0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BD63003MUV-E2

BD63003MUV-E2

  • 厂商:

    ROHM(罗姆)

  • 封装:

    VFQFN32_EP

  • 描述:

    多相 电机驱动器 NMOS PWM VQFN032V5050

  • 数据手册
  • 价格&库存
BD63003MUV-E2 数据手册
Datasheet Three Phase Brushless Motor Pre-driver BD63003MUV General Description Key Specifications BD63003MUV is a Pre-driver IC for 3-phase brushless motor. It generates a driving signal from the Hall sensor and applies PWM in the input control signal for motor control. It has a built-in booster circuit which allows Nch-Nch MOS transistors to be used as the external power Transistor. It is compatible with 12 V or 24 V power supply and has various controls and built-in protection functions, making it useful for variety of purposes. Since the IC adopts a small package, it can also be used on small diameter motors.        Power Supply Voltage Rating: Low Side Gate Drive Voltage: High Side Gate Drive Voltage: Operating Temperature Range: Current Limit Detect Voltage: UVLO Lockout Voltage: OVLO Lockout Voltage: Package 40 V 10 V (Typ) 10 V (Typ) -40 °C to +85 °C 0.2 V±10 % 6.0 V (Typ) 28.5 V (Typ) W (Typ) x D (Typ) x H (Max) 5.0 mm x 5.0 mm x 1.0 mm VQFN032V5050 Features          Built in 120° Commutation Logic Circuit Driving with Nch-Nch MOS Transistors Built in Peak Current Control Function For Controller Input of 3.3 V and 5 V PWM Control Mode (lower arm switching) CW/CCW Function Short Brake Function FG Output (1FG / 3FG conversion) Built-in Protection Circuit for Current Limit (CL), Overheating (TSD), Under Voltage (UVLO), Over Voltage (OVLO), Motor Lock (MLP) Applications  OA Machines  Other General Civil Equipment Typical Application Circuit 0.1 µF 0.1 µF VREG3 VREG 26 VCC 32 31 30 25 0.1 µF HUP HU HUN HVP HV HVN HWP HW HWN 19 CP1 10 UH 8 UL 11 20 13 21 16 22 14 23 9 24 12 CW 3 BRKB 4 18 PWMB 2 5 17 6 1 SEL2 CP2 29 15 SEL1 47 µF VG 0.1 µF 0.1 µF 0.1 µF 0.1 µF VH M VL WH WL U V W RCL RCLS IREF FG 27 GND 〇Product structure : Silicon integrated circuit www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 28 7 TEST 〇This product has no designed protection against radioactive rays. 1/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Contents General Description ........................................................................................................................................................................ 1 Features.......................................................................................................................................................................................... 1 Applications .................................................................................................................................................................................... 1 Key Specifications .......................................................................................................................................................................... 1 Package .......................................................................................................................................................................................... 1 Typical Application Circuit ............................................................................................................................................................... 1 Pin Configuration ............................................................................................................................................................................ 3 Pin Descriptions .............................................................................................................................................................................. 3 Block Diagram ................................................................................................................................................................................ 4 Description of Blocks ...................................................................................................................................................................... 