RJK1021DPN

RJK1021DPN N-Channel Power MOSFET High-Speed Switching Use REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID : 70 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1G 1. Gate 2. Drain 3. Source 4. Drain S 3 1 2 3 Application • Motor control, Solenoid control, DC-DC converter, etc. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25°C 2. STch = 25°C, Tch ≤ 150°C, L = 100 µH Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP Note2 Pch Note1 θch-c Tch Tstg Ratings 100 ±20 70 140 70 140 35 100 1.25 150 –55 to +150 Unit V V A A A A A W °C/W °C °C REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Page 1 of 6 RJK1021DPN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 — — 2.0 — — — — — — — — — — — Typ — — — 3.0 0.56 16 2600 430 160 30 70 110 65 0.9 80 Max — 100 ±0.1 4.0 0.70 20 — — — — — — — 1.5 — Unit V µA µA V V mΩ pF pF pF ns ns ns ns V ns Test conditions ID = 1 mA, VGS = 0 VDS = 100 V, VGS = 0 VGS = ±20 V, VDS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 35 A, VGS = 10 V Note3 ID = 35 A, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V ID = 35 A VGS = 10 V RG = 25 Ω IF = 35 A, VGS = 0 IF = 70 A, VGS = 0 diF/dt = 100 A/µs REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Page 2 of 6 RJK1021DPN Main Characteristics Power vs. Temperature Derating 120 1000 Maximum Safe Operation Area Ta = 25°C 10 10 0 µs s 1m Channel Dissipation Pch (W) 80 60 40 20 Drain Current ID (A) 100 100 µs 10 DC Operation (Tc = 25°C) 1 PW = 10 ms (1shot) 0.1 Operation in this 0.01 0.1 area is limited by RDS(on) 0 50 100 150 200 1 10 100 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 6V 8V Typical Transfer Characteristics 100 VDS = 10 V Pulse Test 5V Drain Current ID (A) Drain Current ID (A) 80 80 60 4.6 V 60 40 40 Tc = 75°C 20 VGS = 4 V Pulse Test 20 25°C −25°C 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) 100 VGS = 10 V Drain to Source on State Resistance vs. Gate to Source Voltage Drain to Source on State Resistance RDS(on) (mΩ) 35 Pulse Test 30 25 10 20 ID = 70 A 15 10 A 35 A 10 1 1 10 Pulse Test 0 4 8 12 16 20 100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Page 3 of 6 RJK1021DPN Drain to Source on State Resistance vs. Temperature 40 VGS = 10 V Pulse Test Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) 1000 30 100 Tc = −25°C 20 ID = 50 A 35 A 10 A 10 75°C 25°C 10 1 VDS = 10 V Pulse Test 0 −25 0 25 50 75 100 125 150 0.1 0.1 1 10 100 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss Reverse Recovery Time trr (ns) 100 Capacitance C (pF) 1000 Coss 100 Crss VGS = 0 f = 1 MHz di / dt = −100 A / µs VGS = 0, Ta = 25°C 10 0.1 10 1 10 100 1 10 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics Drain to Source Voltage VDS (V) 120 VGS VDS 12 Switching Time t (ns) VDD = 25 V 50 V 80 V ID = 70 A Gate to Source Voltage VGS (V) 160 16 1000 VGS = 10 V, VDD = 50 V PW = 5 µs, duty ≤ 1 % R G = 25 Ω td(off) 80 8 100 tf 40 VDD = 80 V 50 V 25 V 4 td(on) tr 0 72 96 120 0 24 48 10 0.1 1 10 100 Gate Charge Qg (nC) Drain Current ID (A) REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Page 4 of 6 RJK1021DPN Reverse Drain Current vs. Source to Drain Voltage 100 Avalanche Current vs.Case Temperature 40 L = 100 µH IDR (A) 80 10 V 5V 40 VGS = 0 V, -5 V 20 Avalanche Current IAP (A) Pulse Test 30 Reverse Drain Current 60 20 10 0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 175 200 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10.0 3 1 D=1 0.5 0.3 0.2 0.1 5 0.0 0.02 0.0 1 u tp lse 0.1 θch – c(t) = γs (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C PDM PW T D= PW T 0.03 1s ho 0.01 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 25 Ω Vin 10 V VDD = 50 V td(on) Vout Monitor Vin Vout 10% 10% Waveform 90% 10% 90% td(off) tf 90% tr REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Page 5 of 6 RJK1021DPN Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 +0.2 –0.1 +0.1 –0.08 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part No. RJK1021DPN-00-00 Quantity 500 pcs Box (Sack) Shipping Container REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: (21) 5877-1818, Fax: (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: (2) 796-3115, Fax: (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2008. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.2