5163

RF5163 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Package: QFN, 16-Pin, 4x4        802.11b/g/n Access Points PCS Communication Systems 2.4GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Broadband Spread-Spectrum Systems VCC1 VCC1 GND 13 RF IN 1 12 RF OUT VREG1GND 2 11 RF OUT P DOWN 3 10 RF OUT Bias P DETECT 4 Applications  14 9 GND 5 6 7 8 NC  15 VREG2 GND  16 VREG2  Single 3.3V or 5V Power Supply +33dBm Saturated Output Power (typ.) 20dB Large Signal Gain (typ.) 2.0% EVM @ +26dBm, 54Mbps (typ.) Separate Power Detect/Power Down Pins 1800MHz to 2500MHz Frequency Range VREG1  VCC Features Functional Block Diagram Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 4mmx4mm, 16-pin, leadless chip carrier with a backside ground. The RF5163 is designed to maintain linearity over a wide range of supply voltage and power output. Ordering Information RF5163 RF5163PCK-410 GaAs HBT GaAs MESFET InGaP HBT Standard 25 piece bag Fully assembled evaluation board tuned for 2.4GHz to 2.5GHz and 5 loose sample pieces Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 14 RF5163 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +5.5 VDC Power Control Voltage (VPC) -0.5 to 3.3 V DC Supply Current 1000 mA Input RF Power +15 dBm Operating Ambient Temperature -30 to +85 °C Reduced Performance Temperature -40 to -30 °C -40 to +150 °C Storage Temperature Moisture sensitivity Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. JEDEC Level 3 Parameter Min. Specification Typ. Max. Unit Condition T=25 °C, VCC =5.0V, VREG1,2 =3V, Freq=2450MHz Overall Frequency Range 2400 to 2500 MHz Output Power +26 dBm EVM 2.0 % Gain 20 dB @ +6dBm RF Pin  Please see Theory of Operation. Compliance IEEE802.11g and IEEE802.11b Input Impedance Output VSWR 10:1 With 802.11g modulation (54 Mbit/s) and meeting 802.11g spectral mask @