RJK0629DPE

Preliminary RJK0629DPE N Channel Power MOS FET High-Speed Switching Use Features • VDSS: 60 V • RDS(on): 4.5 mΩ (Max) • ID: 85 A REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1 1G 2 3 1. 2. 3. 4. Gate Drain Source Drain S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C, Tch ≤ 150°C, L = 100 μH 3. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note2 Pch Note3 θch-c Tch Tstg Value 60 ±20 85 340 85 340 55 100 1.25 150 –55 to +150 Unit V V A A A A A W °C/W °C °C REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Page 1 of 6 RJK0629DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) VDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.0 — — — — — — — — — — — — — — — Typ — — — — — 161 3.75 4.9 4100 1000 780 85 11 25 20 40 100 40 0.92 50 Max — — 1 ±10 2.0 194 4.5 6.6 — — — — — — — — — — 1.2 — Unit V V μA μA V mV mΩ mΩ pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 100 μA, VGS = 0 IG = ±100 μA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±20 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 43A, VGS = 10 V Note4 ID = 43A, VGS = 10 V Note4 ID = 43 A, VGS = 4.5 V Note4 VDS = 10 V, VGS = 0 f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 85 A VDD = 30V, ID= 43A, VGS = 10 V, RG = 4.7 Ω IF = 85 A, VGS = 0 Note4 IF = 85 A, VGS = 0, diF/dt = 100 A/μs REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Page 2 of 6 RJK0629DPE Preliminary Main Characteristics Power vs. Temperature Derating 200 1000 10 μs Maximum Safe Operation Area Pch (W) ID (A) 150 100 1 10 0 μs s m Channel Dissipation 10 Operation in PW 100 Drain Current = 10 m DC Op 1 this area is limited by RDS(on) s er at ion 50 0.1 0.01 0.1 Tc = 25°C 1 shot Pulse 0 50 100 150 200 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 5V 100 3V Typical Transfer Characteristics Tc = 175°C Drain Current ID (A) Drain Current ID (A) 80 10 25°C −40°C 60 VGS = 2.7 V 1 40 0.1 20 Tc = 25°C Pulse Test 0 5 10 0.01 0.001 0 VDS = 10 V Pulse Test 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Gate to Source Voltage Drain to Source on State Resistance RDS (on) (mΩ) 20 ID = 43 A Pulse Test 15 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 100 Tc = 25°C Pulse Test 10 Tc = 175°C 10 VGS = 4.5 V 10 V 5 25°C −40°C 0 0 4 8 12 16 20 1 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Page 3 of 6 RJK0629DPE Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test ID = 43 A 10000 Preliminary Typical Capacitance vs. Drain to Source Voltage Static Drain to Source on State Resistance RDS(on) (mΩ) Capacitance C (pF) 16 Ciss 3000 12 VGS = 4.5 V 8 1000 Coss Crss Tc = 25°C VGS = 0 f = 1 MHz 0 5 10 15 20 25 30 4 10 V 300 0 −50 100 0 50 100 150 200 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 50 VGS 16 Reverse Drain Current vs. Source to Drain Voltage 20 100 Reverse Drain Current IDR (A) Tc = 25°C ID = 85 A VDD = 25 V 10 V 5V VDS 10 V 80 Tc = 25°C Pulse Test 40 30 12 60 20 VDD = 25 V 10 V 5V 40 80 120 160 8 40 VGS = 0, −5 V 10 4 0 200 20 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 500 IAP = 55 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω Source to Drain Voltage VSD (V) 400 300 200 100 0 25 50 75 100 125 150 175 Channel Temperature Tch (°C) REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Page 4 of 6 RJK0629DPE Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Preliminary 1 D=1 0.5 0.2 0.1 0.1 0.05 θch – c(t) = γs (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C 0.01 p ot uls e PDM PW T D= 0.02 1 sh PW T 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor L IAP Monitor EAR = Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V (BR)DSS Rg D. U. T VDD IAP VDS Vin 15 V 50 Ω ID 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 30 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Page 5 of 6 RJK0629DPE Preliminary Package Dimensions Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 ± 0.2 10.2 ± 0.3 (1.4) 8.6 ± 0.3 + 0.3 – 0.5 10.0 (1.5) (1.5) 2.49 ± 0.2 02 0.1 + 0..1 – 7.8 7.0 2.2 1.37 ± 0.2 1.3 ± 0.2 2.54 ± 0.5 03 3.0 + 0..5 – 02 0.86 + 0..1 – 0.4 ± 0.1 2.54 ± 0.5 Ordering Information Part No. RJK0629DPE-00-J3 Quantity 1000 pcs Taping Shipping Container REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Page 6 of 6 1.7 1.3 ± 0.15 7.8 6.6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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