SGA4486Z
SGA4486ZDC
to 4500MHz,
Cascadable
SiGe HBT
MMIC Amplifier
DC to 4500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
Features
The SGA4486Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Gain & Return Loss vs. Frequency
VD = 3.2V, ID = 45mA (Typ.)
GaAs HBT
0
Gain (dB)
12
-20
OR
6
GaAs pHEMT
-10
IRL
-30
Return Loss (dB)
18
InGaP HBT
SiGe HBT
GAIN
GaAs MESFET
24
Si BiCMOS
High Gain: 15.9dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
Optimum Technology
Matching® Applied
SiGe BiCMOS
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Si CMOS
0
Si BJT
-40
0
1
GaN HEMT
2
3
4
5
Frequency (GHz)
RF MEMS
Parameter
Small Signal Gain
Min.
17.0
Output Power at 1dB Compression
Output Third Intercept Point
Specification
Typ.
18.5
15.9
14.4
15.4
12.8
28.2
26.7
4500
Max.
20.5
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
Condition
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>9dB
Bandwidth Determined by Return
Loss (>9dB)
Input Return Loss
21.8
dB
1950MHz
Output Return Loss
22.5
dB
1950MHz
Noise Figure
2.8
dB
1950MHz
Device Operating Voltage
2.9
3.2
3.5
V
Device Operating Current
41
45
49
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: VS =8V, ID =45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS =110Ω, TL =25°C, ZS =ZL =50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100916
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA4486Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
90
mA
Max Device Voltage (VD)
5
V
Max RF Input Power
+18
dBm
Max Junction Temp (TJ)
+150
°C
-40 to +85
°C
+150
°C
Operating Temp Range (TL)
Max Storage Temp
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD
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