CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□NB1WHFV series
No.11020EBT04
●Description
The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple
rejection ratio of 80 dB (Typ., 1 kHz). They are ideal for use in high-performance, analog applications and offer improved line
regulation, load regulation, and noise characteristics. Using the ultra-small HVSOF5 package, which features a built-in heat
sink, contributes to space-saving application designs.
●Features
1) High accuracy output voltage: ± 1%
2) High ripple rejection ratio: 80 dB (Typ., 1 kHz)
3) Stable with ceramic capacitors
4) Low bias current: 60 µA
5) Output voltage on/off control
6) Built-in overcurrent and thermal shutdown circuits
7) Ultra-small HVSOF5 power package
●Applications
Battery-driven portable devices, etc.
●Product line
150 mA BH□□NB1WHFV Series
Product name
BH□□NB1WHFV
2.5
2.8
2.85
2.9
3.0
3.1
3.3
√
√
√
√
√
√
√
Package
HVSOF5
Model name: BH□□NB1W□
a
b
Symbol
Description
Output voltage specification
□□
Output voltage (V)
□□
Output voltage (V)
25
2.5 V (Typ.)
30
3.0 V (Typ.)
28
2.8 V (Typ.)
31
3.1 V (Typ.)
2J
2.85 V (Typ.)
33
3.3 V (Typ.)
29
2.9 V (Typ.)
a
b
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© 2011 ROHM Co., Ltd. All rights reserved.
Package HFV: HVSOF5
1/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Absolute maximum ratings
Parameter
Symbol
Ratings
Unit
Applied power supply voltage
VMAX
−0.3 to +6.0
V
Pd
410 *1
mW
Operating temperature range
Topr
−40 to +85
°C
Storage temperature range
Tstg
−55 to +125
°C
Power dissipation
*1: Reduce by 4.1 mW/C over 25C, when mounted on a glass epoxy PCB (70 mm 70 mm 1.6 mm).
●Recommended operating ranges (not to exceed Pd)
Parameter
Symbol
Ratings
Unit
Power supply voltage
VIN
2.5 to 5.5
V
Output current
IOUT
0 to 150
mA
●Recommended operating conditions
Parameter
Symbol
Ratings
Min.
Typ.
Max.
Unit
Input capacitor
CIN
0.1 *2
—
—
µF
Output capacitor
CO
2.2 *2
—
—
µF
*2
Conditions
The use of ceramic
capacitors is recommended.
The use of ceramic
capacitors is recommended.
Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value cannot change as time progresses.
●Electrical characteristics
(Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, CIN = 0.1 µF, CO = 2.2 µF)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Output voltage
VOUT
VOUT0.99
VOUT
VOUT1.01
V
IOUT = 1 mA
Circuit current
IGND
—
60
100
µA
IOUT = 50 mA
Circuit current (STBY)
ISTBY
—
—
1.0
µA
STBY = 0 V
RR
—
80
—
dB
VRR = −20 dBv, fRR = 1 kz,
IOUT = 10 mA
Load response 1
LTV1
—
25
—
mV
IOUT = 1 mA to 30 mA
Load response 2
LTV2
—
25
—
mV
IOUT = 30 mA to 1 mA
Dropout voltage 1
VSAT1
—
80
150
mV
Dropout voltage 2
VSAT2
—
250
450
mV
Line regulation
VDL1
—
1
20
mV
Load regulation 1
VDLO1
—
6
30
mV
IOUT = 1 mA to 100 mA
Load regulation 2
VDLO2
—
9
90
mV
IOUT = 1 mA to 150 mA
Overcurrent protection
limit current
ILMAX
—
250
—
mA
VO = VOUT 0.98
ISHORT
—
50
—
mA
VO = 0 V
RSTB
275
550
1100
kΩ
Ripple rejection ratio
Short current
STBY pull-down resistance
STBY control voltage
ON
VSTBH
1.5
—
VIN
V
OFF
VSTBL
−0.3
—
0.3
V
VIN = 0.98 VOUT,
IOUT = 30 mA
VIN = 0.98 VOUT,
IOUT = 100 mA
VIN = VOUT + 0.5 V to 5.5 V,
IOUT = 50 mA
* This IC is not designed to be radiation-resistant.
