RF2488

Preliminary RF2488 MULTI-MODE DUAL-BAND LNA MIXER 8 Typical Applications • TDMA/EDGE Handsets • TDMA IS-136 Handsets • GAIT Handsets • TDMA/GSM Dual-Band Handsets • GSM/DCS/EDGE Handsets Product Description The RF2488 is a dual-band LNA/Mixer designed to support dual-band, multi-mode handset applications. The unique dual IF outputs provide interface to two independent IF SAW filters supporting applications that combine IS136 with GSM, DCS or EDGE air interfaces. The device includes four mixers, providing the ability to use two independent IF bandwidths accessible from either the low or high band LNAs. Each LNA has a gain bypass mode controlled by the GAIN SEL pin. An image reject filter is required between each LNA and its mixer. Power management is implemented based on a three-pin logic level interface. Power consumption is minimized by shutting down all but the active sections of the device. .80 .65 1.00 0.85 4.00 sq. .60 typ .24 .45 .20 4 PLCS 2.25 sq. 1.95 12° max .05 .01 .55 .30 2 .40 .28 .50 .23 .13 4 PLCS Optimum Technology Matching® Applied Si BJT Si Bi-CMOS Package Style: LCC, 24-Pin, 4x4 üSiGe HBT VCC BIAS Low LNA OUT Low LNA VCC 24 23 22 GaAs HBT GaAs MESFET Si CMOS Features • Complete Dual-Band Front-End • Switchable LNA Gain • Low Noise and High Intercept Point • Low Current Consumption • Single 2.7V to 3.3V Power Supply • Supports Dual IF Bandwidths Low MIX IN TX/RX 21 20 Low LNA GND GAIN SEL Low LNA IN High LNA IN High LNA GND High LNA VCC 1 2 3 4 5 6 7 High LNA OUT 8 GND 9 IF OUT SEL 10 High MIX IN 11 NC 12 Low LO IN 19 18 BAND SEL 17 IF1+ 16 IF115 MXR VCC 14 IF2+ 13 IF2- Ordering Information RF2488 RF2488 PCBA Multi-Mode Dual-Band LNA Mixer Fully Assembled Evaluation Board Functional Block Diagram High LO IN RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 010905 8-123 FRONT-ENDS NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal: to be measured between 0.02 mm and 0.25 mm from terminal end. 3 Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional. 4 Package Warpage: 0.05 mm max. 5 Die Thickness Allowable: 0.305 mm max. 8 RF2488 Absolute Maximum Ratings Parameter Supply Voltage Input LO and RF Levels Operating Ambient Temperature Storage Temperature Preliminary Rating -0.5 to +3.6 10 -40 to +85 -40 to +125 Unit V dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Operating Range Supply Voltage Supply Current RF Frequency Range LO Frequency Range IF Frequency Range Temperature Range Specification Min. Typ. Max. 2.7 800 1800 885 1885 85 -40 3 22 3.3 24 1000 2000 1400 2400 400 +85 Unit V mA MHz MHz MHz MHz MHz °C Condition @ 3V in any mode. T=25°C Low Band High Band Low Band High Band Low Noise Amplifier Low Band Gain TAMB =25°C, VCC =3V Frequency=869MHz to 894MHz 17 -11 18 -9 19 -8 ±0.75 1.35 12 dB dB dB dB dB dBm dBm dB dB dB dB 4 0.3 5 0.5 mA mA High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low -40°C to +85°C High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low LNA Input-External Match, GAIN SEL=High LNA Input-External Match, GAIN SEL=Low LNA Output-External Match, GAIN SEL=High LNA Output-External Match, GAIN SEL=Low High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low TAMB =25°C, VCC =3V, IF=135MHz; Mixer RF Input Frequency=869MHz to 894MHz; LO Input Frequency=1004MHz to 1029MHz 8 FRONT-ENDS Gain Variations versus Temperature Noise Figure Input 3rd Order Intercept Return Loss 0 22 10 10 10 10 Supply Current 1.25 10 3 25 Mixer Low Band Conversion Gain LO Input Level Noise Figure (SSB) Input 3rd Order Intercept Return Loss Terminating Impedance, IF Output Mixer Supply Current 9 -9 6 10 10 10 -6 10 7 11 0 12 dB dBm dB dBm dB dB Ω mA 500 12 13 Mixer RF Input LO Input Mixer “ON” 8-124 Rev A0 010905 Preliminary Parameter Low Band Cascaded Electrical Specification Gain Gain Variations versus Temperature Noise Figure Input 3rd Order Intercept Return Loss -10 16 10 10 10 10 50 35 40 24 -4 26 -2 28 0 +1.0 2.5 24 dB dB dB dB dB dBm dBm dB dB dB dB dB dB dB dB dB Ω mA mA RF2488 Specification Min. Typ. Max. Unit Condition TAMB =25°C, VCC =3V, IF=135MHz. Assumes 3dB loss for image filter. High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low 