2SA1774

Transistors 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS !Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. !External dimensions (Units : mm) 2SA1037AK (1) 2SA1576A (1) 0.95 0.95 1.9 2.9 0.65 0.65 0.8 0.7 0.4 (3) 0.3 (2) (3) 1.25 1.6 2.8 0.15 0.15 2.1 0.2 (2) 0.8 1.1 !Structure Epitaxial planar type. PNP silicon transistor 0.3to0.6 0to0.1 0.1to0.4 Each lead has same dimensions Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector 0to0.1 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector Abbreviated symbol : F ∗ Abbreviated symbol : F ∗ 2SA1774 0.2 (1) (2) 2SA2029 1.2 0.8 (2) (3) (1) 0.5 0.5 1.0 0.3 0.8 1.6 0.15 0.2 1.2 0.32 0.13 0to0.1 0.55 0.5 0.1Min. 0to0.1 0.7 0.15Max. 0.22 ROHM : EMT3 EIAJ : SC-75A (1) Emitter (2) Base (3) Collecto ROHM : VMT3 EIAJ : Abbreviated symbol : F ∗ Abbreviated symbol : F ∗ 2SA933AS 4 3 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE 0.4 0.4 (3) 1.6 0.2 0.2 (1) Base (2) Emitter (3) Collector 0.9 1.3 2.0 Transistors !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SA1037AK, 2SA1576A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Symbol VCBO VCEO VEBO IC Limits −60 −50 −6 −0.15 0.2 PC 0.15 0.3 Tj Tstg 150 −55~+150 ˚C ˚C W Unit V V V A (DC) Collector power dissipation 2SA2029, 2SA1774 2SA933AS Junction temperature Storage temperature !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4.0 Max. − − − −0.1 −0.1 −0.5 560 − 5.0 Unit V V V µA µA V − MHz pF IC=−50µA IC=−1µA IE=−50µA VCB=−60V VEB=−6V IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz Conditions !Packaging specifications and hFE Package Code Basic ordering unit (pieces) T146 3000 − − − − − − − T106 3000 − − Taping TL 3000 − − − − − − − T2L 8000 TP 5000 − − − − Type 2SA2029 hFE QRS 2SA1037AK QRS 2SA1576A 2SA1774 2SA933AS QRS QRS QRS hFE values are classified as follows: Item hFE Q 120~270 R 180~390 S 270~560 Transistors !Electrical characteristic curves −50 COLLECTOR CURRENT : Ic (mA) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS VCE=−6V COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C −31.5 −28.0 −24.5 −6 −21.0 −17.5 −4 −14.0 −10.5 −2 −7.0 −3.5µA 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 −100 COLLECTOR CURRENT : IC (mA) −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C Ta=25˚C −500 −450 −400 −350 −300 −8 −80 −60 −250 −200 −40 −150 −100 −20 −50µA IB=0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 −1 −2 −3 −4 −5 COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Ta=25˚C VCE=−5V −3V −1V DC CURRENT GAIN : hFE 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100˚C 25˚C −40˚C −1 Ta=25˚C DC CURRENT GAIN : hFE −0.5 200 100 −0.2 IC/IB=50 −0.1 20 10 100 50 50 VCE=−6V −5 −10 −20 −50 −100 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −1 1000 20 Cib 10 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b −0.2 Ta=100˚C 25˚C −40˚C 200 5 −0.1 100 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage