RF2451

RF2451 4 Typical Applications • GSM Handsets • CDMA Handsets • TDMA Handsets • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers 3V LOW NOISE AMPLIFIER D RE F2 S 37 IG 1 N S Product Description 4 .006 .002 The RF2451 is a general purpose, low-cost, high performance low noise amplifier designed for operation from a 2.7V to 4V supply with low current consumption. The attenuation of the device is controlled when in power down mode, providing a known gain step. The RF2451 is available in a small industry-standard MSOP-8 surface mount package, enabling compact designs which conserve board space. The design features accurate PTAT (Proportional To Absolute Temperature) biasing scheme using band gap cells. .196 .190 1 .016 .010 .120 .116 .026 .120 .116 .036 .032 10°MAX 0°MIN .027 .017 .009 .005 Optimum Technology Matching® Applied N P ro E du W ct Package Style: MSOP-8 !Si Bi-CMOS Si BJT GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • 700MHz to 2000MHz Operation • 2.7V to 3.6V Single Supply • +5dBm Input IP3 at 3.0mA • 12dB Gain at 1950MHz • 1.8dB Noise Figure at 1950MHz • 17dB Gain Step FO ad R e RF OUT 1 ISET 2 VCC 3 N S ee O T U pg r Bias Circuits 5 IPSET ENABLE 4 d 8 RF IN 7 GND1 6 GND2 Ordering Information RF2451 RF2451 PCBA 3V Low Noise Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A8 000822 4-247 GENERAL PURPOSE AMPLIFIERS RF2451 Absolute Maximum Ratings Parameter Supply Voltage Supply Current Operating Ambient Temperature Storage Temperature Rating 4.0 20 -40 to +85 -40 to +150 Unit V mA °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Min. Specification Typ. Max. Unit Condition T=27°C, VCC =2.7V, VIPSET =0V, VENABLE =2.7V Freq=1.95GHz 4 GENERAL PURPOSE AMPLIFIERS Overall Frequency Range 700 to 2000 10.5 +4.5 12.5 1.6 +8 5:1 -5.0 17 1.6 0 -8 CMOS Low CMOS High LNA Performance Gain Noise Figure Input IP3 Input VSWR Output VSWR Off Mode Gain Gain Noise Figure Input IP3 Off Mode Gain Power Control Power “ON” Voltage Power “OFF” Voltage Current into ENABLE CMOS High CMOS Low uc t 1 5 1 Internal current setting “ON” External current setting “ON” Current into ISELECT N P ro EW d 2.7 to 3.6 2.9 Current Control N S ee O T U 4-248 pg r d Operating Voltage Operating Current Leakage Current FO ad R e Power Supply D RE F2 S 37 IG 1 N S MHz 1.5:1 dB dB dBm dB dB dB dB dB dBm dB V V µA V V µA V mA µA At 2.9mA (Noise match) VENABLE =0V Freq=836MHz VENABLE =0V 1 Voltage on IPSET Voltage on IPSET VISELECT =2.7V Voltage on ENABLE Voltage on ENABLE VENABLE =2.7V VCC =2.7V, Internal current setting VENABLE =0V Rev A8 000822 RF2451 Pin 1 2 3 4 5 Function RF OUT ISET VCC ENABLE IPSET Description RF output pin. Bias for the LNA is provided through this pin, hence it should be connected to VCC through an inductor. This pin sets the current for the device. A resistor to ground of 1kΩ provides a current of 17.5mA. The condition for optimal IP3 is to use the internal current setting option and leave this pin open (no connect). Power supply for the bias circuits. Power down control. This is a CMOS input. When this pin is CMOS “high” the device is enabled. When the level is CMOS “low” the device is shut off and a controlled attenuator is turned on. This pin selects the internal current setting when CMOS level “low”, and the external current setting when this pin is CMOS level “high”. The current is set to 2.8mA using the internal current setting, and can be up to 20mA using the external current setting. Ground connection for the bias circuits. Ground connection for the LNA. Keep traces physically short and connect immediately to ground plane for best performance. RF input pin. This pin is not internally DC blocked and requires an external blocking capacitor. Interface Schematic D RE F2 S 37 IG 1 N S 8 RF IN N S ee O T U Rev A8 000822 pg r FO ad R e d N P ro EW d uc t 4-249 GENERAL PURPOSE AMPLIFIERS 6 7 GND2 GND1 4 RF2451 Application Schematic 1.95GHz VCC 1.5 pF RF OUT 1 kΩ 3.3 nH 1 2 8 7 6 5 22 nF RF IN 10 nF 4 GENERAL PURPOSE AMPLIFIERS ENABLE 3 4 Application Schematic 836MHz VCC 1 pF RF OUT 1 kΩ VCC N P ro EW d 18 nH 1 2 3 4 uc t N S ee O T U 4-250 pg r FO ad R e ENABLE d D RE F2 S 37 IG 1 N S Bias Circuits 22 nF 8 7 6 5 82 nH Bias Circuits VCC IPSET RF IN IPSET Rev A8 000822 RF2451 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC J1 LNA OUTPUT C2 1.5 pF L1 3.3 nH 1 2 8 7 6 5 C1 22 nF L2 10 nH J2 LNA INPUT D RE F2 S 37 IG 1 N S VCC R1 1 kΩ 3 4 4 IPSET Bias Circuits ENABLE 2451400A IPSET ENABLE VCC P1 1 2 3 VCC ENABLE IPSET GND ENVCC 2.6 V + - C3 1 nF C4 1 uF + C5 22 nF VCC + 2.7 V - 4 CON4 N S ee O T U Rev A8 000822 pg r FO ad R e d N P ro EW d uc t 4-251 GENERAL PURPOSE AMPLIFIERS RF2451 Evaluation Board Layout Board Size 1” x 1” Board Thickness 0.031”, Board Material FR-4 4 GENERAL PURPOSE AMPLIFIERS N S ee O T U 4-252 pg r FO ad R e d N P ro EW d uc t D RE F2 S 37 IG 1 N S Rev A8 000822