2SD2391

Medium Power Transistor (60V, 2A) 2SD2391 Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561. Dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg + Limits 60 60 6 2 6 0.5 2 150 −55 to +150 Unit V V V A A W ∗1 ∗2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature + °C °C ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board. Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob Min. 60 60 6 − − − 120 45 − − Typ. − − − − − 0.13 − − 210 21 Max. − − − 0.1 0.1 0.35 270 − − − Unit V V V μA μA V − − MHz pF IC=50μA IC=1mA IE=50μA VCB=50V Conditions VEB=5V IC/IB=1A/50mA VCE/IC=−2V/−0.5A VCE/IC=−2V/−1.5A VCE=2V, IE=−0.5A, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ ∗ Packaging specifications and hFE Type 2SD2391 MPT3 Q DT∗ T100 1000 ∗Denotes hFE Package hFE Marking Code Basic ordering unit (pieces) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.A 2SD2391  Electrical characteristic curves 2.0 Data Sheet COLLECTOR CURRENT : lC (A) COLLECTOR CURRENT : IC (A) m 20 A 18 mA 16mA 14mA 12mA 10mA 5 2 1 500m VCE=2V 1000 500 Ta=100°C VCE=2V 1.6 8mA 6mA DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 0 0.8 4mA 0.4 IB=0mA 2mA 0.0 0 1 2 3 Ta=25°C 4 5 Ta=1 0 1.2 200m 0°C 25°C −40°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10m 20m 50m 100m 200m 500m 1 2 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 500 Ta=25°C 1000 500 200 100 50 25°C Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) IC/IB=20 1000 500 200 100 50 20 10 5 2 1 5m 10m 20m 50m100m 200m 500m 1 IC/IB=50 20 10 Ta=25°C DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 10m 20m 50m 100m 200m 500m 1 VCE=5V 2V 1V 20 10 5 2 1 5m 10m 20m −40°C 2 5 10 50m 100m 200m 500m 1 2 5 2 5 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 −2m −10m −100m 500 Cib 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 Cob COLLECTOR CURRENT : lC (A) Ta=25°C VCE=2V 1000 Ta=25°C f=1MHz IE=0A IC=0A 50 20 10 Ic max(Pulse) PW 5 = 2 1 500m DC 10 =1 Pw =1 PW s ms 0m s 0m 200m 100m 50m −1 −2 50 100 20m Ta=25°C Single pulse 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Iutput capacitance vs. voltage Fig.9 Safe operating area www.rohm.com c ○ 2009 ROHM Co., Ltd. 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