5 Absolute Maximum Ratings .......................................................................................................................................................... 11 Thermal Resistance ...................................................................................................................................................................... 11 Recommended Operating Conditions ........................................................................................................................................... 11 Electrical Characteristics............................................................................................................................................................... 12 Timing Chart ................................................................................................................................................................................. 14 I/O Equivalence Circuits................................................................................................................................................................ 15 Operational Notes ......................................................................................................................................................................... 17 Ordering Information ..................................................................................................................................................................... 19 Marking Diagram .......................................................................................................................................................................... 19 Physical Dimension and Packing Information ............................................................................................................................... 20 Revision History ............................................................................................................................................................................ 21 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Pin Configuration HWN HWP HVN HVP HUN HUP RCLS RCL (TOP VIEW) 24 23 22 21 20 19 18 17 VREG 25 16 WH VREG3 26 15 W SEL2 27 14 WL TEST 28 13 VL CP1 29 12 V CP2 30 11 VH VG 31 10 UH VCC 32 9 U 4 5 PWMB CW BRKB IREF Pin Descriptions Pin No. Pin Name 1 FG 2 PWMB 3 CW 4 6 7 8 UL 3 GND 2 SEL1 1 FG EXP-PAD Pin No. Pin Name 1FG / 3FG output 17 RCL PWM input (negative logic) 18 RCLS RCL sense input Changing direction of rotation (H: CW, L: CCW) 19 HUP U phase hall input + BRKB Brake input (negative logic) 20 HUN U phase hall input - 5 IREF Output driving current setting 21 HVP V phase hall input + 6 SEL1 Function setting input 1 22 HVN V phase hall input - 7 GND GND 23 HWP W phase hall input + 8 UL U phase lower output 24 HWN W phase hall input - 9 U U phase output feedback 25 VREG VREG output 10 UH U phase upper output 26 VREG3 VREG3 output 11 VH V phase upper output 27 SEL2 Function setting input 2 12 V V phase output feedback 28 TEST TEST input (GND) 13 VL V phase lower output 29 CP1 Charge pump setting 1 14 WL W phase lower output 30 CP2 Charge pump setting 2 15 W W phase output feedback 31 VG Charge pump output 16 WH W phase upper output 32 VCC - EXP-PAD Function Function Detect voltage input for over current Power supply Connect EXP-PAD to GND www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 3/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Block Diagram VREG3 VCC VG 26 32 31 VREG VREG 25 HUP 19 HUN 20 HVP 21 HVN 22 HWP 23 HWN 24 CHARGE PUMP VREG PRE DRIVER LOGIC 5 CW BRKB 3 30 CP2 29 CP1 10 UH 8 UL 11 VH 13 VL 16 WH 14 WL 9 U 12 V 15 W 17 RCL 18 RCLS 5 IREF 1 FG 4 OVLO PWMB 2 TSD OSC SEL1 6 SEL2 27 7 GND www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/21 UVLO 28 TEST TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Description of Blocks Commutation logic (120° commutation) HU H H H L L HV L L H H H HW Truth Table CW (CW = H or OPEN) FG UH UL VH VL WH WL 1FG 3FG H -------------------- PWM PWM(Note 1) H L L L L Hi-z L -------------------- PWM(Note 1) L L H L L L L -------------------- PWM PWM(Note 1) H L L Hi-z L -------------------- PWM(Note 1) L L Hi-z L L -------------------- PWM PWM(Note 1) Hi-z Hi-z -------------------- Hi-z