CGR0218ZSQ

CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier CGR-0218Z PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGR-0218Z contains two amplifiers for use in wideband push-pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push-pull configuration. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Features      Amplifier Configuration   5V Single Supply Excellent Linearity Two Amplifiers in Each SOIC-8 Package Simplify Push-Pull PC Board Layout SOIC-8 Package Available in Lead-Free, RoHS Compliant Packaging CATV Head Ends CATV Line Drivers DOCSIS Cable Modems Applications 1 2 3 4 8 7 6 5   Parameter Small Signal Gain Gain Flatness OIP3 Min. Specification Typ. 17.3 ±0.2 42 Max. Unit dB dB dBm Condition 5MHz to 210MHz 5MHz to 210MHz 5MHz to 210MHz, Tone Spacing=1MHz, POUT per tone=+6dBm 5MHz to 210MHz 5MHz to 210MHz 5MHz to 210MHz 5MHz to 210MHz 7 Ch, Flat Tilt, +50dBmV 7 Ch, Flat Tilt, +50dBmV 7 Ch, Flat Tilt, +50dBmV 5V VCC Junction to case slug P1dB 23 dBm Input Return Loss 22 dB Output Return Loss 22 dB Noise Figure, Balun Insertion Loss 4.0 dB Included CSO 80 dBc CTB 67 dBc XMOD 66 dBc Device Operating Voltage 5.0 V Device Operating Current 217 mA Thermal Resistance (Junction to 30 °C/W Lead) Test Conditions: VCC =5V, ID =217mA Typ., TL =25°C, ZS =ZL =75 , Push Pull Application Circuit RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS091015 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 CGR-0218Z Absolute Maximum Ratings Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Max Junction Temp (TJ) Operating Temp Range (TL) Max Storage Temp Min Storage Temp Rating 300 6.0 18 150 -40 to +85 150 -40 Unit mA V dBm °C °C °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD