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RKZ6.2Z4MFAKT

RKZ6.2Z4MFAKT

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    RKZ6.2Z4MFAKT - Silicon Planar Zener Diode for Surge Absorption - Renesas Technology Corp

  • 数据手册
  • 价格&库存
RKZ6.2Z4MFAKT 数据手册
RKZ6.2Z4MFAKT Silicon Planar Zener Diode for Surge Absorption REJ03G1349-0100 Rev.1.00 Feb 21, 2006 Features • RKZ6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line. • VSON-5 Package is suitable for high density surface mounting. Ordering Information Type No. RKZ6.2Z4MFAKT Laser Mark N4 Package Name VSON-5 Package Code PUSN0005KB-A Pin Arrangement 1 2 1 2 (Month code) N4 ∗ 5 4 3 (Top View) 5 4 3 (Top View) 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode Month Code Month of Manufacture January February March April May June Assemble JAPAN MALAYSIA A 1 B 2 C 3 D 4 E 5 F 6 Month of Manufacture July August September October November December Assemble JAPAN MALAYSIA G 7 H 8 J 9 K W L X M Y Rev.1.00 Feb 21, 2006 page 1 of 4 RKZ6.2Z4MFAKT Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note: Four device total, See Fig.2. Symbol Pd * Tj Tstg Value 150 150 −55 to +150 Unit mW °C °C Electrical Characteristics *1 (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2, *3 Symbol VZ IR C rd — Min 5.90 — — — 8 Typ — — 4.0 — — Max 6.50 3 4.5 60 — Unit V µA pF Ω kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5 V. 3. Between cathode and anode. Rev.1.00 Feb 21, 2006 page 2 of 4 RKZ6.2Z4MFAKT Main Characteristics 10-2 10 -3 0.3 250 20h × 15w × 0.8t Unit: mm Power Dissipation Pd (mW) Zener Current IZ (A) 2.45 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 0 6 2 4 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 8 1.0 1.75 1.5 150 With polyimide board 100 50 0 0 50 100 150 Ambient Temperature Ta (°C) 3.0 3.8 200 200 Fig.2 Power Dissipation vs. Ambient Temperature Nonrepetitive Surge Reverses Power PRSM (W) 104 PRSM t 103 Ta = 25°C nonrepetitive 102 10 1.0 10–2 10–1 1.0 Time t (ms) 10 102 103 Fig.3 Surge Reverse Power Ratings Rev.1.00 Feb 21, 2006 page 3 of 4 RKZ6.2Z4MFAKT Package Dimensions Package Name VSON-5 JEITA Package Code  RENESAS Code PUSN0005KB-A MASS[Typ.] Previous Code 0.002g VSON-5 / VSON-5V D c HE E L b2 e b Reference Symbol e1 A l1 A b c D E e HE L b2 e1 l1 Dimension in Millimeters Min Nom Max 0.50 0.55 0.60 0.3 0.15 0.2 0.07 1.55 1.1 1.55 0.12 1.6 1.2 0.5 1.6 0.2 0.3 1.35 0.45 0.22 1.65 1.3 1.65 e e Pattern of terminal position areas Rev.1.00 Feb 21, 2006 page 4 of 4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: (21) 5877-1818, Fax: (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: (2) 796-3115, Fax: (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0
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