2SD1863TV2Q

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 1.5 ±0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 3.0±0.2 Structure Epitaxial planer type NPN silicon transistor (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF 2SD1733 2SD1768S 0.65±0.1 0.75 2±0.2 3Min. 3±0.2 (15Min.) 9.5±0.5 0.5±0.1 2.5 0.9 2.3+−0.2 0.1 C0.5 1.5 1.5±0.3 5.5+−0.3 0.1 4±0.2 6.5±0.2 5.1+−0.2 0.1 0.45+0.15 −0.05 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 5 2.5 +0.4 −0.1 0.5 +0.15 0.45 −0.05 (1) (2) (3) (1) (2) (3) Taping specifications ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 2SD1863 2.5±0.2 0.65Max. 0.5±0.1 (1) (2) 4.4±0.2 14.5±0.5 1.0 0.9 6.8±0.2 (3) 2.54 2.54 1.05 0.45±0.1 Taping specifications ROHM : ATV www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/3 (1) Emitter (2) Collector (3) Base 2011.05 - Rev.D 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Data Sheet Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Parameter Collector current 1 IC A (DC) A (Pulse) ∗1 2 2SD1898 Collector power dissipation 2SD1733 PC 2SD1768S 0.5 W 2 W 1 W 10 W (Tc=25°C) 0.3 W 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2SD1863 ∗3 ∗2 ∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. ∗3 When mounted on a 40×40×0.7mm ceramic board. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 120 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 80 − − V IC=1mA Emitter-base breakdown voltage Conditions BVEBO 5 − − V IE=50μA Collector cutoff current ICBO − − 1 μA VCB=100V Emitter cutoff current IEBO − − 1 μA VEB=4V 2SD1863 DC current 2SD1733, 2SD1898 transfer ratio 2SD1768S 120 − 390 − hFE 120 − 390 − 120 − 390 − Collector-emitter saturation voltage VCE(sat) − 0.15 0.4 V Transition frequency fT − 100 − MHz Output capacitance Cob − 20 − pF ∗ VCE=3V, IC=0.5A IC/IB=500mA/20mA VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current Packaging specifications and hFE Package Taping Code T100 TL TP TV2 Basic ordering unit (pieces) 1000 2500 5000 2500 − − − − − Type hFE 2SD1898 QR 2SD1733 QR − 2SD1768S QR − − 2SD1863 QR − − − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 2/3 2011.05 - Rev.D 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Data Sheet Electrical characteristic curves Ta=25°C 100 10 1 5mA 0.8 4mA 3mA 0.6 2mA 0.4 1mA 0 0 2 IC/IB=20/1 0.1 10/1 0.05 0.02 0.01 0 10 100 Ta=25°C VCE=5V 50 20 10 5 2 1 2 Fig.5 Gain bandwidth product vs. emitter current 5 10 20 50100 200 5001000 Fig.7 Safe operating area (2SD1863) www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC Fig.3 DC current gain vs. collector current 1000 Ta=25°C f=1MHz IE=0A Ic=0A 100 10 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 200m S 2m 1m 0.1 0.2 0.5 1 2 1 Ic Max (Pulse) 500m 1000 Ta=25°C Single non-repetitive pulse 5 2 100 m 5m 10 10 COLLECTOR CURRENT : IC (mA) S 0m 10m 50 100 200 500 1000 00 S 20m 0 0 =1 m 100m 50m 20 =1 S 00 200m 10 Pw 0m =1 500m 5 EMITTER CURRENT : −IE (mA) Pw =1 DC Pw 1 Pw 2 Ic Max (Pulse) IB=0mA 10 100 1000 Ta=25°C Single non-repetitive pulse 8 200 Fig.4 Collector-emitter saturation voltage vs. collector current 5 6 500 COLLECTOR CURRENT : IC (mA) 10 4 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 0.2 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 100 Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 1.0 VCE=3V 1V COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) 2.0 1000 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ta=25°C Ta=25°C 6mA 1.0 DC CURRENT GAIN : hFE Ta=25°C VCE=5V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 1000 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1898) 3/3 2011.05 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A