2SC3837KT146N

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’Cc and high gain. (Typ. 6ps) 3) Small NF. Dimensions (Unit : mm) 2SC5661 Packaging specifications and hFE Type 2SC5661 2SC4725 2SC4082 2SC3837K Package hFE Marking VMT3 EMT3 NP AC∗ UMT3 NP 1C∗ SMT3 NP AC∗ NP AC∗ Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 (1) Base (2) Emitter (3) Collector ROHM : VMT3 2SC4725 ∗ Denotes hFE (1) Emitter (2) Base (3) Collector ROHM : EMT3 EIAJ : SC-75A SOT-416  Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SC5661, 2SC4725 Collector power dissipation 2SC4082, 2SC3837K Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC4082 Limits 30 20 3 50 0.15 0.2 150 −55 to +150 Unit V V V mA (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 W °C °C Each lead has same dimensions 2SC3837K 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) ROHM : SMT3 EIAJ : SC-59 0.15 1.9 0.3Min. (1) 0.95 0.95 (1) Emitter (2) Base (3) Collector Each lead has same dimensions Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Parameter BVCBO BVCEO − − − 0.5 0.5 IC = 10μA IC = 1mA V μA IE = 10μA ICBO − − − − − V V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 30 20 3 − − Cob − 82 600 − − − 1500 0.9 0.5 180 − 1.5 V − MHz pF rbb'·Cc NF − − 6 4.5 13 − ps dB Transition frequency Output capacitance Collector-base time constant Noise factor BVEBO IEBO VCE(sat) hFE fT μA Conditions VCB = 15V VEB = 2V IC/IB = 20mA/4mA VCE/IC = 10V/10mA VCE = 10V , IE = −10mA , f = 200MHz VCB = 10V , IE = 0A , f = 1MHz VCB = 10V , IC = 10mA , f = 31.8MHz VCE = 12V , IC = 2mA , f = 200MHz , Rg = 50Ω This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.C 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Data Sheet 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 5.0 500 Ta=25°C IC/IB=5 200 100 50 20 10 COLLECTOR TO BASE TIME CONSTANT : Cc rbb' (ps) 1000 500 200 −5 −10 −20 −50 2 5 10 20 2 5 10 20 0.5 1 2 5 10 20 Fig.3 Capacitance vs. reverse bias voltage 10 5 2 Ta=25°C VCE=10V f=31.8MHz 1 0.1 0.2 0.5 1 2 5 50 COLLECTOR TO BASE VOLTAGE : VCB (V) 10 20 Ta=25°C VCE=10V IC=10mA 20 15 10 5 0 0.1 0.2 50 0.5 1 2 5 10 FREQUENCY : f (GHz) Fig.6 Insertion gain vs. frequency Ta=25°C IC=2mA f=200MHz NOISE FIGURE : NF(dB) 25 Ta=25°C VCE=12V f=200MHz 2 5 1 0.1 0.2 50 Fig.5 Collector to base time constance vs. collector current INSERTION GAIN : IS21el (dB) 10 0.5 0.2 25 30 Ta=25°C VCE=12V f=200MHz 15 0 Cre COLLECTOR CURRENT : IC (mA) 2 INSERTION GAIN : IS21el (dB) 1 20 Fig.4 Gain bandwidth product vs. emitter current 20 0.5 50 EMITTER CURRENT : IE (mA) 25 Cob 1.0 2 TRANSITION FREQUENCY : fT (MHz) 2000 −0.5 −1 −2 0.5 Fig.2 Collector-emitter saturation voltage vs. collector current Ta=25°C VCE=10V −0.1 −0.2 2.0 COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current 100 Ta=25°C f=1MHz IE=0A 0.1 0.1 0.2 COLLECTOR CURRENT : IC (mA) 5000 OUTPUT CAPACITANCE :CoB (pF) FEEDBACK CAPACITANCE :Cre (pF) Ta=25°C VCE=10V INSERTION GAIN : IS21el (dB) DC CURRENT TRANSFER RATIO :hFE 500 COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV) Electrical characteristic curves 50 COLLECTOR CURRENT : Ic (mA) Fig.7 Insertion gain vs. collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 20 15 10 20 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Insertion gain vs. collector voltage 2/3 0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.9 Noise factor vs. collector current 2009.12 - Rev.C 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K 30 Ta=25°C IC=2mA f=200MHz 25 NOISE FIGURE : NF(dB) Data Sheet 20 15 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Noise factor vs. collector voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 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