2.1 22 -8 18 Isolation IF Output Impedance Supply Current 45 >50 >40 500 16 13 18 15 Low Noise Amplifier High Band Gain Gain Variations versus Temperature Noise Figure Input 3rd Order Intercept Return Loss 0 16 10 10 10 10 Supply Current 6 0.3 7 0.5 16 -8 17 -6 18 -4 +1.0 1.7 11 dB dB dB dB dB dBm dBm dB dB dB dB mA mA High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low LNA Input-External Match, GAIN SEL=High LNA Input-External Match, GAIN SEL=Low Mixer RF Input Mixer LO Input LO IN to LNA IN, GAIN SEL=High LO IN to LNA IN, GAIN SEL=Low LNA Out to Mixer RF In LO In to IF Out Mixer RF In to IF Out Mixer “ON” High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low TAMB =25°C, VCC =3V Frequency=1930MHz to 1990MHz High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low -40°C to 85°C High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low LNA Input-External Match, GAIN SEL=High LNA Input-External Match, GAIN SEL=Low LNA Output-External Match, GAIN SEL=High LNA Output-External Match, GAIN SEL=Low High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low TAMB =25°C, VCC =3V, IF=135MHz; Mixer RF Input Frequency =1930MHz to 1990MHz; LO Output Frequency=2065MHz to 2125MHz 8 FRONT-ENDS 1.6 8 2 18 Mixer High Band Conversion Gain LO Input Level Noise Figure (SSB) Input 3rd Order Intercept Return Loss, Mixer RF Input LO Input Terminating Impedance IF Output Mixer Supply Current 10 -9 5 10 10 11 -6 10 7 12 0 12 dB dBm dB dBm dB dB Ω mA 500 16 17 Mixer “ON” Rev A0 010905 8-125 RF2488 Parameter High Band Cascaded Electrical Specification Gain Gain Variations versus Temperature Noise Figure Input 3rd Order Intercept Return Loss -10 16 10 10 10 10 50 50 40 22 -2 24 0 26 2 +1.5 3.0 25 dB dB dB dB dB dBm dBm dB dB dB dB dB dB dB dB dB dBc Ω mA mA V V µA kΩ Preliminary Specification Min. Typ. Max. Unit Condition TAMB =25°C, VCC =3V, IF=135MHz. Assumes 3dB loss for image filter. High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low 2.6 20 -8 18 Isolation Half IF Spur IF Output Impedance Supply Current 8 FRONT-ENDS 45 >50 >60 -68 500 22 18 High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low LNA Input-External Match, GAIN SEL=High LNA Input-External Match, GAIN SEL=Low Mixer RF Input Mixer LO Input LO IN to LNA IN, GAIN SEL=High LO IN to LNA IN, GAIN SEL=Low LNA Out to Mixer RF In LO In to IF Out Mixer RF In to IF Out Mixer “ON” High Gain, GAIN SEL=High Low Gain, GAIN SEL=Low VCC =2.7V to 2.9V VCC =2.7V to 2.9V -60 24 22 0.5 Logic Levels Input Low Input High Input Current Input Impedance 2.0 2 10 20 100 8-126 Rev A0 010905 Preliminary Pin 1 2 3 Function Low LNA GND GAIN SEL Low LNA IN Description Low band LNA ground connection. As an option, an external inductor to ground may be used to reduce LNA gain. CMOS compatible signal controlling both the low band and high band LNA gain. Logic (0)=Low Gain, Logic (1)=High Gain. Low band LNA input. The maximum VSWR is 2:1 (Cell/GSM RX band) for both the gain and bypass mode. This pin is internally DC-biased and should be DC blocked with a capacitor suitable for the frequency of operation. RF2488 Interface Schematic See pin 3. Low LNA OUT Low LNA IN Low LNA GND 4 High LNA IN High band LNA input. The maximum VSWR is 2:1 (DCS/PCS RX band) for both the gain and bypass mode. This pin is internally DC-biased and should be DC blocked with a capacitor suitable for the frequency of operation. High LNA OUT High LNA IN High LNA GND 5 6 7 8 9 10 High MIX IN IF output select state control pin. This CMOS compatible signal controls the selection of the IF mixer output path (see the State Control Truth Table). Local bypass capacitor required. High band RF mixer input. Although the base of the mixer input transistor is AC coupled, this pin serves a dual purpose of providing a DC-bias path via external inductor to GND. The typical input impedance is 8 Ω real and requires external matching to 50 Ω. High MIX IN 11 12 13 NC High LO IN IF2- High band local oscillator input. This pin is internally AC-coupled and matched to 50 Ω. IF output. Open collector output, requires external matching components and DC connection to VCC. See pin 19. IF2+ 1 pF 1 pF IF2- 1 pF 14 15 IF2+ MXR VCC IF output. Open collector output, requires external matching components and DC connection to VCC. Mixer supply voltage. Local bypass capacitor required. See pin 13. Rev A0 010905 8-127 FRONT-ENDS High LNA GND High LNA VCC High LNA OUT GND IF OUT SEL High band LNA ground connection. Immediate grounding required adjacent to pin. High band LNA supply voltage. Local bypass capacitor required. High band LNA Output. Bias for the LNA is provided through this pin, hence it should be connected to VCC through an inductor. Direct connection to ground. See pin 4. See pin 4. 