L L L H PWM L H H PWM L L L L H L L H L PWM PWM(Note 1) H H H L L L L L L L L L L L L L L L L L Hi-z Hi-z HU HV HW CCW (CW = L) UH FG UL VH VL -------------------- PWM(Note 1) L PWM -------------------- H L H H L H L L H L PWM L WH WL 1FG 3FG L L L Hi-z -------------------- PWM(Note 1) L L H H L L L H L PWM PWM(Note 1) L Hi-z L H L PWM -------------------- PWM(Note 1) H L L L Hi-z L -------------------- L H H PWM PWM(Note 1) L L H L Hi-z Hi-z L L H L L -------------------- PWM PWM(Note 1) H L Hi-z L H H H L L L L L L L L L L L L L L L L L Hi-z Hi-z (Note 1) When PWM = "L", PWM = "H". When PWMB = H, PWMB = L. 1. Regulator Output Pin (VREG) This is constant voltage output pin of 5 V (Typ). Connect capacitors of 0.01 µF to 1 µF. Be careful that VREG current does not exceed absolute maximum ratings in case of being used for bias power supply of hall elements. 2. Regulator Output Pin (VREG3) This is constant voltage output pin of 3.3 V (Typ). VREG3 can be used for bias voltage of hall elements. Be careful that VREG3 current does not exceed absolute maximum ratings in case of being used. VCC VREG3 HU HV HW Figure 1. VREG3 reference circuit www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Description of Blocks - continued 3. PWM Input Pin (PWMB) Speed can be controlled by inputting PWM signal into the PWMB pin (negative logic). Synchronous rectifier PWM can be achieved through lower switching. When PWMB = "L", lower external FET that matches to Hall input logic is “L”. When PWMB = "H" or open, lower external FET is "H". When PWMB = "H" or OPEN status is detected for 104 µs (Typ), the synchronous rectifier is OFF. Synchronous rectifier turns ON through the falling edges of subsequent PWMB signals. At startup, External FET keeps “Hi-z” states in which all phase is OFF (stand-by) until PWMB = "L" status is detected 2 µs (Typ) or more [figure 2]. However, the internal regulator of VREG, VG, the other regulator, protection function of OVLO, and the other ones are operated in the stand-by. Additionally, the PWMB pin is pulled up by internal 3.3V (Typ) through a resistance of 100 kΩ ± 30 kΩ and pulled down by GND through a resistance of 1000 kΩ ± 300 kΩ. PWMB PWM phase Lower External FET H or OPEN OFF L ON VG VG VCC VCC VG VCC VG VGUVON VCC V GUVON VUVH VUV H 2 µs (typ) 2 µs (typ) PWMB Driver status PWMB = "L" PWMB Active Driver status Hiz 1. PWMB = "L" (VCC Rise Up) PWMB = "H" Hiz PWMB = "L" Active 2. PWMB = "H" (VCC Rise Up) Figure 2. PWMB Status 4. BRKB Pin (BRKB) Motor rotation can be quickly stopped using the BRKB Pin (negative logic). When BRKB = "L", this causes all the upper external FET to turn "OFF" and all the lower external FET to turn "ON", initiating short break operation. When BRKB = "H" or OPEN, then short brake operation will be released. Additionally, the BRKB pin is pulled up by internal 3.3V (Typ) through a resistance of 100 kΩ ± 30 kΩ and pulled down by GND through a resistance of 1000 kΩ ± 300 kΩ. BRKB Operation H or OPEN Normal L Short brake www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Description of Blocks - continued 5. Rotatory Direction Change Pin (CW) Rotation direction can be switched with the CW pin. When CW = "H" or OPEN, the direction is Clockwise (CW). When CW = "L", the direction will be Counter Clockwise (CCW). We do not recommend switching rotation direction when motor is rotating. If rotation direction is switched when rotating, the operation is the following due to the condition of SEL1. (1) SBRK = "Enable" (SEL1 = "H" or "M1") After having performed short brakes movement until hall frequency becomes approximately 40 Hz (Typ) or less, rotatory direction is replaced. In the case of this condition, do not change the logic of CW for 10 ms after brakes cancellation by the BRKB input (Figure 3). less than 10 ms more than 10 ms BRKB BRKB CW CW Driver status short brake Driver status Active short brake Active Active 10 ms 10 ms I. short brake OK (SBRK = "Enable") II. NG (SBRK = "Enable") Figure 3. BRKB, CW Control Timing Limitation 1 (2) SBRK = "Disable" (SEL1 = "M2" or "L") Without the short brake such as (1), direction is replaced. In this case, be careful since high current may sometimes flow in the