Medium Power Transistor (32V,1A)
2SA1515S / 2SB1237
Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm)
2SA1515S
4 + 0.2 − 2 + 0.2 −
2SB1237
6.8 + 0.2 −
2.5 + 0.2 −
3 + 0.2 −
(15Min.)
0.45 +0.15 −0.05
0.65Max.
1.0
5
2.5 +0.4 −0.1
0.5
0.45 +0.15 −0.05
0.5 + 0.1 − (1) (2) (3)
2.54 2.54 (1) (2) (3) 1.05
14.5 + 0.5 −
4.4 + 0.2 −
3Min.
0.9
0.45 + 0.1 −
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SA1515S dissipation 2SB1237 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits −40 −32 −5 −1 −2 0.3 1 Tj Tstg 150 −55 to +150 Unit V V V A(DC)
∗1 ∗2
A(Pulse) W C C
PC
∗ ∗
1 Single pulse, Pw=100ms 2 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −40 −32 −5 − − − 120 − − Typ. − − − − − −0.2 − 150 20 Max. − − − −0.5 −0.5 −0.5 390 − 30 Unit V V V μA μA V − MHz pF IC= −50μA IC= −1mA IE= −50μA VCB= −20V VEB= −4V IC/IB= −500mA/−50mA VCE= −3V, IC= −0.1A VCE= −5V, IE=50mA, f=30MHz VCB= −10V, IE=0A, f=1MHz Conditions
∗ ∗
∗
Measured using pulse current.
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1/3
2010.04 - Rev.D
2SA1515S / 2SB1237
Packaging specifications and hFE
Package Code Type 2SA1515S 2SB1237 hFE QR QR − Basic ordering unit (pieces) TP 5000 Taping TU2 2500 −
Data Sheet
hFE values are classified as follows :
Item hFE Q 120 to 270 R 180 to 390
Electrical characteristics curves
-500
COLLECTOR CURRENT : IC (mA)
-200 -100 -50 -20 -10 -5 -2 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100 C 25 C −55 C
COLLECTOR CURRENT : IC (mA)
VCE= −6V
−500
DC CURRENT GAIN : hFE
−3.0 −3.5 −4.0 −400 −4.5 −5.0 −300
−2.5
Ta=25 C −2.0 −1.5
Ta=25 C 1000
500 VCE= −3V −1V 200
−200
−1.0
−100
−0.5
100
0 0
−0.4
−0.8
−1.2
IB=0mA −1.6 −2.0
50 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC current gain vs. collector current(Ι)
COLLECTOR SATURATION VOLTAGE : VCE(sat )(V)
VCE= −3V 1000
DC CURRENT GAIN : hFE
−0.5
Ta=25 C IC/IB=10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−1
−1.0
Ta=25 C
−0.8
500 Ta=100 C 200 25 C −55 C
−0.2 −0.1 −0.05
−0.6 lC= −500mA
−0.4
100 50 −1 −2
−0.02 −0.01 −1 −2
−0.2
lC= −300mA −2 −5 −10 −20 −50 −100
−5 −10 −20
−50 −100 −200 −500 −1000
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
0 −1
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
BASE CURRENT : IB (mA)
Fig.4 DC current gain vs. collector current(ΙΙ)
Fig.5 Collector-emitter saturation voltage vs. collector current
Fig.6 Collector-emitter saturation voltage vs. base current
TRANSITION FREQUENCY : fT (MHz)
Ta=25 C VCE= −5V
200
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
COLLECTOR CURRENT : IC (A)
Ta=25 C f=1MHz IE=0A
−5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.1 −0.2 −0.5 −1 −2 PW =10ms∗ PW =100ms∗ DC IC Max.∗
Ta=25 C ∗Single pulse
50
100
50
20
20 −1
−2
−5
−10
−20
−50 −100
10
−0.5
−1
−2
−5
−10
−20
−5 −10 −20
−50
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Collector output capacitance vs.collector-base voltage
Fig.9 Safe operation area
(2SB1237)
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c ○ 2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.04 - Rev.D
2SA1515S / 2SB1237
200 100 Ta=25 C
Data Sheet
TRANSIENT THERMAL RESISTANCE : Rth ( C/W)
50
20 10 5
2 0.01
0.1
1
10
100
1000
TIME : t (s)
Fig.10 Transient thermal resistance
(2SB1237)
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c ○ 2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.04 - Rev.D
Notice
Notes
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