RJK1529DPK-E

Preliminary Datasheet RJK1529DPK Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance  Low leakage current  High speed switching REJ03G0510-0300 Rev.3.00 Jun 30, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 ch-c Tch Tstg Note1 Ratings 150 ±30 70 210 70 210 35 91.8 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G0510-0300 Rev.3.00 Jun 30, 2010 Page 1 of 6 RJK1529DPK Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 150 — — 3.0 25 — — — — — — — — — — — — — — Typ — — — — 43 0.022 2900 600 78 40 270 110 170 74 19 35 0.95 140 0.6 Max — 1 ±0.1 4.5 — 0.025 — — — — — — — — — — 1.50 — — Unit V A A V S  pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 35 A, VDS = 10 V Note4 ID = 35 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 35 A VGS = 10 V RL = 2.14  Rg = 10  VDD = 120 V VGS = 10 V ID = 70 A IF = 70 A, VGS = 0 Note4 IF = 70 A, VGS = 0 diF/dt = 100 A/s REJ03G0510-0300 Rev.3.00 Jun 30, 2010 Page 2 of 6 RJK1529DPK Preliminary Main Characteristics Power vs. Temperature Derating 200 Maximum Safe Operation Area 1000 300 150 10 Pch (W) ID (A) 100 30 10 μ PW 10 0μ s (1 = 1 s sh ot) ms Operation in this Channel Dissipation Drain Current 100 3 area is limited by 1 RDS(on) 0.3 0.1 0.03 0.01 Ta = 25°C 1 100 300 1000 30 3 10 Drain to Source Voltage VDS (V) 50 0 50 100 150 Tc (°C) 200 Case Temperature Typical Output Characteristics 100 10 V 8V 7V Pulse Test 200 Typical Transfer Characteristics VDS = 10 V Pulse Test 160 80 ID (A) 60 6V Drain Current 40 Drain Current 5V ID (A) 120 80 Tc = 75°C 40 −25°C 25°C 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) 20 VGS = 4 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 4 Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) (Ω) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1 VGS = 10 V 0.5 3 0.2 0.1 0.05 2 ID = 70 A 1 35 A 10 A 0.02 0.01 1 3 10 30 Drain Current Pulse Test 100 300 ID (A) 1000 0 4 8 12 16 VGS (V) 20 Gate to Source Voltage REJ03G0510-0300 Rev.3.00 Jun 30, 2010 Page 3 of 6 RJK1529DPK Static Drain to Source on State Resistance vs. Temperature 0.1 VGS = 10 V Pulse Test 0.08 Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) 100 30 10 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 ID (A) 30 100 75°C 25°C Tc = −25°C 0.06 35 A 0.04 ID = 70 A 20 A 10 A 0.02 0 −25 3A 0 25 50 75 100 125 Tc (°C) 150 Case Temperature Drain Current Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 100000 30000 Capacitance C (pF) 500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 Reverse Drain Current IDR (A) Dynamic Input Characteristics 240 16 VGS (V) VGS = 0 f = 1 MHz 10000 3000 1000 300 100 Crss 30 10 0 50 100 VDS (V) 150 Drain to Source Voltage Coss Ciss di / dt = 100 A / μs VGS = 0, Ta = 25°C 10000 Switching Characteristics VGS = 10 V, VDD = 75 V PW = 5 μs, duty < 1 % RG = 10 Ω VDS (V) ID = 70 A 180 VDS VDD = 30 V 60 V 120 V VGS 12 Switching Time t (ns) Drain to Source Voltage Gate to Source Voltage 1000 tf tr td(off) 120 8 tf 100 td(on) tr 10 0.1 60 VDD = 120 V 60 V 30 V 20 40 60 80 4 0 0 100 0.3 Gate Charge Qg (nC) 1 3 Drain Current 10 30 ID (A) 100 REJ03G0510-0300 Rev.3.00 Jun 30, 2010 Page 4 of 6 RJK1529DPK Reverse Drain Current vs. Source to Drain Voltage 100 5 VDS = 10 V Gate to Source Cutoff Voltage vs. Case Temperature Preliminary IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) 80 4 ID = 10 mA 1 mA Reverse Drain Current 60 3 40 10 V 5V VGS = 0, -5 V 2 0.1 mA 20 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage 1 0 -25 0 25 50 75 100 125 150 Tc (°C) Case Temperature Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C PDM D= PW T 0.03 0.02 1 0.0 1s PW T h p ot uls e 0.01 10 μ 100 μ 1m 10 m 100 m Pulse Width PW (s) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V V DD = 75 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr REJ03G0510-0300 Rev.3.00 Jun 30, 2010 Page 5 of 6 RJK1529DPK Preliminary Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 1.5 15.6 ± 0.3 4.8 ± 0.2 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name RJK1529DPK-E Note: Quantity 30 pcs Plastic magazine Shipping Container For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0510-0300 Rev.3.00 Jun 30, 2010 0.3 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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