2SAR293P

Midium Power Transistors (-30V / -1A) 2SAR293P Structure PNP Silicon epitaxial planar transistor Features Low saturation voltage VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA) (1) (2) (3)  Dimensions (Unit : mm) MPT3 (SC-63) Applications Driver (1) Base (2) Collector (3) Emitter Abbreviated symbol : ML  Packaging specifications Type Package MPT3 Code T100 Basic ordering unit (pieces) 1000  Inner circuit (3) (1) Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land *3 Mounted on a 40×40×0.7 [mm] ceramic substrate Limits -30 -30 Unit V V V A A W W °C °C VCBO VCEO VEBO (1) Base (2) Collector (3) Emitter (2) DC Pulsed -6 -1 IC ICP *1 -2 PD *2 0.5 PD *3 2.0 150 Tj Tstg -55 to 150 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.11 - Rev.A 2SAR293P Electrical characteristic (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Data Sheet Symbol BVCEO BVCBO BVEBO ICBO IEBO *1 VCE(sat) Min. -30 -30 -6 270 Typ. -150 320 7 60 160 50 Max. -100 -100 -350 680 - Unit V V V nA nA - Conditions IC= -1mA IC= -10μA IE= -10μA VCB= -30V VEB= -6V VCE= -2V, I C= -100mA mV IC= -500mA, I B= -25mA VCE= -2V, I E=100mA MHz f=100MHz pF ns ns ns VCB= -10V, I E=0A f=1MHz IC= -500mA, I B1= -25mA _ IB2=25mA, VCC~ -10V hFE fT Cob ton *2 tstg tf *2 *2 *1 - www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.11 - Rev.A 2SAR293P lElectrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics -5.0mA -4.0mA -3.0mA -0.50 -2.0mA -0.45 -0.40 COLLECTOR CURRENT :IC[A] -0.35 -0.30 -1.0mA -0.25 -0.20 -0.15 -0.10 -0.05 Ta=25C 0.00 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 IB=-0.5mA -1.5mA 　 Data Sheet Fig.2 DC Current Gain vs. Collector Current( Ⅰ) 1000 Ta=25°C DC CURRENT GAIN :hFE VCE=-5V -2V 100 10 -1 -10 -100 -1000 COLECTOR TO EMITTER VOLTAGE:VCE[V] COLLECTOR CURRENT :IC[mA] Fig.3 DC Current Gain vs. Collector Current( Ⅱ) 1000 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅰ) -10 Ta=25°C Pulsed DC CURRENT GAIN :hFE -1 100 Ta=125°C 75°C 25°C -40°C IC/IB=50 20 10 -0.1 VCE=-2V Pulsed 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 COLLECTOR CURRENT :IC[mA] COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅱ) -1 -1000 Fig.6 Ground Emitter Propagation Characteristics COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] VCE=-2V Pulsed COLLECTOR CURRENT :IC[mA] Ta=125°C -100 75°C 25°C -40°C -0.1 -10 Ta=125°C 75°C 25°C IC/IB=20 Pulsed -0.01 -1 -10 -100 -1000 -40°C -1 0 -0.5 -1 -1.5 COLLECTOR CURRENT :IC[mA] BASE TO EMITTER VOLTAGE :VBE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.11 - Rev.A 2SAR293P 　 Data Sheet Fig.7 Emitter input capacitance vs. Emitter -Base Voltage Collector output capacitance vs.Collector -Base Voltage 100 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz IC=0A 1000 Fig8. Gain Bandwidth Productvs. Emitter Current 10 Cob TRANSITION FREQUENCY : f T [MHz] Cib Ta=25°C VCE=-2V f=100MHz 100 1 -0.1 -1 -10 -100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 10 10 100 EMITTER CURRENT :IE[mA] 1000 Fig9. SAFE OPERATING AREA -10 1ms COLLECTOR CURRENT : IC (A) 10ms -1 100ms -0.1 DC （Mounted on a recommended land) DC （Mounted on a ceramic board) Ta=25°C Single non repetitive pulse -0.01 -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.11 - Rev.A 2SAR293P  Switching time test circuit RL=10Ω IB1 VIN Pw IC Data Sheet _ VCC ~ -5V IB2 Pw _ 50μs ~ DUTY CYCLE≦1% IB2 BASE CURENT WAVEFORM IB1 ton 90% COLLECTOR CURRENT WAVEFORM tstg tf IC 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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