RF2627

RF2627 10 Typical Applications • 3V CDMA Cellular Systems • 3V CDMA PCS Systems • 3V TDMA Cellular/PCS Systems • General Purpose Linear IF Amplifier • Commercial and Consumer Systems • Portable Battery Powered Equipment 3V CDMA RECEIVE AGC AMPLIFIER Product Description The RF2627 is a complete AGC amplifier designed for the receive section of 3V CDMA cellular and PCS applications. It is designed to amplify IF signals while providing more than 90dB of gain control range. Noise Figure, IP3, and other specifications are designed for CDMA handsets. This circuit is designed as part of the RFMD CDMA Chip Set, consisting of a Transmit IF AGC Amp, a Transmit Upconverter, a Receive LNA/Mixer, and this Receive IF AGC Amp. The IC is manufactured on an advanced high frequency Silicon Bipolar process, and is packaged in a standard miniature 8-lead plastic MSOP package. 0.192 + 0.008 0.012 0.006 + 0.003 -A- 0.0256 0.118 + 0.004 sq. 6° MAX 0° MIN 0.034 NOTES: 1. Shaded lead is pin 1. 2. All dimensions are exclusive of flash, protrusions or burrs. 3. Lead coplanarity: 0.002 with respect to datum "A". 0.021 + 0.004 0.006 + 0.002 Optimum Technology Matching® Applied Si Bi-CMOS SiGe HBT Si CMOS • Supports PCS and Cellular Applications • -48dB to +48dB Gain Control Range • Single 3V Power Supply IN+ 1 IN- 2 GND 3 GC 4 GAIN CONTROL 8 VCC1 7 VCC2 6 OUT+ 5 OUT- • -2dBm Input IP3 • 12MHz to 285MHz Operation • Monolithic Construction Ordering Information RF2627 RF2627 PCBA 3V CDMA Receive AGC Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A8 010711 10-33 IF AMPLIERS üSi BJT Package Style: MSOP-8 10 GaAs HBT GaAs MESFET Features RF2627 Absolute Maximum Ratings Parameter Supply Voltage Control Voltage Input RF Power Operating Ambient Temperature Storage Temperature Value -0.5 to +7.0 -0.5 to +5.0 +10 -40 to +85 -40 to +150 Unit VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. Unit Condition T=25°C, 85MHz, VCC =3.0V, ZS =500 Ω, ZL =500 Ω, 500 Ω External Input Terminating Resistor, 500 Ω External Output Terminating Resistor (Effective ZS =333 Ω, Effective ZL =250 Ω) (See Application Example) Overall Frequency Range Maximum Gain Minimum Gain Gain Slope Gain Control Voltage Range Gain Control Input Impedance Noise Figure Input IP3 Stability (Max VSWR) +45 12 to 285 +48 -48 57 0 to 3 30 5 -40 -2 -45 MHz dB dB dB/V VDC kΩ dB dBm dBm VGC =2.4V VGC =0.3V Measured in 0.5V increments Source impedance of 4.7kΩ At maximum gain and 85MHz At +40dB gain, referenced to 500 Ω At minimum gain, referenced to 500 Ω Spurious