external FET when the direction is replaced as described. In addition, there is no limitation in timing of BRKB and CW such as (1) in this condition (Figure 4). less than 10 ms BRKB CW Driver status short brake Active 10 ms III. OK (SBRK = "Disable") Figure 4. BRKB, CW Control Timing Limitation 2 In addition, the CW pin is pulled up by internal 3.3 V (Typ) through resistance of 100 kΩ ± 30 kΩ and pulled down by GND through a resistance of 1000 kΩ ± 300 kΩ. CW Direction H or OPEN CW L CCW www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 7/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Description of Blocks - continued 6. 7. Select Pin 1 (SEL1) The SEL1 pin can be used to select 1FG / 3FG and “Enable” or “Disable” of the short brakes (SBRK) at the direction change with the CW pin. The SEL1 pin is a 4 input pin and can be set by being OPEN, 220 kΩ [± 5 %] to GND, 47 kΩ [± 5 %] to GND, and tied to GND. In addition, the SEL1 pin is pulled up by VREG through resistance of 100 kΩ ± 30 kΩ. SEL1 FG SBRK(CW/CCW) H (OPEN) 3FG Enable M1 (220 kΩ [±5 %] to GND) 1FG Enable M2 (47 kΩ [±5 %] to GND) 1FG Disable L (tied to GND) 3FG Disable Select Pin 2 (SEL2) The SEL2 pin can be used to select Enable/Disable of MLP and OVLO. In addition, the SEL2 pin is pulled up by VREG through resistance of 100 kΩ ± 30 kΩ. SEL2 MLP OVLO H (OPEN) 2.2 s (Typ) 28.5 V (Typ) M1 (220 kΩ [±5 %] to GND) Disable 28.5 V (Typ) M2 (47 kΩ [±5 %] to GND) 2.2 s (Typ) Disable L (tied to GND) Disable Disable 8. FG Output pin (FG) FG signal is composed by a hall signal and is outputted by the FG pin. Changing between 1FG and 3FG can be done with SEL1. In addition, the FG pin, which is an open drain output, should be externally pulled-up by a resistance of the about 10 kΩ to 100 kΩ. 9. Hall Input (Hall: HUP, HUN, HVP, HVN, HWP, HWN) Hall comparator inside the IC is designed with hysteresis (±15 mV (Typ)) in order to prevent malfunction due to noise. Always set correct bias current for the Hall element so that the amplitude of Hall input voltage will be the minimum input voltage (VHALLMIN) or more. Furthermore, the output of the comparator has a digital filter of 2 µs (Typ). However, if it can’t prevent the noise, it is recommended to connect a ceramic capacitor with about 100 pF to 0.01 µF value between the input pins of the Hall comparator. The in-phase input voltage range (VHALLCM: 0 V to VREG-1.7 V (Typ)) is designed for Hall comparator, set within this range when applying bias to the Hall element. When all Hall inputs become "H" or "L", all external FETs will be "OFF" by the hall input abnormal detection circuit. 10. Booster Circuit There is built-in booster circuit used to drive upper Nch MOS transistor. The VG pins can produce a boost voltage (the VCC voltage+10 V (Typ) through connecting capacitors between CP1 - CP2 and between VG - VCC. We recommend connected capacitors to be 0.1 µF or more. Because CP1 and CP2 are oscillated, the capacitors have to be located near IC. If need, add GND line for the shield. In addition, because VG voltage are boosted from the voltage that based on VCC, if VCC voltage is instability, it can be caused the malfunction such as VG voltage rise up. Therefore, add capacitor between VCC and GND as necessary to stabilize VCC voltage when using large current and motor with large BEMF. Because there is built-in protection circuit for insufficient booster, when VG voltage is V GUVON (VCC+7 V (Typ)) or less, all external FETs will be "OFF". 11. Current Limit Circuit (CL Circuit) Output current limit (Current Limit: CL) circuit can be formed by connecting a low resistance used for detecting current between the RCL pin and the RCLS pin. When RCL voltage is detected 0.2 V (Typ) or more, all lower external FET will be "OFF". It returns by itself after a set amount of time (32 µs (Typ)). This operation does not synchronize with PWM signal input into the PWMB pin. In addition, in order to avoid misdetection of output current due to RCL noise, the IC sets up a noise-masking period (1 µs to 2 µs (Typ)). During the noise-masking period, current detection is disabled. RCLS is the sense line of RCL. If RCLS becomes OPEN, Current Limit may not be normally Function. Connect the RCLS pin to the GND nearest to the current sense resistor’s pin. