 120 80 Tc = 75°C 40 25°C –25°C 0 0 2 4 6 8 10 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 8 7 IC = 10 mA 6 5 1 mA 4 3 2 −25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 50 A 20 A IC = 90 A Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Junction Temparature Tj (°C) Junction Temparature Tj (°C) REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Page 3 of 6 RJH60F7ADPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage 10000 VGE = 0 V Pulse Test Ta = 25°C Cies Forward Current vs. Forward Voltage (Typical) 100 Forward Current IF (A) Capacitance C (pF) 80 1000 60 40 100 Coes VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150 200 Cres 20 0 0 1 2 3 4 5 10 250 300 C-E Diode Forward Voltage VCEF (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Collector to Emitter Voltage VCE (V) VGE 12 VCC = 600 V 300 V 400 8 Switching Characteristics (Typical) (1) Gate to Emitter Voltage VGE (V) 1000 800 Switching Time t (ns) 600 IC = 50 A Ta = 25°C VCE 16 td(off) 100 td(on) 10 tr tf 200 VCC = 600 V 300 V 0 0 40 80 120 160 4 0 200 1 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C, Resistive load 10 100 1000 Gate Charge Qg (nc) Collector Current IC (A) Switching Characteristics (Typical) (2) 10000 IC = 50 A, RL = 6 Ω VGE = 15 V, Ta = 25°C Switching Characteristics (Typical) (3) 1000 IC = 50 A, VGE = 15 V RL = 6 Ω, Rg = 5 Ω Switching Time t (ns) 1000 Switching Time t (ns) td(off) 100 tf td(on) tr 100 td(off) tf 10 1 td(on) tr 10 10 100 0 20 40 60 80 100 120 140 Gate Resistance Rg (Ω) Case Temperature Tc (°C) REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Page 4 of 6 RJH60F7ADPK Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C Preliminary 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 0.38°C/W, Tc = 25°C PDM 0.01 0.1 0.05 0.0 2 D= PW T PW T 1 shot pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C PDM 0.01 0.1 0.05 0.0 2 D= PW T PW T 1 shot pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width Switching Time Test Circuit Ic Monitor RL Vin Monitor PW (s) Waveform 90% Vin 10% 90% 90% Rg Vin = 15 V D.U.T. VCC Ic td(on) ton 10% tr 10% td(off) toff tf REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Page 5 of 6 RJH60F7ADPK Preliminary Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5 .0 ± 0 .3 Unit: mm 1.5 15.6 ± 0.3 4.8 ± 0.2 0.5 1 .0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJH60F7ADPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container REJ03G1837-0200 Rev.2.00 Jun 11, 2010 0.3 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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