2SD1468STPS

Muting Transistor (15V, 1A) 2SD1468S Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500A. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) (1)Emitter (2)Collector Taping specifications (3)Base Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol Limits Unit VCBO VCES VEBO IC 30 15 5 1 V V V A PC Tj 0.3 150 Tstg −55 to +150 W °C °C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Parameter BVCBO BVCEO BVEBO 30 15 5 − − − − − − V V V IC=50μA IC=1mA IE=50μA Conditions Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage ICBO IEBO VCE(sat) − − − − − 0.08 0.5 0.5 0.4 μA μA V VCB=20V VEB=4V IC/IB=0.5mA/50mA DC current transfer ratio hFE 120 − 390 − Transition frequency fT 50 150 − MHz Output capacitance Cob − 15 30 pF VCE/IC=3V/0.1A VCE=5V , IE= −50mA , f=100MHz VCE=10V , IE=0A , f=1MHz Packaging specifications and hFE Type 2SD1468S Package hFE SPT QRS Code Basic ordering unit (pieces) TP 5000 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.B 2SD1468S Data Sheet Electrical characteristics curves 100μA 40 80μA 30 60μA 20 40μA 20μA 10 1000 Ta=25°C 500 VCE=10V 200 400 100 50 20 10 5 2 Ta=25°C 800 1000 600 2000 1000 500 200 100 50 IC/IB=50/1 20 10 20/1 5 10/1 2 1 1 2 5 10 20 50 100 200 500 1000 10000 0.2 100 50 20 10 5 2 1 2 5 10 20 50 0.6 0.8 50 1.0 1 2 1000 Ta=25°C 500 200 100 50 IC=100mA 20 10 IC=50mA 5 IC=10mA 2 1 IC=5mA 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 2 5 10 20 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 10 20 50 100 200 500 1000 Fig.3 DC current gain vs. collector current Ta=25°C VCE=5V 1000 500 200 100 50 20 10 5 2 1 0.5 1 5 COLLECTOR CURRENT : IC (mA) 50 100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current Ta=25°C IC=0A f=1MHz 100 100 50 20 10 5 2 Ta=25°C 50 ON RESISTANCE : Ron(Ω) 200 0.5 VCE=1V 100 Fig.5 Collector-emitter saturation voltage vs. base current EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Ta=25°C IE=0A f=1MHz 1 0.1 0.2 VCE=3V 200 BASE CURRENT : IB(mA) Fig.4 Collector-emitter saturation voltage vs. collector current 500 0.4 Fig.2 Ground emitter propagation characteristics COLLECTOR CURRENT : IC (mA) 1000 500 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(saT) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta=25°C 1000 10 0 Fig.1 Ground emitter output characteristics 5000 2000 20 1 COLLECTOR TO EMITTER VOLTAGE : VCE (mV) 10000 Ta=25°C 5000 200 IB=0μA 0 0 10000 DC CURRENT GAIN : hFE 120μA TRANSITION FREQUENCY : fT (MHz) 140μA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 50 20 10 5 2 1 0.5 0.2 1 0.1 0.2 0.5 1 2 5 10 20 50 EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Emitter input capacitance vs. emitter-base voltage 2/3 100 0.1 10 20 50 100 200 500 1000 2000 5000 10000 BASE CURRENT : IB (mA) Fig.9 "ON" resistance vs. base current characteristics 2009.12 - Rev.B 2SD1468S Data Sheet R(1kΩ) input Vi 1kHz 100mVrms IB V output X v0 Ron= v0 vi−v0 ×RL Fig.10 "ON" resistance measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. 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