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 8/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Description of Blocks - continued 12. Thermal Shutdown Circuit (TSD Circuit) When chip temperature of driver IC rises and exceeds the set temperature (165 °C (Typ)), the thermal Shutdown circuit (Thermal Shutdown: TSD) begins working. At this time, all external FETs will be "OFF". In addition, the TSD circuit is designed with hysteresis (25 °C (Typ)), and will return to normal working condition when the chip temperature drops. Moreover, the purpose of the TSD circuit is to protect the driver IC from thermal breakdown, therefore, temperature of this circuit will be over working temperature when this circuit operates. Thus, thermal design should have sufficient margin, so do not take continuous use and operation of the circuit as precondition. 13. Under Voltage Lock Out Circuit (UVLO Circuit) There is a built-in under voltage lockout circuit (Under Voltage Lockout: UVLO circuit) used to ensure the minimum power supply voltage for drive IC to work and to prevent error in the operation of IC. When VCC voltage declined to VUVL (6 V (Typ)), all external FETs should be "OFF". At the same time, UVLO circuit is designed with hysteresis (1 V (Typ)), so when VCC voltage reaches VUVH (7 V (Typ)) or more, it will enter normal operation. 14. Over Voltage Lock Out Circuit (OVLO Circuit) There is built-in over voltage lockout circuit (Over Voltage Lockout: OVLO circuit) used to restrain the increase of VCC voltage when motor is decelerating. When VCC voltage is 28.5 V (Typ) or more, short brake action will be conducted. In order to avoid misdetection, the IC sets up a noise-masking period (2 µs to 3 µs (Typ)). The short brake operation is released after a certain period of time (4 ms) when the VCC voltage is less than or equal to 27.5 V (Typ) and returns to normal operation. OVLO function does not work in case of SEL2 = “Disable” 15. Motor Lock Protection Circuit (MLP Circuit) There is built-in motor lock protection circuit (Motor Lock Protection: MLP), ON/OFF of MLP circuit can be set by the SEL2 pin. When the MLP setting of SEL2 = "Enable" and the Hall signal logic does not change for 2.2 s (Typ) or more, all external FETs will all be latched as "OFF". Latch can be released through switching BRKB/CW logic. Moreover, when PWMB = "H" or OPEN state is detected for about 15 ms (Typ), latch can be released by the falling edges of subsequent PWMB. However, the MLP circuit does not operate when the MLP setting of the SEL2 pin is "Disable" and when the short brake (including when switching the direction of rotation) or the TSD circuit is in operation. 16. Predriver Output The drive signal generated by the internal logic outputs the drive signal to the external output power transistor. Driving voltage of upper gate is VG voltage (VCC+10 V (Typ)) and driving voltage of lower gate is the internal REG voltage (10 V (Typ)). In addition, a dead time (0.2 µs (Typ)) is designed between the driving signals of upper gate and lower gate in order to prevent the upper and lower FET from being set to ON at the same time during synchronous rectifier PWM operation. Due to the influence of the motor’s counter electromotive force, the output feedback pin (U, V, W) might swing under GND potential, which can cause malfunctions or destruction. When negative potential exceeds -2 V (min), Schottky diode can be inserted to prevent malfunction or destruction. 17. Pre-driver Output Peak Current Setting Pin (IREF) A current of the pre-driver output can be set by connecting a resistor between the IREF Pin and GND. Note that if the IREF pin is connected with GND or open, it may cause malfunction. The range of the resistance is 27 kΩ [±5 %] to 150 kΩ [±5 %]. About the approximate value of the output current, refer to the following table. Resistor Value [kΩ] Output Source Current [mA] Output Sink Current [mA] 150 16 27 120 18 33 100 22 40 82 26 48 68 31 58 56 36 68 47 42 84 39 48 96 33 55 113 27 63 136 Figure 5. The reference value of Pre-driver output current www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 