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2/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
4.0
4.0
3.5
3.5
3.5
Out put Voltage VOUT[V]
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
0.5
1
2
3
4
Input Voltage VIN[V]
5
0
1
2
3
4
Input Volt age VIN[V]
2.0
1.5
1.0
0
5
Fig.2 Output Voltage vs Input Voltage
(BH30NB1WHFV)
80
70
70
70
50
40
30
20
60
50
40
30
20
10
10
0
0
0
1
2
3
4
Input Voltage VIN[V]
GND Current IGND[mA]
80
60
Fig.4 GND Current vs Input Voltage
(BH25NB1WHFV)
50
40
30
20
0
1
2
3
4
Input Voltage VI N[V]
5
0
Fig.5 GND Current vs Input Voltage
(BH30NB1WHFV)
3.0
3.0
Output Voltage VOUT[V]
1.5
1.0
0.5
Output Voltage VOUT[V]
3.0
Output Voltage VOUT[V]
3.5
2.5
2.0
1.5
1.0
50
100 150 200 250
O ut put Current IOUT[mA]
300
Fig.7 Output Voltage vs Output Current
(BH25NB1WHFV)
1.5
1.0
0.5
0.0
0
50
100 150 200 250
Output Current IO UT [mA]
0
300
Fig.8 Output Voltage vs Output Current
(BH30NB1WHFV)
0.5
0. 4
0.4
0.4
VSAT[V]
0.5
Dropout Voltage
0. 2
0. 1
0. 0
50
100
Output Current I OUT[mA]
150
Fig.10 Dropout voltage vs Output Current
(BH25NB1WHFV)
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© 2011 ROHM Co., Ltd. All rights reserved.
300
0.3
0.3
0.2
0.2
0.1
0.1
0.0
0.0
0
50
100 150 200 250
Output Current IO UT [mA]
Fig.9 Output Voltage vs Output Current
(BH33NB1WHFV)
0. 5
0. 3
5
2.0
0.0
0
2
3
4
Input Voltage VIN[V]
2.5
0.5
0.0
1
Fig.6 GND Current vs Input Voltage
(BH33NB1WHFV)
3.5
2.0
5
60
3.5
2.5
2
3
4
Input Voltage VIN[V]
10
0
5
1
Fig.3 Output Voltage vs Input Voltage
(BH33NB1WHFV)
80
GND Current IGND[mA]
GND Current IGND[mA]
Fig.1 Output Voltage vs Input Voltage
(BH25NB1WHFV)
2.5
0.0
0.0
0
3.0
0.5
0.5
0.0
Dropout Voltage VSAT[V]
O ut put Volt age VO UT[V]
4.0
Dropout Voltage VSAT[V]
Output Voltage VOUT[V]
●Reference data
0
50
100
Output Current IOUT[mA]
150
0
50
100
O ut put Current IOUT[mA]
150
Fig.11 Dropout voltage vs Output Current Fig.12 Dropout voltage vs Output Current
(BH33NB1WHFV)
(BH30NB1WHFV)
3/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
3.40
2.55
2.50
2.45
Output Voltage VOUT[V]
3.10
Output Voltage VOUT[V]
Output Voltage VOUT[V]
2.60
3.05
3.00
2.95
IOUT=1mA
2.40
-25
0
25
50
Temp[℃]
75
3.25
IOUT=1mA
3.20
-50
100
Fig.13 Output Voltage vs Temperature
(BH25NB1WHFV)
-25
0
25
50
Temp[℃]
75
-50
100
Fig.14 Output Voltage vs Temperature
(BH30NB1WHFV)
90
80
80
60
50
40
30
Co=2.2μF
Io=10mA
20
10
100
1k
Ripple Rejection R.R.[dB]
90
80
70
70
60
50
40
30
Co=2.2μF
Io=10mA
20
10 k
100
Frequency f[Hz]
1M
10
100
1k
100
1M
50 mV / div
75
100
50
40
30
Co=2.2μF
Io=10mA
10
100
1k
10 k
100
Frequency f[Hz]
1M
Fig.18 Ripple Rejection
(BH33NB1WHFV)
IOUT = 1 mA → 30 mA
IOUT = 1 mA → 30 mA
VOUT
25
50
Temp[℃]
60
20
Fig.17 Ripple Rejection
(BH30NB1WHFV)
IOUT = 1 mA → 30 mA
50 mV / div
0
70
Frequency f[Hz]
Fig.16 Ripple Rejection
(BH25NB1WHFV)
VOUT
10 k
-25
Fig.15 Output Voltage vs Temperature
(BH33NB1WHFV)
90
Ripple Rejection R.R.[dB]
Ripple Rejection R.R.[dB]
3.30
IOUT=1mA
2.90
-50
3.35
VOUT
50 mV / div
100 µs / div
100 µs / div
100 µs / div
Fig.19 Load Response
(Co = 2.2 µF)
(BH25NB1WHFV)
Fig.20 Load Response
(Co = 2.2 µF)
(BH30NB1WHFV)
1 V / div
STBY
1 V / div
STBY
1 V / div
Co = 1 µF
Co = 10 µF
Co = 10 µF
VOUT
Co = 2.2 µF
VOUT
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© 2011 ROHM Co., Ltd. All rights reserved.
