RJL5014DPP-A0#T2

Datasheet RJL5014DPP-A0 R07DS1436EJ0100 Rev.1.00 Mar.23.2021 500V - 19A - MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID Notes4 ID (pulse)Notes1 IDR IDR (pulse) Notes1 IAP Notes3 EAR Notes3 Pch Notes2 Tch Tstg Ratings 500 30 19 57 19 57 4 0.88 35 150 –55 to +150 Unit V V A A A A A mJ W C C Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data . Notes: 1. 2. 3. 4. PW  10 s, duty cycle  1 % Value at Tc = 25 C STch = 25 C, Tch  150 C Limited by maximum safe operation area R07DS1436EJ0100 Rev.1.00 Mar.23.2021 Page 1 of 6 RJL5014DPP-A0 Thermal Resistance Characteristics (Ta = 25 C) Item Channel to case thermal impedance Symbol ch-c Max. Value 3.57 Notes5 Unit CW Notes: 5. Designed target value on Renesas measurement condition. (Not tested) Electrical Characteristics (Ta = 25 C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 500 — — 2.0 — Typ — — — — 0.32 Max — 10 0.1 4.0 0.40 Unit V A A V  Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr — — — — — — — — — — — — 1700 190 23 32 27 95 20 43 8.2 21.8 1.00 160 — — — — — — — — — — 1.65 — pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9.5 A, VGS = 10 V Notes6 VDS = 25 V VGS = 0 f = 1 MHz ID = 9.5 A VGS = 10 V RL = 26.3  Rg = 10  VDD = 400 V VGS = 10 V ID = 19 A IF = 19 A, VGS = 0 Notes6 IF = 19 A, VGS = 0 diF/dt = 100 A/s Notes: 6. Pulse test R07DS1436EJ0100 Rev.1.00 Mar.23.2021 Page 2 of 6 RJL5014DPP-A0 Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 10 10 20 Drain Current ID (A) = 10 0 s 1 Operation in this area is limited by RDS(on) 0.1 6V 8V s PW Drain Current ID (A) 100 0.01 Tc = 25C 5.6 V 5.8 V 1 10 100 12 5.0 V 8 4.8 V 4 4.6 V VGS = 4.4 V 12 16 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) () 10 Tc = 75C 25C 1 25C 0 2 4 6 8 10 Pulse Test VGS = 10 V 1 0.1 10 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature Body-Drain Diode Reverse Recovery Time 1.0 0.8 20 Typical Transfer Characteristics ID = 19 A 0.6 9.5 A 0.4 3A 0.2 0 -25 0 25 100 1000 Pulse Test VGS = 10 V 50 75 100 125 150 Case Temperature Tc (C) Reverse Recovery Time trr (ns) Drain Current ID (A) 8 Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test Static Drain to Source on State Resistance RDS(on) () 4 Drain to Source Voltage VDS (V) 100 0.1 0 1000 5.2 V Pulse Test 1 shot Notes7 0.001 0.1 5.4 V 10 V 16 100 di / dt = 100 A / s VGS = 0, Ta = 25C 10 1 10 100 Reverse Drain Current IDR (A) Notes: 7. Designed target value on Renesas measurement condition. (Not tested) Renesas recommends that operating conditions are designed according to a document “Power MOS FET・ IGBT Attention of Handling Semiconductor Devices”. R07DS1436EJ0100 Rev.1.00 Mar.23.2021 Page 3 of 6 RJL5014DPP-A0 Typical Capacitance vs. Drain to Source Voltage Coss 100 Crss 10 1 0 VGS = 0 f = 1 MHz 50 100 150 250 VDS 200 4 VDD = 400 V 250 V 100 V 0 20 0 40 60 80 Reverse Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature Pulse Test VGS = 0, -5 V 10 V 12 5V 8 4 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS1436EJ0100 Rev.1.00 Mar.23.2021 12 8 Gate Charge Qg (nC) 16 0 VDD = 100 V 250 V 400 V 600 400 16 VGS ID = 19 A Drain to Source Voltage VDS (V) 20 Reverse Drain Current IDR (A) 200 Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) Ciss 1000 800 5 Gate to Source Voltage VGS (V) 10000 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 VDS = 10 V 4 ID = 10 mA 1 mA 3 0.1 mA 2 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (C) Page 4 of 6 RJL5014DPP-A0 Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25C Notes8 1 D=1 0.5 0.2 0.1 0.1 0.05  ch – c(t) =  s (t) •  ch – c  ch – c = 3.57C/W, Tc = 25C 0.02 0.01 0.01 1s t ho 0.001 10  pu lse PDM D= PW T PW T 100  1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10  Vin 10 V VDD = 250 V Vin Vout 10% 10% 10% 90% td(on) tr 90% td(off) tf Notes: 8. Designed target value on Renesas measurement condition. (Not tested) R07DS1436EJ0100 Rev.1.00 Mar.23.2021 Page 5 of 6 RJL5014DPP-A0 Package Dimensions Package Name JEITA Package Code RENESAS Code Previous Code MASS (Typ) [g] TO-220FPA — PRSS0003AP-A TO-220FPA 1.65 10.0±0.3 2.7±0.2 15.0±0.3 6.9±0.3 3.0±0.3 Unit: mm 1.95±0.3 3.2±0.2 3.2±0.2 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 −0.11 2.54±0.25 4.5±0.2 2.54±0.25 © 2017 Renesas Electronics Corporation. All rights reserved. Ordering Information Orderable Part No. RJL5014DPP-A0#T2 R07DS1436EJ0100 Rev.1.00 Mar.23.2021 Quantity 2500 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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