2SD2114K_12

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD2114K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 1.1+0.2 −0.1 0.8±0.1 (3) +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 1.6+0.2 −0.1 2.8±0.2 0∼0.1 0.3∼0.6 ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: BB ∗ (1) Emitter (2) Base (3) Collector ∗ Denotes h FE Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 25 20 12 0.5 1 0.2 150 −55 to +150 Unit V V V A(DC) A(Pulse) W °C °C ∗ ∗ Single pulse Pw=100ms Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT∗ Cob Ron Min. 25 20 12 − − − 820 − − − Typ. − − − − − 0.18 − 350 8.0 0.8 Max. − − − 0.5 0.5 0.4 2700 − − − Unit V V V μA μA V − MHz pF Ω IC=10μA IC=1mA IE=10μA VCB=20V VEB=10V IC/IB=500mA/20mA VCE=3V, IC=10mA VCE=10V, IE= −50mA, f=100MHz VCB=10V, IE=0A, f=1MHz IB=1mA, Vi=100mV(rms), f=1kHz Conditions ∗ Measured using pulse current www.rohm.com c ○ 2012 ROHM Co., Ltd. All rights reserved. 1/3 2012.01 - Rev.C 2SD2114K Packaging specifications and hFE Package Code Type 2SD2114K hFE VW Basic ordering unit (pieces) Taping T146 3000 Data Sheet hFE values are classified as follows : Item hFE V W 820 to 1800 1200 to 2700 Electrical characteristic curves 2.0 COLLECTOR CURRENT : IC (mA) Ta=25°C 2.0μA 1.8μA 1000 COLLECTOR CURRENT : IC (mA) 1.6 1.4μA 1.2μA 800 1.2mA 1.0mA COLLECTOR CURRENT : IC (mA) 1.6μA 1.8mA 2.0mA 1.6mA 1.4mA 1000 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 Ta=100°C 25°C −25°C VCE=3V Measured using pulse current. 1.2 1.0μA 0.8μA 0.6μA 0.4μA 0.2μA 600 0.8mA 0.6mA 0.8 400 0.4mA 0.2mA 0.4 0 0 200 0 0 0.1 0.2 0.3 0.4 IB=0 0.5 2 Ta=25°C Measured using IB=0mA pulse current. 4 6 8 10 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics ( ) 10000 5000 DC CURRENT GAIN : hFE Fig.2 Grounded emitter output characteristics ( ) 5000 DC CURRENT GAIN : hFE Fig.3 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 2000 1000 500 200 100 50 20 10 5 2 1 2 5 10 20 50 100 200 5001000 IC/IB=100 50 25 10 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta=25°C Measured using pulse current. VCE=5V 10000 VCE=3V Measured using pulse current. Ta=25°C Measured using pulse current. 2000 1000 500 200 100 50 20 Ta=100°C 25°C −25°C 1V 3V 50 100 200 500 1000 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 500 200 100 50 20 10 5 2 1 2 5 10 20 Ta=100°C 25°C −25°C IC/IB=25 Measured using pulse current. 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 IC/IB=10 25 50 100 Ta=25°C Pulsed BASE SATURATION VOLTAGE : VBE(sat) (mV) 2000 BASE SATURATION VOLTAGE : VBE(sat) (mV) 10000 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta=−25°C 25°C 100°C lC/lB=10 Measured using pulse current. 50 100 200 5001000 50 100 200 500 1000 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Fig.9 Base-emitter saturation voltage vs. collector current ( ) www.rohm.com c ○ 2012 ROHM Co., Ltd. All rights reserved. 2/3 2012.01 - Rev.C 2SD2114K COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10000 TRANSITION FREQUENCY : fT (MHz) Data Sheet Ta=25°C VCE=10V Measured using pulse current. 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 5000 2000 1000 500 200 100 50 20 10 −1 −2 ON RESISTANCE : Ron (Ω) Ta=25°C f=1MHz IE=0A 100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) 1 2 5 10 COLLECTOR TO BASE VOLTAGE : VCB (V) BASE CURRENT : IB (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Fig.12 Output-on resistance vs. base current Ron measurement circuit RL=1kΩ Input vi 1kHz 100mV(rms) IB V Output v0 Ron= v0 vi−v0 ×RL www.rohm.com c ○ 2012 ROHM Co., Ltd. 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