100 µs / div
Fig.23 Output Voltage Rise Time
(BH30NB1WHFV)
4/8
1 V / div
Co = 1 µF
VOUT
Co = 2.2 µF
100 µs / div
Fig.22 Output Voltage Rise Time
(BH25NB1WHFV)
1 V / div
STBY
1 V / div
Co = 1 µF
Fig.21 Load Response
(Co = 2.2 µF)
(BH33NB1WHFV)
Co = 10 µF
Co = 2.2 µF
100 µs / div
Fig.24 Output Voltage Rise Time
(BH33NB1WHFV)
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Block diagram, recommended circuit diagram, and pin assignment diagram
BH□□NB1WHFV
VIN
VIN
3
VOLTAGE
REFERENCE
Cin
4
STBY
1
STBY
2
3
4
5
GND
VIN
VOUT
N.C.
VOUT
VOUT
Co
OVER CURRENT
PROTECTION
VSTB
Symbol
THERMAL
PROTECTION
2
GND
Pin
No.
N.C.
CONTROL
BLOCK
1
5
Function
Output voltage on/off control
(High: ON, Low: OFF)
Ground
Power supply input
Voltage output
NO CONNECT
Cin 0.1µF
Co 2.2µF
Fig.25
●Power dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption,
and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is
exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current
capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is
not exceeded during IC operation.
Calculating the maximum internal IC power consumption (PMAX)
PMAX = (VIN − VOUT) IOUT (MAX.)
VIN : Input voltage
VOUT : Output voltage
IOUT (MAX): Max. output current
2. Power dissipation/power dissipation reduction (Pd)
HVSOF5
0.6
Board: 70 mm 70 mm 1.6 mm
Material: Glass epoxy PCB
0.4
Pd[W]
410 mW
0.2
0
0
Fig. 26
25
50
75
100
125
Ta[℃]
HVSOF5 Power Dissipation/Power Dissipation Reduction (Example)
*Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd.
●Input Output capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages.
Typical ceramic capacitor characteristics
100
120
50 V
tolerance
95
80
Capacitanc e rate of change [%]
100
Capac itance rate of change [% ]
Capacitance rate of change [%]
100
120
50 V tolerance
90
60
85
10 V
tolerance
40
16 V tolerance
20
10 V
tolerance
80
16 V tolerance
75
0
70
0
1
2
DC bias Vdc[V]
3
4
Fig.27 Capacitance vs Bias
(Y5V)
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© 2011 ROHM Co., Ltd. All rights reserved.
X7R
X5R
80
Y5V
60
40
20
0
0
1
2
DC bias Vdc[V]
3
Fig.28 Capacitance vs Bias
(X5R, X7R)
5/8
4
- 25
0
25
Temp[℃]
50
75
Fig.29 Capacitance vs Temperature
(X5R, X7R, Y5V)
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Output capacitors
Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its
value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking
capacitor makers.
BH□□NB1WHFV
100
COUT = 2.2 µF
Ta = +25°C
ESR[ ]
10
1
Stable region
0.1
0.01
0
50
100
150
Output Current IOUT [mA]
Fig.30 Stable Operation Region (Example)
●Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit.
If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices,
such as fuses.
2.
Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
3.
Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4.
Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do
not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5.
Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics
to temperatures.
6.
Action in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
7.
Ground wiring pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
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6/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
8.
GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
9.
Back Current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
STBY
OUT
GND
Fig. 31 Example Bypass Diode Connection
10. Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting
it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an
antistatic measure. Use similar precaution when transporting or storing the IC.
11. Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Transistor (NPN)
Resistor
Pin A
Pin B
C
Pin B
B
E
Pin A
N
N
N
P
+
P
P
+
N
Parasitic
element
P+
P substrate
Parasitic element
GND
B
N
P
P
C
+
N
E
Parasitic
element
P substrate
Parasitic element
GND
GND
GND
Other adjacent elements
Fig.32 Example of IC structure
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© 2011 ROHM Co., Ltd. All rights reserved.
7/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Ordering part number
B
H
2
Part No.
5
N
Output voltage
25:2.5 V
28:2.8 V
2J:2.85 V
29:2.9 V
30:3.0 V
31:3.1 V
33:3.3 V
B
1
W
Series
NB1 : High ripple
rejection
H
Shutdown
switch
W : Includes
switch
F
V
-
Package
HFV : HVSOF5
T
R
Packaging and forming specification
TR: Embossed tape and reel
HVSOF5
Embossed carrier tape
(0.3)
Quantity
3000pcs
4
(0.91)
4
5
(0.41)
5
0.2MAX
Tape
1.0±0.05
(0.05)
(0.8)
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
3 2 1
1 2 3
1pin
0.13±0.05
S
+0.03
0.02 –0.02
1.6±0.05
0.6MAX
1.2±0.05
(MAX 1.28 include BURR)
1.6±0.05
0.1
S
0.5
0.22±0.05
0.08
Direction of feed
M
Reel
(Unit : mm)
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© 2011 ROHM Co., Ltd. All rights reserved.
8/8
∗ Order quantity needs to be multiple of the minimum quantity.
2011.01 - Rev.B
Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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