Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Dimensions (Unit : mm)
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SD1767 / 2SD1859.
2SB1189
4.0
1.5
0.4
1.0
VCBO
−80
Collector-emitter voltage
VCEO
−80
Emitter-base voltage
VEBO
−5
IC
−0.7
V
V
V
A
2SB1189
0.5
PC
W
2
2SB1238
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
1.6
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
∗1
∗2
°C
°C
∗1 When mounted on a 40×40×0.7 mm ceramic board.
∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
2SB1238
2.5
Type
∗Denotes h
2SB1189
MPT3
QR
2SB1238
ATV
QR
BD∗
T100
1000
−
TV2
2500
1.0
0.65Max.
0.5
4.4
Packaging specifications and hFE
14.5
0.9
6.8
Package
hFE
Marking
Code
Basic ordering unit (pieces)
4.5
0.5
1.5
Unit
0.4
Limits
1.5
0.4
Symbol
Collector power
dissipation
(1)
(3)
Parameter
Collector-base voltage
Collector current
0.5
(2)
3.0
Absolute maximum ratings (Ta=25C)
2.5
(1) (2) (3)
2.54 2.54
1.05
0.45
FE
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−80
−
−
V
IC=−50μA
Collector-emitter breakdown voltage
BVCEO
−80
−
−
V
IC=−2mA
Conditions
Emitter-base breakdown voltage
IE=−50μA
BVEBO
−5
−
−
V
Collector cutoff current
ICBO
−
−
−0.5
μA
VCB=−50V
Emitter cutoff current
IEBO
−
−
−0.5
μA
VEB=−4V
VCE(sat)
−
−0.2
−0.4
V
IC/IB=−500mA/−50mA
hFE
120
−
390
−
VCE/IC=−3V/−0.1A
fT
−
100
−
MHz
Cob
−
14
20
pF
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
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c 2010 ROHM Co., Ltd. All rights reserved.
○
VCE=−10V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
1/2
2010.07 - Rev.B
2SB1189 / 2SB1238
Data Sheet
Electrical characteristics curves
−50
A
−8m
−7mA
−6mA
−0.8
−5mA
−0.6
−4mA
−3mA
−0.4
−2mA
−0.2
−1mA
IB= 0mA
0
−2
0
−4
−6
−8
−10
−5
−2
−1
−0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Ta=25°C
−0.2
−0.1
IC/IB=20/1
−0.05
IC/IB=10/1
−0.02
−5
−10 −20
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
Ta=25°C
VCE= −5V
500
200
100
50
−50 −100 −200 −500
2
5
10
20
50
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs. emitter current
−0.5
−1
−2
−5
−10
−20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
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c 2010 ROHM Co., Ltd. All rights reserved.
○
−0.5
COLLECTOR CURRENT : IC (A)
EMITTER INPUT CAPACITANCE : Cib (pF)
10
−5
−10 −20
−50 −100 −200 −500
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
f=1MHz
IE=0A
100
50
Cob
20
10
−0.5
−1
−2
−5
−10
−20
Fig.6 Collector output capacitance
vs. collector-base voltage
−0.2
s∗
0m
=1
Pw
s∗
m
00
20
−2
−1.0
DC
50
−1
=1
Pw
Ta=25°C
f=1MHz
IC=0A
−3V
COLLECTOR TO BASE VOLTAGE : VCE (V)
Fig.4 Collector-emitter saturation voltage
vs.collector current
Cib
100
−1V
0
COLLECTOR CURRENT : IC (mA)
100
VCE= −5V
200
50
Fig.2 Ground emitter propagation characteristics
20
−0.01
−1
500
BASE TO EMITTER VOLTAGE : VBE (V)
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.1 Ground emitter output characteristics
Ta=25°C
−0.2
−0.1
−10
Ta=25°C
VCE= −6V
−20
DC CURRENT GAIN : hFE
−10mA
−9mA
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (A)
−1.0
−0.1
−0.05
−0.02
−0.01
−0.005
−0.002 Ta=25°C
∗Single pulse
−0.001
−0.1 −0.2 −0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area (2SB1189)
2/2
2010.07 - Rev.B
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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R1010A
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