9/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Description of Blocks - continued 18. Control Signal Sequence Though we recommend you to input control signals of the CW, PWMB, and BRKB pins after inputting VCC, there won’t be any problem if done otherwise. However, if MLP = "Enable" is set at startup, the MLP circuit will not be able to start the motor if the rotation of the motor is not detected within the set time (the edge of the FG signal is not input). Moreover, the control signal and the IC internal signal are given priority. Refer to the table below. Priority of Control Signal Priority Input / Internal signals 1st 2nd UVLO BRKB(Note 2), CW (Note 2), PWMB (Note 2) 3rd TSD, MLP, HALLERR 4th OVLO 5th VG_UVLO, stand-by 6th BRKB 7th CL 8th PWMB, CW, (Note 2)  means rising and falling edge of the signal. Refer to a figure of in condition transition for the signal name. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 10/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Absolute Maximum Ratings (Ta = 25 °C) Parameter Symbol Rating Unit Power Supply Voltage VCC -0.3 to +40.0 V VG Voltage VG -0.3 to +52.0 V V(U, V, W) 40 V VFG -0.3 to +7.0 V RCL Voltage VRCL -0.3 to +5.5 V RCLS Voltage VRCLS -0.3 to +0.3 V Voltage of Input of Control and Hall Pins VI/O -0.3 to +7.0 V FG Output Current IFG 5 mA IVREG -30 mA External FET Output Feedback Voltage FG Voltage VREG Output Current VREG3 Output Current IVREG3 -5 mA Maximum Junction Temperature Tjmax 150 °C Tstg -55 to +150 °C Storage Temperature Range Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance (Note 3) Parameter Symbol Thermal Resistance (Typ) 1s(Note 5) 2s2p(Note 6) Unit VQFN032V5050 Junction to Ambient θJA 138.9 39.1 °C/W Junction to Top Characterization Parameter(Note 4) ΨJT 11 5 °C/W (Note 3) Based on JESD51-2A (Still-Air). (Note 4) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 5) Using a PCB board based on JESD51-3. (Note 6) Using a PCB board based on JESD51-5, 7. Layer Number of Measurement Board Single Material Board Size FR-4 114.3 mm x 76.2 mm x 1.57 mmt Top Copper Pattern Thickness Footprints and Traces 70 μm Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Top Thermal Via(Note 7) Pitch Diameter 1.20 mm Φ0.30 mm 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm (Note 7) This thermal via connects with the copper pattern of all layers. Recommended Operating Conditions Parameter Operating Temperature Power Supply Voltage www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Symbol Min Typ Max Unit Topr VCC -40 10.8 +25 24.0 +85 26.4 °C V 11/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Electrical Characteristics (Unless otherwise specified VCC = 24 V, Ta = 25 °C) Parameter Symbol Min Typ Max Unit Conditions Whole Circuit Electric Current ICC - 4.5 9 mA The VREG Voltage VREG 4.5 5.0 5.5 V IVREG = -10 mA The VREG3 Voltage VREG3 3.0 3.3 3.6 V IVREG3 = -1 mA VG1 VCC+7 VCC+10 VCC+11.5 V IVG = 15 mA VGUVON VCC+6 VCC+7 VCC+8 V VGSH1 7 10 11.5 V VGSL1 7 10 12.5 V IRNG1 - - 70 mA RIREF = 27 kΩ IRNG2 - - 140 mA RIREF = 27 kΩ IOH - 18 - mA RIREF = 120 kΩ IOL - 33 - mA RIREF = 120 kΩ Booster Circuit VG Voltage VG UVLO Voltage Driver Output High Side VGS Gate Drive Voltage Low Side VGS Gate Drive Voltage Source Electric Current Setting Range Sink Electric Current Setting Range Output Peak Source Current Output Peak Sink Current IREF Voltage VIREF 1.2 V Hall Input Input Bias Current Range of In-phase Input Voltage Minimum Input Voltage IHALL -2.0 -0.1 +2.0 µA VHALLCM 0 - VREG-1.7 V HYS Level + VHALLMIN 50 - - mVp-p VHALLHY+ 5 15 25 mV HYS Level - VHALLHY- -25 -15 -5 mV VIN = 0 V Input of Control: PWMB, CW, BRKB Input Electric Current IIN -46 -33 -20 µA The Input H Voltage VINH 2.0 - 5.5 V The Input L Voltage VINL 0 - 0.8 V tPLSMIN 1 - - ms CW, BRKB fPWM 10 - 50 kHz PWMB ISEL -80 -50 -30 µA VSEL = 0 V Output Voltage L VFGOL 0 0.1 0.3 V IFG = 2 mA Leak Current IFGLEAK - 0 1 µA VFG = 5 V The Detection Voltage VCL 0.18 0.20 0.22 V Input Bias Electric Current IRCL -32 -20 -12 µA Input Voltage Range VRCL -0.3 - +1.0 V The Smallest Input Pulse Width Input Frequency Range VIN = 0 V Input of Control: SEL1, SEL2 Input Current FG Output Current Limit