2SB1412

2SB1386 / 2SB1412 Transistors Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 Features 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118. Dimensions (Unit : mm) 2SB1386 2SB1412 Structure Epitaxial planar type PNP silicon transistor ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter Abbreviated symbol: BH ∗ Denotes h ∗ ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter FE Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SB1386 PC 2SB1412 Tj Tstg Symbol VCBO VCEO VEBO IC Limits −30 −20 −6 −5 −10 0.5 2 1 10 150 −55 to 150 Unit V V V A(DC) A(Pulse) ∗1 W W ∗2 W W(Tc=25°C) Collector power dissipation Junction temperature Storage temperature °C °C ∗ ∗ 1 Single pulse, Pw=10ms 2 When mounted on a 40×40×0.7 mm ceramic board. Rev.B 1/4 2SB1386 / 2SB1412 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. −30 −20 −6 − − − 82 − − Typ. − − − − − 0.35 − 120 60 Max. − − − −0.5 −0.5 −1.0 390 − − Unit V V V IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −5V IC/IB= −4A/ −0.1A VCE= −2V, IC= −0.5A VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance BVEBO ICBO IEBO VCE(sat) hFE fT Cob µA µA V − MHz pF ∗ ∗ ∗ Measured using pulse current. Packaging specifications and hFE Package Code Type 2SB1386 2SB1412 hFE PQR PQR − Basic ordering unit (pieces) Taping T100 1000 TL 2500 − hFE values are classified as follows : Item hFE P 82 to 180 Q 120 to 270 R 180 to 390 Rev.B 2/4 2SB1386 / 2SB1412 Transistors Electrical characteristic curves −10 −5 VCE= −2V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE −2 −1 −500m −200m −100m −50m −20m −10m −5m −2m −1m Ta=100°C 25°C −25°C −5 −50mA −45mA −40mA −4 −35mA Ta=25°C mA −30 A −25m −20mA 5k 2k 1k 500 200 100 50 20 10 Ta=25°C −15mA −3 −10mA −2 −5mA −1 IB=0A VCE= −5V −2V −1V 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (A) −5 −10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( ) VCE= −1V DC CURRENT GAIN : hFE VCE= −2V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5k 2k DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 Ta=25°C 1k 500 200 100 50 20 10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 Ta=100°C 25°C −25°C Ta=100°C 25°C −25°C IC/IB=50/1 40/1 /1 30/1 10/1 5 −5 −10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 5 −5 −10 −0.01 −2m −5m −0.0− -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 Ta=100°C lC/lB=10 −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 lC/lB=30 −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 Ta=100°C lC/lB=40 −25°C 25°C Ta=100°C 25°C −25°C 25°C −25°C −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (A) −5 −10 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (A) −5 −10 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (A) −5 −10 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Collector-emitter saturation voltage vs. collector current ( ) Fig.9 Collector-emitter saturation voltage vs. collector current ( ) Rev.B 3/4 2SB1386 / 2SB1412 Transistors −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 1 000 TRANSEITION FREQUENCY : fT (MHz) 1000 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=50 −25°C 25°C Ta=100°C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25°C VCE= −6V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C f=1MHz IE=0A 200 100 50 20 10 −0.1 −0.2 −0.5 −1 50 100 200 500 1000 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector-emitter saturation voltage vs. collector current ( ) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) 1000 500 COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IC=0A 100 50 20 10 Ta=25°C Single nonrepetitive pulse ∗ Pw Pw 200 100 50 5 2 1 500m 200m 100m 50m 20m 10m =1 0m s 0 =1 DC 0m s 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : −VCE (V) Fig.13 Emitter input capacitance vs. emitter-base voltage Fig.14 Safe operation area F(2SB1412) Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0