NLB-310_06

NLB-310 0 RoHS Compliant & Pb-Free Product Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Linear and Saturated Amplifiers Product Description The NLB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NLB-310 provides flexibility and stability. The NLB-310 is packaged in a low-cost, surface-mount plastic package, providing ease of assembly for high-volume tape-and-reel requirements. Symbol CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) B MILLIMETERS Min. Nom. Max. Min. INCHES Nom. Max. D 4M A C N5 1 2 3 4 5 A B C D E F G H J K L M N 0.535 REF. 2.39 2.54 2.69 0.436 0.510 0.586 2.19 2.34 2.49 1.91 2.16 2.41 1.32 1.52 1.72 0.10 0.15 0.20 0.535 0.660 0.785 0.05 0.10 0.15 0.65 0.75 0.85 0.85 0.95 1.05 4.53 4.68 4.83 4.73 4.88 5.03 0.021 REF. 0.094 0.100 0.106 0.017 0.020 0.023 0.086 0.092 0.098 0.075 0.085 0.095 0.052 0.060 0.068 0.004 0.006 0.008 0.021 0.026 0.031 0.002 0.004 0.006 0.025 0.029 0.033 0.033 0.037 0.041 0.178 0.184 0.190 0.186 0.192 0.198 E 6 0.08 S Seating Plane NOTE: All dimensions are in millimeters, and the dimensions in inches are for reference only. F 1J G 2 H Gauge Plane S 0.1 L3 Kx3 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: Micro-X, 4-Pin, Plastic Features • Reliable, Low-Cost HBT Design • 12.7dB Gain, +12.6dBm P1dB@2GHz • High P1dB of +14.9dBm@6.0GHz and GND 4 MARKING - N6 +13.1dBm@10.0GHz • Single Power Supply Operation • 50 Ω I/O Matched for High Freq. Use RF IN 1 3 RF OUT Ordering Information 2 GND Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-310-T1 Tape & Reel, 1000 Pieces NLB-310-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com NLB-310 Functional Block Diagram Rev A8 060412 4-139 NLB-310 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Rating +20 300 70 200 -45 to +85 -65 to +150 Unit dBm mW mA °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Overall Small Signal Power Gain, S21 Specification Min. Typ. Max. 12.0 12.7 10.7 10.0 9.7 9.6 ±0.3 1.6:1 1.75:1 1.6:1 1.5:1 1.8:1 1.6:1 12.6 14.9 13.1 5.0 +28.9 +27.9 -17 4.6 -0.0015 Unit dB dB dB dB dB dB Condition VD =+4.6V, ICC =50mA, Z0 =50 Ω, TA =+25°C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz f=10.0GHz to 12.0GHz f=5.0GHz to 10.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 11.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 11.0GHz f=2.0GHz f=6.0GHz f=10.0GHz f=3.0GHz f=2.0GHz f=6.0GHz f=0.1GHz to 20.0GHz 8.5 Gain Flatness, GF Input VSWR Output VSWR Output Power @ -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, δGT/δT dBm dBm dBm dB dBm dB V dB/°C 4.4 4.8 MTTF versus Temperature @ ICC =50mA Case Temperature Junction Temperature MTTF 85 125 >1,000,000 174 °C °C hours °C/W Thermal Resistance θJC J T – T CASE -------------------------- = θ JC ( ° C ⁄ Watt ) V D ⋅ I CC 4-140 Rev A8 060412 NLB-310 Pin 1 Function RF IN Description RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: Interface Schematic 2 3 GND RF OUT RF OUT ( V CC – V DEVICE ) R = -----------------------------------------I CC Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 2. RF IN 4 GND Rev A8 060412 4-141 NLB-310 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VCC RCC 4 In 1 C block 2 3 L choke (optional) Out C block VDEVICE Recommended Bias Resistor Values Supply Voltage, VCC (V) Bias Resistor, RCC (Ω) 8 60 10 100 12 140 15 200 20 300 4-142 Rev A8 060412 NLB-310 Extended Frequency InGaP Amplifier Designer’s Tool Kit NBB-X-K1 This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. • • • • 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation Rev A8 060412 4-143 NLB-310 Tape and Reel Dimensions All Dimensions in Millimeters T A B D O S F 14.732 mm (7") REEL ITEMS Diameter FLANGE Thickness Space Between Flange Outer Diameter Spindle Hole Diameter Key Slit Width Key Slit Diameter Plastic, Micro-X SYMBOL SIZE (mm) B 178 +0.25/-4.0 T F O S A D 18.4 MAX 12.8 +2.0 SIZE (inches) 7.0 +0.079/-0.158 0.724 MAX 0.50 +0.08 HUB 76.2 REF 3.0 REF 13.716 +0.5/-0.2 0.540 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN LEAD 1 N3 N3 All dimensions in mm User Direction of Feed N3 N3 4.0 2.00 ± 0.05 SEE NOTE 6 SEE NOTE 1 0.30 ± 0.05 R0.3 MAX. 5.0 +0.1 -0.0 A 1.75 5.0 MIN. B1 Bo 5.50 ± 0.05 SEE NOTE 6 12.0 ± 0.3 Ko SECTION A-A 3.0 Ao A1 8.0 A R0.3 TYP. NOTES: 1. 10 sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C. 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. Ao = 7.0 MM A1 = 1.8 MM Bo = 7.0 MM B1 = 1.3 MM Ko = 2.1 MM 4-144 Rev A8 060412 NLB-310 S11 versus Frequency, Over Temperature 0.0 14.0 13.0 -5.0 12.0 11.0 10.0 -10.0 9.0 S21 versus Frequency, Over Temperature S11 (dB) S21 (dB) 8.0 7.0 6.0 5.0 4.0 3.0 S21, +25°C 2.0 1.0 0.0 S21, -40°C S21, +85°C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 -15.0 -20.0 -25.0 S11, +25°C S11, -40°C S11, +85°C -30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Frequency (GHz) Frequency (GHz) S12 versus Frequency, Over Temperature 0.0 S12, +25°C -2.0 -4.0 -10.0 -6.0 -8.0 -15.0 S12, -40°C S12, +85°C -5.0 0.0 S22 versus Frequency, Over Temperature S12 (dB) S22 (dB) -10.0 -12.0 -14.0 -20.0 -25.0 -30.0 -16.0 -18.0 -20.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 -35.0 S22, +25°C S22, -40°C S22, +85°C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 -40.0 Frequency (GHz) Frequency (GHz) Output P1dB versus Frequency Across Temperature 16.0 8.0 Noise Figure versus Frequency at +25°C 14.0 7.0 12.0 6.0 Output P1dB (dBm) 10.0 Noise Figure (dB) 25°C 40°C 85°C 0.0 2.0 4.0 6.0 8.0 10.0 12.0 5.0 8.0 4.0 6.0 3.0 4.0 2.0 2.0 1.0 0.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) Frequency (GHz) Rev A8 060412 4-145 NLB-310 Note: The s-parameter gain results shown include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1 GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB 4-146 Rev A8 060412