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2SB1326TV2R

2SB1326TV2R

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SIP3

  • 描述:

    TRANS PNP 20V 5A ATV

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1326TV2R 数据手册
2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 9.5±0.5 0.9 3.0±0.2 ROHM : CPT3 EIAJ : SC-63 ∗ (1) Base (2) Collector (3) Emitter Abbreviated symbol: BH 2SB1326 2.5±0.2 4.4±0.2 0.9 6.8±0.2 0.65Max. 0.5±0.1 (1) (2) 14.5±0.5 1.0 zStructure Epitaxial planar type PNP silicon transistor 0.2 2.3+−0.1 0.5±0.1 0.9 4.0±0.3 2.5+0.2 −0.1 0.3 5.5+ −0.1 6.5±0.2 0.2 5.1+−0.1 1.5 1.5 +0.2 −0.1 1.6±0.1 2.5 0.5±0.1 4.5+0.2 −0.1 1.5±0.3 2SB1386 1.0±0.2 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. (3) 2.54 2.54 1.05 ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base ∗ Denotes h FE Rev.A 1/4 2SB1386 / 2SB1412 / 2SB1326 Transistors zAbsolute maximum ratings (Ta=25°C) Symbol Limits Collector-base voltage VCBO −30 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V −5 A(DC) Parameter IC Collector current A(Pulse) ∗1 W W ∗2 W W(Tc=25°C) ∗3 W −10 0.5 2 1 10 1 2SB1386 Collector power 2SB1412 dissipation Unit PC 2SB1326 Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗1 ∗2 ∗3 Single pulse, Pw=10ms When mounted on a 40×40×0.7 mm ceramic board. Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO −30 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −20 − − V IC= −1mA BVEBO −6 − − V IE= −50µA ICBO − − −0.5 µA VCB= −20V IEBO − − −0.5 µA VEB= −5V VCE(sat) − 0.35 −1.0 V IC/IB= −4A/ −0.1A Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2SB1386,2SB1412 DC current transfer ratio 82 − 390 − 120 − 390 − fT − 120 − MHz Cob − 60 − pF hFE 2SB1326 Transition frequency Output capacitance ∗ ∗ ∗ VCE= −2V, IC= −0.5A VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz ∗ Measured using pulse current. zPackaging specifications and hFE Taping Package Type hFE Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − 2SB1386 PQR 2SB1412 PQR − 2SB1326 QR − − − hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 Rev.A 2/4 2SB1386 / 2SB1412 / 2SB1326 Transistors zElectrical characteristic curves −200m −100m −50m −20m −10m −5m −2m −1m 0 −0.2 Fig.1 Ta=100°C 25°C −25°C 20 −1.2 −1.6 200 Ta=100°C 25°C −25°C 50 20 5 −5 −10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) −2 −1 −0.5 −0.2 Ta=100°C 25°C −25°C −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) lC/lB=10 −5 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −1 Ta=100°C 25°C −0.2 −0.1 −0.05 −25°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Ta=25°C −2 −1 −0.5 −0.2 −0.1 IC/IB=50/1 40/1 /1 30/1 10/1 −0.05 −0.02 −0.01 −2m −5m −0.0− -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Collector-emitter saturation voltage vs. collector current ( Collector-emitter saturation voltage vs. collector current ( ) −5 lC/lB=40 −2 −25°C −1 25°C −0.5 −0.2 −0.1 −0.05 Ta=100°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.8 DC current gain vs. collector current ( ) −5 Fig.6 lC/lB=30 −0.5 −5 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −2 COLLECTOR CURRENT : IC (A) Collector-emitter saturation voltage vs. collector current ( ) 20 Fig.3 1k COLLECTOR CURRENT : IC (A) −5 50 Grounded emitter output characteristics VCE= −2V 100 −2V −1V 100 −2.0 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.8 500 10 Fig.7 −0.4 VCE= −5V 200 10 IB=0A 0 5k DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 −0.02 −1 2k 1k −0.05 −5mA Fig.2 VCE= −1V 500 −0.1 −2 1k 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 2k 50 −10mA Grounded emitter propagation characteristics 5k 100 −3 0 Ta=25°C 2k −15mA −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 BASE TO EMITTER VOLTAGE : VBE (V) 5k Ta=25°C mA −30 A −25m −20mA DC CURRENT GAIN : hFE Ta=100°C 25°C −25°C −5 −50mA −45mA −40mA −4 −35mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −2 −1 −500m COLLECTOR CURRENT : IC (A) VCE= −2V −5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −10 ) Fig.9 Collector-emitter saturation voltage vs. collector current ( Rev.A ) 3/4 2SB1386 / 2SB1412 / 2SB1326 1 000 lC/lB=50 −25°C 25°C Ta=100°C −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 Ta=25°C VCE= −6V 500 200 100 50 20 10 5 2 1 −5 −10 1 −5 −10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.13 Emitter input capacitance vs. emitter-base voltage 50 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.12 Collector output capacitance vs. collector-base voltage Ta=25°C Single nonrepetitive pulse ∗ 50 COLLECTOR CURRENT : IC (A) 100 20 10 5 2 1 500m DC ms −2 200 ms 20 100 00 50 −1 500 1000 Ta=25°C f=1MHz IE=0A 500 0 =1 100 −0.5 50 100 200 1000 Pw 200 −0.2 20 =1 Pw EMITTER INTPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IC=0A 10 −0.1 10 Fig.11 Gain bandwidth product vs. emitter current Fig.10 Collector-emitter saturation voltage vs. collector current ( ) 500 5 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (A) 1000 2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −5 TRANSEITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : −VCE (V) Fig.14 Safe operation area F(2SB1412) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
2SB1326TV2R
- 物料型号:2SB1386、2SB1412和2SB1326,这些是低频晶体管,具有-20V、-5A的参数。 - 器件简介:这些PNP硅晶体管具有低VCE(sat)、优异的直流电流增益特性,并且与2SD2098、2SD2118、2SD2097互补。 - 引脚分配:2SB1386和2SB1412的引脚分配为(1)基极、(2)集电极、(3)发射极;2SB1326的引脚分配为(1)发射极、(2)集电极、(3)基极。 - 参数特性:包括集电极-基极电压、集电极-发射极电压、发射极-基极电压、集电极电流等的绝对最大额定值。 - 功能详解:提供了晶体管的电气特性,如集电极-基极击穿电压、集电极-发射极击穿电压、发射极截止电流等。 - 应用信息:文档提到了应用电路图和电路常数作为标准使用和操作的示例。 - 封装信息:提供了封装规格和hFE值的分类。
2SB1326TV2R 价格&库存

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