8 RF2488 Pin 16 Function IF1Description IF output. Open collector output, requires external matching components and DC connection to VCC. Preliminary Interface Schematic IF1+ 1 pF 1 pF 1 pF IF1- 17 18 19 IF1+ BAND SEL Low LO IN IF output. Open collector output, requires external matching components and DC connection to VCC. This CMOS compatible pin controls the selection of the low or high band signal path (See the State Control Truth Table). Local bypass capacitor required. LO band local oscillator input. This pin is AC-coupled and matched to 50 Ω. See pin 16. LO IN 500 Ω 8 FRONT-ENDS 20 21 TX/RX Low MIX IN This CMOS compatible TX/RX mode select Power Control Pin. CMOS compatible signal controlling the functional state of the device (See the State Control Truth Table). Local bypass capacitor required. Low band RF mixer input. Although the base of the mixer input transistor is AC coupled, this pin serves a dual purpose of providing a DC bias path via external inductor to GND. The typical input impedance is 8 Ω real and requires external matching to 50 Ω. Bias supply voltage. Local bypass capacitor required. Low band LNA output. Bias for the LNA is provided through this pin, hence it should be connected to VCC through and inductor. Low band LNA RF supply voltage. Local bypass capacitor required. Low MIX IN 22 23 24 VCC BIAS Low LNA OUT Low LNA VCC See pin 3. RF2488 State Control Truth Table State 0 1 2 3 4 5 6 7 TX/RX 0 0 0 0 1 1 1 1 Band Sel 0 0 1 1 0 0 1 1 IF Out Sel 0 1 0 1 0 1 0 1 Active Circuits Low Band LNA, IF1 Mixer Low Band LNA, IF2 Mixer High Band LNA, IF1 Mixer High Band LNA, IF2 Mixer All Off All Off All Off All Off 8-128 Rev A0 010905 Preliminary Detailed Description RF2488 The RF2488 is fabricated on a high performance Silicon Germanium process that allows optimization of key RF parameters (including noise figure, gain and linearity) for very low current consumption. The RF2488 is packaged in a small 24pin, 4mmx4mm, leadless chip carrier. It can be operated on a single supply voltage from 2.7V to 3.3V. To reduce power consumption the RF2488 has a standby mode that draws less than 10uA. The RF2488 has two frequency bands of operation. Each is comprised of an LNA and two downconverting mixers with combined RF inputs, and two separate intermediate frequency outputs. The LNA outputs and mixer RF inputs are typically connected through an image reject SAW filter, which provides image rejection and out-of-band blocking with low inband insertion loss. Either of the two IF outputs can be selected whether operating in low band or high band mode. This feature allows different IF frequencies and SAW filters to be used for different air interfaces in multi-mode phones. The modes are selected using the external BAND SEL and IF SEL pins; these can be switched using standard CMOS logic levels. LNA There are two LNA circuits: one for high band and one for low band. They have two gain conditions: high gain and low gain. The gain state is selected using the external GAIN SEL pin that can be switched with standard CMOS logic levels. The LNAs require a DC-blocking capacitor at the input and an inductor to ground; the inductor is used to provide additional input linearity and can be removed if the linearity is not required. The LNA output requires an output match, which is determined by the input impedance of the IR SAW filter (typically 50 Ω). The match must include an inductor to supply to provide the LNA with a DC path to VCC. In high gain mode, the low band LNA exhibits 18dB of gain combined with a noise figure of