www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 12/21 VRCL = 0V TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Electrical Characteristics - continued (Unless otherwise specified VCC = 24 V, Ta = 25 °C) Parameter Symbol Min Typ Max Unit Conditions Release Voltage VUVH 6.5 7.0 7.5 V Lockout Voltage VUVL 5.5 6.0 6.5 V Release Voltage VOVL 26.5 27.5 28.5 V OVLO Enable Lockout Voltage VOVH 27.5 28.5 29.5 V OVLO Enable tMLP 1.54 2.20 2.86 s MLP Enable UVLO OVLO MLP Motor Lock Protection Detect Time www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 13/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Timing Chart CW Direction (CW = "H" or OPEN) HU HV HW U PWM PWM PWM V W PWM PWM PWM PWM PWM PWM PWM PWM PWM PWM PWM PWM PWM CCW Direction (CW = "L") HU HV HW U PWM V W PWM PWM PWM PWM PWM PWM PWM FG Output FG (3FG) FG (1FG) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 14/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV I/O Equivalence Circuits Pin No Pin Name Pin No Equivalence Circuit Pin Name Equivalence Circuit VREG FG 1 2 3 4 FG PWM B CW BRKB 100 kΩ PWMB BRKB CW 10 kΩ 1000 kΩ VREG 100 kΩ 5 50 Ω IREF 6 27 IREF SEL1 SEL2 SEL1 SEL2 10 kΩ VG Internal Reg 8 13 14 UL VL WL UL/VL/WL 200 kΩ 9 10 11 12 15 16 U UH VH V W WH 19 20 21 22 23 24 HUP HUN HVP HVN HWP HWN UH/VH/WH 200 kΩ U/V/W VREG 250 kΩ RCL 17 18 2 kΩ 2 kΩ RCL RCLS RCLS www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 25 kΩ 15/21 HUP HUN HVP HVN HWP HWN 2 kΩ TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV I/O Equivalence Circuits - continued VREG VCC 25 VREG 26 VREG 145 kΩ VREG3 50 kΩ 36 kΩ VREG 28 TEST TEST VREG3 64 kΩ VCC 29 10 kΩ CP1 CP1 100 kΩ VG 30 31 32 CP2 VG VCC CP2 VCC www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 16/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Recommended Operating Conditions The function and operation of the IC are guaranteed within the range specified by the recommended operating conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics. 6. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 7. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned OFF completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 17/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Operational Notes – continued 8. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 9. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. 10. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C Pin A N P+ N P N P+ N Parasitic Elements N P+ GND E N P N P+ B N C E Parasitic Elements P Substrate P Substrate Parasitic Elements Pin B B Parasitic Elements GND GND N Region close-by GND Figure 6. Example of Monolithic IC Structure 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 12. Thermal Shutdown Circuit (TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 18/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Ordering Information B D 6 3 0 0 3 M U V - Package MUV: VQFN032V5050 E2 Packaging and forming specification E2: Embossed tape and reel Marking Diagram VQFN032V5050 (TOP VIEW) Part Number Marking D 6 3 0 0 3 LOT Number Pin 1 Mark www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 19/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Physical Dimension and Packing Information Package Name www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 VQFN032V5050 20/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 BD63003MUV Revision History Date Revision 10.Jul.2020 001 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Changes New Release 21/21 TSZ02201-0P1P0CZ02290-1-2 10.Jul.2020 Rev.001 Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001
BD63003MUV-E2 价格&库存

很抱歉,暂时无法提供与“BD63003MUV-E2”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BD63003MUV-E2
    •  国内价格
    • 1+15.87748
    • 10+10.61423
    • 50+9.82474
    • 100+8.33349
    • 200+7.87734
    • 500+7.85979
    • 1000+7.10540

    库存:2500

    BD63003MUV-E2
      •  国内价格 香港价格
      • 1+53.196651+6.44840
      • 10+12.4017810+1.50332
      • 50+8.4241550+1.02116
      • 100+7.92291100+0.96040
      • 500+7.59144500+0.92022
      • 1000+7.526761000+0.91238
      • 2000+7.478262000+0.90650
      • 4000+7.454004000+0.90356

      库存:510