RJH60F7ADPK_11

Preliminary Datasheet RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features R07DS0237EJ0300 (Previous: REJ03G1837-0200) Rev.3.00 Jan 05, 2011  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-c Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C R07DS0237EJ0300 Rev.3.00 Jan 05, 2011 Page 1 of 7 RJH60F7ADPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 trr Min   4            Typ    1.35 1.6 4700 198 83 63 81 142 74 1.6 140 Max 100 ±1 8 1.75         2.1  Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note3 IC = 90 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note3 Inductive load IF = 20 A Note3 C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test IF = 20 A diF/dt = 100 A/s R07DS0237EJ0300 Rev.3.00 Jan 05, 2011 Page 2 of 7 RJH60F7ADPK Preliminary Main Characteristics Maximum Safe Operation Area 1000 160 Typical Output Characteristics Pulse Test Ta = 25°C 10 V 120 15 V 8.8 V 80 8.6 V 8.4 V 40 8.2 V VGE = 8 V 9.4 V 9.6 V 9.8 V 9.2 V 9V Collector Current IC (A) 100 PW = 10 μs 10 1 Tc = 25°C Single pulse 10 100 1000 0.1 1 Collector Current IC (A) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) 10 0μ s 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 7 6 5 4 3 2 1 0 6 8 10 12 14 16 18 20 IC = 20 A 50 A 90 A Pulse Test Ta = 25°C 160 Collector Current IC (A) Pulse TestV VCE = 10 Ta = 25°C Pulse Test 120 80 Tc = 75°C 40 25°C –25°C 0 0 2 4 6 8 10 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 8 7 IC = 10 mA 6 5 1 mA 4 3 2 −25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 50 A 20 A IC = 90 A Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Junction Temparature Tj (°C) Junction Temparature Tj (°C) R07DS0237EJ0300 Rev.3.00 Jan 05, 2011 Page 3 of 7 RJH60F7ADPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage 10000 VGE = 0 V Pulse Test Ta = 25°C Cies Forward Current vs. Forward Voltage (Typical) 100 Forward Current IF (A) Capacitance C (pF) 80 1000 60 40 100 Coes VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150 200 Cres 20 0 0 1 2 3 4 5 10 250 300 C-E Diode Forward Voltage VCEF (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Collector to Emitter Voltage VCE (V) VGE 12 VCC = 600 V 300 V 400 8 600 200 VCC = 600 V 300 V 0 0 40 80 120 160 4 0 200 Gate Charge Qg (nc) R07DS0237EJ0300 Rev.3.00 Jan 05, 2011 Gate to Emitter Voltage VGE (V) 800 IC = 50 A Ta = 25°C VCE 16 Page 4 of 7 RJH60F7ADPK Switching Characteristics (Typical) (1) 1000 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tr includes the diode recovery tf 100 td(off) tr td(on) Preliminary Switching Characteristics (Typical) (2) 100000 Swithing Energy Losses E (μJ) Switching Times t (ns) 10000 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C Eon includes the diode recovery 1000 Eoff 100 Eon 10 1 10 100 200 10 1 10 100 200 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) 200 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) 1600 160 td(off) Swithing Energy Losses E (μJ) Switching Times t (ns) 1200 Eoff 800 Eon 400 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon includes the diode recovery 0 0 25 50 75 100 125 150 120 tr tf td(on) 40 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω tr includes the diode recovery 0 25 50 75 100 125 150 80 0 Junction Temperature Tj (°C) (Inductive load) Junction Temperature Tj (°C) (Inductive load) R07DS0237EJ0300 Rev.3.00 Jan 05, 2011 Page 5 of 7 RJH60F7ADPK Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C Preliminary 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 0.38°C/W, Tc = 25°C PDM 0.01 0.1 0.05 0.0 2 D= PW T PW T 1 shot pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) Normalized Transient Thermal Impedance γs (t) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C PDM 0.01 0.1 0.05 0.0 2 D= PW T PW T 1 shot pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width Switching Time Test Circuit PW (s) Waveform 90% Diode clamp L VGE 10% 90% 90% IC D.U.T Rg VCE VCC 10% td(on) ton tr 10% 1% td(off) tf ttail toff 10% R07DS0237EJ0300 Rev.3.00 Jan 05, 2011 Page 6 of 7 RJH60F7ADPK Preliminary Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5 .0 ± 0 .3 Unit: mm 1.5 15.6 ± 0.3 4.8 ± 0.2 0.5 1 .0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Orderable Part Number RJH60F7ADPK-00-T0 Quantity 360 pcs Shipping Container Box (Tube) R07DS0237EJ0300 Rev.3.00 Jan 05, 2011 0.3 Page 7 of 7 Notice 1. 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